JPS6012778A - Structure for element connection of semiconductor device and manufacture thereof - Google Patents
Structure for element connection of semiconductor device and manufacture thereofInfo
- Publication number
- JPS6012778A JPS6012778A JP58118201A JP11820183A JPS6012778A JP S6012778 A JPS6012778 A JP S6012778A JP 58118201 A JP58118201 A JP 58118201A JP 11820183 A JP11820183 A JP 11820183A JP S6012778 A JPS6012778 A JP S6012778A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- conductor lead
- conductor
- connection structure
- electrode pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000004020 conductor Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 15
- 238000005476 soldering Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体装置の素子接続構造およびその製造方法
に係シ、特に、半導体素子の表面およびその裏面に電極
パターンを設けた半導体部材を複数個横設し、尚該電極
パターンに導体リードを接続して力る半導体装置の素子
接続４’ｌ’を造およびその製造方法に関するものであ
る。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an element connection structure of a semiconductor device and a method of manufacturing the same, and particularly relates to a semiconductor device having a plurality of semiconductor members each having an electrode pattern on the front and back surfaces of the semiconductor element. The present invention relates to a method for manufacturing an element connection 4'l' of a semiconductor device which is installed horizontally and in which a conductor lead is connected to the electrode pattern.
この種の半導体装置の素子接続構造について太陽電池を
例にとって以下に説明する。The element connection structure of this type of semiconductor device will be explained below using a solar cell as an example.
第１図および第２図は、太陽電池の素子接続構造を示す
ものであシ、第１図が平面図、第２図がその断面図であ
る。1 and 2 show an element connection structure of a solar cell, with FIG. 1 being a plan view and FIG. 2 being a sectional view thereof.
これらの図において、符号１は太陽電池素子でアシ、こ
の人１９電池素子１の一方の表面である受光面とその裏
面とにそれぞれ電（よパターン２人および２Ｂを設けて
太陽電池部材３を構成している。In these figures, reference numeral 1 denotes a solar cell element, and the solar cell member 3 is constructed by providing patterns 2 and 2B on the light-receiving surface, which is one surface of the battery element 1, and its back surface, respectively. It consists of
該太陽電池部材３の複数個は、その受光面を同一方向に
向けて横設されている。当該太陽電池３の受光面の電極
パターン２人と、それに論設した太陽電池部材３の裏面
の電極パターン２Ｂとは、予めはんだめっき層４を設け
た導体リード５をもってはんだ付けされている。なお、
該太陽電池部材３は、直列接続されている。A plurality of solar cell members 3 are installed horizontally with their light-receiving surfaces facing in the same direction. The two electrode patterns on the light-receiving surface of the solar cell 3 and the electrode pattern 2B on the back surface of the solar cell member 3 arranged thereon are soldered with conductor leads 5 on which a solder plating layer 4 has been provided in advance. In addition,
The solar cell members 3 are connected in series.
このような素子接続構造４造は、次のようにして製造さ
れている。Such an element connection structure 4 is manufactured as follows.
予めはんだめっき層４等をほどこした導体リード５を、
図示の如く、階段上に成形させる。また、予めはんだめ
っき層や浸漬法による共晶の予備はんだ層等を太陽電池
部材３の表裏面の電極パターン２人および２Ｂにほどこ
す。ついで、太陽電池部材３の裏面の電極パターン２Ｂ
から隣接の太陽電池部材３の受光面の電極パターン２人
へと、導体リード５を配設し、各太陽電池部材３が直列
方向に接続されるようにする。しかして、水素（Ｎ２）
やチッ素（Ｎ２）、またはアルゴン（Ａｒ）ガス等の雰
囲気炉内に当該太陽電池を収容し、抵抗体加熱方式をも
って、該はんだを溶かして電極パターン２と導体リード
５とを接続させる。このため、はんだ溶融（１８３ｔ：
’以上）の時間が数秒から数十分かかつていた。A conductor lead 5 on which a solder plating layer 4 etc. has been applied in advance,
As shown in the figure, it is molded onto a staircase. Further, a solder plating layer or a preliminary eutectic solder layer formed by dipping is applied to the two electrode patterns and 2B on the front and back surfaces of the solar cell member 3 in advance. Next, the electrode pattern 2B on the back side of the solar cell member 3
A conductor lead 5 is disposed from the solar cell member 3 to the two electrode patterns on the light-receiving surface of the adjacent solar cell member 3, so that each solar cell member 3 is connected in series. However, hydrogen (N2)
The solar cell is housed in a furnace with an atmosphere of nitrogen (N2), argon (Ar) gas, etc., and the electrode pattern 2 and the conductor lead 5 are connected by melting the solder using a resistor heating method. For this reason, solder melting (183t:
' or more) The time ranged from a few seconds to several tens of minutes.
加えて、前述したように、？ｎｒ体リード５が隣接の太
陽電池部材３相互間にまたがる形状の単体の４う：体す
−ド５であるため、自動供給、自動組立方式を適用する
ことが、’１ｆｆｉ シ＜ 、大量生産性に乏しい状況
であった。しかも、この抵抗体加熱方式では、Ｎ２ 、
ＮｚまたはＡｔガス等の雰囲気炉が必要であシ、かつ大
型のコンベヤ炉であるため、ガスの消耗や電力などのエ
ネルギーの消耗が多いばがシでなく１前述の如く接続終
了までかなシの時間がかかるなど量産に不向きの欠点が
あった。In addition, as mentioned above,? Since it is a single 4-body board 5 in which the NR body lead 5 extends between adjacent solar cell members 3, it is possible to apply an automatic supply and automatic assembly method to facilitate mass production. It was a very sexual situation. Moreover, in this resistor heating method, N2,
It requires an atmosphere furnace using Nz or At gas, and since it is a large conveyor furnace, it does not consume a lot of energy such as gas and electricity. It had drawbacks such as being time consuming and unsuitable for mass production.
一方、前述の接続構造の他に第３図に示すような構造が
提案されそいる。すなわち、基板６上に設けた導体７に
合わせて太陽電池素子１に電極パターン２人および２Ｂ
を設けた部材３を配列し、該素子１の上面よシはんだめ
っきをほどこした銅箔の導体をフィルム８に貼シ合わせ
て導電パターン９としたフィルム導体リード１ｏを、太
陽電池部材３の電極パターン２人に合わせて配置する。On the other hand, in addition to the connection structure described above, a structure as shown in FIG. 3 is likely to be proposed. That is, electrode patterns 2 and 2B are formed on the solar cell element 1 in accordance with the conductor 7 provided on the substrate 6.
A conductor made of copper foil plated with solder is attached to a film 8 on the upper surface of the element 1 to form a conductive pattern 9, and a film conductor lead 1o is connected to the electrode of the solar cell member 3. Arrange the pattern to suit two people.
しかして、それらを加熱加圧にょシ太陽電池部材３およ
び基板６の基体導体７に貼シ合わせ、該太陽電池部材３
相互間はフィルム導体リードｌｏの可撓性によって双方
の導体７および９を接触せしめ、かつ、はんだが加熱に
よって溶けて導体７および９が接続するものである。Then, they are pasted together on the solar cell member 3 and the base conductor 7 of the substrate 6 under heat and pressure.
Both conductors 7 and 9 are brought into contact with each other by the flexibility of the film conductor lead lo, and the conductors 7 and 9 are connected by melting the solder by heating.
しかしながら、このような技術は、基板６の熱容量が大
きく、このため、はんだが溶けて凝固するま−でにかな
シの時間がかかる。However, in this technique, the heat capacity of the substrate 6 is large, and therefore it takes a long time for the solder to melt and solidify.
本発明は上記課題に鑑みなされたものであシ、その目的
は、省エネルギー化を図ると共に大量生産性を向上せし
め、かつ接続部分の信頼性を向上させた半導体装置の素
子接続構造およびその製造方法を提供するにある。The present invention has been made in view of the above-mentioned problems, and its objects are an element connection structure for a semiconductor device and a method for manufacturing the same, which saves energy, improves mass productivity, and improves reliability of connection parts. is to provide.
上記目的を達成するため、本発明は、導体リードを、半
導体素子上に設けた電極パターンに接続される部分を他
の部分よシ小面積となるように形成し、この導体リード
をもって電極パターン間に配設し、少なくとも当該部分
に光熱源を照射して接続をするものである。In order to achieve the above object, the present invention forms a conductor lead so that a portion connected to an electrode pattern provided on a semiconductor element has a smaller area than other portions, and uses the conductor lead between electrode patterns. The connection is made by irradiating at least that part with a light and heat source.
以下、本発明に係る実′ＩＩａ例を第４図乃至第７図に
基づいて説明する。なお、前記構成要素と同一のものに
は同一の符号を付して説明を省略する。Hereinafter, a practical example 'IIa' according to the present invention will be explained based on FIGS. 4 to 7. It should be noted that the same components as those described above are given the same reference numerals and explanations will be omitted.
