GB1297899A - - Google Patents

Info

Publication number
GB1297899A
GB1297899A GB1297899DA GB1297899A GB 1297899 A GB1297899 A GB 1297899A GB 1297899D A GB1297899D A GB 1297899DA GB 1297899 A GB1297899 A GB 1297899A
Authority
GB
United Kingdom
Prior art keywords
semi
particles
insulating layer
non
trapping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US7746470A priority Critical
Application filed filed Critical
Publication of GB1297899A publication Critical patent/GB1297899A/en
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Abstract

1297899 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 28 May 1971 [2 Oct 1970] 17806/71 Heading H1K The device shown is a variable-threshold IGFET making use of trapping of non-interacting particles 3 in the gate insulation; charge reaches these traps by tunnelling from the semiconductor body 1 through the inner insulating layer 2. In a variant the diffused source and drain regions 8 and their associated ohmic contacts 9 are replaced by Schottky barrier contacts. In other variants the source and drain are not provided and the devices function as voltage-variable capacitors with high hysteresis. Suitable semi-conductors include silicon, germanium, and gallium arsenide. The insulators include aluminium oxide, magnesium oxide, oxides, nitrides, tellurides, chlorides, selenides and fluorides of semi-conductor elements, and phosphosilicate glass; and ceramic or organic materials may be used for the outer insulating layer 5. The trapping particles may be particles of metals or semi-conductors or may be, particularly if a homogeneous insulation 2, 9 is employed, non-interacting groups of implanted ions.
GB1297899D 1970-10-02 1971-05-28 Expired GB1297899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US7746470A true 1970-10-02 1970-10-02

Publications (1)

Publication Number Publication Date
GB1297899A true GB1297899A (en) 1972-11-29

Family

ID=22138205

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1297899D Expired GB1297899A (en) 1970-10-02 1971-05-28

Country Status (4)

Country Link
JP (1) JPS521839B1 (en)
DE (1) DE2149303A1 (en)
FR (1) FR2112241B1 (en)
GB (1) GB1297899A (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
EP0914658A1 (en) * 1996-07-23 1999-05-12 Saifun Semiconductors Ltd Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
EP0971416A1 (en) * 1998-01-26 2000-01-12 Sony Corporation Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
US6040605A (en) * 1998-01-28 2000-03-21 Hitachi, Ltd. Semiconductor memory device
US6104056A (en) * 1993-08-19 2000-08-15 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US6429063B1 (en) 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
US6477084B2 (en) 1998-05-20 2002-11-05 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6490204B2 (en) 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6552387B1 (en) 1997-07-30 2003-04-22 Saifun Semiconductors Ltd. Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6583007B1 (en) 2001-12-20 2003-06-24 Saifun Semiconductors Ltd. Reducing secondary injection effects
US6649972B2 (en) 1997-08-01 2003-11-18 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6664588B2 (en) 1998-05-20 2003-12-16 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US6828625B2 (en) 2001-11-19 2004-12-07 Saifun Semiconductors Ltd. Protective layer in memory device and method therefor
US6829172B2 (en) 2000-05-04 2004-12-07 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7675782B2 (en) 2002-10-29 2010-03-09 Saifun Semiconductors Ltd. Method, system and circuit for programming a non-volatile memory array
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7738304B2 (en) 2002-07-10 2010-06-15 Saifun Semiconductors Ltd. Multiple use memory chip
US7743230B2 (en) 2003-01-31 2010-06-22 Saifun Semiconductors Ltd. Memory array programming circuit and a method for using the circuit
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
USRE41868E1 (en) 1998-01-28 2010-10-26 Hitachi, Ltd. Semiconductor memory device
US7964459B2 (en) 2004-10-14 2011-06-21 Spansion Israel Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2772989B1 (en) * 1997-12-19 2003-06-06 Commissariat Energie Atomique Multilevel memory device has locking coulomb, manufacturing process and reading METHOD / write / erasure of such a device

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291852B1 (en) 1993-08-19 2001-09-18 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US7309892B2 (en) 1993-08-19 2007-12-18 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US7061053B2 (en) 1993-08-19 2006-06-13 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US6674117B2 (en) 1993-08-19 2004-01-06 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US6787841B2 (en) 1993-08-19 2004-09-07 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US6104056A (en) * 1993-08-19 2000-08-15 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US6555882B2 (en) 1993-08-19 2003-04-29 Hitachi, Ltd. Semiconductor element and semiconductor memory device using the same
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
EP0914658A4 (en) * 1996-07-23 2000-03-22 Saifun Semiconductors Ltd Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
EP0914658A1 (en) * 1996-07-23 1999-05-12 Saifun Semiconductors Ltd Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6803299B2 (en) 1997-07-30 2004-10-12 Saifun Semiconductors Ltd. Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6552387B1 (en) 1997-07-30 2003-04-22 Saifun Semiconductors Ltd. Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6566699B2 (en) 1997-07-30 2003-05-20 Saifun Semiconductors Ltd. Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6649972B2 (en) 1997-08-01 2003-11-18 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
EP0971416A1 (en) * 1998-01-26 2000-01-12 Sony Corporation Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
US6194759B1 (en) 1998-01-28 2001-02-27 Hitachi, Ltd. Semiconductor memory device
US6040605A (en) * 1998-01-28 2000-03-21 Hitachi, Ltd. Semiconductor memory device
USRE41868E1 (en) 1998-01-28 2010-10-26 Hitachi, Ltd. Semiconductor memory device
US6477084B2 (en) 1998-05-20 2002-11-05 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6664588B2 (en) 1998-05-20 2003-12-16 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6429063B1 (en) 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
US6490204B2 (en) 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6829172B2 (en) 2000-05-04 2004-12-07 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6828625B2 (en) 2001-11-19 2004-12-07 Saifun Semiconductors Ltd. Protective layer in memory device and method therefor
US7098107B2 (en) 2001-11-19 2006-08-29 Saifun Semiconductor Ltd. Protective layer in memory device and method therefor
US6583007B1 (en) 2001-12-20 2003-06-24 Saifun Semiconductors Ltd. Reducing secondary injection effects
US7738304B2 (en) 2002-07-10 2010-06-15 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US7675782B2 (en) 2002-10-29 2010-03-09 Saifun Semiconductors Ltd. Method, system and circuit for programming a non-volatile memory array
US7743230B2 (en) 2003-01-31 2010-06-22 Saifun Semiconductors Ltd. Memory array programming circuit and a method for using the circuit
US7964459B2 (en) 2004-10-14 2011-06-21 Spansion Israel Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell

Also Published As

Publication number Publication date
DE2149303A1 (en) 1972-04-06
FR2112241B1 (en) 1974-03-29
FR2112241A1 (en) 1972-06-16
JPS521839B1 (en) 1977-01-18

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee