JPS6355209B2 - - Google Patents
Info
- Publication number
- JPS6355209B2 JPS6355209B2 JP13628680A JP13628680A JPS6355209B2 JP S6355209 B2 JPS6355209 B2 JP S6355209B2 JP 13628680 A JP13628680 A JP 13628680A JP 13628680 A JP13628680 A JP 13628680A JP S6355209 B2 JPS6355209 B2 JP S6355209B2
- Authority
- JP
- Japan
- Prior art keywords
- ray
- thin film
- base thin
- absorber pattern
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000006096 absorbing agent Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000006100 radiation absorber Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
本発明はＸ線露光用マスクの製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an X-ray exposure mask.
Ｘ線露光用マスクは、従来第１図に示す工程で
製造されている。すなわち、
(1) Ｘ線透過性基板、例えばシリコン単結晶基板
１の上にＸ線透過支持体層２を形成する。 An X-ray exposure mask has conventionally been manufactured by the process shown in FIG. That is, (1) an X-ray transparent support layer 2 is formed on an X-ray transparent substrate, for example, a silicon single crystal substrate 1;
(2) そのＸ線透過支持体層２の上に電気めつき用
のベース薄膜３を被着する、
(3) その上に所望のＸ線吸収体パターンと相補の
パターン４を形成する、
(4) その上から金を電気めつきすることによりＸ
線吸収体パターン５を形成し、しかる後、相補
のパターン４を除去する。(2) depositing a base thin film 3 for electroplating on the X-ray transparent support layer 2; (3) forming a pattern 4 complementary to the desired X-ray absorber pattern thereon; 4) By electroplating gold over it
A line absorber pattern 5 is formed and then the complementary pattern 4 is removed.
(5) Ｘ線吸収体パターン５をマスクとしてベース
薄膜３をエツチング除去する。さらに、基板１
の裏側の一部をエツチンングし、残りの部分を
補強支持梁とする。(5) Using the X-ray absorber pattern 5 as a mask, the base thin film 3 is removed by etching. Furthermore, substrate 1
A part of the back side of the frame is etched, and the remaining part is used as a reinforcing support beam.
ここで(5)の前段の工程はＸ線吸収体パターン５
以外のところのＸ線の透過率を向上させるために
また、(5)の後段の工程もＸ線の透過率を向上させ
るために必要である。 Here, the step before (5) is the X-ray absorber pattern 5.
In order to improve the X-ray transmittance in other parts, the subsequent step of (5) is also necessary to improve the X-ray transmittance.
ところが、Ｘ線吸収体パターン５の幅が微細に
なると、ベース薄膜３のエツチング時に生ずるＸ
線吸収体パターン５下のベース薄膜３の浸蝕６が
無視できなくなり、Ｘ線吸収体パターン５が剥離
し、マスク製造の歩留りが低下するという問題が
ある。 However, when the width of the X-ray absorber pattern 5 becomes fine,
There is a problem in that the erosion 6 of the base thin film 3 under the radiation absorber pattern 5 cannot be ignored, the X-ray absorber pattern 5 peels off, and the yield of mask manufacturing decreases.
本発明の目的は歩留りの良いＸ線露光用マスク
の製造方法を提供することにある。 An object of the present invention is to provide a method for manufacturing an X-ray exposure mask with high yield.
すなわち、本発明は上記のベース薄膜３をエツ
チング除去する工程(5)の前にＸ線吸収体パターン
５を構成している物質をその直下のベース薄膜３
に拡散させる工程を含むことにより得られる。 That is, in the present invention, before the step (5) of etching away the base thin film 3, the material constituting the X-ray absorber pattern 5 is removed from the base thin film 3 immediately below it.
It can be obtained by including a step of diffusing into.
以下本発明のＸ線露光用マスクの製造方法につ
いて説明する。 The method for manufacturing an X-ray exposure mask according to the present invention will be described below.
第１図の工程(4)においてベース薄膜３の上にＸ
線吸収体パターン５を被着した後、試料を100℃
以上に加熱する。しかる後、Ｘ線吸収体パターン
５をマスクとしてベース薄膜３をエツチングする
と、第２図のごとくＸ線吸収体パターン５下のベ
ース薄膜３は吸収体物質が拡散されているため、
ほとんどエツチングされない。したがつて、従来
の製造方法を用いたときに起こる浸蝕６がほとん
どないためＸ線吸収体パターン５が剥離してしま
うという現像を防止できる。 In step (4) in Figure 1, the X
After coating the line absorber pattern 5, the sample was heated to 100℃.
Heat to above temperature. Thereafter, when the base thin film 3 is etched using the X-ray absorber pattern 5 as a mask, as shown in FIG.
Almost no etching. Therefore, since there is almost no corrosion 6 that occurs when conventional manufacturing methods are used, development in which the X-ray absorber pattern 5 peels off can be prevented.
