JPS63246844A - Semiconductor fuse - Google Patents

Semiconductor fuse

Info

Publication number
JPS63246844A
JPS63246844A JP8148287A JP8148287A JPS63246844A JP S63246844 A JPS63246844 A JP S63246844A JP 8148287 A JP8148287 A JP 8148287A JP 8148287 A JP8148287 A JP 8148287A JP S63246844 A JPS63246844 A JP S63246844A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
polycrystalline silicon
silicon layer
layer
current
part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8148287A
Inventor
Masatoshi Matsushita
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To make it possible to perform fusing with a small amount of current, by selectively providing a first polycrystalline silicon layer on a thick oxide film on a silicon substrate, and providing a second polycrystalline silicon film layer, which holds an interlayer insulating film and crosses the first polycrystalline silicon layer.
CONSTITUTION: A first polycrystalline silicon layer 1 usually has a thickness of several thousand Å. A second polycrystalline silicon layer 3 is formed so as to hold an interlayer insulating film 2. A thin part 4 is formed in the second polycrystalline silicon layer 3 at a step part when the layer 3 crosses the first polycrystalline silicon layer 1. The steeper the step part, the thinner the thickness of the thin part 4 of the second polycrystalline silicon 3 at the step part. When a current is applied from metal electrodes 5 and 6, the current density can be concentrated at the thin part 4 of the step part. The second polycrystalline silicon layer 3 can be burned and cut with the small amount of the current in a short time.
COPYRIGHT: (C)1988,JPO&Japio
JP8148287A 1987-04-02 1987-04-02 Semiconductor fuse Granted JPS63246844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8148287A JPS63246844A (en) 1987-04-02 1987-04-02 Semiconductor fuse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8148287A JPS63246844A (en) 1987-04-02 1987-04-02 Semiconductor fuse

Publications (1)

Publication Number Publication Date
JPS63246844A true true JPS63246844A (en) 1988-10-13

Family

ID=13747620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8148287A Granted JPS63246844A (en) 1987-04-02 1987-04-02 Semiconductor fuse

Country Status (1)

Country Link
JP (1) JPS63246844A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6469029A (en) * 1987-09-10 1989-03-15 Nec Corp Semiconductor integrated circuit
US7417300B2 (en) 2006-03-09 2008-08-26 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof
US7460003B2 (en) * 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7645645B2 (en) 2006-03-09 2010-01-12 International Business Machines Corporation Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof
US7656005B2 (en) 2006-03-09 2010-02-02 International Business Machines Corporation Electrically programmable π-shaped fuse structures and methods of fabrication thereof
US7784009B2 (en) 2006-03-09 2010-08-24 International Business Machines Corporation Electrically programmable π-shaped fuse structures and design process therefore
JP2011216240A (en) * 2010-03-31 2011-10-27 Oki Semiconductor Co Ltd Current fuse, semiconductor device, and method of blowing the current fuse
US20130043972A1 (en) * 2011-08-16 2013-02-21 Kuei-Sheng Wu Electrical fuse structure

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6469029A (en) * 1987-09-10 1989-03-15 Nec Corp Semiconductor integrated circuit
US7417300B2 (en) 2006-03-09 2008-08-26 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof
US7460003B2 (en) * 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7531388B2 (en) 2006-03-09 2009-05-12 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabricating thereof
US7545253B2 (en) 2006-03-09 2009-06-09 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7645645B2 (en) 2006-03-09 2010-01-12 International Business Machines Corporation Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof
US7656005B2 (en) 2006-03-09 2010-02-02 International Business Machines Corporation Electrically programmable π-shaped fuse structures and methods of fabrication thereof
US7784009B2 (en) 2006-03-09 2010-08-24 International Business Machines Corporation Electrically programmable π-shaped fuse structures and design process therefore
JP2011216240A (en) * 2010-03-31 2011-10-27 Oki Semiconductor Co Ltd Current fuse, semiconductor device, and method of blowing the current fuse
US20130043972A1 (en) * 2011-08-16 2013-02-21 Kuei-Sheng Wu Electrical fuse structure
US8922328B2 (en) * 2011-08-16 2014-12-30 United Microelectronics Corp. Electrical fuse structure

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