WO2023207053A1

WO2023207053A1 - Method for manufacturing metal electrode having grating-like structure, and electrode

Info

Publication number: WO2023207053A1
Application number: PCT/CN2022/133458
Authority: WO
Inventors: 王耀; 彭泰彦; 蒋中原; 杨宇新; 许开东
Original assignee: 江苏鲁汶仪器有限公司
Priority date: 2022-04-24
Filing date: 2022-11-22
Publication date: 2023-11-02
Also published as: TW202343564A; CN116988065A

Abstract

The present application provides a method for manufacturing a metal electrode having a grating-like structure, and an electrode. The method comprises: using an ion beam etching (IBE) device to emit a first particle beam to etch a metal layer at a first angle under the shielding of a mask, so as to obtain a coarse-etched metal electrode having a grating-like structure, and using the IBE device to emit a second particle beam to etch, at a second angle, under the shielding of the mask, the coarse-etched metal electrode having a grating-like structure, so as to obtain a final metal electrode having a grating-like structure. That is, small-angle etching can be used first to initially open the metal layer to obtain the coarse-etched metal electrode having a grating-like structure, large-angle etching can then be used to modify the top of the metal layer in advance by using the shielding of the mask, and when the mask is gradually consumed, the particle beams can gradually etch to the bottom of the metal layer. In this way, sidewall metal contamination generated by the small-angle etching is effectively removed, and meanwhile, a metal sidewall at a special angle can be formed due to the etching time difference between the top and bottom of the metal layer, so as to obtain the final metal electrode having a grating-like structure, regular morphology, and low roughness.

Description

A kind of grating-like structure metal electrode manufacturing method and electrode

This application claims priority to the Chinese patent application submitted to the State Intellectual Property Office of China on April 24, 2022, with the application number 202210452055.0 and the invention title "A method for manufacturing a metal electrode with a grating structure and an electrode", the entire content of which is incorporated by reference. incorporated in this application.

Technical field

The present application relates to the field of semiconductor technology, and in particular to a method for manufacturing a metal electrode with a grating-like structure and an electrode.

Background technique

In the integrated circuit (IC, integrated circuit) or microelectronics industry, precious metal films such as silver and gold have shown great potential in forming metal electrodes due to their low resistivity and good electromigration resistance. However, due to the volatilization of these precious metals Due to limited properties, it is difficult to form a metal electrode with a grating-like structure with good morphology through reactive plasma etching. Similarly, wet etching technology also has problems with irregular etching morphology and high roughness.

Therefore, how to improve the regularity and reduce the roughness of manufactured metal electrodes with a grating-like structure is a technical problem that needs to be solved in this field.

Contents of the invention

In view of this, the purpose of this application is to provide a method and electrode for manufacturing a metal electrode with a grating-like structure, which can produce a metal electrode with a grating-like structure at a specific angle, with high morphological regularity and small roughness.

In order to achieve the above purpose, this application has the following technical solutions:

In the first aspect, embodiments of the present application provide a method for manufacturing a metal electrode with a grating-like structure, including:

Provide a sequentially stacked substrate, metal layer and mask;

Using IBE ion beam etching equipment to emit a first particle beam to etch the metal layer under the cover of the mask at a first angle to obtain a roughly engraved grating-like structure metal electrode;

Using the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode at a second angle under the cover of the mask to obtain the final grating-like structure metal electrode;

The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is the angle between the second particle beam and the substrate surface. The angle formed by the normal direction of the substrate surface.

In a possible implementation, the first angle is greater than or equal to 0° and less than or equal to 20°, and the second angle is greater than or equal to 50° and less than or equal to 80°.

In a possible implementation, the method further includes obtaining the first particle beam and the second particle beam in advance through the following steps:

Passing the first etching gas into the discharge chamber to obtain the first plasma beam, using a neutralizer to neutralize the first plasma beam to electrical neutrality to obtain the first particle beam;

The second etching gas is introduced into the discharge chamber to obtain the second plasma beam, and the neutralizer is used to neutralize the second plasma beam to electrical neutrality to obtain the second particle beam.

