JPS5518673A - Ionized radiation sensitive negative type resist - Google Patents
Ionized radiation sensitive negative type resistInfo
- Publication number
- JPS5518673A JPS5518673A JP9237578A JP9237578A JPS5518673A JP S5518673 A JPS5518673 A JP S5518673A JP 9237578 A JP9237578 A JP 9237578A JP 9237578 A JP9237578 A JP 9237578A JP S5518673 A JPS5518673 A JP S5518673A
- Authority
- JP
- Japan
- Prior art keywords
- alkyl
- ionized radiation
- irradiated
- chlorine
- negative type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To form an ionized radiation sensitive negative type resist having high sensitivity, high resistance to dry etching, and high resolution, and low molecular weight, by using a polymer consisting mainly of an acrylate derivative monomer containing chlorine or sulfur. CONSTITUTION:A 10 weight % solution of a polymer or copolymer of alpha- monochloromethyl-thioleglycidyl acrylate of formulaIin which R is H, alkyl, chlorinated alkyl, or chlorine, R' is S or O, and when R is H or alkyl, R' is S; and R'' is S or O, is coated and dried on the substrate of a silicon wafer to form a resist film. The dried film is irradiated by electron beams or the like to form a latent pattern and this is developed. Chlorine or sulfur contained in the molecules permits crosslinking performance due to ionized radiation to be improved, the solubility difference between the irradiated and unirradiated areas to be enlarged, the resist film in the irradiated area after development not to meander, and little scum to be caused. Accordingly, sensitivity, resolution, and dry etching resistance can be enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9237578A JPS5518673A (en) | 1978-07-28 | 1978-07-28 | Ionized radiation sensitive negative type resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9237578A JPS5518673A (en) | 1978-07-28 | 1978-07-28 | Ionized radiation sensitive negative type resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5518673A true JPS5518673A (en) | 1980-02-08 |
Family
ID=14052670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9237578A Pending JPS5518673A (en) | 1978-07-28 | 1978-07-28 | Ionized radiation sensitive negative type resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5518673A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162156A (en) * | 1983-03-07 | 1984-09-13 | 有限会社ビツクスト−ン | Method of preventing paint layer break-away and crack by setting surface double layer pattern with cementitious spraymaterial |
JPS61221301A (en) * | 1985-03-27 | 1986-10-01 | Munekata Kk | Composition for metallic green compact |
JPS63194051A (en) * | 1987-02-05 | 1988-08-11 | ニチアス株式会社 | Refractory coating construction method of reinforcing bar |
JPS6453313U (en) * | 1987-09-28 | 1989-04-03 | ||
JPH0762245A (en) * | 1993-08-30 | 1995-03-07 | Ito Sangyo:Kk | Inorganic reactive type coating material and method for finishing of natural stone tone |
WO2001074916A1 (en) * | 2000-04-04 | 2001-10-11 | Daikin Industries, Ltd. | Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same |
JP2010538155A (en) * | 2008-08-18 | 2010-12-09 | アイユーシーエフ−エイチワイユー(インダストリー−ユニバーシティ コーオペレーション ファウンデーション ハンヤン ユニバーシティ) | Copolymer for resist containing photoacid generator and method for producing the same |
-
1978
- 1978-07-28 JP JP9237578A patent/JPS5518673A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162156A (en) * | 1983-03-07 | 1984-09-13 | 有限会社ビツクスト−ン | Method of preventing paint layer break-away and crack by setting surface double layer pattern with cementitious spraymaterial |
JPS61221301A (en) * | 1985-03-27 | 1986-10-01 | Munekata Kk | Composition for metallic green compact |
JPS63194051A (en) * | 1987-02-05 | 1988-08-11 | ニチアス株式会社 | Refractory coating construction method of reinforcing bar |
JPH0437215B2 (en) * | 1987-02-05 | 1992-06-18 | Nichias Corp | |
JPS6453313U (en) * | 1987-09-28 | 1989-04-03 | ||
JPH0762245A (en) * | 1993-08-30 | 1995-03-07 | Ito Sangyo:Kk | Inorganic reactive type coating material and method for finishing of natural stone tone |
WO2001074916A1 (en) * | 2000-04-04 | 2001-10-11 | Daikin Industries, Ltd. | Novel fluoropolymer having acid-reactive group and chemical amplification type photoresist composition containing the same |
US6908724B2 (en) | 2000-04-04 | 2005-06-21 | Daikin Industries, Ltd. | Fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same |
JP2010538155A (en) * | 2008-08-18 | 2010-12-09 | アイユーシーエフ−エイチワイユー(インダストリー−ユニバーシティ コーオペレーション ファウンデーション ハンヤン ユニバーシティ) | Copolymer for resist containing photoacid generator and method for producing the same |
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