JPS56125742A - Method for correcting photomask pattern defect - Google Patents
Method for correcting photomask pattern defectInfo
- Publication number
- JPS56125742A JPS56125742A JP2898380A JP2898380A JPS56125742A JP S56125742 A JPS56125742 A JP S56125742A JP 2898380 A JP2898380 A JP 2898380A JP 2898380 A JP2898380 A JP 2898380A JP S56125742 A JPS56125742 A JP S56125742A
- Authority
- JP
- Japan
- Prior art keywords
- film
- defect
- mask
- light shielding
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To eliminate necessity for detection of defect positions of each sheet and spot exposure, by using positive and negative type resists and another photomask having the same pattern as a mask in order to correct a light shielding film having light passing defects. CONSTITUTION:Light shielding film 2, such as Cr film having light transmitting defect 4 and positive type resist film 5 for covering glass substrate 1 are formed, after that, uniformly exposed from the side of substrate 1, and developed to disclose uniformly coated, then, light shielding film 2a having the same pattern as that of the photomask to be corrected and a mask having light transmitting part 3a are placed on film 7, and this is exposed L and developed. Vapor deposited film, such as Cr 6 is formed on the whole surface including defect 4. The residual resist films 5, 7 are removed together with film 6 on resist 7 so as to leave vapor deposited film 6 on defect 4. Even if a defect is present on another photomask, since the probability of presence of a defect on the same position as that of the mask to be corrected is extremely small, it can be satisfactorily used for correction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2898380A JPS56125742A (en) | 1980-03-05 | 1980-03-05 | Method for correcting photomask pattern defect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2898380A JPS56125742A (en) | 1980-03-05 | 1980-03-05 | Method for correcting photomask pattern defect |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56125742A true JPS56125742A (en) | 1981-10-02 |
Family
ID=12263644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2898380A Pending JPS56125742A (en) | 1980-03-05 | 1980-03-05 | Method for correcting photomask pattern defect |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56125742A (en) |
-
1980
- 1980-03-05 JP JP2898380A patent/JPS56125742A/en active Pending
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