JPS58202526A - Manufacture of x-ray exposure mask - Google Patents
Manufacture of x-ray exposure maskInfo
- Publication number
- JPS58202526A JPS58202526A JP57084767A JP8476782A JPS58202526A JP S58202526 A JPS58202526 A JP S58202526A JP 57084767 A JP57084767 A JP 57084767A JP 8476782 A JP8476782 A JP 8476782A JP S58202526 A JPS58202526 A JP S58202526A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- mask
- substrate
- film
- mask substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000006096 absorbing agent Substances 0.000 claims description 21
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 3
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- 230000002745 absorbent Effects 0.000 abstract 1
- 239000002250 absorbent Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000011259 mixed solution Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はＸ線路光用マスクの製造方法、詳しくは、マス
ク基板の加工溝に吸収体を埋込む方法により、従来のリ
フトオフ性を大きく改善させ、寸法精度の高いパターン
形成を高い歩留で実現させるものである。DETAILED DESCRIPTION OF THE INVENTION The present invention uses a method for manufacturing a mask for X-ray light, and more specifically, a method for embedding an absorber in a processed groove of a mask substrate, which greatly improves the conventional lift-off property and produces a pattern with high dimensional accuracy. This enables formation with a high yield.
Ｘ線マスクにおけるＸ線吸収体パターンの形成方法に関
しては、大きく分けて、二つの方法がとられている。そ
の一つは、吸収体薄膜上のレジストを電子線描画法によ
り加工し、このレジストをマスクとして、下地の吸収体
薄膜を加工するものである。この場合、吸収体である金
などの重金属の加工手段として、イオンミリングなどの
ドライエツチングが利用されるが、有機物であるレジス
トと吸収体金属のエツチング速度比が十分高くとれない
ために、レジスト膜厚を厚くしたり、レジストの下に中
間マスク層を介在させる試みがなされている。しかし、
レジスト膜を厚くすることはパターン解像度の低下につ
ながり、また、中間層を設ける方法も、寸法精度の低下
、−また製造工程の繁雑化につながり好ましくない。There are roughly two methods for forming an X-ray absorber pattern in an X-ray mask. One method is to process a resist on an absorber thin film by electron beam lithography, and use this resist as a mask to process the underlying absorber thin film. In this case, dry etching such as ion milling is used as a means of processing the heavy metal such as gold that is the absorber, but since the etching rate ratio between the organic resist and the absorber metal is not high enough, the resist film is Attempts have been made to increase the thickness or to interpose an intermediate mask layer under the resist. but,
Increasing the thickness of the resist film leads to a decrease in pattern resolution, and the method of providing an intermediate layer is also undesirable because it leads to a decrease in dimensional accuracy and a complicated manufacturing process.
第２の方法は、あらかじめ、レジストパターンを形成し
ておき、この試料全面に、吸収体金属をメッキや蒸着な
どの方法により被着する。この後レジスト上の吸収体金
属をリフトオフし、吸収体パターンを形成する。この方
法の問題点として、リフトオフ性が悪く、不必要な箇所
に吸収体金属が残存したり、吸収体パターンの倒れ、剥
れが発生することが多い。この対策として、リフトオフ
性を改善させるために、レジスト膜厚を厚くしたり中間
層を導入する方法がとられている。しかし、これらの方
法は、先の第一の方法の場合と同じように、十分な解決
策ではない。In the second method, a resist pattern is formed in advance, and an absorber metal is deposited on the entire surface of the sample by a method such as plating or vapor deposition. Thereafter, the absorber metal on the resist is lifted off to form an absorber pattern. The problem with this method is that the lift-off property is poor, and the absorber metal often remains in unnecessary places, and the absorber pattern collapses and peels off. As a countermeasure to this problem, methods of increasing the thickness of the resist film or introducing an intermediate layer have been taken in order to improve the lift-off property. However, these methods, as in the case of the first method above, are not sufficient solutions.
本発明の目的は、従来のリフトオフ方法を改善し、簡単
な製造工程により、安定に、寸法精度の高い微細パター
ン形成法を提供することである。An object of the present invention is to improve the conventional lift-off method and provide a method for stably forming fine patterns with high dimensional accuracy through a simple manufacturing process.
本発明は上記目的を達成す岑ため、壕ずリフトオフ性を
改善する定めに金属あ被着面上のパターンのコントラス
トを高くシ、この時、基板ドライエツチングの高選択性
を利用して薄いレジスト膜でマスク基板を加工し、この
加工溝へ吸収体金属を埋込むようにしたことを特徴とす
るものである。In order to achieve the above object, the present invention increases the contrast of the pattern on the metal deposition surface in order to improve the lift-off property without trenching, and at this time, utilizes the high selectivity of substrate dry etching to form a thin resist. This method is characterized in that the mask substrate is processed with a film, and the absorber metal is embedded in the processed grooves.
上記方法によってカロエ溝の段差が上記のコントラスト
増大に寄与し、リフトオフ性の向上が可能となる。同時
に、吸収体の微細パターンの埋込みにより、その保護と
しても有効である。By the above method, the step difference in the Caloe groove contributes to the above-mentioned increase in contrast, making it possible to improve the lift-off property. At the same time, embedding a fine pattern in the absorber is effective in protecting it.
以下実施例によって、本発明の詳細な説明する。The present invention will be described in detail below with reference to Examples.
第１図は本発明の製造方法によって製造されたＸ線露光
用マスクの側断面構造を示すもので、シリコン基板ｌの
加工溝へＸ線吸収体金属２が埋込まれた様子を示す。３
は支持枠である。FIG. 1 shows a side cross-sectional structure of an X-ray exposure mask manufactured by the manufacturing method of the present invention, and shows how an X-ray absorber metal 2 is embedded in a groove formed in a silicon substrate 1. FIG. 3
is the support frame.
第２図は本発明による方法の一実施例の工程を示すもの
である。FIG. 2 shows the steps of an embodiment of the method according to the invention.
（ａ）の様に、マスク基板となるべきシリコンウェーハ
１の表面上のレジスト、ＰＭＭＡを膜厚０，３μｍ〜０
．５μｍに塗布し、電子線描画により、レジストパター
ン４を形成する。次に（ｂ）の様にレジスト、を〜７し
と己７、〜イク。波プウズ〜エツチングにより、下地シ
リコン１を深さ０．５μｍ〜０．８μｍエツチングする
。反応ガスはＳ Ｆ、（６０％）＋ｉ（、（４０％）で
ある。次に（Ｃ）の様に試料全面に金２を膜厚０．５μ
ｍＫ、蒸着する。この後、アセトン中に浸漬させ、超音
波処理を行な−、レジスト、および、レジスト膜厚の金
をリフトオンする。最後にシリコン基板の裏面をフッ酸
／硝酸混合液によりエツチングし３〜５μｍ厚のマスク
基板とする。As shown in (a), the resist on the surface of the silicon wafer 1, which is to become a mask substrate, is coated with PMMA to a film thickness of 0.3 μm to 0.
．． A resist pattern 4 is formed by coating to a thickness of 5 μm and electron beam drawing. Next, as shown in (b), apply the resist to ~7 and then go to ~7. The base silicon 1 is etched to a depth of 0.5 μm to 0.8 μm by wave etching. The reaction gas is SF, (60%) + i(, (40%)). Next, as shown in (C), gold 2 is applied to the entire surface of the sample to a thickness of 0.5 μm.
mK, evaporate. Thereafter, it is immersed in acetone and subjected to ultrasonic treatment to lift-on the resist and the gold of the resist film thickness. Finally, the back surface of the silicon substrate is etched with a hydrofluoric acid/nitric acid mixture to form a mask substrate with a thickness of 3 to 5 μm.
本実施例によれば、マイクロ波プラズマエツチングがレ
ジスト膜４に与える損傷が極めて小さく、かつ、加工精
度が高いことから、レジストの膜厚を０．３μｍ以下Ｖ
Ｃまで抑えることができ、電子線描画の高解像性を十分
発揮させることが利点となる。According to this embodiment, since the damage caused to the resist film 4 by microwave plasma etching is extremely small and the processing accuracy is high, the film thickness of the resist is reduced to 0.3 μm or less.
The advantage is that it can suppress up to C, and the high resolution of electron beam lithography can be fully exhibited.
第３図は本発明による方法の他の実施例の工程を示す図
である。FIG. 3 shows the steps of another embodiment of the method according to the invention.
シリコンウェーハ５上にシリコン窒化膜６０．３μｍ４
をＣＶＤＫより被着し、その上にＴｉ膜７０．０１〜０
．０３μｍ３を蒸着する。さらにＴＩ膜膜上上ポリシリ
コン膜１０．５μｍ２をＣＶＤにより堆積させたものを
基板とする。上記の基板−Ｅにレジス）ＰＭＭＡＩを膜
厚０．３μｍで塗布し、電子線描画によりレジストパタ
ーン４を形成する（ａ）。次に（ｂ）の様にレジスト４
をマスクにして、ポリシリコン膜のマイクロ波プラズマ
エツチングを行なう。Silicon nitride film 60.3 μm4 on silicon wafer 5
was deposited by CVDK, and a Ti film of 70.01~0 was applied on top of it.
．． 03 μm3 is deposited. Further, a polysilicon film of 10.5 μm 2 was deposited on the TI film by CVD to form a substrate. PMMAI (resist) is applied to the above substrate-E to a thickness of 0.3 μm, and a resist pattern 4 is formed by electron beam lithography (a). Next, resist 4 as shown in (b).
Using this as a mask, microwave plasma etching of the polysilicon film is performed.
゛ 次に、−ｈ記試料に金２をメッキする。この時、金
２の膜厚をポリシリコン膜厚と同じ＜、０．５μｍに設
定すると、（Ｃ）の様にポリシリコンの加工溝のみに被
着する。最後に、レジスト４を酸素プラズマ処理で除去
した後、シリコンウェーハの裏面をエツチングして、（
ｄ）の様なマスク基板とする。゛Next, gold 2 is plated on the sample -h. At this time, if the film thickness of gold 2 is set to the same value as the polysilicon film thickness <0.5 μm, it will adhere only to the processed groove of the polysilicon as shown in (C). Finally, after removing the resist 4 by oxygen plasma treatment, the back side of the silicon wafer is etched (
A mask substrate as shown in d) is used.
本発明によれば、極めて簡単な方法で、高精度なＸ線用
マスクのＸ線吸収体パターンを形成することができるの
で、Ｘ線リングラフィの性能向上に効果がある。吸収体
に金を使用した場合、金の厚さ０．５μｍの条件に対し
、従来方法では、およそ、解像度は１μｍ程度で、歩留
は５０％以下レベルであるが、本発明の方法によれば、
解像度、。According to the present invention, it is possible to form a highly accurate X-ray absorber pattern of an X-ray mask using an extremely simple method, which is effective in improving the performance of X-ray phosphorography. When gold is used for the absorber, the conventional method has a resolution of about 1 μm and a yield of less than 50% for a gold thickness of 0.5 μm, but with the method of the present invention, the resolution is approximately 1 μm. Ba,
resolution,.
０．５μｍを歩留８０〜９０％で実現することが可能で
ある。It is possible to achieve 0.5 μm with a yield of 80 to 90%.