In a possible implementation, the first etching gas and the second etching gas include:

At least one of fluorine-based gas, nitrogen gas and inert gas.

In a possible implementation, the material of the metal layer includes:

Precious metals or precious metal alloys.

In a possible implementation, the energy of the first particle beam and the second particle beam is greater than or equal to 200V and less than or equal to 800V.

In a possible implementation, the material of the mask includes:

Photoresist, metal or optical media materials.

In a possible implementation, the material of the substrate includes:

At least one of silicon oxide, silicon nitride or silicon oxynitride.

In a second aspect, embodiments of the present application provide a metal electrode with a grating-like structure, including the final metal electrode with a grating-like structure manufactured using the method described above.

In a possible implementation, the final grating-like structure metal electrode has an isosceles triangle shape in cross section.

Compared with the existing technology, this application has the following beneficial effects:

Embodiments of the present application provide a method and structure for manufacturing a metal electrode with a grating-like structure. The method includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit a first particle beam at a first angle. The metal layer is etched under the cover of the mask to obtain a metal electrode with a rough grating-like structure. The IBE ion beam etching equipment is used to emit a second particle beam at a second angle to etch the rough grating-like structure under the cover of the mask. Metal electrode to obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, the second angle is the normal direction between the second particle beam and the substrate surface the angle formed. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining a regular morphology and low roughness. The final grating-like structure metal electrode.

Description of the drawings

In order to more clearly explain the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are: For some embodiments of the present application, those of ordinary skill in the art can also obtain other drawings based on these drawings without exerting creative efforts.

Figure 1 shows a flow chart of a method for manufacturing a metal electrode with a grating-like structure provided by an embodiment of the present application;

Figure 2 shows a schematic diagram of a sequentially stacked substrate, metal layer and mask for preparing a metal electrode with a grating-like structure provided by an embodiment of the present application;

Figure 3 shows a schematic diagram of the structure in the process of preparing a metal electrode with a grating-like structure provided by an embodiment of the present application;

Figure 4 shows a schematic diagram of another structure in the process of preparing a metal electrode with a grating-like structure provided by an embodiment of the present application;

Figure 5 shows a schematic diagram of another structure in the process of preparing a metal electrode with a grating-like structure provided by the embodiment of the present application;

Figure 6 shows a schematic diagram of another structure in the process of preparing a metal electrode with a grating-like structure provided by the embodiment of the present application;

FIG. 7 shows a schematic diagram of a metal electrode with a grating-like structure provided by an embodiment of the present application.

Detailed ways

In order to make the above objects, features and advantages of the present application more obvious and easy to understand, the specific implementation modes of the present application will be described in detail below with reference to the accompanying drawings.

Many specific details are set forth in the following description to fully understand the present application. However, the present application can also be implemented in other ways different from those described here. Those skilled in the art can do so without violating the connotation of the present application. Similar generalizations are made, and therefore the present application is not limited to the specific embodiments disclosed below.

As described in the background art, the applicant's research has found that in the integrated circuit (IC, integrated circuit) or microelectronics industry, precious metal films such as silver and gold have low resistivity and good electromigration resistance when forming grating-like films. Structural metal electrodes have shown great potential. However, due to the limited volatility of these precious metals, it is difficult to form grating-like structural metal electrodes with good morphology through reactive plasma etching. Similarly, there are also problems with wet etching technology. The corrosion morphology is irregular and the roughness is high.

Specifically, if post-precious metal deposition etching can replace the current Damascene model, the size effect in metallization may be reduced, favoring the formation of semiconductor chips. However, it is difficult to etch by reactive plasma at room temperature. For example, etching Ag and Au in chlorine-based plasma requires increasing the temperature or increasing the ion bombardment flux/energy, and there are problems such as serious lateral undercutting, inability to control the sidewall angle, and poor morphology; at the same time, wet etching We also face the same problem. It is difficult for inert precious metals to form soluble salts. Even if a small number of routes can be achieved, they still have inherent flaws. For example, in the semiconductor industry, iodine-potassium iodide-aqueous solution is commonly used to etch gold films. Although it can meet the requirements for uniformity and stability of the etching rate, after etching with iodine-potassium iodide-aqueous etching solution, the remaining electroplating The gold thin film has serious irregularities in the appearance of the gold layer and large roughness of the electroplated gold layer, which is not conducive to market application promotion and recognition.

