JPS5457880A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5457880A
JPS5457880A JP12427177A JP12427177A JPS5457880A JP S5457880 A JPS5457880 A JP S5457880A JP 12427177 A JP12427177 A JP 12427177A JP 12427177 A JP12427177 A JP 12427177A JP S5457880 A JPS5457880 A JP S5457880A
Authority
JP
Japan
Prior art keywords
layer
metal layer
film
oxidized film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12427177A
Other languages
Japanese (ja)
Inventor
Matsuo Ichinose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12427177A priority Critical patent/JPS5457880A/en
Publication of JPS5457880A publication Critical patent/JPS5457880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To make fine work possible, by making a two-layer composed of an Al metal layer and another layer on it as to a semiconductor integrated circuit of a MOS field effect transistor. CONSTITUTION:In N-type silicon substrate 1, source and drain 2 is formed, on which field-oxidized film 3 and gate oxidized film 4 are formed, and a contact hole is made. On it, Al metal layer 5 and metal layer 6 of any substance except Al are continuously formed, and a wiring is formed by photoetching. Layer 7 is a CVDSiO2 film.
JP12427177A 1977-10-17 1977-10-17 Semiconductor device Pending JPS5457880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12427177A JPS5457880A (en) 1977-10-17 1977-10-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12427177A JPS5457880A (en) 1977-10-17 1977-10-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5457880A true JPS5457880A (en) 1979-05-10

Family

ID=14881195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12427177A Pending JPS5457880A (en) 1977-10-17 1977-10-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457880A (en)

Similar Documents

Publication Publication Date Title
GB1357515A (en) Method for manufacturing an mos integrated circuit
JPS5688354A (en) Semiconductor integrated circuit device
JPS5643749A (en) Semiconductor device and its manufacture
JPS5736842A (en) Semiconductor integrated circuit device
KR900003963A (en) Semiconductor device
JPS5717164A (en) Manufacture of complementary mos semiconductor device
JPS5457880A (en) Semiconductor device
JPS5768075A (en) Manufacture of integrated circuit device
JPS5457881A (en) Semiconductor device
EP0002107A3 (en) Method of making a planar semiconductor device
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS5530867A (en) Method of making semiconductor device
JPS52130580A (en) High densityintegrated circuit device
JPS5688366A (en) Semiconductor device
JPS5448182A (en) Semiconductor integrated circuit device
JPS55105362A (en) Semiconductor integrated circuit device
JPS5457873A (en) Semiconductor device
JPS5339087A (en) Integrated circuit
JPS5783064A (en) Manufacture of semiconductor device
JPS5455180A (en) Semiconductor circuit device
JPS55157265A (en) Manufacturing mthod for mos field-effect transistor
JPS56129375A (en) Mos integrate circuit
JPS6473673A (en) Mos transistor
JPS5599778A (en) Insulated-gate type field effect transistor
JPS5245885A (en) Semiconductor integrated circuit device and process for production of same