JPS5919324A - Exposing device - Google Patents

Abstract

PURPOSE:To enable to transfer both of an X-ray exposure pattern and an optical rays exposure pattern by a method wherein an X-ray generating source and an optical rays source generating far ultraviolet rays are provided in one body on the upper part of a semiconductor wafer through the intermediary of a mask for exposure. CONSTITUTION:On the upper part of a semiconductor wafer 3 whereon a prescribed shape of microscopic pattern will be formed, a mask 5 for X-ray exposure consisting of a nitride film or a polyimide film having a microscopic pattern 5a on the surface is arranged. On the upper part of the mask 5 leaving a prescribed distance, together with an X-ray generating source 1, an optical rays generating source 9 having an optical source 6 which generates far ultraviolet rays l, a lens 7 which focusses said ultraviolet rays l, and a reflection mirror 8 which reflects the focussed light in the direction where a mask 5 to be used for X-ray exposure, is arranged in such a manner that they are formed in one body.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a side light device, and more particularly to an exposure device that is capable of transferring a range from fine patterns to relatively large patterns onto a semiconductor wafer.

FIG. 1 is a schematic diagram showing an example of a conventional transfer device for X-ray exposure. In the same figure, (1) is Targera) (1
m) is an X-ray generation source that irradiates electron beam b to emit X rays, (2) is an x&l exposure mask having a fine pattern (2&) on its surface, and (3) is an X-ray photosensitive film ( 4)
was formed, and the XMA light mask (
This is a semiconductor wafer on which a pattern corresponding to the fine pattern (2a) of 2) is formed.

The characteristics of X-ray exposure using the X-ray exposure transfer device configured in this way are that submicron processing is possible;
The production of the X-ray exposure mask (21) is extremely complicated and difficult to manufacture easily. Therefore, when using a large number of the same mask for mass X-ray exposure, the throughput ( However, in the case of low-volume, high-mix production, or in cases where only a part of the mask pattern (2 m) is changed and no light is produced, such as in the case of mask ROM, the mask (2) must go through multiple processes each time. It needed to be produced.

Furthermore, when exposing only simple patterns, it is not compatible with other exposure equipment, so it is necessary to perform X-ray exposure throughout the entire process, and throughput does not increase. It also had the disadvantage of being long-term.

Therefore, this invention was made to eliminate the above-mentioned drawbacks of the conventional technology, and its purpose is to integrate an X-ray exposure source and a light exposure source onto a semiconductor wafer. An object of the present invention is to provide an exposure apparatus that is capable of transferring patterns for both X-ray exposure and light exposure.

Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 2 is a schematic configuration diagram showing an example of an exposure apparatus according to the present invention. In the figure, above the semiconductor wafer (3) on which a fine pattern of the desired shape is formed, there is an X-ray exposure mask (5) made of, for example, a nitride film or a polyimide film, which has a fine pattern (5a) on its surface. In addition, at a position spaced a predetermined distance above this X-ray exposure mask (5), there is a light source (6) that generates far ultraviolet light t as well as an X-ray source +11. Lens that focuses (7)
A light generation source (9) equipped with a reflecting mirror (8) that reflects this focused light in the direction of arrangement of the X-ray exposure mask (51) is integrally disposed within, for example, an exposure table (not shown). .

Next, a specific method of using the exposure apparatus configured as described above will be explained. First, as shown in Fig. 3, on a semiconductor wafer (3) on which a fine pattern is to be formed, a FiCMS (manufactured by Toyo Soda), which is photosensitive to both X-rays and light, is placed on a semiconductor wafer (3) on which a fine pattern is to be formed.
After forming a resist film α1 with a thickness of about 6000^, the semiconductor wafer (3
1 to the above Xf! It is placed at a predetermined position below the exposure mask (5). Then, the X-ray source (1) generates X @ x, and it is partially shielded by the variable aperture Oυ.
A pattern corresponding to the fine pattern (51) of the line exposure mask (5) is transferred onto the resist film Ql on the semiconductor wafer (3). In this case, the X-ray source is soft X-ray (MOL
, λ=5.4^), and irradiation of approximately 15 mJ/aJ is performed. Further, while X-rays are being generated, the light source (9) is shielded from light by disposing a light shielding plate a3 between the lens (7) and the reflecting mirror (8). Next, as shown in Figure 4, after shielding the X@X generated from the X-ray source (11) with the X-ray shielding plate Q3, the X** light mask (5) shown in Figure 3 is removed. , a light exposure mask (141) with a relatively large pattern (1b) formed on a translucent glass plate is placed in that area, the light shielding temporary housing 4 is opened, and the far-ultraviolet light focused by the lens (71) is placed at that location. The light t is reflected by a reflecting mirror (8), passes through a variable aperture αυ, and a pattern corresponding to a relatively large pattern (14 m) formed on a part of the optical mask (14+) is formed on a semiconductor wafer (3). The upper resist film (IlIK transfer is performed. In this case, the light source (6) is Xs of about 500W.
Irradiation was performed for about 40 seconds using a Hg lamp. and,
After completion of exposure, apply the specified developer (MEK:IPA=7:3)
The film was developed and rinsed (IPA) to obtain a fine pattern. The pattern thus obtained had good edge sharpness and was extremely sharp.

In this way, conventionally, when manufacturing X-ray exposure masks, it was necessary to manufacture X-ray exposure masks for all types and all processes, but according to the above-mentioned configuration, x! Since exposure using I and other processes can be performed using the same device, compatibility between devices becomes unnecessary. In addition, when changing only a part of the pattern in a chip such as a mask ROM, it was necessary to make an XMji light mask each time, but instead of making the common part with an X-ray exposure mask (5), it is possible to change only the changed part. By using the light exposure mask αShu, which is relatively easy to manufacture, the manufacturing period of the mask is quick and it becomes possible to easily obtain a fine pattern.

In the above-described embodiments, two types of exposure masks, an X-ray exposure mask and a light exposure mask, were used. However, the present invention is not limited to this, and the light transmission mask is A standard X-ray exposure mask may also be used; in this case, the effect of eliminating the need to replace the mask and the same effect as described in 1 above can be obtained. Also,
In the above-mentioned embodiments, a method using projection was described as a light exposure method, but the present invention is not limited to this, and similar effects can be obtained by a method that does not use a reflecting mirror. Also, the exposure order is also X! I
The same effect can be obtained in any order of the jl light and the light exposure.

Figure 5 is a schematic configuration diagram showing another embodiment of the exposure apparatus and method of using the same according to the present invention, in which the same symbols as in the previous figures indicate the same corresponding parts and the explanation thereof will be omitted. In the same figure,
al is a 1/1o X-ray exposure mask, ae is a reticle, and aη is a reduction lens.

In such a configuration, the semiconductor wafer (31) may be placed on a slurry (not shown) and operated in the Y-axis direction, and X-ray exposure and light exposure may be performed simultaneously or in combination using a step-and-repeat method. , similar effects to those of the above-mentioned embodiments can be obtained.

As explained above, according to the present invention, it is possible to easily transfer patterns using both XMAg light and light exposure using the same device, which greatly improves throughput and shortens the construction period. You can get the same effect.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram showing an example of a conventional X-ray exposure transfer device, FIG. 2 is a schematic configuration diagram showing an example of an exposure device according to the present invention, and FIGS. 3 and 4 are a schematic configuration diagram showing an example of an exposure device according to the present invention. FIG. 5 is a schematic diagram showing another embodiment of the exposure apparatus according to the present invention. +11...X-ray source, (1a)...Targera), 12+...X-ray exposure mask, (2')...
・Fine pattern, (3)...Semiconductor wafer, (4)
... (8)...Reflector, (
9)...Light generation source, OI...Res) film, Ov
...Variable aperture, 03...Light shielding plate, 0...
...X-ray shielding plate, 041...Light exposure mask, (1
4m) ...Pattern, aQ...XMIII
i-light mask, aQ...reticle, (11...
reduction lens. Agent Makoto Kuzuno - Procedural amendment (voluntary) Commissioner of the Japan Patent Office 1. Indication of the case: Japanese Patent Application No. 57-130023 2. Name of the invention Exposure device 3. Part 5: Amendment to representative Katayuni Kata of the person making the amendment Column 6 of Detailed Description of the Invention in the Subject Specification, Contents of Amendment 111 "Soft XIIj (MO
L, λ = 5.4
X) Correct as J. that's all

Claims (1)

[Claims] An exposure apparatus characterized in that an X-ray generation source that generates X1m and a light source that generates deep ultraviolet light are integrally provided above a semiconductor wafer on which a desired pattern is to be formed through an exposure mask.