JPS58204534A - Mask for x-ray lithography - Google Patents
Mask for x-ray lithographyInfo
- Publication number
- JPS58204534A JPS58204534A JP57086626A JP8662682A JPS58204534A JP S58204534 A JPS58204534 A JP S58204534A JP 57086626 A JP57086626 A JP 57086626A JP 8662682 A JP8662682 A JP 8662682A JP S58204534 A JPS58204534 A JP S58204534A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- diamond
- transparent
- ray
- constituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001015 X-ray lithography Methods 0.000 title abstract 3
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 12
- 239000010432 diamond Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 7
- 238000001659 ion-beam spectroscopy Methods 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000006096 absorbing agent Substances 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241000287127 Passeridae Species 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000077 insect repellent Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体装置の製造等に用いられるリング2フ
イ用マスクに関し、特にX線リングラフィマスクの構造
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ring 2-fi mask used in the manufacture of semiconductor devices, and more particularly to the structure of an X-ray phosphorography mask.
X#lリングラフィ用マスクに必要な性質としては1)
Xi透過体の線吸収係数が小さい、1f)X線透過体の
位置安定性がすぐれている、111)耐薬品性。The properties required for a mask for X#l phosphorography are 1)
The linear absorption coefficient of the Xi transparent body is small, 1f) The positional stability of the X-ray transparent body is excellent, 111) Chemical resistance.
耐湿性がすぐれている、IV)丈夫でかつ作成容易であ
る等があげられる。さらにマスク−ウェー71合せ音光
学的手法で行う場合を想定するとX線透過性のみならず
、可視光に対する透過性の大きい材料でおることが望ま
しい。It has excellent moisture resistance, and IV) is durable and easy to produce. Furthermore, assuming that the mask-way 71 is to be carried out using an acousto-optic method, it is desirable to use a material that is not only transparent to X-rays but also highly transparent to visible light.
従来X緋すソグラフィ用マスク材としては、S L、
8+sNa 、BN、 T i 、ポリイミド等の多数
の材料が検討されてきた。これらの材料は前記のマスク
に費求される性質のすべてを同時に満すものではなく、
一長一短である。Conventional X scarlet lithography mask materials include S L,
A number of materials have been considered, such as 8+sNa, BN, Ti, polyimide, etc. These materials do not simultaneously satisfy all of the properties required for the above-mentioned masks;
There are pros and cons.
本発明はこれらの性質のうちとくに、位置安定性、耐薬
品性のすぐれた、可視光にも透明なマスクを提供するこ
とを目的とする。本発明では、これ全実現するため薄膜
ダイヤモンドを形成した。Among these properties, it is an object of the present invention to provide a mask that has excellent positional stability and chemical resistance, and is also transparent to visible light. In the present invention, a thin film of diamond is formed to achieve all of this.
ダイヤモンドは周知の如く、既知材料中で最も熱伝導率
の大きな吻質の一つでアシ、これを使用すめことによシ
透過体上に形成されたAu等のX線吸収体がX線を吸収
した除虫ずる熱を速やかに糸外に伝達することができ、
従ってXM真光にともなうマスクの磁度上昇〉低く抑え
ることが可能にな負、この粕来、熱膨張によるパターン
位置ずれを最小におさえることができる。又、透明薄膜
であるため位置合せにHe−Neレーザ等の可視領域の
光倉用いることができる。As is well known, diamond is one of the materials with the highest thermal conductivity among known materials, and by using diamond, an X-ray absorber such as Au formed on the transparent material can absorb X-rays. The heat absorbed by the insect repellent can be quickly transferred to the outside of the thread,
Therefore, it is possible to suppress the increase in magnetic field of the mask due to XM light, and to minimize the pattern positional deviation due to thermal expansion. Furthermore, since it is a transparent thin film, a visible light source such as a He-Ne laser can be used for alignment.
従来、炭素の蒸着は真空中にあ−いて炭素電極を用いて
アーク族tinして行っていたが、この方法では形成さ
れる炭素薄膜は無定形炭素およびグラファイトの混合物
となり、100Å以上の膜はカッ色から黒色となり光透
過性は悪く、かつ膜強度も十分なものが得られず、従っ
てX線すングフフイのマスクに用いることはできなかっ
た。Conventionally, carbon vapor deposition was carried out in a vacuum using a carbon electrode in an arc group, but with this method, the carbon thin film formed was a mixture of amorphous carbon and graphite, and a film of 100 Å or more was The color changed from dark brown to black, and the light transmittance was poor, and a film with sufficient strength could not be obtained, so it could not be used as a mask for X-ray radiation.
本発明では蒸層法としてマグネトロンスパッタ法や、イ
オンビームスパッタ法を用いることによってダイヤモン
ドと無短形炭素とからなる透明膜を形成し、これkX?
Wl)ソグラフイ用マスクとして用いる。以下実施例に
従って評しく説明する。In the present invention, a transparent film made of diamond and rectangular carbon is formed by using a magnetron sputtering method or an ion beam sputtering method as a vapor deposition method.
Wl) Used as a mask for lithography. The following is a detailed explanation based on examples.
第1図は本発明の第1の実施例で、1はリード、2はア
ノード、3は基板、4はターゲット、5は磁石、6はカ
ソード、7は真空系を示す。FIG. 1 shows a first embodiment of the present invention, in which 1 is a lead, 2 is an anode, 3 is a substrate, 4 is a target, 5 is a magnet, 6 is a cathode, and 7 is a vacuum system.
第1図に示すように、プレーナマグネトロンスパッタ法
に用いた装[dターゲット4近傍に直行′電磁界を形成
し、尚密度プラズマを発生させる方法である。
〜
ターゲットに成形ブラフアイトラ用い、スパッタガスに
はアルゴン又は窒素を用いた。基&3には(111)S
i (100)Si又は′IR向研磨した石英ガラス
を用いた。As shown in FIG. 1, this is a method in which a perpendicular electromagnetic field is formed in the vicinity of the target 4 used in the planar magnetron sputtering method to generate high-density plasma.
~ A molded bluff eye trap was used as the target, and argon or nitrogen was used as the sputtering gas. (111)S for base &3
i (100)Si or IR-polished silica glass was used.
スパッタ蒸着により、基板上に0,2〜3μm厚の炭素
膜を形成した。A carbon film with a thickness of 0.2 to 3 μm was formed on the substrate by sputter deposition.
第2図は本発明の第2の実施例で、21はフィラメント
、22はアノード、23はグリッド電極、24はニュー
トライザ、25はターゲット、26は基板、27はN、
カス入口、28は真空排気系、29は真空系を示す。FIG. 2 shows a second embodiment of the present invention, in which 21 is a filament, 22 is an anode, 23 is a grid electrode, 24 is a neutralizer, 25 is a target, 26 is a substrate, 27 is an N,
28 is a vacuum exhaust system, and 29 is a vacuum system.
第2図に示すイオンビームスパッタ装置は比較的低真空
のイオンソース部と比較的低真空のスパッタ部とからな
る。イオンソース部はアースに対し100OVの電位に
設定した。イオンビームからスパッタ部へのイオン引出
し用にグリッド電極23を設は接地する。こうして加速
されたイオンがターゲット25をたたき基板26に析出
する。The ion beam sputtering apparatus shown in FIG. 2 consists of an ion source section with a relatively low vacuum and a sputter section with a relatively low vacuum. The ion source section was set at a potential of 100 OV with respect to ground. A grid electrode 23 is provided and grounded for extracting ions from the ion beam to the sputtering section. The ions accelerated in this manner strike the target 25 and are deposited on the substrate 26.