In order to solve the above technical problems, embodiments of the present application provide a method and structure for manufacturing a metal electrode with a grating-like structure. The method includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit the first The particle beam is used to etch the metal layer under the cover of the mask at a first angle to obtain a rough grating-like structure metal electrode. The IBE ion beam etching equipment is used to emit a second particle beam to etch under the cover of the mask at a second angle. Roughly etching the grating-like structure metal electrode to obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, and the second angle is the second particle The angle between the beam and the normal direction of the substrate surface. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining a regular morphology and low roughness. The final grating-like structure metal electrode.

In order to better understand the technical solutions and technical effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

Example methods

Referring to Figure 1, this figure is a flow chart of a method for manufacturing a metal electrode with a grating-like structure provided by an embodiment of the present application. The method includes:

S101: Provide a sequentially stacked substrate, metal layer and mask.

Referring to Figure 2, a schematic diagram of a sequentially stacked substrate, metal layer and mask for preparing a metal electrode with a grating-like structure is provided in an embodiment of the present application. In the embodiment of the present application, the material of the substrate 1 can be It is a material with a slow etching rate that is basically close to 0 to prevent etching damage to the substrate 1 when etching the metal layer. Optionally, the material of the substrate 1 may include: silicon oxide, silicon nitride or nitrogen. At least one kind of silicon oxide is used. According to the specific differences in etching requirements, the substrate 1 can use different materials.

It should be noted that the dimensional parameters between the substrate 1, the metal layer 2 and the mask 3 can be set according to actual needs. The embodiments of the present application are not specifically limited here, and can be set by those skilled in the art according to the actual situation. Certainly.

In addition, since in order to form a metal electrode with a grating-like structure, the metal layer 2 needs to be etched, the application also includes a mask 3 provided on the side of the metal layer 2 away from the substrate 1. The material of the mask 3 is Materials with a slow etching rate that is basically close to 0 can achieve a high selectivity ratio of the metal layer 2 to the mask plate 3. A larger selectivity ratio can obtain an ideal etching depth while ensuring the etching morphology. The material of the mask 3 may specifically include photoresist, metal or optical media materials. For example, the material of the mask 3 provided in the embodiment of the present application may be chromium. Depending on the shape of the metal electrode with a grating-like structure that needs to be prepared, masks 3 of different shapes can be used.

S102: Use IBE ion beam etching equipment to emit a first particle beam to etch the metal layer under the cover of the mask at a first angle to obtain a metal electrode with a rough grating-like structure.

In the embodiment of the present application, IBE technology can be used to etch the metal layer 2. Ion beam etching technology (IBE, Ion Beam Etching) is a dry etching process technology developed in the 1970s. The energetic ions emitted by the ion source are used to bombard the target material, causing sputtering on the surface of the material to remove the material. The purely physical bombardment method shows great potential in the field of precious metal etching that is difficult to react. During the etching process, the etching gas is passed into the quartz cavity discharge chamber and is ionized by high-frequency waves excited by the radio frequency coil to generate plasma. The ions are extracted through the grid, focused into a beam, and then neutralized by the electrons emitted by the neutralizer into an electrically neutral particle beam with a certain energy, which bombards the wafer surface on the stage to achieve etching. Ion beam etching technology has become an important high-precision pattern transfer in the production process of micro-nanostructures of diffractive optical elements because of its good anisotropy, low surface damage, independent control of etching parameters and ability to etch any material. technology.