本発明ではベース薄膜３に用いる金属膜は、金
よりエツチング速度の速いものが選ばれるがNi
その他の遷移金属やパーマロイなどの合金が適し
ている。 In the present invention, the metal film used for the base thin film 3 is selected to have a faster etching speed than gold, but Ni
Other transition metals and alloys such as permalloy are suitable.
なお、試料の加熱は200℃以上或いは300℃以上
と高温にすればするほど良好な結果が得られる。 Note that the higher the temperature of heating the sample, such as 200°C or higher or 300°C or higher, the better the results will be obtained.
また、試料の加熱は相補パターン４の除去前に
行なつてもよく、または試料を加熱しつつ相補パ
ターン４の除去を行なつてもよい。 Further, the sample may be heated before removing the complementary pattern 4, or the complementary pattern 4 may be removed while heating the sample.
以上述べたように、本発明によれば歩留り良く
Ｘ線露光用マスクの製造が可能となる。 As described above, according to the present invention, it is possible to manufacture an X-ray exposure mask with high yield.
第１図は従来のＸ線露光用マスクの製造工程を
示す断面図で、１はＸ線透過性基板上にＸ線透過
支持体層を形成した状態、２はＸ線透過支持体層
上に電気めつき用ベース薄膜を被着した状態、３
は所望のＸ線吸収体パターンと相補のパターンを
形成した状態、４はＸ線吸収体パターンを形成し
相補のパターンを除去した状態、５はベース薄膜
をエツチングした状態を表わす。第２図は本発明
により得られるＸ線露光用マスクの断面図を表わ
す。
図において、１はＸ線透過性基板、２はＸ線透
過支持体層、３はベース薄膜、４は相補パター
ン、５はＸ線吸収体パターン、６はベース薄膜の
浸蝕を表わす。
FIG. 1 is a cross-sectional view showing the manufacturing process of a conventional X-ray exposure mask. 1 shows a state in which an X-ray transparent support layer is formed on an X-ray transparent substrate, and 2 shows a state in which an X-ray transparent support layer is formed on an X-ray transparent substrate. State where base thin film for electroplating is applied, 3
4 represents the state in which a pattern complementary to the desired X-ray absorber pattern has been formed, 4 represents the state in which the X-ray absorber pattern has been formed and the complementary pattern has been removed, and 5 represents the state in which the base thin film has been etched. FIG. 2 shows a cross-sectional view of an X-ray exposure mask obtained according to the present invention. In the figure, 1 represents an X-ray transparent substrate, 2 represents an X-ray transparent support layer, 3 represents a base thin film, 4 represents a complementary pattern, 5 represents an X-ray absorber pattern, and 6 represents erosion of the base thin film.
Claims (1)
異なる物質の電気めつき用のベース薄膜を被着す
る工程と、そのベース薄膜上に電気めつき法によ
りＸ線吸収体パターンを形成する工程と、そのＸ
線吸収体パターンをマスクとして前記ベース薄膜
をエツチング除去する工程とを有するＸ線露光用
マスクの製造方法において、前記ベース薄膜をエ
ツチング除去する工程の前にＸ線吸収体パターン
を構成している物質をその直下のベース薄膜に拡
散させる工程を含むことを特徴とするＸ線露光用
マスクの製造方法。1. A step of depositing a base thin film for electroplating of a material different from that of the X-ray absorber pattern on the X-ray transparent support layer, and forming an X-ray absorber pattern on the base thin film by electroplating. Process and its X
In the method for manufacturing an X-ray exposure mask, which includes the step of etching away the base thin film using the ray absorber pattern as a mask, the material constituting the X-ray absorber pattern is removed before the step of etching away the base thin film. 1. A method for manufacturing an X-ray exposure mask, comprising the step of diffusing a mask into a base thin film immediately below the mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13628680A JPS5760839A (en) | 1980-09-30 | 1980-09-30 | Manufacture of x-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13628680A JPS5760839A (en) | 1980-09-30 | 1980-09-30 | Manufacture of x-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5760839A JPS5760839A (en) | 1982-04-13 |
| JPS6355209B2 true JPS6355209B2 (en) | 1988-11-01 |
Family
ID=15171617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13628680A Granted JPS5760839A (en) | 1980-09-30 | 1980-09-30 | Manufacture of x-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5760839A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950443A (en) * | 1982-09-16 | 1984-03-23 | Hitachi Ltd | X-ray mask |
| JP3073067B2 (en) * | 1991-10-04 | 2000-08-07 | キヤノン株式会社 | X-ray exposure mask and method of manufacturing the same |
-
1980
- 1980-09-30 JP JP13628680A patent/JPS5760839A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5760839A (en) | 1982-04-13 |
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