GB1208077A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1208077A GB1208077A GB1749468A GB1749468A GB1208077A GB 1208077 A GB1208077 A GB 1208077A GB 1749468 A GB1749468 A GB 1749468A GB 1749468 A GB1749468 A GB 1749468A GB 1208077 A GB1208077 A GB 1208077A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- oxide
- semi
- silicon
- top layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,208,077. Semi-conductor devices. SPERRY RAND CORP. 11 April, 1968 [19 May, 1967], No. 17494/68. Heading H1K. An insulating layer 2 on the surface of a semi-conductor device comprises a bottom layer 6 of silicon oxide at least 100Š thick and a top layer 5 of silicon nitride or silicon oxynitride, the total thickness of the layer 2 being no greater than 1500Š. The embodiment shown comprises an MIS capacitor formed on an N-type Si body 3. The oxide layer 6 is formed by oxidation in pure O 2 or in argon containing 1% N 2 O. The top layer 5 may be deposited as disclosed in Specifications 1,125,650 or 1,130,138. The invention may also be applied to an IGFET, in which the combined oxide nitride layer is used firstly as a diffusion mask to define source and drain regions, and then as gate insulation and junction edge passivation. Reference has been directed by the Comptroller to Specification 1,165,009.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63980867A | 1967-05-19 | 1967-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1208077A true GB1208077A (en) | 1970-10-07 |
Family
ID=24565630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1749468A Expired GB1208077A (en) | 1967-05-19 | 1968-04-11 | Semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE1769396A1 (en) |
| FR (1) | FR1565865A (en) |
| GB (1) | GB1208077A (en) |
| NL (1) | NL158656B (en) |
| SE (1) | SE350651B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0031107A1 (en) * | 1979-12-15 | 1981-07-01 | Kabushiki Kaisha Toshiba | Process for fabricating a bipolar integrated circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE337430B (en) * | 1969-11-17 | 1971-08-09 | Inst Halvledarforskning Ab |
-
1968
- 1968-04-11 GB GB1749468A patent/GB1208077A/en not_active Expired
- 1968-05-15 FR FR1565865D patent/FR1565865A/fr not_active Expired
- 1968-05-17 NL NL6807032A patent/NL158656B/en not_active IP Right Cessation
- 1968-05-17 DE DE19681769396 patent/DE1769396A1/en not_active Withdrawn
- 1968-05-20 SE SE679168A patent/SE350651B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0031107A1 (en) * | 1979-12-15 | 1981-07-01 | Kabushiki Kaisha Toshiba | Process for fabricating a bipolar integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6807032A (en) | 1968-11-20 |
| DE1769396A1 (en) | 1971-09-23 |
| NL158656B (en) | 1978-11-15 |
| FR1565865A (en) | 1969-05-02 |
| SE350651B (en) | 1972-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |