JPS5664337A - Radiation resist material and radiation resist pattern forming method - Google Patents

Radiation resist material and radiation resist pattern forming method

Info

Publication number
JPS5664337A
JPS5664337A JP14022679A JP14022679A JPS5664337A JP S5664337 A JPS5664337 A JP S5664337A JP 14022679 A JP14022679 A JP 14022679A JP 14022679 A JP14022679 A JP 14022679A JP S5664337 A JPS5664337 A JP S5664337A
Authority
JP
Japan
Prior art keywords
radiation resist
forming method
pattern forming
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14022679A
Other languages
Japanese (ja)
Inventor
Kunio Hibino
Kenichi Takeyama
Takakatsu Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14022679A priority Critical patent/JPS5664337A/en
Publication of JPS5664337A publication Critical patent/JPS5664337A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a super minute pattern of high resolution and sensitivity with high reproducibility by applying a copolymer of methacrylic acid and methyl methacrylate to a substrate and irradiating it after heat treatment.
CONSTITUTION: A copolymer consisting of 95W85mol% methyl methacrylate and 5W15mol% methacrylic acid and having 30,000W100,000wt. average mol.wt. is dissolved in a solvent such as methyl cellosolve acetate, and this soln. is applied to a substrate to form a film. This film is then heat treated, irradiated to form a predetermined latent image, and developed by dipping in a developer such as methyl ethyl ketone or ethyl acetate. Thus, a resist sectional form having a vertical wall surface can be obtd. with high resolution (0.3W0.8μ), high sensitivity (7×10-6W 3×10-5C/cm2) and high reproducibility.
COPYRIGHT: (C)1981,JPO&Japio
JP14022679A 1979-10-29 1979-10-29 Radiation resist material and radiation resist pattern forming method Pending JPS5664337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14022679A JPS5664337A (en) 1979-10-29 1979-10-29 Radiation resist material and radiation resist pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14022679A JPS5664337A (en) 1979-10-29 1979-10-29 Radiation resist material and radiation resist pattern forming method

Publications (1)

Publication Number Publication Date
JPS5664337A true JPS5664337A (en) 1981-06-01

Family

ID=15263833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14022679A Pending JPS5664337A (en) 1979-10-29 1979-10-29 Radiation resist material and radiation resist pattern forming method

Country Status (1)

Country Link
JP (1) JPS5664337A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116532A (en) * 1981-12-29 1983-07-11 Fujitsu Ltd Pattern formation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526203A (en) * 1975-06-30 1977-01-18 Ibm Method of forming positive resist image
JPS54133322A (en) * 1978-04-07 1979-10-17 Cho Lsi Gijutsu Kenkyu Kumiai Positive type ionizing radiation sensitive resist

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526203A (en) * 1975-06-30 1977-01-18 Ibm Method of forming positive resist image
JPS54133322A (en) * 1978-04-07 1979-10-17 Cho Lsi Gijutsu Kenkyu Kumiai Positive type ionizing radiation sensitive resist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116532A (en) * 1981-12-29 1983-07-11 Fujitsu Ltd Pattern formation
JPH0262859B2 (en) * 1981-12-29 1990-12-26 Fujitsu Ltd

Similar Documents

Publication Publication Date Title
JPS5754317A (en) Method and device for forming pattern
JPS537231A (en) Image formation
DE3541451A1 (en) Process for producing a negative image
JPS5466829A (en) Pattern formation materil
JPS561536A (en) Manufacture of resist pattern
JPS5664337A (en) Radiation resist material and radiation resist pattern forming method
JPS5276600A (en) Solidifying method with cement of radioactive liquid waste
JPS5934296B2 (en) Electron beam resist and its usage
JPS5466776A (en) Fine pattern forming method
JPS5427369A (en) Pattern formation method
JPS55156941A (en) Micropattern forming method
JPS55163841A (en) Method for electron beam exposure
JPS55134847A (en) Manufacture of resist image
DE3020976C2 (en) Process for increasing the processing latitude of photohardenable recording materials
JPS5552051A (en) Radiation resist and formation method for radiation resist pattern
JPS5654440A (en) Photosensitive lithographic material and plate making method
JPS5353314A (en) Sensitive high polymer composition and picture imae forming method usingsaid composition
JPS56114943A (en) Negative type resist material for electron beam
JPS556341A (en) Developing method for electron beam resist
JPS56100417A (en) Forming method for resist pattern
JPS5669625A (en) Minute pattern forming method
JPS558013A (en) Semiconductor device manufacturing method
JPS5632143A (en) Manufacture of photomask
JPS57151310A (en) Decorating method
JPS5516317A (en) Method for forming fluorescent screen of color picture tube