JPH059756A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPH059756A JPH059756A JP18942191A JP18942191A JPH059756A JP H059756 A JPH059756 A JP H059756A JP 18942191 A JP18942191 A JP 18942191A JP 18942191 A JP18942191 A JP 18942191A JP H059756 A JPH059756 A JP H059756A
- Authority
- JP
- Japan
- Prior art keywords
- region
- etching
- etched
- shape
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はエッチング方法に関し、
特に板状素材に貫通部とハーフエッチ部とを形成するエ
ッチング方法に関する。FIELD OF THE INVENTION The present invention relates to an etching method,
In particular, it relates to an etching method for forming a penetrating portion and a half-etched portion in a plate-shaped material.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】薄板状
金属材料をエッチング処理することにより所望パターン
の貫通除去部（貫通部）と所望パターンの非貫通除去部
（ハーフエッチ部）とを形成する技術が広く利用されて
いる。この種の技術としては、例えば特開昭６３−４７
９６０号公報に記載されている様なリードフレームの製
造方法が挙げられる。2. Description of the Related Art A thin plate metal material is etched to form a through-removed portion (penetrated portion) having a desired pattern and a non-penetrated removed portion (half-etched portion) having a desired pattern. The technology is widely used. An example of this type of technology is Japanese Patent Laid-Open No. 63-47.
A method of manufacturing a lead frame as described in Japanese Patent Publication No. 960 is cited.
【０００３】上記公報に記載されている従来の方法で
は、ハーフエッチ部に部分的マスキングを形成してエッ
チングを抑制している。しかしながら、この従来方法で
は、貫通部とハーフエッチ部とを同一時間のエッチング
処理で目的形状に形成しようとするので、ハーフエッチ
部の深さを正確に制御すると貫通部の形状が最適形状か
らずれてしまい、また貫通部の形状を正確に制御すると
ハーフエッチ部の深さが最適値からずれてしまうため、
貫通部の形状及びハーフエッチ部の深さの双方を正確に
制御することが難しい。In the conventional method described in the above publication, etching is suppressed by forming a partial masking on the half-etched portion. However, in this conventional method, since the penetrating part and the half-etched part are formed into the target shape by the etching treatment of the same time, if the depth of the half-etched part is accurately controlled, the shape of the penetrating part is deviated from the optimum shape. In addition, if the shape of the penetrating part is accurately controlled, the depth of the half-etched part will deviate from the optimum value.
It is difficult to accurately control both the shape of the penetrating portion and the depth of the half-etched portion.
【０００４】近年、以上の様なハーフエッチ部を有する
製品について、ハーフエッチ部の深さ精度及び貫通部の
寸法形状精度はますます高いものが要求されている。In recent years, with respect to the products having the above half-etched portions, the depth accuracy of the half-etched portions and the dimensional shape accuracy of the penetrating portions are required to be even higher.
【０００５】そこで、本発明は、以上の様な従来技術の
問題点を解決して、貫通部の寸法形状及びハーフエッチ
部の深さの双方を精密に制御し得るエッチング方法を提
供することを目的とするものである。Therefore, the present invention solves the above problems of the prior art and provides an etching method capable of precisely controlling both the size and shape of the penetrating portion and the depth of the half-etched portion. It is intended.
【０００６】[0006]
【課題を解決するための手段】本発明によれば、上記目
的を達成するものとして、板状素材の第１の領域に貫通
部を形成するとともに該板状素材の第２の領域の表面に
ハーフエッチ部を形成するエッチング方法であって、上
記板状素材の第１の領域以外の領域の両面に防食被覆を
形成して第１次エッチングを行い、上記第１の領域に目
的形状に到達する前の穴または貫通孔を形成し、次に上
記第２の領域の表面の防食被覆を微小網目パターン状に
除去して第２次エッチングを行い、上記第２の領域に目
的深さのハーフエッチ部を形成するとともに上記第１の
領域に目的形状の貫通部を形成し、しかる後に上記防食
被覆を除去する、ことを特徴とする、エッチング方法、
が提供される。According to the present invention, in order to achieve the above object, a penetrating portion is formed in a first region of a plate-shaped material and a surface of a second region of the plate-shaped material is formed. An etching method for forming a half-etched portion, wherein an anticorrosion coating is formed on both surfaces of the plate-shaped material other than the first area to perform a primary etching, and the target shape is reached in the first area. Before forming a hole or through hole, and then the anticorrosion coating on the surface of the second region is removed in the form of a fine mesh pattern to carry out the secondary etching to form a half of the target depth in the second region. An etching method, characterized in that an etching part is formed and a penetrating part having a target shape is formed in the first region, and then the anticorrosion coating is removed.
Will be provided.
【０００７】本発明においては、上記防食被覆としてポ
ジ型フォトレジストを用いることができる。更に、本発
明においては、上記第１次エッチングにより第１の領域
に形成された穴または貫通孔の形状に応じて上記第２の
領域で除去される防食被覆の微小網目パターンの粗さを
設定することができる。In the present invention, a positive photoresist can be used as the anticorrosion coating. Further, in the present invention, the roughness of the fine mesh pattern of the anticorrosion coating to be removed in the second region is set according to the shape of the hole or the through hole formed in the first region by the primary etching. can do.
【０００８】[0008]
【実施例】以下、本発明の実施例を図面に基づき説明す
る。Embodiments of the present invention will be described below with reference to the drawings.
【０００９】図１〜図９は本発明方法の一例を具体的に
説明するための各工程の概略を示す模式的断面図であ
る。1 to 9 are schematic cross-sectional views showing the outline of each step for specifically explaining one example of the method of the present invention.
【００１０】図１に示されている様に、エッチング処理
される板状素材としての金属板２を用意する。該金属板
は銅合金、鉄ニッケル合金等であり、その厚さは例えば
０．１〜０．３ｍｍである。As shown in FIG. 1, a metal plate 2 as a plate-shaped material to be etched is prepared. The metal plate is a copper alloy, an iron-nickel alloy or the like, and its thickness is, for example, 0.1 to 0.3 mm.
【００１１】次に、図２に示されている様に、金属板２
の両面に防食被覆４を形成する。該防食被覆はポジ型フ
ォトレジストであり、その厚さは例えば１〜１０μｍで
ある。Next, as shown in FIG. 2, the metal plate 2
The anticorrosion coating 4 is formed on both surfaces of the. The anticorrosion coating is a positive photoresist, and its thickness is, for example, 1 to 10 μm.
【００１２】次に、図３に示されている様に、両面のフ
ォトレジスト４に対し露光マスク６を付して露光（第１
次露光）を行う。該露光マスクには、貫通部を形成しよ
うとする領域に両面から光が照射される様に、所望パタ
ーンの光通過部６ａが形成されている。Next, as shown in FIG. 3, an exposure mask 6 is applied to the photoresist 4 on both sides to expose (first
Next exposure) is performed. In the exposure mask, a light passage portion 6a having a desired pattern is formed so that light is irradiated from both sides to a region where a penetrating portion is to be formed.
【００１３】次に、図４に示されている様に、現像（第
１次現像）処理により、光照射を受けた領域のフォトレ
ジスト４を除去し、フォトレジスト４に開口領域４ａを
形成する。Next, as shown in FIG. 4, the photoresist 4 in the region irradiated with light is removed by a development (first development) process, and an opening region 4a is formed in the photoresist 4. .
【００１４】次に、図５に示されている様に、適宜の時
間エッチング（第１次エッチング）を行い、金属板２の
上記フォトレジスト開口領域４ａに対応する位置に両面
から所望深さの穴２ａを形成する。Next, as shown in FIG. 5, etching (primary etching) is performed for an appropriate time, and the metal plate 2 is provided with a desired depth from both sides at a position corresponding to the photoresist opening region 4a. The hole 2a is formed.
