JPS57180127A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS57180127A
JPS57180127A JP6591081A JP6591081A JPS57180127A JP S57180127 A JPS57180127 A JP S57180127A JP 6591081 A JP6591081 A JP 6591081A JP 6591081 A JP6591081 A JP 6591081A JP S57180127 A JPS57180127 A JP S57180127A
Authority
JP
Japan
Prior art keywords
resist
exposed part
developed
oxygen plasma
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6591081A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6591081A priority Critical patent/JPS57180127A/en
Publication of JPS57180127A publication Critical patent/JPS57180127A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To make the difference of oxidization speed between exposed part and non-exposed part of resist sufficiently large when the resist is developed in oxygen plasma by treating the resist by fluorinated radical before it is exposed and developed. CONSTITUTION:A theremal oxide film 2 is accumulated on an Si wafer 1 and the film 2 is coated by positive type photoresist 3. Then after the required pattern is projected on the resist 3, the surface of the resist 3 is treatd by fluorinated radical. After that resist pattern 4 is formed by developing the resist 3 in oxygen plasma. With this constitution, the difference of oxidization speed between exposed part and non-exposed part of the resist 3 can be made sufficiently large when the resist 3 is developed in the oxygen plasma, so that the pattern 4 can be formed with high accuracy and high reproducibility.
JP6591081A 1981-04-30 1981-04-30 Formation of resist pattern Pending JPS57180127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6591081A JPS57180127A (en) 1981-04-30 1981-04-30 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6591081A JPS57180127A (en) 1981-04-30 1981-04-30 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS57180127A true JPS57180127A (en) 1982-11-06

Family

ID=13300584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6591081A Pending JPS57180127A (en) 1981-04-30 1981-04-30 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS57180127A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266594A (en) * 2006-03-07 2007-10-11 Asml Netherlands Bv Enhanced lithography patterning process and system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266594A (en) * 2006-03-07 2007-10-11 Asml Netherlands Bv Enhanced lithography patterning process and system

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