JPH0160935B2 - - Google Patents
Info
- Publication number
- JPH0160935B2 JPH0160935B2 JP7046281A JP7046281A JPH0160935B2 JP H0160935 B2 JPH0160935 B2 JP H0160935B2 JP 7046281 A JP7046281 A JP 7046281A JP 7046281 A JP7046281 A JP 7046281A JP H0160935 B2 JPH0160935 B2 JP H0160935B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- spacer
- electroplating
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 37
- 125000006850 spacer group Chemical group 0.000 claims description 31
- 238000009713 electroplating Methods 0.000 claims description 18
- 239000006096 absorbing agent Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
本発明はＸ線露光用マスクの製造方法に関する
ものである。Ｘ線露光用マスクは、従来第１図に
示す工程で製造されている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an X-ray exposure mask. An X-ray exposure mask has conventionally been manufactured by the process shown in FIG.
すなわち、
(1) マスク支持体１、例えばシリコン単結晶基板
の上にＸ線透過支持体層２を形成する。 (1) An X-ray transparent support layer 2 is formed on a mask support 1, for example, a silicon single crystal substrate.
(2) そのＸ線透過支持体層２の上に電気めつき用
ベース薄膜３を被着する。(2) A base thin film 3 for electroplating is deposited on the X-ray transparent support layer 2.
(3) さらに、その上に電気めつき用スペーサ厚膜
４を被着し、そのスペーサ厚膜４にイオン照射
５を行なう。(3) Further, a thick spacer film 4 for electroplating is deposited thereon, and the thick spacer film 4 is irradiated with ions 5.
(4) イオン照射されたスペーサ厚膜４はエツチン
グされ、開口６が形成される。(4) The ion-irradiated spacer thick film 4 is etched to form an opening 6.
(5) ベース薄膜３を電極として電気めつきを行な
うことにより、Ｘ線吸収体パターン７を形成
し、しかる後、スペーサ厚膜４を除去する。(5) The X-ray absorber pattern 7 is formed by electroplating using the base thin film 3 as an electrode, and then the spacer thick film 4 is removed.
以上の工程によりＸ線露光用マスクの吸収体パ
ターンが形成される。その後、吸収体パターンの
下以外のベース薄膜３を除去し、マスク支持体１
の一部を除去することにより、Ｘ線露光用マスク
が完成する。 Through the above steps, an absorber pattern of an X-ray exposure mask is formed. After that, the base thin film 3 except under the absorber pattern is removed, and the mask support 1 is removed.
By removing a portion of the mask, an X-ray exposure mask is completed.
ところで、イオン照射によりスペーサ厚膜４に
開口６を形成するときに過度にエツチングを行な
うと、ベース薄膜３までスパツタされ、このスパ
ツタされた物質が、第２図のごとく、スペーサ厚
膜４の側壁に２１のように付着する。この付着さ
れた層２１は電気めつきの際に電極となるので、
電気めつきより形成される吸収体パターンは第３
図のごとく、開口の周辺に、もりあがり３１を発
生するという問題が生ずる。 By the way, if excessive etching is performed when forming the opening 6 in the spacer thick film 4 by ion irradiation, the base thin film 3 will be sputtered, and this sputtered material will spread onto the side walls of the spacer thick film 4 as shown in FIG. It is attached as shown in 21. This deposited layer 21 serves as an electrode during electroplating, so
The absorber pattern formed by electroplating is the third
As shown in the figure, a problem arises in that bulges 31 occur around the opening.
本発明の目的は、良好なＸ線露光用マスクを高
歩留りで製造する方法を提供することにある。 An object of the present invention is to provide a method for manufacturing a good X-ray exposure mask with high yield.
すなわち、本発明はＸ線透過支持体層上に電気
めつき用のベース膜を被着し、そのベース薄膜の
上に設けられたスペーサ厚膜の開口を通して電気
めつきにより前記ベース薄膜上にＸ線吸収体パタ
ーンを形成する工程を有するＸ線露光用マスクの
製造方法において前記ベース薄膜と前記スペーサ
厚膜の間に前記ベース薄膜よりイオン照射エツチ
ング速度の小さい物質からなる補助薄膜を設け、
この補助薄膜をストツパーとして前記スペーサ厚
膜の開口を設け、前記電気めつきの前にその開口
部の補助薄膜を除去する工程を含むＸ線露光用マ
スクの製造方法である。 That is, in the present invention, a base film for electroplating is deposited on an X-ray transparent support layer, and X is applied onto the base thin film by electroplating through the opening of a spacer thick film provided on the base thin film. A method for manufacturing an X-ray exposure mask comprising a step of forming a ray absorber pattern, wherein an auxiliary thin film made of a substance having a lower ion irradiation etching rate than the base thin film is provided between the base thin film and the spacer thick film;
This method of manufacturing an X-ray exposure mask includes the steps of providing an opening in the spacer thick film using the auxiliary thin film as a stopper, and removing the auxiliary thin film in the opening before the electroplating.