【００１５】次に、図６に示されている様に、両面のフ
ォトレジスト４に対し露光マスク８を付して露光（第２
次露光）を行う。下面側の露光マスクは全面光不透過性
であるが、上面側の露光マスクには、ハーフエッチ部を
形成しようとする領域に光が照射される様に、所望微小
網目パターンの光通過部８ｂが形成されている。これら
各光通過部８ｂの寸法は例えば２０〜５０μｍである。Next, as shown in FIG. 6, an exposure mask 8 is attached to the photoresist 4 on both sides to expose (second
Next exposure) is performed. The exposure mask on the lower surface is totally opaque to light, but the exposure mask on the upper surface is provided with a light passing portion 8b having a desired fine mesh pattern so that light is irradiated to the region where the half-etched portion is to be formed. Are formed. The size of each of these light passage portions 8b is, for example, 20 to 50 μm.
【００１６】次に、図７に示されている様に、現像（第
２次現像）処理により、光照射を受けた部分のフォトレ
ジスト４を除去し、フォトレジスト４に微小網目パター
ンの開口４ｂを形成する。Next, as shown in FIG. 7, the photoresist 4 in the portion irradiated with light is removed by a development (second development) process, and the photoresist 4 has openings 4b having a fine mesh pattern. To form.
【００１７】次に、図８に示されている様に、適宜の時
間エッチング（第２次エッチング）を行い、上記フォト
レジスト微小網目パターン形成領域に対応する金属板２
の領域にハーフエッチ部２ｂを形成するとともに、図５
の穴２ａに対応する位置に貫通部２ａ’を形成する。Next, as shown in FIG. 8, etching (secondary etching) is performed for an appropriate time, and the metal plate 2 corresponding to the photoresist fine mesh pattern forming region is formed.
While forming the half-etched portion 2b in the area of FIG.
The penetrating portion 2a 'is formed at a position corresponding to the hole 2a.
【００１８】次に、図９に示されている様に、フォトレ
ジストを除去する。Next, as shown in FIG. 9, the photoresist is removed.
【００１９】以上の工程により、図９に示されている様
に、金属板２の第１の領域Ｓ1 （上記露光マスク６の光
通過部６ａ、上記フォトレジスト４の開口領域４ａ、及
び上記金属板２の穴２ａに対応する）には貫通部が形成
され、金属板２の第２の領域Ｓ2 （上記露光マスク８の
光通過部８ｂによる微小網目パターン領域、及び上記フ
ォトレジスト４の開口４ｂによる微小網目パターン領域
に対応する）にはハーフエッチ部が形成される。Through the above steps, as shown in FIG. 9, the first region S 1 of the metal plate 2 (the light passage portion 6a of the exposure mask 6, the opening region 4a of the photoresist 4, and the above-mentioned region 4a) is formed. A penetrating portion is formed in the metal plate 2 (corresponding to the hole 2a), and a second region S 2 of the metal plate 2 (a fine mesh pattern region formed by the light passage portion 8b of the exposure mask 8 and the photoresist 4) is formed. A half-etched portion is formed in the fine mesh pattern area formed by the opening 4b.
【００２０】図１０及び図１１は本発明によりハーフエ
ッチ部の深さ制御が可能であることを説明するための模
式的断面図である。これらの図において、上記図１〜図
９におけると同様の部材には同一の符号が付されてい
る。また、図１０及び図１１において、（ａ）は第１次
エッチング後の上記図５の状態を示し、（ｂ）は第２次
エッチング後の上記図８の状態を示す。10 and 11 are schematic cross-sectional views for explaining that the depth of the half-etched portion can be controlled according to the present invention. In these figures, the same members as those in FIGS. 1 to 9 are designated by the same reference numerals. 10 and 11, (a) shows the state of FIG. 5 described above after the primary etching, and (b) shows the state of FIG. 8 described above after the secondary etching.
【００２１】図１０は、第１次エッチング時間がＡ1
で、第２次エッチング時間がＡ2 である場合を示す。ま
た、図１１は、第１次エッチング時間がＢ1 （＞Ａ1 ）
で、第２次エッチング時間がＢ2 （＜Ａ2 ）である場合
を示す。ここで、（Ａ1 ＋Ａ2）＝（Ｂ1 ＋Ｂ2 ）であ
り、図１０と図１１とで合計エッチング時間は同一であ
る。従って、第１の領域Ｓ1 に形成される貫通部の寸法
形状は同一である。そして、第２の領域Ｓ2 に形成され
るハーフエッチ部の深さは、第１０図の場合が時間Ａ2
に対応してｄ1 であり、第１１図の場合が時間Ｂ2 に対
応してｄ2 （＜ｄ1 ）である。この様に、第１次エッチ
ング時間と第２次エッチング時間との合計を一定に維持
しつつ第２次エッチング時間を適正に選択することによ
り、貫通部を所望の寸法形状となし且つハーフエッチ部
を所望の深さとなすことができ、双方の精度を十分高め
ることができる。FIG. 10 shows that the primary etching time is A 1
The case where the secondary etching time is A 2 is shown. Further, FIG. 11 shows that the primary etching time is B 1 (> A 1 ).
The case where the secondary etching time is B 2 (<A 2 ) is shown. Here, (A 1 + A 2 ) = (B 1 + B 2 ), and the total etching time is the same in FIGS. 10 and 11. Therefore, the size and shape of the penetrating portion formed in the first region S 1 are the same. The depth of the half-etched portion formed in the second region S 2 is the time A 2 in the case of FIG.
Corresponds to d 1 and in the case of FIG. 11 corresponds to time B 2 is d 2 (<d 1 ). As described above, by properly selecting the secondary etching time while keeping the total of the primary etching time and the secondary etching time constant, the penetrating portion is formed into a desired size and shape and the half-etched portion is formed. Can be made to have a desired depth, and the accuracy of both can be sufficiently enhanced.
【００２２】本発明において、第２次エッチングのため
の防食被覆の微小網目パターンは、所望深さのハーフエ
ッチ部を形成できる程度に巨視的にみて均一性を有する
パターンであればよく、その微視的形状は問わない。In the present invention, the fine mesh pattern of the anticorrosion coating for the secondary etching may be a pattern which is macroscopically uniform enough to form a half-etched portion having a desired depth. The visual shape does not matter.
【００２３】そして、この編目パターンの粗さに応じて
エッチング除去量が変化するので、第１次エッチングに
より第１の領域に形成された穴または貫通孔の形状に応
じて微小網目パターンの粗さを適宜設定することによ
り、ハーフエッチ部の深さを所望値に制御することもで
きる。Since the etching removal amount changes according to the roughness of the stitch pattern, the roughness of the fine mesh pattern depends on the shape of the hole or the through hole formed in the first region by the primary etching. It is also possible to control the depth of the half-etched portion to a desired value by appropriately setting
【００２４】[0024]
【発明の効果】以上の様に、本発明によれば、第１次エ
ッチングにより第１の領域に目的形状に到達する前の穴
または貫通孔を形成し、次いで第２の領域の表面の防食
被覆を微小網目パターン状に除去して第２次エッチング
を行うことにより、第２の領域に目的深さのハーフエッ
チ部を正確に形成するとともに第１の領域に目的形状の
貫通部を正確に形成することができる。As described above, according to the present invention, a hole or a through hole before reaching the target shape is formed in the first region by the primary etching, and then the surface of the second region is protected against corrosion. By performing the secondary etching after removing the coating in the form of a fine mesh pattern, a half-etched portion having a target depth is accurately formed in the second region, and a penetrating portion having a target shape is accurately formed in the first region. Can be formed.
【図１】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 1 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図２】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 2 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図３】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 3 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図４】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 4 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図５】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 5 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図６】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 6 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図７】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 7 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図８】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 8 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図９】本発明の各工程の概略を示す模式的断面図であ
る。FIG. 9 is a schematic cross-sectional view showing the outline of each step of the present invention.
【図１０】本発明によりハーフエッチ部の深さ制御が可
能であることを説明するための模式的断面図である。FIG. 10 is a schematic cross-sectional view for explaining that the depth control of the half-etched portion is possible according to the present invention.
【図１１】本発明によりハーフエッチ部の深さ制御が可
能であることを説明するための模式的断面図である。FIG. 11 is a schematic cross-sectional view for explaining that the depth control of the half-etched portion is possible according to the present invention.