IBE ion beam etching equipment can be used to emit a first particle beam to etch the metal layer 2 under the cover of the mask 3 at a first angle to obtain a rough grating-like structure metal electrode. That is, in the embodiment of the present application, you can first use The metal layer 2 is etched at a small angle to open part of the metal layer.

Referring to Figure 3, it is a schematic structural diagram after opening part of the metal layer 2 according to the embodiment of the present application. The dotted line with an arrow is the first particle beam, and the angle A between it and the normal direction of the surface of the substrate 1 is the first angle. When using the first particle beam at the first angle to etch the metal layer 2, the downward etching to open the metal layer 2 and the de-deposition are performed simultaneously. While gradually opening the metal layer 2, it is ensured that repeated deposition of metal will not affect the steepness. Thus, a nearly vertical morphology of the metal layer 2 is obtained.

In a possible implementation, the first angle can be set to be greater than or equal to 0° and less than or equal to 20°, and the energy of the first particle beam can be greater than or equal to 200V and less than or equal to 800V to open the metal layer for preliminary etching. 2. Obtain a metal electrode with a rough grating-like structure. As shown in Figure 4, the angle between the side wall of the metal layer 2 of the metal electrode with a rough grating-like structure and the substrate 1 is θ1.

In a possible implementation, in order to obtain the first particle beam, the first etching gas can be passed into the discharge chamber to obtain the first plasma beam, and a neutralizer is used to neutralize the first plasma beam into electrical neutralization. property to obtain the first particle beam. Specifically, the first etching gas provided in the embodiment of the present application may include at least one of fluorine-based gas, nitrogen gas and inert gas. For example, it may include CHF3, CF4, SF6, Ar, N At least one of _2. When the first etching gas includes two or more gases, the ratio between various types of etching gases can be adjusted by those skilled in the art according to actual conditions.

The particle beam provided by the embodiment of the present application has a chemical reaction function and a certain physical bombardment function. When the particle beam interacts with the metal layer 2, physical and chemical reactions will occur simultaneously. By adjusting the energy of the particle beam (BMV, Beam Voltage) The bombardment intensity, reaction rate, etc. can be adjusted. In one possible implementation, the energy of the first particle beam is greater than or equal to 200V and less than or equal to 800V.

S103: Use the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode under the cover of the mask at a second angle to obtain the final grating-like structure metal electrode; The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is the angle between the second particle beam and the substrate surface. The angle formed by the normal direction of the substrate surface.

In the embodiment of the present application, in order to improve the regularity of the metal electrode with a grating-like structure and reduce the roughness of its surface, IBE technology can be used to continue etching the metal layer 2. At this time, a large angle, that is, the second angle is used Etching is performed, and the top of the metal layer 2 is first modified using the shielding of the mask 3 . When the mask 3 is gradually consumed, the second particle beam can gradually etch to the bottom of the metal layer 2 . In this way, the metal contamination on the side wall produced by etching at a small angle is effectively removed, and at the same time, a metal side wall with a special angle can be formed due to the difference in etching time between the top and bottom of the metal layer 2 .

When the incident angle of the second particle beam is selected appropriately so that the second particle beam is etched just to the junction of the metal layer 2 and the mask layer 3, as the mask layer 3 is consumed, the etched area of the metal layer 2 increases. . Since at a large angle, there is a difference between the rate of the metal layer 2 in the etching area and that at a small angle, an angle turning will be formed at the interface of etching/non-etching, and the main etching formation angle θ1 > the modification formation angle θ2, as shown in Figure 5.

The etching of the metal layer 2 can continue. When the sidewall modification time of the second particle beam on the metal layer 2 continues to increase and the aspect ratio of the mask 3 is moderate, a metal electrode with a grating-like structure will be formed. As shown in Figure 6, the metal and masks on both sides are continuously consumed, and the second particle beam continues to etch the metal layer 2 under the cover of the mask 3 at a second angle. The oblique arrow in Figure 6 indicates the second particle beam. , the angle B formed by it and the normal direction of the surface of the substrate 1 is the second angle.