第４図は本発明の基礎となった事項を説明するために示
す平面図であシ、また、第５図は光熱源の照射の状況を
説明するために示す断面図である。FIG. 4 is a plan view for explaining the basics of the present invention, and FIG. 5 is a cross-sectional view for explaining the irradiation situation of the light and heat source.
これらの図において、受光面および裏面の各電極パター
ン２と、これの上の導体リード５とを接続させるために
は、高エネルギー光熱源発生装置からの光熱源（例えば
、ＹＡＧレーザ光線）をヘッド部１１で符号１２の如く
絞り、導体リード５に照射させる。すると、当該レーザ
光によ多導体リード５および電極パターン２のはんだ層
を溶かして接続させている。しかして、第４図に示すよ
うに、光熱源がヘッド部１１で絞られた集光径１２は、
導体リード５の最大幅よシわずかに大きい方が、導電パ
ターン２の上に形成されたはんだと、導体リード５のは
んだとが同時に加熱されるので、はんだ付性の良好な接
続が可能でおる。しかしながら、そのように集光径１２
を設定すると、導電パターン２のない部分１３も加熱さ
れてしまい、太陽電池素子１に悪影響を与える可能性が
おる。In these figures, in order to connect each electrode pattern 2 on the light receiving surface and the back surface to the conductor lead 5 thereon, a light heat source (for example, a YAG laser beam) from a high energy light heat source generator is connected to the head. In the section 11, the light is apertured as indicated by reference numeral 12, and the conductor lead 5 is irradiated. Then, the laser beam melts the solder layer of the multi-conductor lead 5 and the electrode pattern 2 and connects them. Therefore, as shown in FIG.
If the width of the conductor lead 5 is slightly larger than the maximum width, the solder formed on the conductive pattern 2 and the solder of the conductor lead 5 are heated at the same time, so that a connection with good solderability is possible. . However, in such a case, the focusing diameter is 12
If set, the portion 13 without the conductive pattern 2 will also be heated, which may have an adverse effect on the solar cell element 1.
また、集光径１２を導体リード５の幅よりも小さくすれ
ば上記の問題は生じないが、当然、導電パターンｚ上の
はんだが溶融するまでに時間がかかり、はんだ付性も多
少劣る。Further, if the condensing diameter 12 is made smaller than the width of the conductor lead 5, the above problem will not occur, but it will naturally take time for the solder on the conductive pattern z to melt, and the solderability will be somewhat inferior.
第６図は本発明に係る素子接続構造およびその製造方法
の一実施例を示す図である。FIG. 6 is a diagram showing an embodiment of an element connection structure and a manufacturing method thereof according to the present invention.
導体リード５０は、太陽電池素子１の受光面側と裏面側
とに設けｆＣ−％’＋にノくターン２に接する部分、す
なわち、電極パターン２と同ピツチに切欠（スリット）
部５１設けて他の部分５２よシ小面積部分を形成する。The conductor leads 50 are provided on the light-receiving surface side and the back surface side of the solar cell element 1, and have notches (slits) at the portions that contact the turns 2 at fC-%'+, that is, at the same pitch as the electrode patterns 2.
A portion 51 is provided to form a portion having a smaller area than other portions 52.
また、前記導体リード５０を前記電極ツクターン２Ａお
よび２Ｂに当接する。ついで、光熱源の集光径１２を導
体リード５００幅と同じ幅にして照射する。このように
すれば、スリット部分５１では、導１本リード５０はも
ちろん導電ノくターン２も同時に加熱されることになる
。したがって、ス゛リットのない部分５２では太陽電池
素子１は加熱されることはないので、太陽電池素子本体
への加熱による悪影響が全くなく、はんだ付性も良好な
高信頼性の素子接続構造を得ることができる。Further, the conductor lead 50 is brought into contact with the electrode terminals 2A and 2B. Then, irradiation is performed by setting the condensing diameter 12 of the photothermal source to the same width as the width of the conductor lead 500. In this way, in the slit portion 51, not only the single conductive lead 50 but also the conductive turn 2 are heated at the same time. Therefore, since the solar cell element 1 is not heated in the portion 52 without a slit, it is possible to obtain a highly reliable element connection structure that has no adverse effects due to heating on the solar cell element body and has good solderability. I can do it.
第７図は本発明の他の実施例を示す平面図でらる。図に
おいて、導体リード５０は、電極ノ（ターン２に接続き
れる部分、すなわち該）くターン２と同ピツチに透孔５
３を設けてその部分を他の部分より小面積に構成される
。このように形成された導体リード５０をもって、上記
実施例と同様の工程をもって接続すれば、実施例と同様
の効果が得られる。FIG. 7 is a plan view showing another embodiment of the present invention. In the figure, the conductor lead 50 has through-holes formed at the same pitch as the electrode tip (the part that can be connected to the turn 2, that is, the corresponding part).
3, and that part is configured to have a smaller area than other parts. If the conductor leads 50 formed in this manner are connected through the same steps as in the above embodiment, the same effects as in the embodiment can be obtained.
上述の如くすることによって素子接続構造が得ることが
できる。By doing as described above, an element connection structure can be obtained.
要するに、上記各実施例によれば、太陽電池素子１上の
電極パターン２の剥れや割れが発生せず、複数個の太陽
電池素子１を平面上で直列に、高速度で接続することが
できる。これは、高エネルギー光熱源による瞬時急熱冷
凝固方式を採用し、かつ高エネルギー光熱源による熱影
響を太陽電池素子１０本体に与えることがないようにし
たものでおる。In short, according to each of the above embodiments, a plurality of solar cell elements 1 can be connected in series on a plane at high speed without peeling or cracking of the electrode pattern 2 on the solar cell element 1. can. This uses an instantaneous rapid heating and cooling method using a high-energy light-heat source, and prevents the solar cell element 10 from being affected by heat from the high-energy light-heat source.
すなわち、導体リード５に受光面側と裏面側の電極パタ
ーン２と同ピツチにスリットまたは透孔５３を設けてそ
の部分を他の部分５２よυ小面としだことにより、高エ
ネルギー光熱源照射による熱影咎を太陽電池素子本体に
与えることなく瞬時の急熱冷凝固を可能としたものであ
る。That is, by providing slits or through-holes 53 in the conductor lead 5 at the same pitch as the electrode patterns 2 on the light-receiving surface side and the back surface side, and making the slits or through-holes 53 appear at the same pitch as the electrode pattern 2 on the light-receiving surface side and the back surface side, and making the slits or through-holes 53 appear as υ facets compared to the other portions 52, the slits or through-holes 53 are formed on the conductor lead 5 at the same pitch as the electrode patterns 2 on the light-receiving surface side and the back surface side. This makes it possible to perform instantaneous rapid heating and cooling solidification without imparting thermal effects to the solar cell element body.
以上述べたように本発明によれば、以下の点で効果があ
る。As described above, the present invention is effective in the following points.
（１）光熱源の集光径を導体リードの最大幅より小さく
できるので、太陽′重油素子へ熱的影響を与えることが
なく、信頼性の高い接続構造を得ることができる。(1) Since the condensing diameter of the light and heat source can be made smaller than the maximum width of the conductor lead, a highly reliable connection structure can be obtained without thermally affecting the solar heavy oil element.
（２）太陽電池部材の導電パターンへの集光径の面債が
大きいので、短時間にはんだが溶融し、はんだ付性能が
良好で強固な接続構造を得ることができる。(2) Since the diameter of the condensed light on the conductive pattern of the solar cell member is large, the solder melts in a short time, and a strong connection structure with good soldering performance can be obtained.
第１図は従来の半導体装置の素子接続（ｊり造を示す平
面図、第２図は第１図の断面図、第３図は従来の他の半
導体装置の素子接続構造を示す断面図、第４図は本発明
の基礎となった事項を説明するために示す平面図、第５
図は熱光源照射の状態を示す断面図、第６図は本発明に
係る第１実施例を示す平面図、第７図は本発明に係る第
２実施例を示す平面図である。
１・・・太陽電池素子、２・・・電極パターン、３・・
・太陽電池部材、５０・・・導体リード、５１・・・ス
リット、ｔ１図
１２図
７３図
′Ｊｆｒ乙ＵFIG. 1 is a plan view showing an element connection structure of a conventional semiconductor device, FIG. 2 is a sectional view of FIG. 1, and FIG. 3 is a sectional view showing an element connection structure of another conventional semiconductor device. Figure 4 is a plan view shown to explain the basics of the present invention;
6 is a plan view showing a first embodiment of the present invention, and FIG. 7 is a plan view showing a second embodiment of the present invention. 1... Solar cell element, 2... Electrode pattern, 3...
