JPS55130169A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS55130169A JPS55130169A JP3687279A JP3687279A JPS55130169A JP S55130169 A JPS55130169 A JP S55130169A JP 3687279 A JP3687279 A JP 3687279A JP 3687279 A JP3687279 A JP 3687279A JP S55130169 A JPS55130169 A JP S55130169A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- gate
- layer
- insulating film
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To enhance the withstand voltage of a semiconductor device by oxidizing a polysilicon layer to form a gate insulating film to alleviate electic field concentration in the vicinity of a drain. CONSTITUTION:A first gate layer 14 off-set from the drain side on a gate insulating film 12 is formed thereon, and a polysilicon layer is then coated on the portion in the vicinity of the drain of the gate insulating film 12 and on the gate layer 14. The polysilicon layer is then oxidized to form an interlayer insulating and gate insulating film 20. A second gate layer 22 is then formed on the portion in the vicinity of a drain at least from the film 20. The layer 22 is then patterned, and source and drain diffusing openings are formed at the films 20 and 12, respectively, suitable doner impurity is selectively diffused through the openings in the substrate 10 to form by self-matching an N<+>-type source region 24 and an N<+>-type drain region 26 at the gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3687279A JPS55130169A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3687279A JPS55130169A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55130169A true JPS55130169A (en) | 1980-10-08 |
Family
ID=12481867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3687279A Pending JPS55130169A (en) | 1979-03-30 | 1979-03-30 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55130169A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6888191B2 (en) | 2000-11-27 | 2005-05-03 | Sharp Kabushiki Kaisha | Semiconductor device and fabrication process therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509385A (en) * | 1973-05-22 | 1975-01-30 | ||
| JPS535580A (en) * | 1976-07-02 | 1978-01-19 | Mitsubishi Electric Corp | Field effect type semiconductor device |
-
1979
- 1979-03-30 JP JP3687279A patent/JPS55130169A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509385A (en) * | 1973-05-22 | 1975-01-30 | ||
| JPS535580A (en) * | 1976-07-02 | 1978-01-19 | Mitsubishi Electric Corp | Field effect type semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6888191B2 (en) | 2000-11-27 | 2005-05-03 | Sharp Kabushiki Kaisha | Semiconductor device and fabrication process therefor |
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