JPS6480957A - Defect inspection method - Google Patents
Defect inspection methodInfo
- Publication number
- JPS6480957A JPS6480957A JP23715587A JP23715587A JPS6480957A JP S6480957 A JPS6480957 A JP S6480957A JP 23715587 A JP23715587 A JP 23715587A JP 23715587 A JP23715587 A JP 23715587A JP S6480957 A JPS6480957 A JP S6480957A
- Authority
- JP
- Japan
- Prior art keywords
- transfer part
- defect
- negative
- negative transfer
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To improve the inspection accuracy of an extremely small defect by transferring a defect formed in an object area of inspection on an original plate to the resist film as a sample, and then expanding the part where the defect is transferred in an etching process. CONSTITUTION:The object area of inspection on a mask 1 is transferred to the negative resist film of a 1st sample 10 by exposure and development as a pattern negative transfer part 13, a black defect negative transfer part 14, and a white defect negative transfer part 15. Then the 1st sample 10 is etched to deform the pattern negative transfer part 13 into a reduced negative transfer part 13A, the black defect negative transfer part 14 into an expanded negative transfer part 14A, and the white defect negative transfer part 15 into a disappearing negative transfer part 15A. Similarly, they are deformed into an expanded positive transfer part 23A, a disappearing positive transfer part 24A, and an expanded transfer part 25A on the positive resist film 22 of a 2nd sample. Consequently, even the extremely small defect is inspected with sufficient accuracy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23715587A JPS6480957A (en) | 1987-09-24 | 1987-09-24 | Defect inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23715587A JPS6480957A (en) | 1987-09-24 | 1987-09-24 | Defect inspection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6480957A true JPS6480957A (en) | 1989-03-27 |
Family
ID=17011217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23715587A Pending JPS6480957A (en) | 1987-09-24 | 1987-09-24 | Defect inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6480957A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015028978A (en) * | 2013-07-30 | 2015-02-12 | 大日本印刷株式会社 | Foreign matter detection method, imprint method, and imprint system |
| JP2015032792A (en) * | 2013-08-06 | 2015-02-16 | 大日本印刷株式会社 | Defect correction method, inspection method and manufacturing method of template for nanoimprint lithography |
| JP2016149506A (en) * | 2015-02-13 | 2016-08-18 | 大日本印刷株式会社 | Inspection method, defect correction method and production method of template for nanoimprint lithography |
-
1987
- 1987-09-24 JP JP23715587A patent/JPS6480957A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015028978A (en) * | 2013-07-30 | 2015-02-12 | 大日本印刷株式会社 | Foreign matter detection method, imprint method, and imprint system |
| JP2015032792A (en) * | 2013-08-06 | 2015-02-16 | 大日本印刷株式会社 | Defect correction method, inspection method and manufacturing method of template for nanoimprint lithography |
| JP2016149506A (en) * | 2015-02-13 | 2016-08-18 | 大日本印刷株式会社 | Inspection method, defect correction method and production method of template for nanoimprint lithography |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW364160B (en) | Simulation method in lithographic process | |
| DE3475117D1 (en) | Process for obtaining negative copies using a 1,2-quinone diazide material | |
| JPS6480957A (en) | Defect inspection method | |
| JPS5461931A (en) | Forming method of photo resist patterns | |
| JPS55157737A (en) | Resist pattern forming method for photofabrication | |
| JPS55135837A (en) | Manufacture of photomask | |
| JPS56137632A (en) | Pattern forming | |
| JPS5580323A (en) | Pattern forming method for photoresist-film | |
| JPS5623746A (en) | Manufacture of semiconductor device | |
| JPS5559722A (en) | Producing method of electron beam drawing photomask | |
| JPS57112753A (en) | Exposure method | |
| JPS5655950A (en) | Photographic etching method | |
| JPS55128832A (en) | Method of making minute pattern | |
| JPS5754274A (en) | Method for processing grooved dynamic pressure type bearing | |
| JPS6421450A (en) | Production of mask | |
| JPS53147531A (en) | Forming method for thin film pattern | |
| JPS542071A (en) | Inspection method of pattern defect for photo mask | |
| JPS5746241A (en) | Reversal dry developing method | |
| JPS56167329A (en) | Piling joint setting mark to be used in fine processing exposure technology | |
| JPS5448653A (en) | Etching of metal plate | |
| JPS57176723A (en) | Selectively forming method for pattern | |
| JPS57180127A (en) | Formation of resist pattern | |
| JPS55134845A (en) | Electron beam resist | |
| JPS649459A (en) | Method for correcting white defect of photomask | |
| JPS5656633A (en) | Manufacture of semiconductor element |