CN116988065A - Manufacturing method of metal electrode with grating-like structure and electrode - Google Patents
Manufacturing method of metal electrode with grating-like structure and electrode Download PDFInfo
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- CN116988065A CN116988065A CN202210452055.0A CN202210452055A CN116988065A CN 116988065 A CN116988065 A CN 116988065A CN 202210452055 A CN202210452055 A CN 202210452055A CN 116988065 A CN116988065 A CN 116988065A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 167
- 239000002184 metal Substances 0.000 title claims abstract description 167
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 78
- 239000002245 particle Substances 0.000 claims abstract description 72
- 230000000873 masking effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 238000010884 ion-beam technique Methods 0.000 claims description 17
- 229910000510 noble metal Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000003472 neutralizing effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- ARTPQYOULGKINC-UHFFFAOYSA-L O.[I+].[I-].[K+].[I-] Chemical compound O.[I+].[I-].[K+].[I-] ARTPQYOULGKINC-UHFFFAOYSA-L 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The application provides a manufacturing method of a metal electrode with a grating-like structure and an electrode. The metal layer is etched at a small angle to initially open to obtain a metal electrode with a rough grating-like structure, then the top of the metal layer is decorated by masking with a mask at a large angle, and when the mask is gradually consumed, the particle beam can be gradually etched to the bottom of the metal layer. Therefore, the metal sticky dirt on the side wall generated by small-angle etching is effectively removed, and meanwhile, the metal side wall with a special angle can be formed due to the etching time difference between the top and the bottom of the metal layer, so that the final metal electrode with the grating-like structure, which is regular in morphology and low in roughness, is obtained.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a manufacturing method of a metal electrode with a grating-like structure and an electrode.
Background
In integrated circuits (IC, integrated circuit) or microelectronics industry, noble metal films such as silver and gold have great potential in forming metal electrodes due to low resistivity and good electromigration resistance, but due to limited volatility of the noble metals, the noble metals are difficult to form metal electrodes with good morphology and similar grating structures through reactive plasma etching, and the problems of irregular etching morphology and high roughness also exist in the wet etching technology.
Therefore, how to improve the regularity and reduce the roughness of the manufactured metal electrode with the similar grating structure is a technical problem to be solved in the field.
Disclosure of Invention
In view of the above, the present application aims to provide a method for manufacturing a metal electrode with a grating-like structure and an electrode, which can manufacture the metal electrode with the grating-like structure with a specific angle, and has high shape regularity and small roughness.
In order to achieve the above purpose, the application has the following technical scheme:
in a first aspect, an embodiment of the present application provides a method for manufacturing a metal electrode with a similar grating structure, including:
providing a substrate, a metal layer and a mask plate which are sequentially laminated;
adopting IBE ion beam etching equipment to emit first particle beams to etch the metal layer under the masking of the mask plate at a first angle so as to obtain a rough grating-like structure metal electrode;
adopting the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode under the masking of the mask plate at a second angle so as to obtain a final grating-like structure metal electrode;
the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the substrate surface, and the second angle is an angle formed by the second particle beam and the normal direction of the substrate surface.
In one possible implementation, the first angle is greater than or equal to 0 ° and less than or equal to 20 °, and the second angle is greater than or equal to 50 ° and less than or equal to 80 °.
In one possible implementation, the method further comprises obtaining the first particle beam and the second particle beam in advance by:
introducing a first etching gas into a discharge chamber to obtain a first plasma beam, and neutralizing the first plasma beam into electric neutrality by using a neutralizer to obtain a first particle beam;
and introducing a second etching gas into the discharge chamber to obtain the second plasma beam, and neutralizing the second plasma beam into electric neutrality by adopting the neutralizer to obtain the second particle beam.
In one possible implementation, the first etching gas and the second etching gas include:
at least one of fluorine-based gas, nitrogen gas and inert gas.
In one possible implementation, the material of the metal layer includes:
noble metals or noble metal alloys.
In one possible implementation, the energy of the first and second particle beams is greater than or equal to 200V and less than or equal to 800V.
In one possible implementation, the material of the mask includes:
photoresist, metal or optical dielectric material.
In one possible implementation, the material of the substrate includes:
at least one of silicon oxide, silicon nitride or silicon oxynitride.
In a second aspect, embodiments of the present application provide a metal electrode of a grating-like structure, including the final metal electrode of a grating-like structure manufactured by the method described above.
