JPS5275278A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5275278A JPS5275278A JP15251075A JP15251075A JPS5275278A JP S5275278 A JPS5275278 A JP S5275278A JP 15251075 A JP15251075 A JP 15251075A JP 15251075 A JP15251075 A JP 15251075A JP S5275278 A JPS5275278 A JP S5275278A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- conductivity type
- layer
- resistance layer
- pnpn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To let a thyristor of a PNPN 4-layer structure to turn off at a high speed by providing a strip-form low resistance layer on the opposite conductivity type layer side of a high resistance layer of a-conductivity type.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15251075A JPS5275278A (en) | 1975-12-19 | 1975-12-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15251075A JPS5275278A (en) | 1975-12-19 | 1975-12-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5275278A true JPS5275278A (en) | 1977-06-24 |
Family
ID=15542019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15251075A Pending JPS5275278A (en) | 1975-12-19 | 1975-12-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5275278A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5476080A (en) * | 1977-11-30 | 1979-06-18 | Meidensha Electric Mfg Co Ltd | Semiconductor device |
JPS6414963A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Pnpn semiconductor element |
JPH0215671A (en) * | 1988-07-04 | 1990-01-19 | Hitachi Ltd | Semiconductor device and semiconductor wafer |
CN112382654A (en) * | 2020-04-13 | 2021-02-19 | 浙江明德微电子股份有限公司 | Semiconductor discrete device for overvoltage short-circuit protection |
-
1975
- 1975-12-19 JP JP15251075A patent/JPS5275278A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5476080A (en) * | 1977-11-30 | 1979-06-18 | Meidensha Electric Mfg Co Ltd | Semiconductor device |
JPS5758789B2 (en) * | 1977-11-30 | 1982-12-11 | Meidensha Kk | |
JPS6414963A (en) * | 1987-07-08 | 1989-01-19 | Nec Corp | Pnpn semiconductor element |
JPH0215671A (en) * | 1988-07-04 | 1990-01-19 | Hitachi Ltd | Semiconductor device and semiconductor wafer |
CN112382654A (en) * | 2020-04-13 | 2021-02-19 | 浙江明德微电子股份有限公司 | Semiconductor discrete device for overvoltage short-circuit protection |
CN112382654B (en) * | 2020-04-13 | 2024-02-09 | 浙江明德微电子股份有限公司 | Semiconductor discrete device for overvoltage short-circuit protection |
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