JPS5640823A - Forming method of negative type photoresist pattern - Google Patents

Forming method of negative type photoresist pattern

Info

Publication number
JPS5640823A
JPS5640823A JP11605579A JP11605579A JPS5640823A JP S5640823 A JPS5640823 A JP S5640823A JP 11605579 A JP11605579 A JP 11605579A JP 11605579 A JP11605579 A JP 11605579A JP S5640823 A JPS5640823 A JP S5640823A
Authority
JP
Japan
Prior art keywords
negative type
ultraviolet rays
substrate
photoresist pattern
qda
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11605579A
Other languages
Japanese (ja)
Other versions
JPS6053867B2 (en
Inventor
Yoshio Yamashita
Mitsumasa Kunishi
Takaharu Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP11605579A priority Critical patent/JPS6053867B2/en
Publication of JPS5640823A publication Critical patent/JPS5640823A/en
Publication of JPS6053867B2 publication Critical patent/JPS6053867B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Abstract

PURPOSE:To obtain a negative type photoresist pattern of superior resolving power for production of LSIs, etc. by developing the photosensitive layer consisting of a polymer containing glycidyl methacrylate and o-quinonediazo compound within the specific temperature range after irradiation of ultraviolet rays. CONSTITUTION:A copolymer such as methyl methacrylate containing >=1% glycidyl methacrylate (GCM) and O-naphthoquinone diazide sulfonic acid ester (QDA) is coated on a silicon substrate. Next, it is prebaked for about 10min at 80 deg.C, after which ultraviolet rays are irradiated thereto and the substrate is immediately heat- treated at 70-130 deg.C. Thence, it is dipped in dioxane etc. and is developed, whereby the negative type resist patterns of superior resolution of about 1mum are obtained. This substrate is treated with an etchant of hydrofluoric acid system and is used for production of elements such as LSIs and magnetic bulbs of high accuracy. The ketene produced by the decomposition of QDA insolubilizes by reacting with the epoxy groups in GCM through baking after the irradiation of ultraviolet rays, while the unradiated portions dissolve. In this way, the fine patterns are obtained with good accuracy.
JP11605579A 1979-09-12 1979-09-12 Method of forming negative photoresist pattern Expired JPS6053867B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11605579A JPS6053867B2 (en) 1979-09-12 1979-09-12 Method of forming negative photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11605579A JPS6053867B2 (en) 1979-09-12 1979-09-12 Method of forming negative photoresist pattern

Publications (2)

Publication Number Publication Date
JPS5640823A true JPS5640823A (en) 1981-04-17
JPS6053867B2 JPS6053867B2 (en) 1985-11-27

Family

ID=14677578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11605579A Expired JPS6053867B2 (en) 1979-09-12 1979-09-12 Method of forming negative photoresist pattern

Country Status (1)

Country Link
JP (1) JPS6053867B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115435A (en) * 1981-12-14 1983-07-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Formation of patterned photoresist
JPS5955431A (en) * 1982-09-24 1984-03-30 Fujitsu Ltd Method for forming positive resist pattern for far ultraviolet rays
EP0212482A2 (en) * 1985-08-12 1987-03-04 Hoechst Celanese Corporation Process for obtaining negative images from positive photoresists
JPH02973A (en) * 1988-03-15 1990-01-05 Sumitomo Chem Co Ltd Curable resin composition
JPH06206297A (en) * 1992-11-20 1994-07-26 Gerber Scient Prod Inc Pressplate making method by jet printer or scanning printer using sensitizer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115435A (en) * 1981-12-14 1983-07-09 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Formation of patterned photoresist
JPH0216911B2 (en) * 1981-12-14 1990-04-18 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5955431A (en) * 1982-09-24 1984-03-30 Fujitsu Ltd Method for forming positive resist pattern for far ultraviolet rays
EP0212482A2 (en) * 1985-08-12 1987-03-04 Hoechst Celanese Corporation Process for obtaining negative images from positive photoresists
JPH02973A (en) * 1988-03-15 1990-01-05 Sumitomo Chem Co Ltd Curable resin composition
JPH06206297A (en) * 1992-11-20 1994-07-26 Gerber Scient Prod Inc Pressplate making method by jet printer or scanning printer using sensitizer

Also Published As

Publication number Publication date
JPS6053867B2 (en) 1985-11-27

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