JPS62244132A - Manufacture of mask for short wave length lithography - Google Patents
Manufacture of mask for short wave length lithographyInfo
- Publication number
- JPS62244132A JPS62244132A JP61088902A JP8890286A JPS62244132A JP S62244132 A JPS62244132 A JP S62244132A JP 61088902 A JP61088902 A JP 61088902A JP 8890286 A JP8890286 A JP 8890286A JP S62244132 A JPS62244132 A JP S62244132A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- mask
- base
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001459 lithography Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 12
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 208000001490 Dengue Diseases 0.000 description 1
- 206010012310 Dengue fever Diseases 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 208000025729 dengue disease Diseases 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（イ） 産業上の利用分野
本発明はＸ線、イオンビーム、或いは電子ビームなどの
短波長の放射線を用いてパターンを露光する短波長リソ
グラフィ用マスクの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method of manufacturing a mask for short wavelength lithography in which a pattern is exposed using short wavelength radiation such as X-rays, ion beams, or electron beams.
（ロ） 従来の技術
リソグラフィ技術は半導体装置の製造には不可欠である
が、紫外線を用いる現行の方法ではその波長の関係から
３μ以下のパターンは描けない。(b) Conventional technology Although lithography technology is indispensable for manufacturing semiconductor devices, the current method using ultraviolet rays cannot draw patterns with a diameter of 3 μm or less due to the wavelength of the ultraviolet rays.
一方、２５６にメモリや１Ｍメモリの超ＬＳＩの分野に
於ては１μ若しくはそれ以下のパターン精度が要求され
る。従って斯かる超ＬＳＩの製造には紫外線より波長の
短いＸ線、イオンビーム或いは電子ビームなどを用いた
リソグラフィ技術が採゛用されつつある。On the other hand, in the field of VLSI such as 256 memory and 1M memory, pattern accuracy of 1 μm or less is required. Therefore, lithography techniques using X-rays, ion beams, electron beams, etc., which have wavelengths shorter than ultraviolet rays, are being used to manufacture such VLSIs.
Ｘ線リソグラフィに用いるマスクとしては、Ｊａｐａｎ
ｅｓ＠Ｖａｃｕｕｍ ５ｏｃｉｅｔｙ ｆｆｅｃｈｎｏ
ｌｏｇｙ Ｂ ４ （１）Ｊａｎ／Ｆｅｂ、 １９８
Ｂ 、Ｐ２２１〜２２５’Ｈｉｇｈ Ｆｌａｔｎｅｓｓ
Ｍａｓｋ ｆｏｒ ５ｔｅｐ ａｎｄ Ｒｅｐｅａｔ
Ｘ ｒａｙ Ｌｉｔｈｏｇｒａｐｈｙ」に記載きれてい
るような断面ブリッジ型のマスクが提案されている（第
５図参照）。As a mask used for X-ray lithography, Japan
es@Vacuum 5ociety ffechno
logic B 4 (1) Jan/Feb, 198
B, P221-225'High Flatness
Mask for 5tep and Repeat
A cross-sectional bridge type mask has been proposed as described in "X-ray Lithography" (see FIG. 5).
この第５図に於て、（１）は支持台を構成しているシリ
コン基盤、（２）は基盤（１）の−表面に設けられた窒
化シリコン膜、（３）は該窒化シリコン膜（２）表面に
形成された金などの重金属から成るマスクパターンで、
露光用のＸ線を吸収する。（４）はこのマスクパターン
（３）を覆った窒化ンリコンから成る保護膜で、重金属
パターンにＸ線を照射した時に発生する二次電子を捕獲
する為のものである。（５）はシリコン基盤（１）の裏
面の窒化シリコン膜で、基盤（１）を裏面から選択エツ
チングしてブリッジ型にする際のマスクとして用いられ
る。In FIG. 5, (1) is a silicon substrate constituting the support base, (2) is a silicon nitride film provided on the -surface of the substrate (1), and (3) is the silicon nitride film ( 2) A mask pattern made of heavy metals such as gold formed on the surface,
Absorbs X-rays for exposure. (4) is a protective film made of silicon nitride that covers this mask pattern (3), and is used to capture secondary electrons generated when the heavy metal pattern is irradiated with X-rays. (5) is a silicon nitride film on the back surface of the silicon substrate (1), which is used as a mask when the substrate (1) is selectively etched from the back surface to form a bridge type.