The second particle beam at a second angle is used to continuously etch the metal layer 2, and the metal and the mask on both sides are continuously consumed until it shrinks to a point. In one possible implementation, due to the influence of IBE rotation, the overall performance of the metal layer 2 It is a pyramid-shaped line and exhibits an isosceles triangle morphology in the cross-section. The resulting metal electrode with a grating-like structure has high regularity and small surface roughness, as shown in Figure 7. In a possible implementation, the final grating-like structure metal electrode provided by the embodiment of the present application can also have an isosceles trapezoidal cross-section, which can be adjusted by those skilled in the art according to the actual situation. The embodiment of the present application is This is not specifically limited.

In a possible implementation, the second angle can be set to be greater than or equal to 50° and less than or equal to 800°, and the energy of the second particle beam can be greater than or equal to 200V and less than or equal to 800V to etch a rough grating. Structure metal electrode to obtain the final grating-like structure metal electrode.

Optionally, the bias voltage for accelerating the first particle beam and the second particle beam may be 80V.

In a possible implementation, in order to obtain the second particle beam, the second etching gas can be passed into the discharge chamber to obtain the second plasma beam, and a neutralizer is used to neutralize the second plasma beam into electrical neutralization. property to obtain the second particle beam. Specifically, the second etching gas provided in the embodiment of the present application may include at least one of fluorine-based gas, nitrogen gas and inert gas. For example, it may include CHF3, CF4, SF6, Ar, N At least one of _2. When the second etching gas includes two or more gases, the ratio between various types of etching gases can be adjusted by those skilled in the art according to actual conditions.

The particle beam provided by the embodiment of the present application has a chemical reaction function and a certain physical bombardment function. When the particle beam interacts with the metal layer 2, physical and chemical reactions will occur simultaneously. By adjusting the energy of the particle beam (BMV, Beam Voltage) The bombardment intensity, reaction rate, etc. can be adjusted. In one possible implementation, the energy of the second particle beam is greater than or equal to 200V and less than or equal to 800V, depending on the required etching rate and the characteristics of the material itself.

The embodiment of the present application provides a method for manufacturing a metal electrode with a grating-like structure. The method includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit a first particle beam at a first angle on the mask. The metal layer is etched under the cover of the mask to obtain a metal electrode with a rough grating-like structure. The IBE ion beam etching equipment is used to emit a second particle beam at a second angle to etch the metal electrode with a rough grating-like structure under the cover of the mask. To obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, and the second angle is the angle between the second particle beam and the normal direction of the substrate surface Angle. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining a regular morphology and low roughness. The final grating-like structure metal electrode.

Example structure

Embodiments of the present application also provide a grating-like structure metal electrode, including the final grating-like structure metal electrode manufactured using the above method.

In a possible implementation, the final grating-like structure metal electrode has an isosceles triangle shape in cross-section, as shown in Figure 7 .

Embodiments of the present application provide a metal electrode with a grating-like structure. The method for manufacturing the structure includes: providing a sequentially stacked substrate, a metal layer and a mask, and using IBE ion beam etching equipment to emit a first particle beam at a first angle. The metal layer is etched under the cover of the mask to obtain a metal electrode with a rough grating-like structure. The IBE ion beam etching equipment is used to emit a second particle beam at a second angle to etch the metal with a rough grating-like structure under the cover of the mask. electrode to obtain the final grating-like structure metal electrode, the first angle is smaller than the second angle, the first angle is the angle between the first particle beam and the normal direction of the substrate surface, the second angle is the angle between the second particle beam and the normal direction of the substrate surface angle. That is to say, by using the masking effect of the mask and the unique angular etching of IBE, you can first use a small angle etching to initially open the metal layer to obtain a rough grating-like structure metal electrode, and then use the mask's shielding at a large angle to etch the metal. The top of the layer is modified first, and as the mask is gradually consumed, the particle beam can gradually etch to the bottom of the metal layer. In this way, the sidewall metal contamination produced by small-angle etching can be effectively removed, and at the same time, metal sidewalls with special angles can be formed due to the etching time difference between the top and bottom of the metal layer, thereby obtaining a regular morphology and low roughness. The final grating-like structure metal electrode.

