JPS649459A - Method for correcting white defect of photomask - Google Patents

Method for correcting white defect of photomask

Info

Publication number
JPS649459A
JPS649459A JP16471287A JP16471287A JPS649459A JP S649459 A JPS649459 A JP S649459A JP 16471287 A JP16471287 A JP 16471287A JP 16471287 A JP16471287 A JP 16471287A JP S649459 A JPS649459 A JP S649459A
Authority
JP
Japan
Prior art keywords
film
mask
exposed
defect
metallic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16471287A
Other languages
Japanese (ja)
Inventor
Kazuharu Magota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP16471287A priority Critical patent/JPS649459A/en
Publication of JPS649459A publication Critical patent/JPS649459A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To prevent the generation of a black defect by covering a correcting metallic film formed on a white defect part selectively with an etching resistant mask, then etching away the exposed metallic film. CONSTITUTION:A mask pattern 2 consisting of metal such as Cr is formed on a substrate 1 to detect the white defective part 4. After a photoresist film 5 is then formed over the entire surface, the defective part 4 is selectively exposed and the exposed film 5' is removed by development. The metallic film consisting of Cr, etc., is in succession deposited over the entire surface and further, the film 7 on the defect 4 is selectively covered by the etching resistant mask 8. The same material as the material of the pattern 2 is usable for the mask 8. The exposed metallic film 7' is then removed by, for example, chemical etching and the film 7' is dissolved by which the cause for generating the black defect is eliminated. The film 5 and the mask 8 are removed in the final and the correction is completed.
JP16471287A 1987-07-01 1987-07-01 Method for correcting white defect of photomask Pending JPS649459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16471287A JPS649459A (en) 1987-07-01 1987-07-01 Method for correcting white defect of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16471287A JPS649459A (en) 1987-07-01 1987-07-01 Method for correcting white defect of photomask

Publications (1)

Publication Number Publication Date
JPS649459A true JPS649459A (en) 1989-01-12

Family

ID=15798452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16471287A Pending JPS649459A (en) 1987-07-01 1987-07-01 Method for correcting white defect of photomask

Country Status (1)

Country Link
JP (1) JPS649459A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106569387A (en) * 2015-10-09 2017-04-19 中芯国际集成电路制造(北京)有限公司 Mask and repair method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106569387A (en) * 2015-10-09 2017-04-19 中芯国际集成电路制造(北京)有限公司 Mask and repair method thereof
CN106569387B (en) * 2015-10-09 2021-03-23 中芯国际集成电路制造(北京)有限公司 Photomask and repairing method thereof

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