第１図は本発明によって製造されるＸ線賞光マスクのマ
スク構造を示す図、第２図および第３図はいずれも本発
明よる製造方法の実施例の工程を示す図である。
１・・・マスク基板（シリコン）、２・・・吸収体、３
・・・支持枠、４・・・レジスト（ＰＭＭＡ）、５・・
・シリコン基Ｌ ６・・・窒化シリコン、７・・・チ
タン。
代理人 弁理士 薄田利幸
第 １ 図
聞２ 図
χ ５ 図FIG. 1 is a diagram showing the mask structure of an X-ray radiation mask manufactured according to the present invention, and FIGS. 2 and 3 are diagrams each showing steps in an embodiment of the manufacturing method according to the present invention. 1...Mask substrate (silicon), 2...Absorber, 3
...Support frame, 4...Resist (PMMA), 5...
・Silicon base L 6...Silicon nitride, 7...Titanium. Agent Patent Attorney Toshiyuki Usuda No. 1 Illustration 2 Illustration χ 5 Illustration
Claims (1)
着する工程と、 （ｂ） 上記レジスト膜の所望部分に光、電子線、Ｘ
線、又はイオン線の露光を行った後、所定の現偉処理に
よりレジストパターンを形成する工程と、 （Ｃ） 上記レジストパターンをマスクトシテ、下地
の被加工物体を加工する工程と、 （ｄ） 上記の加工試料全面にＸ線吸収体の薄膜を被
着する工程と、 （ｅ） 上記レジスト膜、およびレジスト膜上のＸ線
吸収体を除去し、下地の加工部分のみにＸ線吸収体を残
存させる工程ならび、（ｆ） 上記被加工物体を裏面
側よりエツチング゛仝。 しマスク基板とする工程ｌ〃 有することを特徴とするＸ線吸収体パターンの形成方法
。[Claims] 1. (a) A step of depositing a resist film on the surface of a workpiece; (b) A step of applying light, an electron beam, or an X-ray to a desired portion of the resist film.
(C) masking the resist pattern and processing the underlying object to be processed; (d) (e) removing the resist film and the X-ray absorber on the resist film, and applying the X-ray absorber only to the underlying processed portion; (e) removing the resist film and the X-ray absorber on the resist film; and (f) etching the object to be processed from the back side. A method for forming an X-ray absorber pattern, characterized in that it comprises: step 1 of forming a mask substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57084767A JPS58202526A (en) | 1982-05-21 | 1982-05-21 | Manufacture of x-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57084767A JPS58202526A (en) | 1982-05-21 | 1982-05-21 | Manufacture of x-ray exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58202526A true JPS58202526A (en) | 1983-11-25 |
Family
ID=13839826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57084767A Pending JPS58202526A (en) | 1982-05-21 | 1982-05-21 | Manufacture of x-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58202526A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113621A (en) * | 1984-06-28 | 1986-01-21 | Hitachi Ltd | Pattern forming method |
| EP0234547A2 (en) * | 1986-02-28 | 1987-09-02 | Sharp Kabushiki Kaisha | Method of manufacturing photomask and photo-mask manufactured thereby |
| JPS647522A (en) * | 1987-06-30 | 1989-01-11 | Oki Electric Ind Co Ltd | X-ray mask and manufacture thereof |
-
1982
- 1982-05-21 JP JP57084767A patent/JPS58202526A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113621A (en) * | 1984-06-28 | 1986-01-21 | Hitachi Ltd | Pattern forming method |
| EP0234547A2 (en) * | 1986-02-28 | 1987-09-02 | Sharp Kabushiki Kaisha | Method of manufacturing photomask and photo-mask manufactured thereby |
| US5087535A (en) * | 1986-02-28 | 1992-02-11 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
| US5457006A (en) * | 1986-02-28 | 1995-10-10 | Sharp Kabushiki Kaisha | Method of manufacturing photo-mask and photo-mask manufactured thereby |
| JPS647522A (en) * | 1987-06-30 | 1989-01-11 | Oki Electric Ind Co Ltd | X-ray mask and manufacture thereof |
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