以下、本発明のＸ線露光用マスクの製造方法に
ついて実施例を用いて説明する。 Hereinafter, the method for manufacturing an X-ray exposure mask of the present invention will be explained using Examples.
第４図は本発明の一実施例を工程順に示す断面
図である。 FIG. 4 is a sectional view showing an embodiment of the present invention in the order of steps.
(1) マスク支持体１、例えばシリコン単結晶基板
の上にＸ線透過支持体層２、例えばシリコン窒
化膜を形成する。(1) An X-ray transparent support layer 2, such as a silicon nitride film, is formed on a mask support 1, such as a silicon single crystal substrate.
(2) その上に電気めつき用のベース薄膜３として
金膜を、さらにその上に補助薄膜４１としてク
ロム膜を被着する。(2) A gold film is deposited thereon as a base thin film 3 for electroplating, and a chromium film is further deposited thereon as an auxiliary thin film 41.
(3) さらに、その上に電気めつき用スペーサ厚膜
４としてポリイミド樹脂膜を形成し、その上に
エツチングマスクを形成した後、試料全面に酸
素イオンビーム照射５を行なう。(3) Further, a polyimide resin film is formed thereon as a spacer thick film 4 for electroplating, an etching mask is formed thereon, and then oxygen ion beam irradiation 5 is applied to the entire surface of the sample.
(4) 加速された酸素イオンに照射された部分のス
ペーサ厚膜４は、エツチングされ、開口６が形
成される。(4) The portion of the spacer thick film 4 irradiated with the accelerated oxygen ions is etched, and an opening 6 is formed.
(5) 開口６が形成されたスペーサ厚膜４をマスク
としてクロム膜４１を硝酸第２セリウムアンモ
ニウム系のエツチング液で除去し、ベース薄膜
３の金を部分的に露出せしめる。(5) Using the spacer thick film 4 in which the opening 6 is formed as a mask, the chromium film 41 is removed with an etching solution based on ceric ammonium nitrate to partially expose the gold of the base thin film 3.
(6) ベース薄膜３を電極として電気めつきを行な
うことによりＸ線吸収体パターン７を形成し、
しかる後、スペーサ厚膜４を除去する。(6) Form the X-ray absorber pattern 7 by electroplating using the base thin film 3 as an electrode;
After that, the spacer thick film 4 is removed.
その後、補助薄膜４１を除去すれば、通常の製
造工程で得られるものと同じＸ線露光用マスクが
得られる。補助薄膜として用いたクロムのエツチ
ング速度は、ベース薄膜である金のエツチング速
度より、はるかに小さいので、同じオーバーエツ
チング時間では、スペーサ厚膜の開口に付着する
クロムの量は、従来の場合に比べると、はるかに
少ない。したがつて、電気めつきにより吸収体パ
ターンを形成しても開口の周辺に、もりあがりが
発生せず、良好な吸収体パターンを形成できる。 Thereafter, by removing the auxiliary thin film 41, the same X-ray exposure mask as that obtained through the normal manufacturing process can be obtained. The etching rate of chromium used as the auxiliary thin film is much lower than the etching rate of gold, which is the base thin film, so for the same overetching time, the amount of chromium deposited in the openings of the spacer thick film is smaller than in the conventional case. And much less. Therefore, even when an absorber pattern is formed by electroplating, no bulging occurs around the opening, and a good absorber pattern can be formed.
ここで、補助薄膜として用いる金属は、クロム
の他、ベース薄膜として用いられる金属よりイオ
ン照射エツチング速度の小さい金属であれば、適
宜選択して用いることができる。 Here, the metal used as the auxiliary thin film can be appropriately selected and used, in addition to chromium, as long as it has a lower ion irradiation etching rate than the metal used as the base thin film.
以上説明したように、本発明によれば、良好な
Ｘ線吸収体パターンを有するＸ線露光用マスクを
歩留りよく製造することができる。 As described above, according to the present invention, an X-ray exposure mask having a good X-ray absorber pattern can be manufactured with high yield.
第１図は従来のＸ線露光用マスクの製造工程を
示す断面図で、１はマスク支持体上にＸ線透過支
持体層を形成した状態、２はその上に電気めつき
用ベース薄膜を形成した状態、３はその上にスペ
ーサ厚膜を被着した後、加速されたイオンを照射
した状態、４はイオン照射されたスペーサ厚膜に
開口が形成された状態、５はＸ線吸収体パターン
を形成した後、スペーサ厚膜を除去した状態を表
わす。第２図はイオン照射を過度に行なつたとき
にスパツタされたベース薄膜物質がスペーサ厚膜
の側壁に付着した状態を表わす。第３図はスペー
サ厚膜の側壁に付着したベース薄膜物質が、電気
めつき時の電極となり、吸収体がスペーサ厚膜の
開口の周辺にもりあがつた状態を表わす。第４図
は本発明の一実施例を説明するための断面図で、
１はマスク支持体上にＸ線透過支持体層を形成し
た状態、２はその上に電気めつき用ベース薄膜
と、さらにその上に補助薄膜を形成した状態、３
は、さらにその上にスペーサ厚膜を被着した後加
速されたイオンを照射した状態、４はイオン照射
されたスペーサ厚膜に開口が形成された状態、５
は、開口が形成されたスペーサ厚膜をマスクとし
て前記補助薄膜をエツチングした状態、６はＸ線
吸収体パターンを形成した後、スペーサ厚膜を除
去した状態を表わす。
図において、１はマスク支持体、２はＸ線透過
支持体層、３はベース薄膜、４はスペーサ厚膜、
５はイオン照射、６は開口、７はＸ線吸収体パタ
ーン、２１はスペーサ厚膜の側壁に付着したベー
ス薄膜物質、３１は吸収体のもりあがり、４１は
補助薄膜を表わす。
Figure 1 is a cross-sectional view showing the manufacturing process of a conventional X-ray exposure mask, in which 1 shows a state in which an X-ray transparent support layer is formed on a mask support, and 2 shows a state in which an electroplating base thin film is formed on it. 3 is a state in which accelerated ions have been irradiated after a spacer thick film has been deposited thereon, 4 is a state in which an opening is formed in the ion-irradiated spacer thick film, and 5 is an X-ray absorber. This shows the state in which the thick spacer film is removed after forming the pattern. FIG. 2 shows a state in which the base thin film material sputtered when excessive ion irradiation is applied adheres to the sidewalls of the spacer thick film. FIG. 3 shows a state in which the base thin film material adhered to the side wall of the spacer thick film serves as an electrode during electroplating, and the absorber rises around the opening of the spacer thick film. FIG. 4 is a sectional view for explaining one embodiment of the present invention.
1 is a state in which an X-ray transparent support layer is formed on a mask support, 2 is a state in which an electroplating base thin film is formed on it, and an auxiliary thin film is further formed on it, 3
4 is a state in which a thick spacer film is further deposited on top of the spacer film and then irradiated with accelerated ions; 4 is a state in which an opening is formed in the ion-irradiated spacer thick film; 5 is a state in which an opening is formed in the ion-irradiated spacer thick film;
6 represents the state in which the auxiliary thin film was etched using the spacer thick film with openings as a mask, and 6 represents the state in which the spacer thick film was removed after forming the X-ray absorber pattern. In the figure, 1 is a mask support, 2 is an X-ray transparent support layer, 3 is a base thin film, 4 is a spacer thick film,
5 is an ion irradiation, 6 is an aperture, 7 is an X-ray absorber pattern, 21 is a base thin film material attached to the side wall of the spacer thick film, 31 is a rise of the absorber, and 41 is an auxiliary thin film.
Claims (1)
薄膜を被着し、そのベース薄膜の上に設けられた
スペーサ厚膜の開口を通して電気めつきにより前
記ベース薄膜上にＸ線吸収体パターンを形成する
工程を有するＸ線露光用マスクの製造方法におい
て前記ベース薄膜と前記スペーサ厚膜の間に前記
ベース薄膜よりイオン照射エツチング速度の小さ
い物質からなる補助薄膜を設け、この補助薄膜を
ストツパーとして前記スペーサー厚膜の開口を設
け前記電気めつきの前に、その開口部の補助薄膜
を除去する工程を含むことを特徴とするＸ線露光
用マスクの製造方法。1. A base thin film for electroplating is deposited on the X-ray transparent support layer, and an X-ray absorber pattern is formed on the base thin film by electroplating through the opening of a spacer thick film provided on the base thin film. An auxiliary thin film made of a substance having a lower ion irradiation etching rate than the base thin film is provided between the base thin film and the spacer thick film, and this auxiliary thin film is used as a stopper. A method for manufacturing an X-ray exposure mask, comprising the steps of providing an opening in the spacer thick film and removing an auxiliary thin film in the opening before the electroplating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046281A JPS57185438A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046281A JPS57185438A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57185438A JPS57185438A (en) | 1982-11-15 |
| JPH0160935B2 true JPH0160935B2 (en) | 1989-12-26 |
Family
ID=13432203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7046281A Granted JPS57185438A (en) | 1981-05-11 | 1981-05-11 | Production of x-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57185438A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4899660B2 (en) * | 2006-06-26 | 2012-03-21 | 株式会社デンソー | Method for forming corrugated fin for heat exchanger and roller for forming corrugated fin |
-
1981
- 1981-05-11 JP JP7046281A patent/JPS57185438A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57185438A (en) | 1982-11-15 |
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