TW202343564A - Manufacturing method of grating like structure metal electrode, and electrode - Google Patents

Abstract

The present application discloses a manufacturing method of a grating like structure metal electrode, and an electrode. The IBE ion beam etching equipment is used to emit the first particle beam to etch the metal layer under the mask plate at the first angle to obtain the metal electrode with rough grating like structure. The IBE ion beam etching equipment is used to emit the second particle beam to etch the rough grating like metal electrode under the mask plate at the second angle to obtain the final grating like metal electrode. Namely, the metal layer can be initially opened by etching at a small angle to obtain the metal electrode with the rough grating like structure, and then the top of the metal layer can be first modified at a large angle by using the mask. When the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, not only the side wall metal fouling caused by small angle etching is effectively removed, but also the metal side wall with special angle can be formed due to the difference in etching time between the top and bottom of the metal layer, thus obtaining the final grating like structure metal electrode with regular morphology and low roughness.

Description

A kind of grating-like structure metal electrode manufacturing method and electrode

The present invention relates to the field of semiconductor technology, and in particular to a method for manufacturing a metal electrode with a grating-like structure and an electrode.

In the integrated circuit (IC) or microelectronics industry, noble metal films such as silver and gold have shown great potential in forming metal electrodes due to their low resistivity and good electromigration resistance. However, due to the Due to its limited volatility, it is difficult to form a metal electrode with a grating-like structure with good morphology through reactive plasma etching. Similarly, wet etching technology also has problems with irregular etching morphology and high roughness.

Therefore, how to improve the regularity and reduce the roughness of manufactured metal electrodes with a grating-like structure is a technical problem that needs to be solved in this field.

In view of this, the object of the present invention is to provide a method and electrode for manufacturing a metal electrode with a grating-like structure, which can produce a metal electrode with a grating-like structure at a specific angle, with high morphological regularity and small roughness.

In order to achieve the above objects, the present invention has the following technical solutions:

In a first aspect, embodiments of the present invention provide a method for manufacturing metal electrodes with a grating-like structure, including:

Provide a sequentially stacked substrate, metal layer and mask;

Using IBE ion beam etching equipment to emit a first particle beam to etch the metal layer under the cover of the mask plate at a first angle to obtain a roughly engraved grating-like structure metal electrode;

Using the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode at a second angle under the cover of the mask plate to obtain the final grating-like structure metal electrode;

The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is the angle between the second particle beam and the substrate surface. The angle formed by the normal direction of the substrate surface.

In a possible implementation, the first angle is greater than or equal to 0° and less than or equal to 20°, and the second angle is greater than or equal to 50° and less than or equal to 80°.

In a possible implementation, the method further includes obtaining the first particle beam and the second particle beam in advance through the following steps:

Passing the first etching gas into the discharge chamber to obtain the first plasma beam, using a neutralizer to neutralize the first plasma beam to electrical neutrality to obtain the first particle beam;

The second etching gas is introduced into the discharge chamber to obtain the second plasma beam, and the neutralizer is used to neutralize the second plasma beam to electrical neutrality to obtain the second particle beam.

In a possible implementation, the first etching gas and the second etching gas include:

At least one of fluorine-based gas, nitrogen gas and inert gas.

In a possible implementation, the material of the metal layer includes:

Precious metals or precious metal alloys.

In a possible implementation, the energy of the first particle beam and the second particle beam is greater than or equal to 200V and less than or equal to 800V.

In a possible implementation, the material of the mask plate includes:

Photoresist, metal or optical media materials.

In a possible implementation, the material of the substrate includes:

At least one of silicon oxide, silicon nitride or silicon oxynitride.

In a second aspect, embodiments of the present invention provide a metal electrode with a grating-like structure, including the final metal electrode with a grating-like structure manufactured using the method described above.

In a possible implementation, the final grating-like structure metal electrode has an isosceles triangle shape in cross section.

Compared with the prior art, the present invention has the following beneficial effects:

Embodiments of the present invention provide a method and structure for manufacturing a metal electrode with a grating-like structure. The method includes: providing a sequentially stacked substrate, a metal layer and a mask plate, and using IBE ion beam etching equipment to emit a first particle beam at a first angle. The metal layer is etched under the cover of the mask plate to obtain a metal electrode with a rough grating-like structure. The IBE ion beam etching equipment is used to emit a second particle beam at a second angle to etch the rough grating-like structure under the cover of the mask plate. Metal electrode to obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, the second angle is the normal direction between the second particle beam and the substrate surface the angle formed. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining the final type with regular morphology and low roughness. Grating structure metal electrode.

