JPH0416009B2 - - Google Patents
Info
- Publication number
- JPH0416009B2 JPH0416009B2 JP7046081A JP7046081A JPH0416009B2 JP H0416009 B2 JPH0416009 B2 JP H0416009B2 JP 7046081 A JP7046081 A JP 7046081A JP 7046081 A JP7046081 A JP 7046081A JP H0416009 B2 JPH0416009 B2 JP H0416009B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray
- thin film
- absorber pattern
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000006096 absorbing agent Substances 0.000 claims description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 19
- 229910052750 molybdenum Inorganic materials 0.000 claims description 19
- 239000011733 molybdenum Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Description
【発明の詳細な説明】
本発明はＸ線露光用マスクの製造方法に関する
ものである。Ｘ線マスクは従来第１図に示す工程
で製造されている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an X-ray exposure mask. X-ray masks have conventionally been manufactured by the process shown in FIG.
すなわち、
(1) マスク支持体１、例えばシリコン単結晶基板
の上にＸ線透過支持体層２、例えばシリコン窒
化膜を形成する。 That is, (1) an X-ray transparent support layer 2, such as a silicon nitride film, is formed on a mask support 1, such as a silicon single crystal substrate.
(2) その上に50〜1000Å厚のチタン薄膜３を被着
し、さらにその上につづいて厚さ4000〜15000
Åの金または白金などのＸ線吸収体層４を被着
する。(2) A titanium thin film 3 with a thickness of 50 to 1000 Å is deposited on top of that, and then a titanium thin film 3 with a thickness of 4000 to 15000 Å is deposited on top of that.
An X-ray absorber layer 4, such as gold or platinum, is deposited.
(3) その上に所望のパターンのエツチングマスク
５を形成する。(3) An etching mask 5 with a desired pattern is formed thereon.
(4) そのエツチングマスク５をマスクとしてイオ
ンエツチング等によりＸ線吸収体層４をエツチ
ングし、吸収体パターン６を形成する。次に、
イオンエツチング或いはスパツタエツチング等
によりこの吸収体パターン６をマスクとしてチ
タン薄膜３をエツチングし、吸収体パターン６
下以外のチタン膜３を除去する。(4) Using the etching mask 5 as a mask, the X-ray absorber layer 4 is etched by ion etching or the like to form an absorber pattern 6. next,
Using this absorber pattern 6 as a mask, the titanium thin film 3 is etched by ion etching or sputter etching, and the absorber pattern 6 is etched.
The titanium film 3 other than the bottom part is removed.
(5) マスク支持体１の一部分に開口７を設け、残
りの部分を補強支持梁８とする。(5) An opening 7 is provided in a part of the mask support 1, and the remaining part is used as a reinforcing support beam 8.
以上の工程でＸ線露光用マスクが製造されるが
(4)の工程のチタン薄膜３をエツチング除去する際
に吸収体パターン６もエツチングされるので、Ｘ
線露光用マスクにおいて望ましい矩形状断面をも
つ吸収体パターン６を得るのは難しい。一方チタ
ン薄膜３の除去を湿式化学エツチングで行なう方
法は、吸収体パターン６下もエツチングしてしま
うので、微細なパターンを有するＸ線露光用マス
クの製造には不向きである。 An X-ray exposure mask is manufactured through the above process.
Since the absorber pattern 6 is also etched when the titanium thin film 3 is etched away in step (4),
It is difficult to obtain an absorber pattern 6 with a desirable rectangular cross section in a mask for line exposure. On the other hand, the method of removing the titanium thin film 3 by wet chemical etching also etches the bottom of the absorber pattern 6, so it is not suitable for manufacturing an X-ray exposure mask having a fine pattern.
本発明の目的は、矩形状断面の吸収体パターン
をもつ良好なＸ線露光用マスクを歩留りよく製造
する方法を提供することにある。 An object of the present invention is to provide a method for manufacturing a good X-ray exposure mask having an absorber pattern with a rectangular cross section with a high yield.
すなわち、本発明はマスク支持体上のＸ線透過
支持体層上にモリブデンの薄膜を被着する工程と
そのモリブデン薄膜上にＸ線吸収体パターンを形
成する工程と、そのＸ線吸収体パターンをマスク
として前記モリブデン薄膜をエツチング除去する
工程を含むＸ線露光用マスクの製造方法である。 That is, the present invention includes a step of depositing a thin molybdenum film on an X-ray transparent support layer on a mask support, a step of forming an X-ray absorber pattern on the molybdenum thin film, and a step of forming the X-ray absorber pattern. This is a method for manufacturing an X-ray exposure mask, which includes a step of etching away the molybdenum thin film as a mask.
以下、本発明のＸ線露光用マスクの製造方法に
ついて実施例を用いて説明する。 Hereinafter, the method for manufacturing an X-ray exposure mask of the present invention will be explained using Examples.
実施例
第２図は本発明の一実施例を示す工程断面図で
ある。Embodiment FIG. 2 is a process sectional view showing an embodiment of the present invention.
(1) マスク支持体１、例えばシリコン単結晶基板
の上にＸ線透過支持体層２、例えばシリコン窒
化膜を形成する。(1) An X-ray transparent support layer 2, such as a silicon nitride film, is formed on a mask support 1, such as a silicon single crystal substrate.
(2) その上に50〜2000Å厚のモリブデン薄膜２１
を被着し、さらにその上につづいて厚さ4000〜
15000Åの金または白金などのＸ線吸収体層４
を被着する。(2) On top of that is a thin molybdenum film 21 with a thickness of 50 to 2000 Å.
Then, on top of that, a thickness of 4000~
X-ray absorber layer 4 of 15000 Å gold or platinum
be coated with.
(3) さらに、その上にエツチングマスク５を所望
のパターンに形成する。(3) Furthermore, an etching mask 5 is formed in a desired pattern thereon.
(4) そのエツチングマスク５をマスクとしてイオ
ンエツチング等によりＸ線吸収体層４をエツチ
ングし、吸収体パターン２２を形成する。(4) Using the etching mask 5 as a mask, the X-ray absorber layer 4 is etched by ion etching or the like to form an absorber pattern 22.
(5) その吸収体パターン２２をマスクとしてモリ
ブデン薄膜２１に酸素プラズマ或いは酸素イオ
ン等を照射することにより、照射された部分の
モリブデン膜のみをAzデベロツパー（米国シ
ツブレー社）等のアルカリ溶液に対して著しく
溶解性を向上せしめることにより、吸収体パタ
ーン２２下以外のモリブデン薄膜２１のみを選
択的に除去する。(5) By irradiating the molybdenum thin film 21 with oxygen plasma or oxygen ions using the absorber pattern 22 as a mask, only the irradiated portion of the molybdenum film is exposed to an alkaline solution such as Az Developer (Sitblay, USA). By significantly improving the solubility, only the molybdenum thin film 21 except under the absorber pattern 22 is selectively removed.
(6) マスク支持体１の一部分に開口７を設け、残
りの部分を補強支持梁３とする。(6) An opening 7 is provided in a part of the mask support 1, and the remaining part is used as a reinforcing support beam 3.
以上説明したように、本発明によれば吸収体パ
ターン２２とＸ線透過支持体層２の間の薄膜２１
をモリブデンにすることにより形成される吸収体
パターン２２を損傷することなく、モリブデン膜
２１のみを除去できる。また、吸収体パターン２
２下以外のモリブデン膜２１のみを酸化させるこ
とにより、吸収体パターン２２とその下のモリブ
デン膜２１とのエツチング速度差を大きくするこ
とができるので、微細な吸収体パターン２２を有
するＸ線露光用マスクの製造に充分適用できる。 As explained above, according to the present invention, the thin film 21 between the absorber pattern 22 and the X-ray transparent support layer 2
By using molybdenum as molybdenum, only the molybdenum film 21 can be removed without damaging the absorber pattern 22 formed. Also, absorber pattern 2
By oxidizing only the molybdenum film 21 other than the one under 2, it is possible to increase the difference in etching rate between the absorber pattern 22 and the molybdenum film 21 below it. It is fully applicable to mask manufacturing.
