JPS5275278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5275278A
JPS5275278A JP15251075A JP15251075A JPS5275278A JP S5275278 A JPS5275278 A JP S5275278A JP 15251075 A JP15251075 A JP 15251075A JP 15251075 A JP15251075 A JP 15251075A JP S5275278 A JPS5275278 A JP S5275278A
Authority
JP
Japan
Prior art keywords
semiconductor device
conductivity type
layer
resistance layer
pnpn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15251075A
Other languages
Japanese (ja)
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP15251075A priority Critical patent/JPS5275278A/en
Publication of JPS5275278A publication Critical patent/JPS5275278A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To let a thyristor of a PNPN 4-layer structure to turn off at a high speed by providing a strip-form low resistance layer on the opposite conductivity type layer side of a high resistance layer of a-conductivity type.
JP15251075A 1975-12-19 1975-12-19 Semiconductor device Pending JPS5275278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15251075A JPS5275278A (en) 1975-12-19 1975-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15251075A JPS5275278A (en) 1975-12-19 1975-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5275278A true JPS5275278A (en) 1977-06-24

Family

ID=15542019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15251075A Pending JPS5275278A (en) 1975-12-19 1975-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5275278A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5476080A (en) * 1977-11-30 1979-06-18 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS6414963A (en) * 1987-07-08 1989-01-19 Nec Corp Pnpn semiconductor element
JPH0215671A (en) * 1988-07-04 1990-01-19 Hitachi Ltd Semiconductor device and semiconductor wafer
CN112382654A (en) * 2020-04-13 2021-02-19 浙江明德微电子股份有限公司 Semiconductor discrete device for overvoltage short-circuit protection

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5476080A (en) * 1977-11-30 1979-06-18 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS5758789B2 (en) * 1977-11-30 1982-12-11 Meidensha Kk
JPS6414963A (en) * 1987-07-08 1989-01-19 Nec Corp Pnpn semiconductor element
JPH0215671A (en) * 1988-07-04 1990-01-19 Hitachi Ltd Semiconductor device and semiconductor wafer
CN112382654A (en) * 2020-04-13 2021-02-19 浙江明德微电子股份有限公司 Semiconductor discrete device for overvoltage short-circuit protection
CN112382654B (en) * 2020-04-13 2024-02-09 浙江明德微电子股份有限公司 Semiconductor discrete device for overvoltage short-circuit protection

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