1:Substrate

2:Metal layer

3:Mask board

A, B, θ1, θ2: angle

S101, S102, S103: Method

In order to more clearly explain the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are the illustrations of the present invention. For some embodiments, those of ordinary skill in the art can also obtain other diagrams based on these diagrams without making any progress.

Figure 1 shows a flow chart of a method for manufacturing a metal electrode with a grating-like structure provided by an embodiment of the present invention;

Figure 2 shows a schematic diagram of a sequentially stacked substrate, metal layer and mask for preparing a metal electrode with a grating-like structure provided by an embodiment of the present invention;

Figure 3 shows a schematic diagram of the structure in the process of preparing a metal electrode with a grating-like structure provided by an embodiment of the present invention;

4 shows a schematic diagram of another structure in the process of preparing a metal electrode with a grating-like structure provided by an embodiment of the present invention;

Figure 5 shows a schematic diagram of the structure in the process of preparing a metal electrode with a grating-like structure according to another embodiment of the present invention;

Figure 6 shows a schematic diagram of another structure in the process of preparing a metal electrode with a grating-like structure provided by an embodiment of the present invention;

FIG. 7 shows a schematic diagram of a metal electrode with a grating-like structure provided by an embodiment of the present invention.

In order to make the above objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention will be described in detail below in conjunction with the drawings.

Many specific details are set forth in the following description to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Those skilled in the art can do so without departing from the connotation of the present invention. Similar generalizations are made, and therefore the present invention is not limited to the specific embodiments disclosed below.

As described in the prior art, the applicant’s research found that in the integrated circuit (IC) or microelectronics industry, precious metal films such as silver and gold have resistivity Low and good electromigration resistance has shown great potential in forming grating-like structure metal electrodes. However, due to the limited volatility of these noble metals, it is difficult to form grating-like structure metal electrodes with good morphology through reactive plasma etching. ,Similarly, using wet etching technology also has the problems of irregular etching morphology and high roughness.

Therefore, how to improve the regularity and reduce the roughness of manufactured metal electrodes with a grating-like structure is a technical problem that needs to be solved in this field.

Specifically, if the current Damascene model can be replaced by etching after noble metal deposition, the size effect in metallization may be reduced, favoring the formation of semiconductor wafers. However, it is difficult to etch by reactive plasma at room temperature. For example, etching Ag and Au in chlorine-based plasma requires increasing the temperature or increasing the ion bombardment flux/energy, and there are problems such as serious lateral undercutting, inability to control the sidewall angle, and poor morphology; at the same time, wet etching also faces The same problem is that it is difficult for inert precious metals to form soluble salts. Even if a small number of routes can be achieved, they still have inherent flaws. For example, in the semiconductor industry, iodine-potassium iodide-aqueous solution is commonly used to etch gold films. Although it can meet the requirements for uniformity and stability of the etching rate, after etching with iodine-potassium iodide-aqueous etching solution, the remaining electroplating The gold thin film has serious irregularities in the appearance of the gold layer and large roughness of the electroplated gold layer, which is not conducive to market application promotion and recognition.

In order to solve the above technical problems, embodiments of the present invention provide a method and structure for manufacturing a metal electrode with a grating-like structure. The method includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit the first The particle beam is used to etch the metal layer under the cover of the mask at a first angle to obtain a rough grating-like structure metal electrode. The IBE ion beam etching equipment is used to emit a second particle beam to etch under the cover of the mask at a second angle. Roughly etching the grating-like structure metal electrode to obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, and the second angle is the second particle The angle between the beam and the normal direction of the substrate surface. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining the final type with regular morphology and low roughness. Grating structure metal electrode.

In order to better understand the technical solutions and technical effects of the present invention, specific embodiments will be described in detail below in conjunction with the drawings.

Example methods

Referring to Figure 1, this figure is a flow chart of a method for manufacturing a metal electrode with a grating-like structure provided by an embodiment of the present invention. The method includes:

S101: Provide the substrate, metal layer and mask plate stacked in sequence.

Referring to Figure 2, a schematic diagram of a sequentially stacked substrate, metal layer and mask plate for preparing a metal electrode with a grating-like structure is provided according to an embodiment of the present invention. In the embodiment of the present invention, the material of the substrate 1 can be A material with a slow etching rate that is basically close to 0 to prevent etching damage to the substrate 1 when etching the metal layer. Optionally, the material of the substrate 1 may include: silicon oxide, silicon nitride or oxynitride. At least one kind of silicon is used. Depending on the specific differences in etching requirements, the substrate 1 can use different materials.