In one possible implementation, the cross section of the final grating-like structure metal electrode is in the shape of an isosceles triangle.
Compared with the prior art, the application has the following beneficial effects:
the embodiment of the application provides a method and a structure for manufacturing a metal electrode with a similar grating structure, wherein the method comprises the following steps: providing a substrate, a metal layer and a mask which are sequentially stacked, adopting an IBE ion beam etching device to emit a first particle beam to etch the metal layer under the mask of the mask at a first angle to obtain a rough grating-like structure metal electrode, adopting an IBE ion beam etching device to emit a second particle beam to etch the rough grating-like structure metal electrode under the mask of the mask at a second angle to obtain a final grating-like structure metal electrode, wherein the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the surface of the substrate, and the second angle is an angle formed by the second particle beam and the normal direction of the surface of the substrate. The shielding effect of the mask plate and the special angled etching of IBE can be utilized, the metal layer can be initially opened by small-angle etching to obtain the metal electrode with the rough grating-like structure, then the top of the metal layer is modified by shielding of the mask at a large angle, and when the mask is gradually consumed, the particle beam can be gradually etched to the bottom of the metal layer. Therefore, the metal sticky dirt on the side wall generated by small-angle etching is effectively removed, and meanwhile, the metal side wall with a special angle can be formed due to the etching time difference between the top and the bottom of the metal layer, so that the final metal electrode with the grating-like structure, which is regular in morphology and low in roughness, is obtained.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are some embodiments of the application and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart showing a method for manufacturing a metal electrode with a similar grating structure according to an embodiment of the present application;
fig. 2 shows a schematic diagram of a sequentially stacked substrate, metal layer and mask for preparing a metal electrode with a grating-like structure according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a structure during the process of preparing a metal electrode with a grating-like structure according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a structure during the preparation of a metal electrode with a grating-like structure according to an embodiment of the present application;
FIG. 5 is a schematic diagram showing a structure during the preparation of a metal electrode with a similar grating structure according to an embodiment of the present application;
FIG. 6 is a schematic diagram of another embodiment of the present application for preparing a metal electrode with a grating-like structure;
fig. 7 is a schematic diagram of a metal electrode with a similar grating structure according to an embodiment of the present application.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
As described in the background art, research by the applicant finds that in the integrated circuit (IC, integrated circuit) or microelectronics industry, noble metal films such as silver and gold have great potential in forming metal electrodes with a grating-like structure due to low resistivity and good electromigration resistance, but due to limited volatility of the noble metals, it is difficult to form metal electrodes with a grating-like structure with good morphology by reactive plasma etching, and also, problems of irregular etched morphology and high roughness exist in the wet etching technology.
Therefore, how to improve the regularity and reduce the roughness of the manufactured metal electrode with the similar grating structure is a technical problem to be solved in the field.
In particular, if a post-noble metal deposition etch is used instead of the current damascene mode, the dimensional effects in the metallization may be reduced, which is advantageous for the formation of semiconductor chips, however, it is difficult to etch by reactive plasma at normal temperature. For example, the etching of Ag and Au in chlorine-based plasmas requires an increase in temperature or an increase in ion bombardment flux/energy, and has the problems of severe lateral undercutting, inability to control sidewall angles, poor morphology, and the like; meanwhile, wet etching also faces the same difficulty that inert noble metals are difficult to form soluble salts, and even a small number of paths are achievable, there are inherent defects. For example, in the semiconductor industry, an iodine-potassium iodide-water solution is commonly used for etching a gold film, although the requirements on uniformity and stability of etching rate can be met, after the etching is finished by only using the iodine-potassium iodide-water solution etching solution, the residual gold-plated film has the problems of serious irregularity in appearance of the gold layer and large roughness of the gold-plated layer, and is not beneficial to application popularization and acceptance of marketization.
In order to solve the above technical problems, embodiments of the present application provide a method for manufacturing a metal electrode with a similar grating structure and a structure thereof, wherein the method includes: providing a substrate, a metal layer and a mask which are sequentially stacked, adopting an IBE ion beam etching device to emit a first particle beam to etch the metal layer under the mask of the mask at a first angle to obtain a rough grating-like structure metal electrode, adopting an IBE ion beam etching device to emit a second particle beam to etch the rough grating-like structure metal electrode under the mask of the mask at a second angle to obtain a final grating-like structure metal electrode, wherein the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the surface of the substrate, and the second angle is an angle formed by the second particle beam and the normal direction of the surface of the substrate. The shielding effect of the mask plate and the special angled etching of IBE can be utilized, the metal layer can be initially opened by small-angle etching to obtain the metal electrode with the rough grating-like structure, then the top of the metal layer is modified by shielding of the mask at a large angle, and when the mask is gradually consumed, the particle beam can be gradually etched to the bottom of the metal layer. Therefore, the metal sticky dirt on the side wall generated by small-angle etching is effectively removed, and meanwhile, the metal side wall with a special angle can be formed due to the etching time difference between the top and the bottom of the metal layer, so that the final metal electrode with the grating-like structure, which is regular in morphology and low in roughness, is obtained.
For a better understanding of the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Exemplary method
Referring to fig. 1, the method for manufacturing a metal electrode with a similar grating structure according to an embodiment of the present application includes:
s101: and providing a substrate, a metal layer and a mask plate which are sequentially laminated.
Referring to fig. 2, a schematic diagram of a sequentially stacked substrate, metal layer and mask for preparing a metal electrode with a grating-like structure according to an embodiment of the present application is shown, in which in the embodiment of the present application, a material of the substrate 1 may be a material with an etching rate slower and substantially close to 0 so as to prevent etching damage to the substrate 1 when the metal layer is etched, and optionally, the material of the substrate 1 may include: at least one of silicon oxide, silicon nitride or silicon oxynitride, the substrate 1 may be made of different materials according to specific differences in etching requirements.
It should be noted that, the dimensional parameters among the substrate 1, the metal layer 2 and the mask 3 may be set according to actual requirements, and the embodiment of the present application is not limited herein, and may be specifically set by those skilled in the art according to actual situations.
In addition, because the metal layer 2 needs to be etched in order to form the metal electrode with the grating-like structure, the application also comprises a mask plate 3 arranged on one side, far away from the substrate 1, of the metal layer 2, wherein the mask plate 3 is made of a material with the etching rate being slower and basically close to 0, so that the high selectivity ratio of the metal layer 2 to the mask plate 3 is realized, and the ideal etching depth can be obtained while the etching morphology is ensured by the large selectivity ratio. The material of the mask plate 3 may specifically include photoresist, metal or optical medium material. For example, the material of the mask plate 3 provided in the embodiment of the present application may be chromium. According to the different shapes of the metal electrode with the similar grating structure, different shapes of mask plates 3 can be adopted.
S102: and (3) transmitting a first particle beam by using an IBE ion beam etching device, and etching the metal layer under the shielding of the mask plate at a first angle to obtain the rough grating-like structure metal electrode.
In the embodiment of the application, the IBE technology can be adopted to etch the metal layer 2, and the Ion Beam Etching technology (IBE) is a dry Etching process technology developed in the 70 th century, which utilizes ions with energy emitted by an Ion source to bombard a target material, so that the surface of the material is sputtered to achieve the purpose of removing the material, and the pure physical bombardment mode shows great potential in the field of noble metal Etching which is difficult to react. In the etching process, etching gas is introduced into a quartz cavity discharge chamber, and plasma is generated by high-frequency wave ionization excited by a radio-frequency coil. Ions are led out through a grid mesh and focused into a beam, then electrons emitted by a neutralizer are neutralized into neutral particle beams with certain energy, and the surface of a wafer on a carrier is bombarded to realize etching. The ion beam etching technology has the advantages of being good in anisotropy and low in surface damage, being capable of independently controlling etching parameters, being capable of etching any material and the like, and is an important high-precision pattern transfer technology in the manufacturing process flow of the micro-nano structure of the diffraction optical element.
The first particle beam emitted by the IBE ion beam etching device can be used for etching the metal layer 2 under the shielding of the mask plate 3 at a first angle to obtain the rough grating-like structure metal electrode, namely in the embodiment of the application, the metal layer 2 can be etched at a small angle to open part of the metal layer.
Referring to fig. 3, a schematic structural diagram of a part of a metal layer 2 is shown after opening the metal layer 2 in the embodiment of the present application, the dashed line with an arrow is a first particle beam, an angle a formed by the first particle beam and a normal direction of the surface of a substrate 1 is a first angle, when the metal layer 2 is etched by the first particle beam with the first angle, etching downward to open the metal layer 2 and deposition removing are performed synchronously, and when the metal layer 2 is gradually opened, it is ensured that the steepness is not affected by repeated deposition metal, and thus a nearly vertical shape of the metal layer 2 is obtained.
In one possible implementation manner, the first angle may be set to be greater than or equal to 0 ° and less than or equal to 20 °, and the energy of the first particle beam may be greater than or equal to 200V and less than or equal to 800V, so as to initially etch and open the metal layer 2, so as to obtain a rough grating-like structure metal electrode, and as shown in fig. 4, an included angle between the sidewall of the metal layer 2 of the rough grating-like structure metal electrode and the substrate 1 is θ1.
In one possible implementation manner, in order to obtain the first particle beam, the first etching gas may be introduced into the discharge chamber to obtain a first plasma beam, and the first plasma beam is neutralized by a neutralizer to obtain the first particle beam, and specifically, the first etching gas provided by the embodiment of the present application may include at least one of a fluorine-based gas, nitrogen gas and an inert gas, for example, may include CHF3, CF4, SF6, ar, N 2 When two or more gases are included in the first etching gas, the ratio between the etching gases of the respective kinds may be adjusted by those skilled in the art according to actual circumstances.
The particle Beam provided in the embodiment of the present application has a chemical reaction function and also has a certain physical bombardment function, and physical and chemical reactions can occur simultaneously when the particle Beam acts on the metal layer 2, and the bombardment intensity, the reaction rate, etc. can be adjusted by adjusting the energy (BMV) of the particle Beam, and in one possible implementation manner, the energy of the first particle Beam is greater than or equal to 200V and less than or equal to 800V.
S103: adopting the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode under the masking of the mask plate at a second angle so as to obtain a final grating-like structure metal electrode; the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the substrate surface, and the second angle is an angle formed by the second particle beam and the normal direction of the substrate surface.
In the embodiment of the application, in order to improve the regularity of the metal electrode with the similar grating structure and reduce the roughness of the surface, the IBE technology can be adopted to continuously etch the metal layer 2, at the moment, a large angle, namely a second angle is adopted to etch, the top of the metal layer 2 is modified in advance by utilizing the shielding of the mask plate 3, and when the mask plate 3 is gradually consumed, the second particle beam can be gradually etched to the bottom of the metal layer 2. Therefore, the metal sticky dirt on the side wall generated by the small-angle etching is effectively removed, and meanwhile, the metal side wall with a special angle can be formed due to the etching time difference between the top and the bottom of the metal layer 2.
When the incidence angle of the selected second particle beam is proper, so that the second particle beam is just etched to the junction of the metal layer 2 and the mask layer 3, the etched area of the metal layer 2 increases along with the consumption of the mask layer 3. Since the etching area metal layer 2 has a difference between the speed and the small angle under the large angle, an angle turning is formed at the etched/unetched juncture, and the main etching forms an angle theta 1> to modify to form an angle theta 2, as shown in fig. 5.
The etching of the metal layer 2 can be continued, and when the modification time of the second particle beam to the side wall of the metal layer 2 is continuously increased and the aspect ratio of the mask plate 3 is moderate, the metal electrode with the grating-like structure can be formed. As shown in fig. 6, the metal and the mask on both sides are continuously consumed, and the second particle beam continues to etch the metal layer 2 under the mask of the mask 3 at a second angle, and the oblique arrow in fig. 6 is the second particle beam, and the angle B formed by the oblique arrow and the normal direction of the surface of the substrate 1 is the second angle.
The metal layer 2 is continuously etched by the second particle beam with the second angle, the metal and the mask on two sides are continuously consumed until the metal and the mask shrink to a point, and in one possible implementation manner, the metal layer 2 is integrally expressed as pyramid-shaped lines due to the influence of IBE rotation and shows isosceles triangle morphology at the section, so that the final grating-like structure metal electrode formed is high in regularity and small in surface roughness, as shown in fig. 7. In a possible implementation manner, the cross section of the final metal electrode with the similar grating structure provided by the embodiment of the present application may also be in the shape of an isosceles trapezoid, which may be specifically adjusted by those skilled in the art according to actual situations, and the embodiment of the present application is not specifically limited herein.
In one possible implementation, the second angle may be set to be greater than or equal to 50 ° and less than or equal to 800 °, and the energy of the second particle beam may be greater than or equal to 200V and less than or equal to 800V, to etch the rough grating-like structure metal electrode to obtain the final grating-like structure metal electrode.
