JPS5792881A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS5792881A
JPS5792881A JP16981480A JP16981480A JPS5792881A JP S5792881 A JPS5792881 A JP S5792881A JP 16981480 A JP16981480 A JP 16981480A JP 16981480 A JP16981480 A JP 16981480A JP S5792881 A JPS5792881 A JP S5792881A
Authority
JP
Japan
Prior art keywords
stem
lead
reflected
led
reflecting film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16981480A
Other languages
Japanese (ja)
Inventor
Atsuyuki Kobayashi
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16981480A priority Critical patent/JPS5792881A/en
Publication of JPS5792881A publication Critical patent/JPS5792881A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve luminosity and reliability by a method wherein a flip-chip type LED is fixed to a stem and a reflecting film is provided to the surface of the element which faces to the surface fixed to the stem, so that the emitting portion of the LED is made linear. CONSTITUTION:A stem 52 is provided to a GaP red flip-chip type LED51 and a + lead 521 and a - lead 522 are introduced out of electrodes 53 and 54 respectively. A reflecting surface 55 which is laid across the lead 521 and 522 is provided to the stem 52. To prevent a light component emitted from the backside 56 of the element from being null, a reflecting film 58 is provided. The light component, irrespective of not being reflected or being reflected several times in advance, is reflected frontward by this reflecting film 58 and becomes an effective component. As the emitting portion of the LED composed in such a manner as mentioned above becomes linear including the reflecting surface 55, so that it can be utilized as a linear indication element effectively.
JP16981480A 1980-12-02 1980-12-02 Semiconductor light emitting element Pending JPS5792881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16981480A JPS5792881A (en) 1980-12-02 1980-12-02 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16981480A JPS5792881A (en) 1980-12-02 1980-12-02 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS5792881A true JPS5792881A (en) 1982-06-09

Family

ID=15893388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16981480A Pending JPS5792881A (en) 1980-12-02 1980-12-02 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5792881A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007141763A1 (en) * 2006-06-09 2007-12-13 Koninklijke Philips Electronics N.V. Low profile side emitting led
WO2008131736A1 (en) * 2007-04-26 2008-11-06 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing a plurality of optoelectronic components
EP1381091A3 (en) * 2002-07-12 2008-12-03 Stanley Electric Co., Ltd. Light emitting diode
WO2009022315A2 (en) * 2007-08-16 2009-02-19 Koninklijke Philips Electronics N.V. Backlight including side-emitting semiconductor light emitting devices
US8080828B2 (en) 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
EP2953176A1 (en) 2014-06-02 2015-12-09 Swarovski Energy GmbH Lighting device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1381091A3 (en) * 2002-07-12 2008-12-03 Stanley Electric Co., Ltd. Light emitting diode
WO2007141763A1 (en) * 2006-06-09 2007-12-13 Koninklijke Philips Electronics N.V. Low profile side emitting led
JP2008004948A (en) * 2006-06-09 2008-01-10 Philips Lumileds Lightng Co Llc Low profile side emitting led
US8080828B2 (en) 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
WO2008131736A1 (en) * 2007-04-26 2008-11-06 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing a plurality of optoelectronic components
JP2010525586A (en) * 2007-04-26 2010-07-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic component and method for manufacturing optoelectronic component
US8476644B2 (en) 2007-04-26 2013-07-02 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the manufacture of a plurality of optoelectronic components
WO2009022315A2 (en) * 2007-08-16 2009-02-19 Koninklijke Philips Electronics N.V. Backlight including side-emitting semiconductor light emitting devices
WO2009022315A3 (en) * 2007-08-16 2009-04-09 Philips Lumileds Lighting Co Backlight including side-emitting semiconductor light emitting devices
EP2953176A1 (en) 2014-06-02 2015-12-09 Swarovski Energy GmbH Lighting device
KR20170012269A (en) 2014-06-02 2017-02-02 스바러플렉스 게엠베하 Illumination Device

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