GB1360770A - N-channel mos transistor - Google Patents
N-channel mos transistorInfo
- Publication number
- GB1360770A GB1360770A GB2373173A GB2373173A GB1360770A GB 1360770 A GB1360770 A GB 1360770A GB 2373173 A GB2373173 A GB 2373173A GB 2373173 A GB2373173 A GB 2373173A GB 1360770 A GB1360770 A GB 1360770A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- gate
- type
- mos transistor
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1360770 Semi-conductor devices WESTINGHOUSE ELECTRIC CORP 18 May 1973 [30 May 1972] 23731/73 Heading H1K An n-channel, enhancement-mode IGFET has a P-type Si gate 20 and a two-layer gate insulation 16, 18. The high positive gate-tosubstrate work function thus achieved and the storage of a net negative charge at the gateinsulation interface which is rendered possible together permit the use of a high resistivity (#10<SP>À5</SP> atoms/cc.) P-type Si substrate 10. The lower gate layer 16 preferably consists of silicon dioxide while the upper layer 18 may be of silicon nitride or aluminium oxide. Metal contacts 30 are applied through windows etched in an oxide layer 26 formed during the drive-in stage for forming the diffused sources and drain regions.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25758572A | 1972-05-30 | 1972-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1360770A true GB1360770A (en) | 1974-07-24 |
Family
ID=22976889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2373173A Expired GB1360770A (en) | 1972-05-30 | 1973-05-18 | N-channel mos transistor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4957777A (en) |
| DE (1) | DE2326410A1 (en) |
| FR (1) | FR2186737B1 (en) |
| GB (1) | GB1360770A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1540450A (en) * | 1975-10-29 | 1979-02-14 | Intel Corp | Self-aligning double polycrystalline silicon etching process |
| US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
| JP4662507B1 (en) * | 2009-11-05 | 2011-03-30 | 株式会社椿本チエイン | Meshing chain |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA713663B (en) * | 1970-07-06 | 1972-01-26 | Itt | N-channel enhancement mode silicon gate transistor |
| FR2103427A1 (en) * | 1970-08-21 | 1972-04-14 | Motorola Inc |
-
1973
- 1973-05-18 GB GB2373173A patent/GB1360770A/en not_active Expired
- 1973-05-24 DE DE19732326410 patent/DE2326410A1/en active Pending
- 1973-05-30 FR FR7319890A patent/FR2186737B1/fr not_active Expired
- 1973-05-30 JP JP5988573A patent/JPS4957777A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2326410A1 (en) | 1973-12-13 |
| JPS4957777A (en) | 1974-06-05 |
| FR2186737B1 (en) | 1978-02-10 |
| FR2186737A1 (en) | 1974-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |