JPS5918643A - Formation of mask pattern - Google Patents
Formation of mask patternInfo
- Publication number
- JPS5918643A JPS5918643A JP12797882A JP12797882A JPS5918643A JP S5918643 A JPS5918643 A JP S5918643A JP 12797882 A JP12797882 A JP 12797882A JP 12797882 A JP12797882 A JP 12797882A JP S5918643 A JPS5918643 A JP S5918643A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- substrate
- mask
- lift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 238000001259 photo etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ） 発すＪの技術分野
本発明は張出し部をもつマスクパターンの形成方法に．
関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method of forming a mask pattern having an overhang.
related.
（ｂ） 技術の背景
半導体Ｉ Ｃ、バブルメモリ、弾性表面波フィルタなど
の微卸１回路はそれぞれ半導体、磁性体、弥誘電体単結
晶上に薄膜形成技術と写真蝕刻技術（ホトリソグランイ
）とを用いて１ａ細バクーンの形成が行われている。(b) Background of the technology Microcircuits such as semiconductor ICs, bubble memories, and surface acoustic wave filters are manufactured using thin film formation technology and photolithography on semiconductors, magnetic materials, and dielectric single crystals, respectively. Formation of 1a thin Bakun is being carried out.
こ工で写真蝕刻はホトエツチングと呼ばれ、被処理基板
上にスピンコート法、スプレイｄｉ’ｌｘトによりホト
レジスト被覆し、これにマスクを通して近紫外線，遠紫
外線を拙射するか戒は１ｔ１接に電子線を掃引して感光
せしめ、感光部が露光により変質−ｔることを利用して
現像し、ホトレジス１・」二に微細パターンを形成する
ものである。In this process, photo-etching is called photo-etching, and the substrate to be processed is coated with photoresist by spin coating or spray di'lxt, and then near-ultraviolet and far-ultraviolet rays are emitted through a mask, or electrons are directly applied to the substrate. A fine pattern is formed on the photoresist 1 and 2 by exposing the photoresist by sweeping a line and developing the photoresist by taking advantage of the change in quality of the exposed area due to exposure.
すなわちホトレジストは光照射によっ′〔重合或は分解
が行われ現像液に対して溶解度の差異を生じ、これ釦よ
りパターンな形成するものであるが、このパターン形成
の形として光拙射部がｆＪｌ．像液に不溶となるネガ型
と不溶となるポジ型に分類される。In other words, when photoresist is irradiated with light, it undergoes polymerization or decomposition, resulting in a difference in solubility in the developing solution, which forms a pattern. fJl. It is classified into negative type, which is insoluble in the image solution, and positive type, which is insoluble.
次に写真蝕刻技術（以下ホトエツチング）にはパターン
形成すべき金属薄膜を被処理基板上に予め形成しておき
、この上にホトレジストを被覆してホトエツチングする
方法と、被処理基板上の全面忙ホトレジストを被覆し、
これ忙ホトエツチングを施して必要なパターンの窓明け
をし、次忙金属薄膜を全面に形成し、ホトレジストを溶
解してパターンの形成を行うリフトオフ法がある。こ〜
で後者のリフトオフ法は被処理基板上に形成される薄膜
材料がエツチングし難い材料（例えば白金）などからな
る場合やパターンが微細で精度を要するものなどの場合
に適している。Next, photo-etching technology (hereinafter referred to as photo-etching) involves forming a metal thin film to be patterned on the substrate to be processed in advance, coating this with photoresist and photo-etching it, and another method in which a thin metal film to be patterned is formed on the substrate to be processed and then photo-etched. coated with
There is a lift-off method in which a necessary pattern is opened by photo-etching, a metal thin film is then formed on the entire surface, and the photoresist is dissolved to form a pattern. child~
The latter lift-off method is suitable when the thin film material formed on the substrate to be processed is made of a material that is difficult to etch (for example, platinum) or when the pattern is fine and requires precision.
本発明はリフトオフ法の改良に関するものである。The present invention relates to improvements in the lift-off method.
（Ｃ） 従来技術と問題点
り７トオフ法は基板上に設けられた微細パターンの窓明
けが行われているレジス）膜ＩＣＪＪし、蒸着法など圧
より金属或は非金属からなる薄膜を全面に形成し、その
後レジストを除去することにより窓明は部の薄膜パター
ンを残すものである。このりストオフ法が行われるため
には薄膜形成後のレジスト剥離工程において剥離液とレ
ジストとの濡れが良いことが必要である。(C) Conventional technology and problems 7 The to-off method is a resist (ICJJ) film in which a window is opened in a fine pattern provided on a substrate, and a thin film made of metal or non-metal is coated over the entire surface using pressure such as vapor deposition. The resist is then removed to leave a thin film pattern in the window area. In order for this resist-off method to be performed, it is necessary that the stripping solution and the resist be well wetted in the resist stripping step after forming the thin film.
そこでリフトオフ法が適用される條件としてレジストの
窓明は部に、形成された薄膜に段差があってレジストの
断面が露出しているか或は少くとも薄膜が切れているこ
とが必要である。Therefore, as a condition for applying the lift-off method, it is necessary that the formed thin film has a step in the resist window so that the cross section of the resist is exposed, or at least that the thin film is cut.
第１図（ト）〜（ｌＩ）は一般に行われているリフトオ
フ法の工程な説明する断面図である。FIGS. 1(g) to 1(l) are cross-sectional views illustrating the steps of the commonly used lift-off method.
すなわち１囚で示す被処理基板１の上にスピンコード法
などにより厚さ１〜２〔μｍ〕のレジスト膜２を形成す
る（図Ｂ）次忙マスク３を通じて近紫外線、遠紫外線或
は電子線などの光４を露光しく図Ｃ）、次に現像を行５
と、この実施例においてはネガ型レジストを用いている
ので光照射部５が不溶となり必要とするパターン６が窓
明けされる（図１） ） 、、次に真空蒸着法など釦よ
り全面圧パターンを形成すべき材料７を形成する（図Ｅ
）と、段差部８においてはレジスト２が露出しているの
で、基板をレジスト剥離液に浸漬するとレジスト２が溶
解すること忙より薄膜パターン９が形成される（図Ｆ）
。That is, a resist film 2 with a thickness of 1 to 2 [μm] is formed on a substrate 1 to be processed, shown in Figure 1, by a spin code method or the like (Figure B). Expose to light 4 (Figure C), then develop in line 5
Since a negative resist is used in this example, the light irradiation area 5 is insoluble and the necessary pattern 6 is opened (Fig. 1). Next, the entire surface pressure pattern is formed using a vacuum evaporation method using a button. form the material 7 to be formed (Fig. E
), the resist 2 is exposed at the stepped portion 8, so when the substrate is immersed in a resist stripping solution, the resist 2 is dissolved and a thin film pattern 9 is formed (Figure F).
.
か〜るリフトオフ法が有効に働くためＫはパターン形成
材料７が薄く、段差部８においてレジスト２が露出して
いることが必要である。In order for such a lift-off method to work effectively, it is necessary that the pattern forming material 7 of K is thin and that the resist 2 is exposed at the stepped portions 8.
然し乍ら第２図に示すようにパターン形成材料７が厚く
形成されていたり、或はホトエツチング後のレジスト膜
１０が梯状に形成さｔすると、パターン形成材料７が基
板１の全面を覆って形成されて、レジスト剥離液がレジ
ストと接触する余地がなく、従ってリフトオフ法を適用
するのは容易ではない。However, if the pattern forming material 7 is formed thickly as shown in FIG. 2, or if the resist film 10 after photoetching is formed in a ladder shape, the pattern forming material 7 will be formed covering the entire surface of the substrate 1. Therefore, there is no room for the resist stripping solution to come into contact with the resist, and therefore it is not easy to apply the lift-off method.
そこでリフトオフ法が適用できる條件としてはレジスト
膜２が厚いこと或はパターン形成Ｕ料７が薄（形成され
、外部応力（超音波等）忙よってパターンエッヂが破壊
されることが必要であり、今までこれらの條件な満て場
合に限り、リフトオフ法が用いられていた。Therefore, the conditions under which the lift-off method can be applied are that the resist film 2 is thick, or that the pattern forming U material 7 is thin (formed), and that the pattern edges are destroyed by external stress (ultrasonic waves, etc.). Until recently, the lift-off method was used only when these conditions were met.
然し乍ら白金（Ｐｔ）など不溶性金ＩＪ４に対して従来
のホトエツチングを行うことは難しく、また高い精度で
金属パターンなどを形成するＫはリフトオフ法が適して
いる。However, it is difficult to perform conventional photoetching on insoluble gold IJ4 such as platinum (Pt), and the lift-off method is suitable for K to form metal patterns with high precision.
そこで最近これらの問題を解決する方法が発表された。Recently, a method to solve these problems has been announced.
（Ｍ 、 Ｈａｔｊａｋｉｓ、 Ｂ、Ｊ 、Ｃａｎａｖ
ｅｌｌｏ 。(M, Hatjakis, B, J, Canav
Hello.
Ｊ、Ｍ、 Ｓｈａｗ ＩＢＭ Ｊ、 ＲＪ３Ｓ、
ＤＥＶＥＬＯＰ２４．４５２ （１９８０）
第３図はこの説明図であってレジストの窓明は部にレジ
ストの張出し部（オーバーバンク）を設けろものである
。J, M, Shaw IBM J, RJ3S,
DEVELOP 24.452 (1980) FIG. 3 is an explanatory diagram of this, in which a resist overbank is provided at the resist window.
すなわちリフトオフ法が行われるためにはパターン形成
材料を例えば金属としこれを蒸着法で形成するとすると
、これがレジストの窓明は部１１における段差部８で不
連続状態で形成されていることが必要であり、そのため
にはレジストの張り出し部を設ければよい。この奉献に
挙げられた方法はＡＺタイプのポジ型レジスト（ＡＺ１
３５０Ｊ）Ｉ２を被処理基板上の上釦被覆したる後露光
を行うがこの前或は後にクロロベンゼンに浸漬処理する
ことによって表面層部分に残存しているレジストの溶媒
（シンナー）および低分子量のレジストを溶解除去して
レジスト膜を変質させることによりこの部分の現像液（
ＡＺ現像液と水との１：１稀 液）に対する溶解度を下
げ、その結果として張出し部を実現するものである。In other words, in order to carry out the lift-off method, if the pattern forming material is, for example, metal and is formed by vapor deposition, the resist windows must be formed discontinuously at the stepped portions 8 in the portions 11. For this purpose, an overhanging portion of the resist may be provided. The method mentioned in this dedication is AZ type positive resist (AZ1
350J) After coating I2 on the top button of the substrate to be processed, exposure is performed, but before or after this, immersion treatment in chlorobenzene removes the solvent (thinner) of the resist remaining on the surface layer portion and the low molecular weight resist. The developing solution (
This method lowers the solubility in a 1:1 diluted solution of AZ developer and water, thereby creating an overhang.
すなわち第３図において変質処理した表面層１３の部分
の溶解度が無処理部分１４より劣るために張出し部（オ
ーバーハング）が実現されることになる。That is, in FIG. 3, the solubility of the portion of the surface layer 13 subjected to the alteration treatment is inferior to that of the untreated portion 14, resulting in an overhang.
然し乍らこの方法は単層のレジストで行われているため
張出し部の下面より被処理基板面までσ）間隔が狭く、
数層からなる導体層パターンをり７トオフ法で形成する
ような要求に対してはこの方法の施行は困難であった。However, since this method is performed using a single layer of resist, the distance σ) from the bottom surface of the overhang to the surface of the substrate to be processed is narrow.
It has been difficult to implement this method in response to a request to form a conductor layer pattern consisting of several layers by the seven-off method.
（ｄ） 発明の目的
本発明は張出し部の下面より下地基板面までの高さが充
分あり、厚いパターン形成劇料の形成に対しても適用が
可能なリフトオフによるレジストパターンの形成方法を
提供することを目的とする。(d) Purpose of the Invention The present invention provides a method for forming a resist pattern by lift-off, which has a sufficient height from the lower surface of the overhang to the surface of the underlying substrate and can be applied to the formation of thick pattern forming material. The purpose is to
（ｅ） 発明の構成
本発明の目的は基板上に露光されたポジ型レジスト膜を
形成し、更に該ポジ型レジスト膜上にネガ型レジスト膜
を形成し、該ネガ型レジスト膜をバターニングして第１
の開口を形成し、該第１の開口が形成されたネガ型レジ
スト膜をマスクとして前記ポジ型レジスト膜を現像処理
し、前記ポジ型レジスト膜に前記第１の開口より広い面
積を有する第２の開口を形成することにより連成される
。(e) Structure of the Invention The object of the present invention is to form a positive resist film exposed to light on a substrate, further form a negative resist film on the positive resist film, and buttering the negative resist film. First
the positive resist film is developed using the negative resist film in which the first opening is formed as a mask, and a second opening having a larger area than the first opening is formed in the positive resist film. is coupled by forming an aperture.
（ｆ） 発明の実施例
本発明はレジスト膜を張出し部となるネガ型レジストと
その下のポジ型レジストとの２層構造とするととＫより
下地基板まで充分な高さをもつレジストパターンを形成
するものである。第４図は本発明に係る工程の説明図で
あり、以下これより本発明を説明する。(f) Embodiments of the Invention The present invention provides a resist pattern having a sufficient height from K to the underlying substrate when the resist film has a two-layer structure consisting of a negative resist serving as an overhang and a positive resist underneath. It is something to do. FIG. 4 is an explanatory diagram of the process according to the present invention, and the present invention will be explained below.
まず図（ト）で示すよ５に基板１の上にポジ型レジスト
１５（この実施例）場合、ＡＺ−１３５０Ｊ）を従来の
方法で被覆し全面に互って近紫外線４を照射し現像液（
この場合ＡＺ現像液Ｍに’ −３１２）Ｋ可溶な状態と
する。First, as shown in Figure (G) 5, a positive resist 15 (in this example, AZ-1350J) is coated on the substrate 1 by the conventional method, the entire surface is irradiated with near ultraviolet rays 4, and a developer is applied. (
In this case, '-312)K is soluble in AZ developer M.
なおポジ型レジスト１５の厚さは後で形成するパターン
形成材料の厚さ忙依存して変化するが１〜３〔μｍ〕で
ある。The thickness of the positive resist 15 varies depending on the thickness of the pattern forming material to be formed later, but is 1 to 3 [μm].
次にこの上にネガ型レジスト１６（この場合ＯＭＲ−８
５）を０．５〜Ｉ Ｃａｍ ） ｆ）Ｊｌ サＫ 従来
ノ方法で被覆する（Ｂ図）。Next, apply a negative resist 16 (in this case OMR-8) on top of this.
5) is coated with 0.5 to I Cam ) f) Jl SaK in a conventional manner (Figure B).
次にマスク３を通して近紫外線４を照射し、ネガ型レジ
スト１６を感光させ（６図）、次忙キシレン或はトリク
ロールエチレンで現像を行い、光の非照射部分のネガ型
レジスト１６を８８してパターンを形成する（Ｄ図）。Next, near ultraviolet rays 4 are irradiated through the mask 3 to expose the negative resist 16 (Fig. 6), followed by development with xylene or trichlorethylene, and the areas not irradiated with light are exposed to the negative resist 16. to form a pattern (Figure D).
こ工でネガ型レジ２ト専用の現像液？用いずキシレンな
どを使用する理由は専用の現像液を使用すると非照射部
分のネガ型レジスト１６のみならずその下のポジ型レジ
スト１５までも酊解してしまうことによる。Is this a special developer for negative type resist 2? The reason why xylene or the like is used instead of using a special developer is that if a special developer is used, not only the negative resist 16 in the non-irradiated area but also the positive resist 15 below it will be intoxicated.
次妃ネガ型レジスト１６（ＯＭ几−８５ルマスクとして
既に全面露光により可溶性となっているポジ型レジスト
１５ （ＡＺ−１３５０Ｊ）をＡＺ抗偉液（ＭＰ−３１
２） を用いて溶解させるが、この場合浸漬時間を調
整するとと産より任意の張出し長をもつレジストパター
ンを作ることができる（Ｅ図）。The positive resist 15 (AZ-1350J), which has already become soluble due to full-surface exposure as a OM-85 mask, was mixed with AZ anti-fouling liquid (MP-31).
2) In this case, by adjusting the dipping time, it is possible to create a resist pattern with an arbitrary overhang length (Figure E).
なお金属などの薄膜パターンの形成法としては（Ｆ図）
ＩＣ示すようにカちる張出し部をもつレジストパターン
の全面に真空蒸発法などにより薄膜１７を形成し、次に
剥離剤を用いて両種のレジス）１５．１６を除去するこ
とにより薄膜パターンを形成することができる。In addition, as a method of forming thin film patterns of metal etc. (Figure F)
As shown in IC, a thin film 17 is formed on the entire surface of the resist pattern with a clickable overhang by vacuum evaporation method, etc., and then both types of resists (15 and 16) are removed using a remover to form a thin film pattern. can do.
以下半導体レーザの電極を形成する実施例について本発
明を説明する。The present invention will be described below with reference to an embodiment for forming electrodes of a semiconductor laser.
本発明を実施した半導体レーザはクラッド層とシテイン
シウム・燐（１ｎＰ）を活性層としてインジウム−ガリ
ウム・砒素赤燐（Ｉｎ Ｇａ Ａｓ Ｐ ）を用いる
ものであり、ＩｎＰ／ＩｎＧａＡｓＰ／ＩｎＰ／ＩｎＧ
ａＡｓＦ からなるヘテセエピタキシャル構造をとる
。か〜る構造をとるウェハ上にチタン／白金／金（Ｔｉ
／Ｐｔ ／Ａｕ ）からなる電極を形成する場合にリ
フトオフ法を使用する。The semiconductor laser embodying the present invention uses indium-gallium-arsenic red phosphorus (InGaAsP) as a cladding layer and cyteinium-phosphorus (1nP) as an active layer, and has an InP/InGaAsP/InP/InG
It has a hetese epitaxial structure consisting of aAsF. Titanium/platinum/gold (Ti
A lift-off method is used when forming an electrode made of Pt /Pt /Au.
こ〜でＡｕ、Ｐｔおよび／ｉ蒸着膜の厚さは工（ａｍ：
ｌ、５ｏｏＣＸ：Ｊｌよびｘｏｏｏｒ、、Ａ）で；＋る
。The thickness of the Au, Pt and /i deposited films is
l, 5ooCX: Jl and xooor, , A);+ru.
か〜る３層構造の電極をリフトオフ法で設けるＫは張出
し部より基板までの高さが少くとも２〔μｍ３以上ある
ことが必要である。In order to provide such a three-layered electrode by the lift-off method, it is necessary that the height from the protruding portion to the substrate be at least 2 [μm3] or more.
本実施例においてはポジ型しジス）ＡＺ−１３５０Ｊを
８０［：℃〕、１０分間のプリベーク処理後忙おいて厚
さが２．５〔μｍ〕となるように形成し、以後前記の方
法によりレジストの張出し部よりなるパターンを形成し
、この上にＴｉ、Ｐｔ およびＡｕを連続蒸着後コダッ
ク社のレジスト剥離液（Ｊ−１００）を用いてレジスｌ
溶解することにより電極パターンを形成することができ
た。In this example, a positive die (Z) AZ-1350J was prebaked at 80 degrees Celsius for 10 minutes and then formed to a thickness of 2.5 μm. A pattern consisting of overhanging parts of the resist is formed, and after successive deposition of Ti, Pt and Au, the resist is removed using Kodak's resist stripping solution (J-100).
By dissolving it, an electrode pattern could be formed.
（ｇ）発明の効果
本発明の実施によりパターン形成層が厚い場合について
もリフトオフ法の適用が可能となり、Ｐｚなと難溶解金
属を用いた高精度のパターン形成が可能となった。(g) Effects of the Invention By carrying out the present invention, it has become possible to apply the lift-off method even when the pattern formation layer is thick, and it has become possible to form a pattern with high precision using a refractory metal such as Pz.
第１図〜〜０は従来のリフトオフ工程の説明図、第２図
はりフトオフ法が適用できぬ條件を示す説明図、第３図
は張出し部形成の従来構造の説明図、第４図（へ）〜（
Ｆ）は本発明に係るリフトオフ工程の説明図である。
図において１は被処理基板、２はレジスト膜、３はマス
ク、７はパターン形成材料、８は段差部、９は薄膜パタ
ーン、１５はポジ型レジスト、１６はネガ型レジスト、
１７は薄膜。Figures 1 to 0 are explanatory diagrams of the conventional lift-off process, Figure 2 is an explanatory diagram showing conditions where the beam lift-off method cannot be applied, Figure 3 is an explanatory diagram of the conventional structure for forming an overhang, and Figure 4 (see )～(
F) is an explanatory diagram of the lift-off process according to the present invention. In the figure, 1 is a substrate to be processed, 2 is a resist film, 3 is a mask, 7 is a pattern forming material, 8 is a stepped portion, 9 is a thin film pattern, 15 is a positive resist, 16 is a negative resist,
17 is a thin film.
Claims (1)
れたレジスト膜上にパターン形成を行うべぎ材料の薄膜
を形成したる後、レジスト膜を剥離して薄膜パターンを
形成するリフトオフ法において、基板上に露光されたポ
ジ型レジスト膜を形成し、更に該ポジ型レジスト膜上に
ネガ型レジスト膜を形成し、該ネガ型レジスト膜をバタ
ーニングして第１の開口を形成し２、該ｇｌの開口が形
成されたネガ型レジスト膜をマスクとして前記ポジ型レ
ジスト膜を現像処理し、前記ポジ型レジスト膜に前記第
１の開口より広い面積を有する第２の開口を形成１−る
ことを特徴とするマスクパターンの形成方法。In the lift-off method, in which a thin film of a material to be patterned is formed on a resist film that has been formed on a substrate to be processed and a fine pattern window has been opened, and then the resist film is peeled off to form a thin film pattern. , forming an exposed positive resist film on the substrate, further forming a negative resist film on the positive resist film, and patterning the negative resist film to form a first opening; Using the negative resist film in which the GL opening is formed as a mask, the positive resist film is developed, and a second opening having a larger area than the first opening is formed in the positive resist film. A method for forming a mask pattern, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12797882A JPS5918643A (en) | 1982-07-22 | 1982-07-22 | Formation of mask pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12797882A JPS5918643A (en) | 1982-07-22 | 1982-07-22 | Formation of mask pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5918643A true JPS5918643A (en) | 1984-01-31 |
Family
ID=14973398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12797882A Pending JPS5918643A (en) | 1982-07-22 | 1982-07-22 | Formation of mask pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5918643A (en) |
-
1982
- 1982-07-22 JP JP12797882A patent/JPS5918643A/en active Pending
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