Each embodiment in this specification is described in a progressive manner. The same and similar parts between the various embodiments can be referred to each other. Each embodiment focuses on its differences from other embodiments. In particular, for the structural embodiment, since it is basically similar to the method embodiment, the description is relatively simple. For relevant details, please refer to the partial description of the method embodiment.

The above are only preferred embodiments of the present application. Although the present application has been disclosed above with preferred embodiments, they are not intended to limit the present application. Any person familiar with the art can make many possible changes and modifications to the technical solution of the present application by using the methods and technical content disclosed above, or modify it to equivalent changes without departing from the scope of the technical solution of the present application. Example. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present application that do not deviate from the content of the technical solution of the present application still fall within the scope of protection of the technical solution of the present application.

Claims

A method for manufacturing metal electrodes with a grating-like structure, which is characterized by including:

Provide a sequentially stacked substrate, metal layer and mask;

Using IBE ion beam etching equipment to emit a first particle beam to etch the metal layer under the cover of the mask at a first angle to obtain a roughly engraved grating-like structure metal electrode;

Using the IBE ion beam etching equipment to emit a second particle beam to etch the rough grating-like structure metal electrode at a second angle under the cover of the mask to obtain the final grating-like structure metal electrode;

The first angle is smaller than the second angle. The first angle is the angle between the first particle beam and the normal direction of the substrate surface. The second angle is the angle between the second particle beam and the substrate surface. The angle formed by the normal direction of the substrate surface.
The method of claim 1, wherein the first angle is greater than or equal to 0° and less than or equal to 20°.
The method of claim 1, wherein the second angle is greater than or equal to 50° and less than or equal to 80°.
The method according to claim 1, further comprising pre-obtaining the first particle beam through the following steps:

The first etching gas is introduced into the discharge chamber to obtain the first plasma beam, and a neutralizer is used to neutralize the first plasma beam to electrical neutrality to obtain the first particle beam.
The method according to claim 1, further comprising pre-obtaining the second particle beam through the following steps:

The second etching gas is introduced into the discharge chamber to obtain the second plasma beam, and the neutralizer is used to neutralize the second plasma beam to electrical neutrality to obtain the second particle beam.
The method of claim 4, wherein the first etching gas includes:

At least one of fluorine-based gas, nitrogen gas and inert gas.
The method of claim 5, wherein the second etching gas includes:

At least one of fluorine-based gas, nitrogen gas and inert gas.
The method according to claim 1, characterized in that the material of the metal layer includes:

Precious metals or precious metal alloys.
The method of claim 1, wherein the energy of the first particle beam is greater than or equal to 200V and less than or equal to 800V.
The method of claim 1, wherein the energy of the second particle beam is greater than or equal to 200V and less than or equal to 800V.
The method according to claim 1, characterized in that the material of the mask includes:

Photoresist, metal or optical media materials.
The method according to claim 1, wherein the material of the substrate includes:

At least one of silicon oxide, silicon nitride or silicon oxynitride.
The method of claim 11, wherein the mask material includes chromium.
The method of claim 4, wherein the first etching gas includes:

At least one of CHF3, CF4, SF6, Ar, and N2.
The method of claim 5, wherein the second etching gas includes:

At least one of CHF3, CF4, SF6, Ar, and N2.
The method according to claim 1, wherein the bias voltage of the IBE ion beam etching equipment for accelerating the first particle beam includes 80V.
The method according to claim 1, wherein the bias voltage of the IBE ion beam etching equipment for accelerating the second particle beam includes 80V.
A metal electrode with a grating-like structure is characterized by including:

The final grating-like structure metal electrode manufactured using the method of any one of claims 1-17.
The electrode according to claim 18, wherein the final grating-like structure metal electrode has an isosceles triangle shape in cross section.
The electrode according to claim 18, wherein the final grating-like structure metal electrode has an isosceles trapezoidal cross-section.