FR2186737B1 - - Google Patents
Info
- Publication number
- FR2186737B1 FR2186737B1 FR7319890A FR7319890A FR2186737B1 FR 2186737 B1 FR2186737 B1 FR 2186737B1 FR 7319890 A FR7319890 A FR 7319890A FR 7319890 A FR7319890 A FR 7319890A FR 2186737 B1 FR2186737 B1 FR 2186737B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25758572A | 1972-05-30 | 1972-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2186737A1 FR2186737A1 (en) | 1974-01-11 |
FR2186737B1 true FR2186737B1 (en) | 1978-02-10 |
Family
ID=22976889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7319890A Expired FR2186737B1 (en) | 1972-05-30 | 1973-05-30 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS4957777A (en) |
DE (1) | DE2326410A1 (en) |
FR (1) | FR2186737B1 (en) |
GB (1) | GB1360770A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1540450A (en) * | 1975-10-29 | 1979-02-14 | Intel Corp | Self-aligning double polycrystalline silicon etching process |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
JP4662507B1 (en) * | 2009-11-05 | 2011-03-30 | 株式会社椿本チエイン | Meshing chain |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ZA713663B (en) * | 1970-07-06 | 1972-01-26 | Itt | N-channel enhancement mode silicon gate transistor |
FR2103427A1 (en) * | 1970-08-21 | 1972-04-14 | Motorola Inc |
-
1973
- 1973-05-18 GB GB2373173A patent/GB1360770A/en not_active Expired
- 1973-05-24 DE DE19732326410 patent/DE2326410A1/en active Pending
- 1973-05-30 JP JP5988573A patent/JPS4957777A/ja active Pending
- 1973-05-30 FR FR7319890A patent/FR2186737B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS4957777A (en) | 1974-06-05 |
GB1360770A (en) | 1974-07-24 |
FR2186737A1 (en) | 1974-01-11 |
DE2326410A1 (en) | 1973-12-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |