JPS59116745A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS59116745A
JPS59116745A JP22582982A JP22582982A JPS59116745A JP S59116745 A JPS59116745 A JP S59116745A JP 22582982 A JP22582982 A JP 22582982A JP 22582982 A JP22582982 A JP 22582982A JP S59116745 A JPS59116745 A JP S59116745A
Authority
JP
Japan
Prior art keywords
resist
irradiating
pattern
electron beams
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22582982A
Other languages
Japanese (ja)
Inventor
Seiji Akimoto
誠司 秋本
Kazuo Toda
和男 戸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22582982A priority Critical patent/JPS59116745A/en
Publication of JPS59116745A publication Critical patent/JPS59116745A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

PURPOSE:To form a satisfactory resist pattern free from shift in the position due to the irradiation of electron beams by coating a substrate with a photoconductive resist and by irradiating electron beams on the resist while irradiating light. CONSTITUTION:A substrate is coated with a photoconductive resist such as polyvinylcarbazole represented by the formula to about 0.8-1.5mum thickness by spin coating or other method. The resist is exposed by irradiating electron beams on the resist at 20kV while irradiating light of about 300-500nm wavelengths, and the exposed resist is developed. Electric conductivity is provided to the polyvinylcarbazole by irradiating light of 300-500nm wavelengths. By providing electric conductivity to the resist, the accumulation of unnecessary charges in a pattern formed by irradiating electron beams can be prevented. Accordingly, continuous accurate patterning is enabled, and a shift in the position of the resulting resist pattern can be reduced. Polyvinylpyrene, polyvinylacrylene or the like may be used as said photoconductive resist.

Description

【発明の詳細な説明】 （１）発明の技術分野 本発明はパターン形成方法に関するものであシ、特に電
子線を照射して微細パターンを形成する方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a pattern forming method, and particularly to a method of forming a fine pattern by irradiating an electron beam.

（２）技術の背景 ＩＣ、ＬＳＩなどの半導体装置が高密度化されるにつれ
て微細加工技術の確立がよシ重要と々って来た。加工技
術においてはポリマの反応性、溶解性を利用してパター
ンを形成しこれをマスクとして基板加工を行うリングラ
フィが従来から使用されている。リングラフィにおいて
はポリマの反応にあずかるエネルギー源としては高解像
性ヲ得るために従来の紫外線から回折散乱効果の７］＼
さい高エネルギー線である電子線（ＥＢ）が使用されて
いる。(2) Technical background As semiconductor devices such as ICs and LSIs become more densely packed, the establishment of microfabrication technology has become increasingly important. As for processing technology, phosphorography has been used in the past, in which a pattern is formed using the reactivity and solubility of a polymer, and the pattern is used as a mask to process a substrate. In phosphorography, the energy source that takes part in the polymer reaction is the diffraction scattering effect from conventional ultraviolet light to obtain high resolution.
Electron beams (EB), which are high energy beams, are used.

（３）従来技術と問題点 従来、例えばポリメチルメタクリレート（ＰＩＧ’ＩＡ
）等の電子線レジストをノやターニングするには、基板
上に該レジストをスピンコード法、スジレイ法等によシ
塗布し、該レジストに電子線ビームを選択的に照射し、
そのノｅターンを現像することによって行われる。この
ように電子線を用いてレジストを用いてレジストをパタ
ーニングする場合、レジストに電子線全照射した時に照
射部のレジスト周辺に電荷が蓄積される。すなわち連続
してパターニングする際、次のショット位置が前回の露
光によって生じた電荷によってずらされる。(3) Prior art and problems Conventionally, for example, polymethyl methacrylate (PIG'IA)
) and other electron beam resists, the resist is coated on a substrate by a spin code method, a streak ray method, etc., and the resist is selectively irradiated with an electron beam.
This is done by developing the noe turn. When patterning a resist using an electron beam in this manner, when the entire resist is irradiated with the electron beam, charges are accumulated around the irradiated portion of the resist. That is, when patterning is performed continuously, the position of the next shot is shifted due to the charge generated by the previous exposure.

（４）発明の目的 上記欠点を鑑み本発明は電子線を照射しても位置ずれの
ない良好なレジスト・ヤターンを形成する方法を提供す
ることを目的とする。(4) Purpose of the Invention In view of the above-mentioned drawbacks, an object of the present invention is to provide a method for forming a good resist pattern that does not shift even when irradiated with an electron beam.

（５）発明の構成 本発明の目的は基板上に光導電性レジストを塗布し、次
に該レジストに光を照射しながら電子線を照射する工程
を含んでなることを特徴とするレジストパターンの形成
方法によって達成される。(5) Structure of the Invention The object of the present invention is to provide a resist pattern comprising the steps of applying a photoconductive resist onto a substrate, and then irradiating the resist with an electron beam while irradiating the resist with light. This is accomplished by a forming method.

（６）発明の実施例 以下本発明を実施例に基づいて説明する。例えばシリコ
ン基板上にポリビニルカルバゾール１．５μ塗布し、 該レジスト全体に、約３００ないし５００　ｎｍの波長
を有する光を照射しながら電子線を照射して露光、現像
を行なった。電子線の照射条件は加速電圧２０　ｋＶで
行彦っだ。ポリビニルカルバゾールは３００ないし５０
０　ｎｍの波長を壱する光を照射することにより導電性
を有するものである。(6) Examples of the Invention The present invention will be explained below based on Examples. For example, 1.5μ of polyvinylcarbazole was coated on a silicon substrate, and the entire resist was exposed and developed by irradiating it with an electron beam while irradiating it with light having a wavelength of about 300 to 500 nm. The electron beam irradiation conditions were set at an acceleration voltage of 20 kV. Polyvinyl carbazole is 300 to 50
It becomes conductive when irradiated with light having a wavelength of 0 nm.

このようにレジストに導電性を持たぜることによって電
子線を照射した時に形成されたパターンに不要の電荷が
蓄積されるのが防止される、従って連続して正確な・ぐ
ターニングをすることが可能となり、レジス）ノＪター
ンの位置ずれが従来の（１１５）〜（１／１０　）程度
と向上させることが出来た。By making the resist conductive in this way, unnecessary charges are prevented from accumulating in the pattern formed when the electron beam is irradiated, thus making it possible to perform continuous and accurate turning. This made it possible to improve the positional deviation of the register J-turn to about (115) to (1/10) of the conventional method.

（７）発明の詳細 な説明したように本発明によれは、電子線照射によって
所望の・やターンに精度よく露光し得るために位置ずれ
のない良好なレジストパターンを得ることが出来る。(7) Detailed Description of the Invention As described in detail, according to the present invention, it is possible to accurately expose a desired turn by electron beam irradiation, and thus a good resist pattern without positional deviation can be obtained.

−２し-2

Claims (1)

【特許請求の範囲】 １、基板上に光導電性レジストを塗布し、次に前記レジ
ストに光を照射しながら電子線を照射する工程を含んで
なることを特徴とするレジストのノやターン形成方法。 ２　前記光導電性レジストがポリビニルカルバゾール（
ＰＶＣｚ　）、ポリビニルピレン（ｐｖｐ　、り又はポ
リビニルアクリジン（ＰＶＡｃｒ）であることを特徴と
する特許請求の範囲第１項記載の方法。 ３．３００ないし５００　ｎｍの波長の光を該レジスト
に照射することを特徴とする特許請求の範囲第１項又は
第２項に記載の方法。[Claims] 1. Formation of holes and turns in a resist, which comprises the steps of applying a photoconductive resist on a substrate, and then irradiating the resist with an electron beam while irradiating the resist with light. Method. 2 The photoconductive resist is polyvinylcarbazole (
The method according to claim 1, characterized in that the resist is polyvinylpyrene (PVCz), polyvinylpyrene (PVP), or polyvinylacridine (PVAcr). 3. Irradiating the resist with light having a wavelength of 300 to 500 nm. A method according to claim 1 or 2, characterized in that:
JP22582982A 1982-12-24 1982-12-24 Formation of pattern Pending JPS59116745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22582982A JPS59116745A (en) 1982-12-24 1982-12-24 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22582982A JPS59116745A (en) 1982-12-24 1982-12-24 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS59116745A true JPS59116745A (en) 1984-07-05

Family

ID=16835453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22582982A Pending JPS59116745A (en) 1982-12-24 1982-12-24 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS59116745A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125019A (en) * 1984-11-16 1986-06-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of ic and photoconductive photoresist composite used therefor
JPS6320830A (en) * 1986-07-14 1988-01-28 Toshiba Corp Fine processing
US4810617A (en) * 1985-11-25 1989-03-07 General Electric Company Treatment of planarizing layer in multilayer electron beam resist
US5441849A (en) * 1988-07-11 1995-08-15 Hitachi, Ltd. Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer
US5994007A (en) * 1997-12-19 1999-11-30 Kabushiki Kaisha Toshiba Pattern forming method utilizing first insulative and then conductive overlayer and underlayer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125019A (en) * 1984-11-16 1986-06-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of ic and photoconductive photoresist composite used therefor
US4810617A (en) * 1985-11-25 1989-03-07 General Electric Company Treatment of planarizing layer in multilayer electron beam resist
JPS6320830A (en) * 1986-07-14 1988-01-28 Toshiba Corp Fine processing
US5441849A (en) * 1988-07-11 1995-08-15 Hitachi, Ltd. Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer
US5994007A (en) * 1997-12-19 1999-11-30 Kabushiki Kaisha Toshiba Pattern forming method utilizing first insulative and then conductive overlayer and underlayer

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