It should be noted that the dimensional parameters between the substrate 1, the metal layer 2 and the mask plate 3 can be set according to actual needs. The embodiments of the present invention are not specifically limited here, and can be set by those skilled in the art according to actual conditions.

In addition, since in order to form a metal electrode with a grating-like structure, the metal layer 2 needs to be etched, the present invention also includes a mask plate 3 provided on the side of the metal layer 2 away from the substrate 1. The material of the mask plate 3 is Materials with a slow etching rate that is basically close to 0 can achieve a high selectivity ratio of the metal layer 2 to the mask plate 3. A larger selectivity ratio can obtain an ideal etching depth while ensuring the etching morphology. The material of the mask 3 may specifically include photoresist, metal or optical media materials. For example, the material of the mask plate 3 provided in the embodiment of the present invention may be chromium. Depending on the shape of the grating-like structure metal electrode that needs to be prepared, mask plates 3 of different shapes can be used.

S102: Use IBE ion beam etching equipment to emit a first particle beam to etch the metal layer under the cover of the mask plate at a first angle to obtain a metal electrode with a rough grating-like structure.

In the embodiment of the present invention, IBE technology can be used to etch the metal layer 2. Ion beam etching technology (Ion Beam Etching, IBE) is a dry etching process technology developed in the 1970s, which utilizes The energetic ions emitted by the ion source bombard the target material, causing sputtering on the surface of the material to remove the material. The purely physical bombardment method shows great potential in the field of precious metal etching that is difficult to react. During the etching process, the etching gas is passed into the quartz cavity discharge chamber and is ionized by high-frequency waves excited by the radio frequency coil to generate plasma. The ions are extracted through the grid, focused into a beam, and then neutralized by the electrons emitted by the neutralizer into an electrically neutral particle beam with a certain energy, which bombards the wafer surface on the stage to achieve etching. Ion beam etching technology has become an important high-precision pattern transfer in the production process of micro-nanostructures of diffractive optical elements because of its good anisotropy, low surface damage, independent control of etching parameters and ability to etch any material. Technology.

IBE ion beam etching equipment can be used to emit a first particle beam to etch the metal layer 2 under the cover of the mask plate 3 at a first angle to obtain a roughly etched metal electrode with a grating-like structure. That is, in the embodiment of the present invention, you can first use The metal layer 2 is etched at a small angle to open part of the metal layer.

Referring to Figure 3, it is a schematic structural diagram after opening part of the metal layer 2 according to the embodiment of the present invention. The dotted line with an arrow is the first particle beam, and the angle A between it and the normal direction of the surface of the substrate 1 is the first angle. When using the first particle beam at the first angle to etch the metal layer 2, the downward etching to open the metal layer 2 and the de-deposition are performed simultaneously. While gradually opening the metal layer 2, it is ensured that repeated deposition of metal will not affect the steepness. Thus, a nearly vertical morphology of the metal layer 2 is obtained.

In a possible implementation, the first angle can be set to be greater than or equal to 0° and less than or equal to 20°, and the energy of the first particle beam can be greater than or equal to 200V and less than or equal to 800V to open the metal layer 2 by preliminary etching. , to obtain a metal electrode with a rough grating-like structure. As shown in Figure 4, the angle between the side wall of the metal layer 2 of the metal electrode with a rough grating-like structure and the substrate 1 is θ1.

In a possible implementation, in order to obtain the first particle beam, the first etching gas can be passed into the discharge chamber to obtain the first plasma beam, and a neutralizer is used to neutralize the first plasma beam to electrical neutrality. To obtain the first particle beam, specifically, the first etching gas provided by the embodiment of the present invention may include at least one of fluorine-based gas, nitrogen and inert gas, for example, it may include CHF3, CF4, SF6, Ar, _N2 At least one of the etching gases. When the first etching gas includes two or more gases, the ratio between the various types of etching gases can be adjusted by those skilled in the art according to actual conditions.

The particle beam provided by the embodiment of the present invention has a chemical reaction function and a certain physical bombardment function. When the particle beam interacts with the metal layer 2, physical and chemical reactions will occur simultaneously. By adjusting the energy of the particle beam (Beam Voltage, BMV) The bombardment intensity, reaction rate, etc. can be adjusted. In one possible implementation, the energy of the first particle beam is greater than or equal to 200V and less than or equal to 800V.

S103: Use the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode under the cover of the mask plate at a second angle to obtain the final grating-like structure metal electrode; The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is the angle between the second particle beam and the substrate surface. The angle formed by the normal direction of the substrate surface.

In the embodiment of the present invention, in order to improve the regularity of the metal electrode with a grating-like structure and reduce the roughness of its surface, IBE technology can be used to continue etching the metal layer 2. At this time, a large angle, that is, the second angle is used Etching is performed, and the top of the metal layer 2 is first modified using the shielding of the mask 3 . When the mask 3 is gradually consumed, the second particle beam can gradually etch to the bottom of the metal layer 2 . In this way, the side wall metal contamination produced by small-angle etching is effectively removed, and at the same time, metal side walls with special angles can be formed due to the difference in etching time between the top and bottom of the metal layer 2 .

When the incident angle of the second particle beam is selected appropriately so that the second particle beam is etched just to the junction of the metal layer 2 and the mask plate 3, as the mask plate 3 is consumed, the etched area of the metal layer 2 increases. . Since at a large angle, there is a difference between the rate of the metal layer 2 in the etching area and that at a small angle, an angular turning will be formed at the interface of etching/non-etching, and the main etching formation angle θ1 > the modification formation angle θ2, as shown in Figure 5.

The etching of the metal layer 2 can continue. When the sidewall modification time of the second particle beam on the metal layer 2 continues to increase and the aspect ratio of the mask 3 is moderate, a metal electrode with a grating-like structure will be formed. As shown in Figure 6, the metal and masks on both sides are continuously consumed, and the second particle beam continues to etch the metal layer 2 under the cover of the mask plate 3 at a second angle. The oblique arrow in Figure 6 indicates the second particle beam. , the angle B formed by it and the normal direction of the surface of the substrate 1 is the second angle.

The second particle beam at the second angle is used to continuously etch the metal layer 2, and the metal and the mask on both sides are continuously consumed until it shrinks to a point. In one possible implementation, due to the influence of IBE rotation, the overall performance of the metal layer 2 is: Pyramid-like lines, and showing an isosceles triangle shape in the cross-section, resulting in a final grating-like structure metal electrode with high regularity and small surface roughness, as shown in Figure 7. In a possible implementation, the final grating-like structure metal electrode provided by the embodiment of the present invention can also have an isosceles trapezoidal cross-section, which can be adjusted by those skilled in the art according to the actual situation. The embodiment of the present invention is here No specific limitation is made.

In a possible implementation, the second angle can be set to be greater than or equal to 50° and less than or equal to 800°, and the energy of the second particle beam can be greater than or equal to 200V and less than or equal to 800V to etch the rough grating-like structure. The metal electrode obtains the final grating-like structure metal electrode.

Optionally, the bias voltage for accelerating the first particle beam and the second particle beam may be 80V.

In a possible implementation, in order to obtain the second particle beam, the second etching gas can be passed into the discharge chamber to obtain the second plasma beam, and a neutralizer is used to neutralize the second plasma beam to electrical neutrality. To obtain the second particle beam, specifically, the second etching gas provided by the embodiment of the present invention may include at least one of fluorine-based gas, nitrogen and inert gas, for example, may include CHF3, CF4, SF6, Ar, _N2 At least one of the etching gases. When the second etching gas includes two or more gases, the ratio between the various types of etching gases can be adjusted by those skilled in the art according to actual conditions.

The particle beam provided by the embodiment of the present invention has a chemical reaction function and a certain physical bombardment function. When the particle beam interacts with the metal layer 2, physical and chemical reactions will occur simultaneously. The bombardment intensity, reaction rate, etc. can be adjusted by adjusting the energy (Beam Voltage, BMV) of the particle beam. In one possible implementation, the energy of the second particle beam is greater than or equal to 200V and less than or equal to 800V, depending on the required time. corrosion rate, and the properties of the material itself.

Embodiments of the present invention provide a method for manufacturing a metal electrode with a grating-like structure. The method includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit a first particle beam at a first angle on the mask. The metal layer is etched under the cover of the mask plate to obtain a metal electrode with a rough grating-like structure. The IBE ion beam etching equipment is used to emit a second particle beam at a second angle to etch the metal electrode with a rough grating-like structure under the cover of the mask plate. To obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, and the second angle is the angle between the second particle beam and the normal direction of the substrate surface Angle. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining the final type with regular morphology and low roughness. Grating structure metal electrode.

Example structure

Embodiments of the present invention also provide a grating-like structure metal electrode, including the final grating-like structure metal electrode manufactured using the above method.

In a possible implementation, the final grating-like structure metal electrode has an isosceles triangle shape in cross-section, as shown in Figure 7 .

Embodiments of the present invention provide a metal electrode with a grating-like structure. A method for manufacturing the structure includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit a first particle beam at a first angle. The metal layer is etched under the cover of the mask to obtain a metal electrode with a roughly grating-like structure. The IBE ion beam etching equipment is used to emit a second particle beam at a second angle on the mask. The metal electrode with a grating-like structure is etched roughly under cover to obtain the final metal electrode with a grating-like structure. The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is The angle between the second particle beam and the normal direction of the substrate surface. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining the final type with regular morphology and low roughness. Grating structure metal electrode.

Each embodiment in this specification is described in a progressive manner. The same and similar parts between the various embodiments can be referred to each other. Each embodiment focuses on its differences from other embodiments. In particular, for the structural embodiment, since it is basically similar to the method embodiment, the description is relatively simple. For relevant details, please refer to the partial description of the method embodiment.

The above are only preferred embodiments of the present invention. Although the present invention has been disclosed above with preferred embodiments, they are not intended to limit the present invention. Any person familiar with the art can make many possible changes and modifications to the technical solution of the present invention using the methods and technical content disclosed above without departing from the scope of the technical solution of the present invention, or modify it into equivalent changes. Example. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the protection scope of the technical solution of the present invention.

S101, S102, S103: Method

Claims (20)

A method for manufacturing metal electrodes with a grating-like structure, which is characterized by including: Provide a sequentially stacked substrate, metal layer and mask; Using IBE ion beam etching equipment to emit a first particle beam to etch the metal layer under the cover of the mask plate at a first angle to obtain a roughly engraved grating-like structure metal electrode; Using the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode at a second angle under the cover of the mask plate to obtain the final grating-like structure metal electrode; The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is the angle between the second particle beam and the substrate surface. The angle formed by the normal direction of the substrate surface. The method of claim 1, wherein the first angle is greater than or equal to 0° and less than or equal to 20°. The method of claim 1, wherein the second angle is greater than or equal to 50° and less than or equal to 80°. The method according to claim 1, further comprising obtaining the first particle beam in advance through the following steps: The first etching gas is introduced into the discharge chamber to obtain the first plasma beam, and a neutralizer is used to neutralize the first plasma beam to electrical neutrality to obtain the first particle beam. The method according to claim 1, further comprising obtaining the second particle beam in advance through the following steps: The second etching gas is introduced into the discharge chamber to obtain the second plasma beam, and the neutralizer is used to neutralize the second plasma beam to electrical neutrality to obtain the second particle beam. The method according to claim 4, wherein the first etching gas includes: At least one of fluorine-based gas, nitrogen gas and inert gas. The method of claim 5, wherein the second etching gas includes: At least one of fluorine-based gas, nitrogen gas and inert gas. The method according to claim 1, wherein the material of the metal layer includes: Precious metals or precious metal alloys. The method of claim 1, wherein the energy of the first particle beam is greater than or equal to 200V and less than or equal to 800V. The method of claim 1, wherein the energy of the second particle beam is greater than or equal to 200V and less than or equal to 800V. The method according to claim 1, wherein the material of the mask plate includes: Photoresist, metal or optical media materials. The method according to claim 1, wherein the material of the substrate includes: At least one of silicon oxide, silicon nitride or silicon oxynitride. The method of claim 11, wherein the material of the mask plate includes chromium. The method according to claim 4, wherein the first etching gas includes: At least one of CHF3, CF4, SF6, Ar, and N2. The method of claim 5, wherein the second etching gas includes: At least one of CHF3, CF4, SF6, Ar, and N2. The method of claim 1, wherein the bias voltage of the IBE ion beam etching equipment for accelerating the first particle beam includes 80V. The method of claim 1, wherein the bias voltage of the IBE ion beam etching equipment for accelerating the second particle beam includes 80V. A metal electrode with a grating-like structure is characterized by including: The final grating-like structure metal electrode manufactured using the method described in any one of claims 1 to 17. The electrode according to claim 18, wherein the final grating-like structure metal electrode has an isosceles triangle shape in cross-section. The electrode of claim 18, wherein the final grating-like structure metal The cross section of the electrode has an isosceles trapezoidal shape.

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