JPS57128031A - Exposure mask - Google Patents
Exposure maskInfo
- Publication number
- JPS57128031A JPS57128031A JP1269381A JP1269381A JPS57128031A JP S57128031 A JPS57128031 A JP S57128031A JP 1269381 A JP1269381 A JP 1269381A JP 1269381 A JP1269381 A JP 1269381A JP S57128031 A JPS57128031 A JP S57128031A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ray
- mask
- subsequently
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000010894 electron beam technology Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a mask having extremely excellent resolution by employing a diamond-shaped carbon film as the mask substrate of an X-ray or as a part of the substrate, thereby enhancing the permeability of the X-ray. CONSTITUTION:A nitrided Si film 12 is accumulated on one side surface of an Si wafer 11. Then, a photoresist is covered on the film, and an Si selecting back etching window pattern 13 is formed. Subsequently, the film 12 is opened with a window 14. Thereafter, a diamond-shaped carbon film is formed on the remaining Si surface. Then, a positive type electron beam resist is covered on the film, thereby forming a resist film 15. Subsequently, a test pattern is drawn by an electron beam drawing device, and is then developed. Thereafter, metallic Ti is deposited on the film, Au 16 is deposited on the Ti. Then, it is lifted off, thereby obtaining the metallic pattern of an X-ray absorption layer. Subsequently, the Si of the part opened with the window is removed by back etching, thereby obtaining an exposure mask. In this manner, an X-ray mask having extremely high contrast can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1269381A JPS57128031A (en) | 1981-01-30 | 1981-01-30 | Exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1269381A JPS57128031A (en) | 1981-01-30 | 1981-01-30 | Exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57128031A true JPS57128031A (en) | 1982-08-09 |
Family
ID=11812450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1269381A Pending JPS57128031A (en) | 1981-01-30 | 1981-01-30 | Exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128031A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58204534A (en) * | 1982-05-24 | 1983-11-29 | Hitachi Ltd | Mask for x-ray lithography |
| JPS62244132A (en) * | 1986-04-17 | 1987-10-24 | Sanyo Electric Co Ltd | Manufacture of mask for short wave length lithography |
| JPS63254727A (en) * | 1987-04-10 | 1988-10-21 | Nissin Electric Co Ltd | X-ray exposure mask and manufacture thereof |
| JPS63263500A (en) * | 1987-04-22 | 1988-10-31 | 株式会社ニコン | Sample vessel for microscope observation |
| JPS63298200A (en) * | 1987-05-29 | 1988-12-05 | Nikon Corp | Specimen vessel for soft roentgen ray microscope observation |
| JPH03273611A (en) * | 1990-03-23 | 1991-12-04 | Nec Corp | Mask for x-ray lithography and manufacture thereof |
| US5111491A (en) * | 1990-08-28 | 1992-05-05 | Sumitomo Electric Industries, Ltd. | X-ray lithography mask and method for producing same |
| KR100725670B1 (en) * | 1999-11-10 | 2007-06-08 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method of producing diamond film for lithography |
| JP2014225498A (en) * | 2013-05-15 | 2014-12-04 | 凸版印刷株式会社 | Reflective mask blank and reflective mask |
-
1981
- 1981-01-30 JP JP1269381A patent/JPS57128031A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58204534A (en) * | 1982-05-24 | 1983-11-29 | Hitachi Ltd | Mask for x-ray lithography |
| JPS62244132A (en) * | 1986-04-17 | 1987-10-24 | Sanyo Electric Co Ltd | Manufacture of mask for short wave length lithography |
| JPS63254727A (en) * | 1987-04-10 | 1988-10-21 | Nissin Electric Co Ltd | X-ray exposure mask and manufacture thereof |
| JPS63263500A (en) * | 1987-04-22 | 1988-10-31 | 株式会社ニコン | Sample vessel for microscope observation |
| JPS63298200A (en) * | 1987-05-29 | 1988-12-05 | Nikon Corp | Specimen vessel for soft roentgen ray microscope observation |
| JPH03273611A (en) * | 1990-03-23 | 1991-12-04 | Nec Corp | Mask for x-ray lithography and manufacture thereof |
| US5111491A (en) * | 1990-08-28 | 1992-05-05 | Sumitomo Electric Industries, Ltd. | X-ray lithography mask and method for producing same |
| KR100725670B1 (en) * | 1999-11-10 | 2007-06-08 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method of producing diamond film for lithography |
| JP2014225498A (en) * | 2013-05-15 | 2014-12-04 | 凸版印刷株式会社 | Reflective mask blank and reflective mask |
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