（ハ）発明が解決しようとした問題点
第５図に示したリソグラフィ用マスクは、窒化シリコン
膜形成工程が多く、コスト的に問題があり、また性能面
ではＸ２１が透過する個所での窒化シリコン膜が厚いの
で、コントラストが悪い、と云う問題があった。(c) Problems that the invention sought to solve The lithography mask shown in FIG. Since the film was thick, there was a problem of poor contrast.
〈二〉 問題点を解決する為の手段
本発明は斯る問題点を解決することの出来るマスクの製
造方法を提供するもので、
シリコン基盤の表裏両面に窒化シリコン膜を成長せしめ
る工程、
上記基盤の裏面の窒化シリコン膜をマスクパターンの大
きさに略該当せしめて選択的にエツチング除去して窓を
開ける工程、
この窓を介して上記シリコン基盤をエツチングしてシリ
コン基盤の表面側の窒化シリコン膜の背面を露出させる
工程、
この露出した窒化シリコン膜の背面に重金属にて所定の
マスクパターンを描く工程、から成っている。<2> Means for solving the problem The present invention provides a method for manufacturing a mask that can solve the problem, and includes a step of growing a silicon nitride film on both the front and back surfaces of a silicon substrate; A process of selectively etching and removing the silicon nitride film on the back side of the mask pattern so that it corresponds to the size of the mask pattern to open a window, and etching the silicon base through this window to form a silicon nitride film on the front side of the silicon base. The process consists of a step of exposing the back surface of the silicon nitride film, and a step of drawing a predetermined mask pattern using heavy metal on the exposed back surface of the silicon nitride film.
（ホ）作用
本発明は窒化シリコン膜の形成工程が少なく、また本発
明に依って作られたりソグラフィ用マスクはＸ線透過個
所の窒化シリコン膜の膜厚が薄いので、ハイコントラス
トが期待出来る。(E) Function The present invention requires fewer steps for forming the silicon nitride film, and the lithography mask made according to the present invention has a thin silicon nitride film at the X-ray transmitting portions, so high contrast can be expected.
（へ） 実施例 第１図〜第４図に本発明方法を工程順に示す。(f) Examples The method of the present invention is shown in the order of steps in FIGS. 1 to 4.
本発明の第１の工程は一支持台を構成する厚み約４００
μのシリコン基盤（１０）の表裏両面に１μ程度の厚み
の窒化シリコン膜（１１）（１２）をプラズマＣＶＤ法
などに依って成長させるところにある。The first step of the present invention is to form a support base with a thickness of approximately 400 mm.
Silicon nitride films (11) and (12) with a thickness of about 1 μm are grown on both the front and back surfaces of a μ silicon substrate (10) by plasma CVD or the like.
第２の工程は、第２図に示すように、上記基盤（１０）
の裏面の窒化シリコン膜（１２）を選択的にエツチング
除去して窓（１３）を開けるところにある。このエツチ
ング工程は熱燐酸を用いた公知の手法で行なわれる。尚
、この窓（１３）の差し渡しは少なくとも１個の電子を
構成する半導体チップの大きさ以上である必要があり、
望ましくは半導体ウェファ全面に該当する大きさである
。In the second step, as shown in FIG.
The silicon nitride film (12) on the back surface of the substrate is selectively etched away to open a window (13). This etching step is carried out using a known method using hot phosphoric acid. Note that the width of this window (13) must be at least the size of a semiconductor chip constituting one electron,
Preferably, the size corresponds to the entire surface of the semiconductor wafer.
第３の工程は、シリコン基盤（１０）裏面に残存許せた
窒化シリコン膜（１２）をマスクとして窓（１３）から
露出した基盤（１０）をエツチング工程し、断面形状を
ブリッジ型にするところにある（第３図）、このエツチ
ング工程は基盤シリコン（１０）が完全に除去きれて該
基盤（１０）表面の窒化シリコン膜（１１）の背面が露
出するまで行なわれる。またこの工程はＫ ＯＨ溶液を
用いた通常のエツチング方法が採用される。In the third step, the silicon nitride film (12) remaining on the back surface of the silicon substrate (10) is used as a mask to etch the substrate (10) exposed through the window (13) to make the cross-sectional shape bridge-shaped. This etching step (FIG. 3) is carried out until the base silicon (10) is completely removed and the back surface of the silicon nitride film (11) on the surface of the base (10) is exposed. Further, in this step, a normal etching method using a KOH solution is employed.
本発明の最終工程は、この第３工程を経て得られたシリ
コン基盤（１０）のエツチング穴（１４）を介して露出
した窒化シリコン膜（１２）の背面に金やタンタルなど
の重金属にて所定のマスクパターン（１５）を形成する
ところにある（第４図）。このマスクパターン（１５）
は重金属の電気メッキとリフトオフ技術に依って、或い
は重金属の蒸着、スパッタとドライエ・／デング技術に
依って１μ程度の厚みで形成される。In the final step of the present invention, a heavy metal such as gold or tantalum is coated on the back surface of the silicon nitride film (12) exposed through the etching hole (14) of the silicon substrate (10) obtained through the third step. The mask pattern (15) is formed (FIG. 4). This mask pattern (15)
is formed to a thickness of about 1 μm by heavy metal electroplating and lift-off techniques, or by heavy metal evaporation, sputtering, and dry etching/dengue techniques.
このようにして得られたリソグラフィ用マスクの表面側
に露光すべき半導体ウェファを密着若しくは近接せしめ
、裏面側からＸ線を照射すると、ＸＩｌは１μ厚の窒化
シリコン膜を透通ずるが、重金属から成るマスクパター
ン及び４００μ厚のシリコン基盤は透過せず、半導体ウ
ェファ表面にマスクパターンが露光きれる。When a semiconductor wafer to be exposed is brought into close contact with or in close proximity to the front side of the lithography mask obtained in this way and X-rays are irradiated from the back side, XIl passes through a 1μ thick silicon nitride film, but it is composed of heavy metals. The mask pattern and the 400 μm thick silicon substrate are not transmitted, and the mask pattern is completely exposed on the semiconductor wafer surface.
尚、１μ厚の窒化シリコン膜はＸ線のみならず、電子ビ
ームやイオンビームなどの短波長の放射線ビームを透過
するので、ｘｍの代わりにこれらの電子ビームやイオン
ビームも同様に用いることが出来る。Note that a 1 μ thick silicon nitride film transmits not only X-rays but also short-wavelength radiation beams such as electron beams and ion beams, so these electron beams and ion beams can be used in place of xm as well. .
（ト） 発明の効果
本発明は以上の説明から明らかな如く、窒化シリコン膜
の成長はｍ−［程のみであるので、工程面で簡略化出来
て製造コストの低減が図れる。また基盤の裏面側からＸ
線照射することに依って、二次電子は窒化シリコン膜で
捕獲されると共に、Ｘ線が透過する個所の窒化シリコン
膜の厚みは薄いのでコントラストの低下はない。(G) Effects of the Invention As is clear from the above description, in the present invention, the silicon nitride film grows only by about m-[, so that the process can be simplified and the manufacturing cost can be reduced. Also, from the back side of the board
By irradiating the X-rays, the secondary electrons are captured by the silicon nitride film, and since the thickness of the silicon nitride film is thin at the portion through which the X-rays pass, there is no reduction in contrast.
