JPS57176723A - Selectively forming method for pattern - Google Patents
Selectively forming method for patternInfo
- Publication number
- JPS57176723A JPS57176723A JP6170881A JP6170881A JPS57176723A JP S57176723 A JPS57176723 A JP S57176723A JP 6170881 A JP6170881 A JP 6170881A JP 6170881 A JP6170881 A JP 6170881A JP S57176723 A JPS57176723 A JP S57176723A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- etchant
- isopropyl alcohol
- approx
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To omit baking and plasma ashing steps after a development by interposing a pretreating step of alcohol substituting method between a resist developing step and a pattern forming step. CONSTITUTION:A resist film is covered on a material to be formed in a pattern of a semiconductor device, an electron beam or X-ray is emitted to expose the film, the film is developed, is then rinsed with isopropyl alcohol for approx. 20sec., is then purged with nitrogen gas, the isopropyl alcohol is substituted for approx. 10sec, the film is then dipped in an etchant, and a selective pattern is formed on the material to be formed in a pattern of the semiconductor device with the film formed on the pattern as a mask. Since the isopropyl alcohol is readily draped with etchant, the etchant is preferably contacted with the material to be formed in a pattern, and no deformation of a side effect of plasma ashing takes place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6170881A JPS57176723A (en) | 1981-04-23 | 1981-04-23 | Selectively forming method for pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6170881A JPS57176723A (en) | 1981-04-23 | 1981-04-23 | Selectively forming method for pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57176723A true JPS57176723A (en) | 1982-10-30 |
Family
ID=13178996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6170881A Pending JPS57176723A (en) | 1981-04-23 | 1981-04-23 | Selectively forming method for pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57176723A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH022515A (en) * | 1988-06-16 | 1990-01-08 | Matsushita Electric Ind Co Ltd | Manufacture of orienting film for liquid crystal |
| US5227341A (en) * | 1991-02-14 | 1993-07-13 | Sony Corporation | Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step |
-
1981
- 1981-04-23 JP JP6170881A patent/JPS57176723A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH022515A (en) * | 1988-06-16 | 1990-01-08 | Matsushita Electric Ind Co Ltd | Manufacture of orienting film for liquid crystal |
| US5227341A (en) * | 1991-02-14 | 1993-07-13 | Sony Corporation | Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step |
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