なお、上記の説明では吸収体パターンをエツチ
ング法で形成する方法についてのみ説明したが、
電気めつき法で吸収体パターンを形成する場合に
も吸収体パターンとＸ線透過支持体層の間の薄膜
としてモリブデンを用いることにより、同様に良
好な効果が得られる。 In addition, in the above explanation, only the method of forming the absorber pattern by the etching method was explained.
Even when an absorber pattern is formed by electroplating, similar good effects can be obtained by using molybdenum as a thin film between the absorber pattern and the X-ray transparent support layer.
第１図は従来のＸ線露光用マスクの製造工程を
示す断面図で、(1)はマスク支持体上にＸ線透過支
持体層を形成した状態、(2)はチタン薄膜を被着し
さらに、その上にＸ線吸収体層を被着した状態、
(3)はその上にエツチングマスクを形成した状態、
(4)は吸収パターンを形成し、その吸収体パターン
下以外のチタン薄膜を除去した状態、(5)はマスク
支持体の一部分に開口を設けた状態を表わす。第
２図は本発明の一実施例を説明するための断面図
で、(1)はマスク支持体上にＸ線透過支持体層を形
成した状態、(2)はモリブデン薄膜を被着し、さら
に、その上に金または白金膜を被着した状態(3)は
エツチングマスクを形成した状態、(4)は吸収体パ
ターンを形成した状態、(5)はその吸収体パターン
下以外のモリブデン薄膜を除去した状態、(6)はマ
スク支持体の一部分に開口を設けた状態を表わ
す。
図において、１はマスク支持体、２はＸ線透過
支持体層、３はチタン薄膜、４はＸ線吸収体層、
５はエツチングマスク、６，２２は吸収体パター
ン、７は開口、８は補強支持梁、２１はモリブデ
ン薄膜を表わす。
Figure 1 is a cross-sectional view showing the manufacturing process of a conventional X-ray exposure mask, in which (1) shows an X-ray transparent support layer formed on a mask support, and (2) shows a state in which a titanium thin film is coated. Furthermore, a state in which an X-ray absorber layer is applied thereon,
(3) is the state with an etching mask formed on it;
(4) represents a state in which an absorption pattern is formed and the titanium thin film except under the absorber pattern is removed, and (5) represents a state in which an opening is provided in a portion of the mask support. FIG. 2 is a cross-sectional view for explaining one embodiment of the present invention, (1) shows a state in which an X-ray transparent support layer is formed on a mask support, (2) shows a state in which a molybdenum thin film is coated, Furthermore, (3) is a state in which a gold or platinum film is deposited on top of the etching mask, (4) is a state in which an absorber pattern is formed, and (5) is a state in which a thin molybdenum film is formed except under the absorber pattern. (6) shows a state in which an opening is provided in a part of the mask support. In the figure, 1 is a mask support, 2 is an X-ray transparent support layer, 3 is a titanium thin film, 4 is an X-ray absorber layer,
5 is an etching mask, 6 and 22 are absorber patterns, 7 is an opening, 8 is a reinforcing support beam, and 21 is a molybdenum thin film.
Claims (1)
ブデンの薄膜を被着する工程と、そのモリブデン
薄膜上にＸ線吸収体パターンを形成する工程と、
そのＸ線吸収体パターンをマスクとして前記モリ
ブデン薄膜をエツチング除去する工程を含むこと
を特徴とするＸ線露光用マスクの製造方法。1. A step of depositing a molybdenum thin film on the X-ray transparent support layer on the mask support, and a step of forming an X-ray absorber pattern on the molybdenum thin film.
A method for manufacturing an X-ray exposure mask, comprising the step of etching away the molybdenum thin film using the X-ray absorber pattern as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046081A JPS57185436A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046081A JPS57185436A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57185436A JPS57185436A (en) | 1982-11-15 |
| JPH0416009B2 true JPH0416009B2 (en) | 1992-03-19 |
Family
ID=13432145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7046081A Granted JPS57185436A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57185436A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4708919A (en) * | 1985-08-02 | 1987-11-24 | Micronix Corporation | Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure |
-
1981
- 1981-05-11 JP JP7046081A patent/JPS57185436A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57185436A (en) | 1982-11-15 |
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