Alternatively, the bias voltage for accelerating the first particle beam and the second particle beam may be 80V.
In one possible implementation manner, in order to obtain the second particle beam, a second etching gas may be introduced into the discharge chamber to obtain a second plasma beam, and the second plasma beam is neutralized to be electrically neutral by using a neutralizer to obtain the second particle beam, and specifically, the second etching gas provided by the embodiment of the present application may include at least one of a fluorine-based gas, nitrogen gas and an inert gas, for example, may include CHF3, CF4, SF6, ar, N 2 When the second etching gas includes two or more gases, the ratio between the etching gases of the respective types may be adjusted by those skilled in the art according to actual conditions.
The particle Beam provided in the embodiment of the present application has a chemical reaction function and also has a certain physical bombardment function, and physical and chemical reactions can occur simultaneously when the particle Beam acts on the metal layer 2, and the bombardment intensity, the reaction rate, etc. can be adjusted by adjusting the energy (BMV) of the particle Beam, and in one possible implementation manner, the energy of the second particle Beam is greater than or equal to 200V and less than or equal to 800V, depending on the required etching rate, and the characteristics of the material itself.
The embodiment of the application provides a method for manufacturing a metal electrode with a similar grating structure, which comprises the following steps: providing a substrate, a metal layer and a mask which are sequentially stacked, adopting an IBE ion beam etching device to emit a first particle beam to etch the metal layer under the mask of the mask at a first angle to obtain a rough grating-like structure metal electrode, adopting an IBE ion beam etching device to emit a second particle beam to etch the rough grating-like structure metal electrode under the mask of the mask at a second angle to obtain a final grating-like structure metal electrode, wherein the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the surface of the substrate, and the second angle is an angle formed by the second particle beam and the normal direction of the surface of the substrate. The shielding effect of the mask plate and the special angled etching of IBE can be utilized, the metal layer can be initially opened by small-angle etching to obtain the metal electrode with the rough grating-like structure, then the top of the metal layer is modified by shielding of the mask at a large angle, and when the mask is gradually consumed, the particle beam can be gradually etched to the bottom of the metal layer. Therefore, the metal sticky dirt on the side wall generated by small-angle etching is effectively removed, and meanwhile, the metal side wall with a special angle can be formed due to the etching time difference between the top and the bottom of the metal layer, so that the final metal electrode with the grating-like structure, which is regular in morphology and low in roughness, is obtained.
Exemplary Structure
The embodiment of the application also provides a metal electrode with a similar grating structure, which comprises the final metal electrode with the similar grating structure manufactured by the method.
In one possible implementation, the cross section of the final grating-like structure metal electrode has an isosceles triangle shape, as shown in fig. 7.
The embodiment of the application provides a metal electrode with a grating-like structure, and a method for manufacturing the metal electrode with the grating-like structure comprises the following steps: providing a substrate, a metal layer and a mask which are sequentially stacked, adopting an IBE ion beam etching device to emit a first particle beam to etch the metal layer under the mask of the mask at a first angle to obtain a rough grating-like structure metal electrode, adopting an IBE ion beam etching device to emit a second particle beam to etch the rough grating-like structure metal electrode under the mask of the mask at a second angle to obtain a final grating-like structure metal electrode, wherein the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the surface of the substrate, and the second angle is an angle formed by the second particle beam and the normal direction of the surface of the substrate. The shielding effect of the mask plate and the special angled etching of IBE can be utilized, the metal layer can be initially opened by small-angle etching to obtain the metal electrode with the rough grating-like structure, then the top of the metal layer is modified by shielding of the mask at a large angle, and when the mask is gradually consumed, the particle beam can be gradually etched to the bottom of the metal layer. Therefore, the metal sticky dirt on the side wall generated by small-angle etching is effectively removed, and meanwhile, the metal side wall with a special angle can be formed due to the etching time difference between the top and the bottom of the metal layer, so that the final metal electrode with the grating-like structure, which is regular in morphology and low in roughness, is obtained.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for structural embodiments, since they are substantially similar to method embodiments, the description is relatively simple, and reference is made to the description of method embodiments for relevant points.
The foregoing is merely a preferred embodiment of the present application, and the present application has been disclosed in the above description of the preferred embodiment, but is not limited thereto. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present application or modifications to equivalent embodiments using the methods and technical contents disclosed above, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present application still fall within the scope of the technical solution of the present application.