第１図乃至第４図は本発明を工程順に示した断面図、第
５図は現存するマスクの断面図である。
（１）（１Ｇ）・・・シリコン基盤、
＜２ ）（４）（５）（１１）（１２）・・・窒化シリ
フン膜、（３）（１５）・・・マスクパターン。1 to 4 are cross-sectional views showing the present invention in the order of steps, and FIG. 5 is a cross-sectional view of an existing mask. (1) (1G)... Silicon base, <2) (4) (5) (11) (12)... Silicon nitride film, (3) (15)... Mask pattern.
Claims (6)
ーンを露光する短波長リソグラフィ用マスクの製造方法
； シリコン基盤の表裏両面に窒化シリコン膜を成長せしめ
る工程、 上記基盤の裏面の窒化シリコン膜を少なくともマスクパ
ターンの大きさ以上に該当せしめて選択的にエッチング
除去して窓を開ける工程、 この窓を介して上記シリコン基盤をエッチングしてシリ
コン基盤の表面側の窒化シリコン膜の背面を露出させる
工程、 この露出した窒化シリコン膜の背面に重金属にて所定の
マスクパターンを描く工程。(1) A method for manufacturing a short-wavelength lithography mask that exposes a pattern using short-wavelength radiation, which comprises the following steps: growing a silicon nitride film on both the front and back surfaces of a silicon substrate; and silicon nitride on the back surface of the substrate. A step of selectively etching away the film to a size larger than the mask pattern to open a window; etching the silicon substrate through the window to expose the back side of the silicon nitride film on the surface side of the silicon substrate; A step of drawing a predetermined mask pattern on the back surface of this exposed silicon nitride film using heavy metal.
た特許請求の範囲第１項記載の短波長リソグラフィ用マ
スクの製造方法。(2) The method for manufacturing a mask for short wavelength lithography according to claim 1, wherein the short wavelength radiation is an X-ray.
特徴とした特許請求の範囲第１項記載の短波長リソグラ
フィ用マスクの製造方法。(3) The method for manufacturing a mask for short wavelength lithography according to claim 1, wherein the short wavelength radiation is an ion beam.
徴とした特許請求の範囲第１項記載の短波長リソグラフ
ィ用マスクの製造方法。(4) The method for manufacturing a mask for short wavelength lithography according to claim 1, wherein the short wavelength radiation is an electron beam.
の範囲第１項、第２項、第３項、又は第４項記載の短波
長リソグラフィ用マスクの製造方法。(5) The method for manufacturing a mask for short wavelength lithography according to claim 1, 2, 3, or 4, wherein the heavy metal is gold.
許請求の範囲第１項、第２項、第３項、又は第４項記載
の短波長リソグラフィ用マスクの製造方法。(6) The method for manufacturing a mask for short wavelength lithography according to claim 1, 2, 3, or 4, wherein the heavy metal is tantalum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61088902A JPS62244132A (en) | 1986-04-17 | 1986-04-17 | Manufacture of mask for short wave length lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61088902A JPS62244132A (en) | 1986-04-17 | 1986-04-17 | Manufacture of mask for short wave length lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62244132A true JPS62244132A (en) | 1987-10-24 |
Family
ID=13955882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61088902A Pending JPS62244132A (en) | 1986-04-17 | 1986-04-17 | Manufacture of mask for short wave length lithography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62244132A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169674A (en) * | 1993-12-13 | 1995-07-04 | Nec Corp | Eb part batch aperture and manufacture of x-ray mask |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53104176A (en) * | 1977-02-24 | 1978-09-11 | Oki Electric Ind Co Ltd | Mask for x-ray exposure |
| JPS57128031A (en) * | 1981-01-30 | 1982-08-09 | Nippon Telegr & Teleph Corp <Ntt> | Exposure mask |
-
1986
- 1986-04-17 JP JP61088902A patent/JPS62244132A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53104176A (en) * | 1977-02-24 | 1978-09-11 | Oki Electric Ind Co Ltd | Mask for x-ray exposure |
| JPS57128031A (en) * | 1981-01-30 | 1982-08-09 | Nippon Telegr & Teleph Corp <Ntt> | Exposure mask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169674A (en) * | 1993-12-13 | 1995-07-04 | Nec Corp | Eb part batch aperture and manufacture of x-ray mask |
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