・Solar cell member, 50... Conductor lead, 51... Slit, t1 Figure 12 Figure 73 Figure 'Jfr Otsu U
Claims (1)
パターンを設けてなる半導体部材の複数個をその表面が
同一方向を向くように横設し、当該中導体部材の電極パ
ターンとそれに隣接する半導体部材の電極パターンとを
４体リードをもって接続してなる半導体装置の素子接続
構造において、該導体リードは、該電極パターンに接続
される部分をその他の部分よシ小面積としたことを特徴
とする半導体装置の素子接続構造。 ２、特許請求の範囲第１項記載の半導体装置の素子接続
構造において、該導体リードの小面積は、導体リードの
当該電極パターンに接続される部分を切シ欠いて形成し
たことを特徴とする半導体装置の素子接続構造。 ３、特許請求の範囲第１項記載の半導体装置の素子接続
構造において、該導体リードの小面積は、導体リードの
当該電極パターンに接続される部分に透孔を穿設したこ
とを特徴とする半導体装置の素子接続構造。 ４、半導体素子の一方の表面とそれの裏面に電極パター
ンを形成した複数個の半導体部材を導体リードで接続す
る方法において、上記導体リードの電極パターンに接続
される部分に小面積部分を形成する工程と、該導体リー
ドを該電極ノくターンに当接せしめる工程と、該導体リ
ード表面側よシ光熱源をその非光幅が導体リードの幅と
略同−幅となるように照射する工程とを有することを特
徴とする半導体装置の素子接続方法。[Claims] 1. A plurality of semiconductor members each having an electrode pattern on one surface and the back surface of a semiconductor element are horizontally arranged so that their surfaces face in the same direction, and the electrodes of the middle conductor member are In an element connection structure of a semiconductor device in which a pattern and an electrode pattern of a semiconductor member adjacent thereto are connected by four leads, the conductor lead has a portion connected to the electrode pattern that has a smaller area than other portions. An element connection structure for a semiconductor device characterized by: 2. In the element connection structure for a semiconductor device according to claim 1, the small area of the conductor lead is formed by cutting out a portion of the conductor lead connected to the electrode pattern. Element connection structure of semiconductor devices. 3. In the element connection structure for a semiconductor device according to claim 1, the small area of the conductor lead is characterized in that a through hole is formed in a portion of the conductor lead connected to the electrode pattern. Element connection structure of semiconductor devices. 4. In a method of connecting a plurality of semiconductor members each having an electrode pattern formed on one surface and the back surface of a semiconductor element using a conductor lead, a small area portion is formed in the portion of the conductor lead connected to the electrode pattern. a step of bringing the conductor lead into contact with the electrode turn; and a step of irradiating the surface side of the conductor lead with a light heat source so that its non-light width is approximately the same width as the width of the conductor lead. A method for connecting elements of a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58118201A JPS6012778A (en) | 1983-07-01 | 1983-07-01 | Structure for element connection of semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58118201A JPS6012778A (en) | 1983-07-01 | 1983-07-01 | Structure for element connection of semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6012778A true JPS6012778A (en) | 1985-01-23 |
| JPH0478029B2 JPH0478029B2 (en) | 1992-12-10 |
Family
ID=14730683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58118201A Granted JPS6012778A (en) | 1983-07-01 | 1983-07-01 | Structure for element connection of semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6012778A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119274A (en) * | 1986-11-06 | 1988-05-23 | Sharp Corp | Solar cell element |
| JP2007157394A (en) * | 2005-12-01 | 2007-06-21 | Shinko Electric Ind Co Ltd | Dye-sensitized solar battery module and its manufacturing method |
| JP2008218578A (en) * | 2007-03-01 | 2008-09-18 | Sanyo Electric Co Ltd | Solar cell unit and solar cell module |
| CN102254993A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method for reducing unit consumption |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54153586A (en) * | 1978-05-25 | 1979-12-03 | Seiko Instr & Electronics Ltd | Semiconductor device |
-
1983
- 1983-07-01 JP JP58118201A patent/JPS6012778A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54153586A (en) * | 1978-05-25 | 1979-12-03 | Seiko Instr & Electronics Ltd | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119274A (en) * | 1986-11-06 | 1988-05-23 | Sharp Corp | Solar cell element |
| JP2007157394A (en) * | 2005-12-01 | 2007-06-21 | Shinko Electric Ind Co Ltd | Dye-sensitized solar battery module and its manufacturing method |
| JP2008218578A (en) * | 2007-03-01 | 2008-09-18 | Sanyo Electric Co Ltd | Solar cell unit and solar cell module |
| CN102254993A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method for reducing unit consumption |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0478029B2 (en) | 1992-12-10 |
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