Claims (10)
1. A method of manufacturing a metal electrode of a grating-like structure, comprising:
providing a substrate, a metal layer and a mask plate which are sequentially laminated;
adopting IBE ion beam etching equipment to emit first particle beams to etch the metal layer under the masking of the mask plate at a first angle so as to obtain a rough grating-like structure metal electrode;
adopting the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode under the masking of the mask plate at a second angle so as to obtain a final grating-like structure metal electrode;
the first angle is smaller than the second angle, the first angle is an angle formed by the first particle beam and the normal direction of the substrate surface, and the second angle is an angle formed by the second particle beam and the normal direction of the substrate surface.
2. The method of claim 1, wherein the first angle is greater than or equal to 0 ° and less than or equal to 20 ° and the second angle is greater than or equal to 50 ° and less than or equal to 80 °.
3. The method of claim 1, further comprising obtaining the first particle beam and the second particle beam in advance by:
introducing a first etching gas into a discharge chamber to obtain a first plasma beam, and neutralizing the first plasma beam into electric neutrality by using a neutralizer to obtain a first particle beam;
and introducing a second etching gas into the discharge chamber to obtain the second plasma beam, and neutralizing the second plasma beam into electric neutrality by adopting the neutralizer to obtain the second particle beam.
4. The method of claim 3, wherein the first etching gas and the second etching gas comprise:
at least one of fluorine-based gas, nitrogen gas and inert gas.
5. The method of claim 1, wherein the material of the metal layer comprises:
noble metals or noble metal alloys.
6. The method of claim 1, wherein the energy of the first particle beam and the second particle beam is greater than or equal to 200V and less than or equal to 800V.
7. The method of claim 1, wherein the reticle material comprises:
photoresist, metal or optical dielectric material.
8. The method of claim 1, wherein the material of the substrate comprises:
at least one of silicon oxide, silicon nitride or silicon oxynitride.
9. A grating-like structured metal electrode, comprising:
the final grating-like structure metal electrode manufactured by the method of any one of claims 1-8.
10. The electrode of claim 9, wherein the final grating-like structure metal electrode has a cross-section in the shape of an isosceles triangle.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210452055.0A CN116988065A (en) | 2022-04-24 | 2022-04-24 | Manufacturing method of metal electrode with grating-like structure and electrode |
| PCT/CN2022/133458 WO2023207053A1 (en) | 2022-04-24 | 2022-11-22 | Method for manufacturing metal electrode having grating-like structure, and electrode |
| TW111150750A TW202343564A (en) | 2022-04-24 | 2022-12-29 | Manufacturing method of grating like structure metal electrode, and electrode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210452055.0A CN116988065A (en) | 2022-04-24 | 2022-04-24 | Manufacturing method of metal electrode with grating-like structure and electrode |
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| CN116988065A true CN116988065A (en) | 2023-11-03 |
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| CN202210452055.0A Pending CN116988065A (en) | 2022-04-24 | 2022-04-24 | Manufacturing method of metal electrode with grating-like structure and electrode |
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| Country | Link |
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| CN (1) | CN116988065A (en) |
| TW (1) | TW202343564A (en) |
| WO (1) | WO2023207053A1 (en) |
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| KR102354468B1 (en) * | 2015-01-23 | 2022-01-24 | 삼성전자주식회사 | A method of forming fine patterns, a method of forming semiconductor devices using the same, and semiconductor devices manufactured using the same |
| US9978934B2 (en) * | 2015-10-30 | 2018-05-22 | Veeco Instruments Inc. | Ion beam etching of STT-RAM structures |
| KR102491093B1 (en) * | 2017-08-21 | 2023-01-20 | 삼성전자주식회사 | Method of forming patterns |
| CN111162164B (en) * | 2018-11-08 | 2023-06-13 | 江苏鲁汶仪器股份有限公司 | Manufacturing method of semiconductor device |
| CN110571122B (en) * | 2019-09-17 | 2022-04-15 | 江苏鲁汶仪器有限公司 | IBE etching machine adopting double ion sources and etching method |
| CN110831419B (en) * | 2019-11-05 | 2021-04-09 | 中国科学院光电技术研究所 | Preparation method of transparent electromagnetic shielding material based on metal mesh |
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| TW202343564A (en) | 2023-11-01 |
| WO2023207053A1 (en) | 2023-11-02 |
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