２ 金属板 ２ａ 穴 ２ａ’貫通部 ２ｂ ハーフエッチ部 ４ フォトレジスト ４ａ 開口領域 ４ｂ 開口 ６ 露光マスク ６ａ 光通過部 ８ 露光マスク ８ｂ 光通過部 Ｓ1 第１の領域 Ｓ2 第２の領域2 Metal plate 2a Hole 2a 'Penetrating part 2b Half-etched part 4 Photoresist 4a Opening region 4b Opening 6 Exposure mask 6a Light passing part 8 Exposure mask 8b Light passing part S 1 First region S 2 Second region
Claims (3)
るとともに該板状素材の第２の領域の表面にハーフエッ
チ部を形成するエッチング方法であって、 上記板状素材の第１の領域以外の領域の両面に防食被覆
を形成して第１次エッチングを行い、上記第１の領域に
目的形状に到達する前の穴または貫通孔を形成し、 次に上記第２の領域の表面の防食被覆を微小網目パター
ン状に除去して第２次エッチングを行い、上記第２の領
域に目的深さのハーフエッチ部を形成するとともに上記
第１の領域に目的形状の貫通部を形成し、 しかる後に上記防食被覆を除去する、 ことを特徴とする、エッチング方法。1. An etching method for forming a through portion in a first region of a plate-shaped material and forming a half-etched portion on the surface of a second region of the plate-shaped material, the method comprising the steps of: The anti-corrosion coating is formed on both surfaces of the area other than the area 1 and the primary etching is performed to form a hole or a through hole before reaching the target shape in the first area, and then the second area. The anticorrosion coating on the surface of is removed in the form of a fine mesh pattern and the second etching is performed to form a half-etched portion having a target depth in the second region and a penetrating portion having the target shape in the first region. Forming, and then removing the anticorrosion coating, an etching method comprising:
ある、請求項１に記載のエッチング方法。2. The etching method according to claim 1, wherein the anticorrosion coating is a positive photoresist.
に形成された穴または貫通孔の形状に応じて上記第２の
領域で除去される防食被覆の微小網目パターンの粗さを
設定する、請求項１に記載のエッチング方法。3. The roughness of the fine mesh pattern of the anticorrosion coating removed in the second region is set according to the shape of the hole or through hole formed in the first region by the primary etching. The etching method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03189421A JP3077918B2 (en) | 1991-07-04 | 1991-07-04 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03189421A JP3077918B2 (en) | 1991-07-04 | 1991-07-04 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH059756A true JPH059756A (en) | 1993-01-19 |
| JP3077918B2 JP3077918B2 (en) | 2000-08-21 |
Family
ID=16240978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03189421A Expired - Lifetime JP3077918B2 (en) | 1991-07-04 | 1991-07-04 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3077918B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06240472A (en) * | 1993-02-16 | 1994-08-30 | G T C:Kk | Formation of fine pattern |
| USRE40203E1 (en) | 1992-10-07 | 2008-04-01 | Western Digital (Fremont), Llc | Magnetic head suspension assembly fabricated with integral load beam and flexure |
| JP2010010634A (en) * | 2008-06-30 | 2010-01-14 | Shinko Electric Ind Co Ltd | Lead frame, and method of manufacturing semiconductor device |
| JP2016105432A (en) * | 2014-12-01 | 2016-06-09 | Ｓｈマテリアル株式会社 | Manufacturing method of lead frame |
-
1991
- 1991-07-04 JP JP03189421A patent/JP3077918B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE40203E1 (en) | 1992-10-07 | 2008-04-01 | Western Digital (Fremont), Llc | Magnetic head suspension assembly fabricated with integral load beam and flexure |
| JPH06240472A (en) * | 1993-02-16 | 1994-08-30 | G T C:Kk | Formation of fine pattern |
| JP2010010634A (en) * | 2008-06-30 | 2010-01-14 | Shinko Electric Ind Co Ltd | Lead frame, and method of manufacturing semiconductor device |
| JP2016105432A (en) * | 2014-12-01 | 2016-06-09 | Ｓｈマテリアル株式会社 | Manufacturing method of lead frame |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3077918B2 (en) | 2000-08-21 |
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