ターゲットとしては第1の実施例と同様成形グラファイ
トt−用い、スパッタガスにはN!を用い、基板には(
111)8i、(100)Si及び石英板を用いた。As in the first embodiment, molded graphite T- was used as the target, and N! was used as the sputtering gas. , and the board is (
111)8i, (100)Si and quartz plates were used.
ガス圧t” 10−’forr以下とし、基板上に0.
5〜3μm厚の炭糸膜を形成した。The gas pressure t'' is 10-'forr or less, and 0.
A carbon fiber membrane with a thickness of 5 to 3 μm was formed.
第1および第2の実施例において形成した膜の結晶化学
的性)xを反射電子線回折によって測定した結果および
、基板をエツチング除去後の目視による色、Aを第1表
にまとめた。Table 1 summarizes the results of measuring the crystal chemical properties (x) of the films formed in the first and second examples by reflection electron diffraction, and the visual color A after etching the substrate.
D=ダイヤモンド型
−に一ニー無定形
G:グラファイト型
この表かられかるように、実施例1,2とも形成される
炭素膜はダイヤモンド實の炭素を主成分とする透明度の
よい膜でおる。D=diamond-shaped, amorphous G: graphite-type As can be seen from this table, the carbon films formed in both Examples 1 and 2 are highly transparent films containing diamond-like carbon as a main component.
第1戎において不等号は成分比の大小関係を示し、例え
ばD)AはDがAなら多いことを示す。In the first equation, the inequality sign indicates the magnitude relationship of the component ratio, for example, D)A indicates that if D is A, there is more.
第3図は本発明のig3の実施例で、基板として(11
1)8131 k用イ2 μm厚に炭素膜32を形成し
たものを例としてX線リングラフィマスクとして用いる
場合の作成方法を示した。−この上からT133を蒸着
によpo、oiμm形成し、常法に使いレジストハター
ン34を形成する。これをパターニングマスクとして金
メッキをして約0.5μm厚の雀パターン35を形成し
、パターン形成した面を保護する工夫をしてSi基板3
1を裏面からHF +HNOs+ CH,C0OHの混
液によシ除去しマスクを得た。Figure 3 shows an embodiment of ig3 of the present invention, with (11
1) For 8131k A A method for making a 2 μm thick carbon film 32 is used as an X-ray phosphorography mask as an example. - From above, T133 is formed to a thickness of po and oi .mu.m by vapor deposition, and a resist pattern 34 is formed using a conventional method. Using this as a patterning mask, gold plating was performed to form a sparrow pattern 35 with a thickness of about 0.5 μm, and the Si substrate 3 was devised to protect the patterned surface.
1 was removed from the back side using a mixed solution of HF + HNOs + CH, COOH to obtain a mask.
本発明の効果t−明らかにするため第3の実施例で得た
マスクに波長8.34人のX−を照射しその除の温度上
昇を調べた。マスク面上でのX線強度は1 mw/ら2
とした。金パターンはマスク面の40%を占める球にし
、X吻照射を真空中、1’l’orrlle中、空気中
において2分後のマスク温度上昇を調べたところ、真空
中では0.IC程度の上昇があったが、ITOrrHe
および空気中では測定下限(O,OSo)以Fでめった
。ちなみに同様の条件で既存の3μm厚のポリイミドの
温度上昇を調べたところ真空中で約1.2 CX仝空気
中も0.2C程度上温度上昇があった。In order to clarify the effect of the present invention, the mask obtained in the third embodiment was irradiated with X- of 8.34 wavelength and the temperature rise was investigated. The X-ray intensity on the mask surface is 1 mw/ra2
And so. The gold pattern was made into a sphere occupying 40% of the mask surface, and the mask temperature rise after 2 minutes of X-ray irradiation in vacuum, 1'l'orrlle, and air was investigated, and it was found that in vacuum it was 0. Although there was an increase of about IC, ITOrrHe
In air, the temperature was below the lower measurement limit (O, OSo). By the way, when we investigated the temperature rise of existing polyimide with a thickness of 3 μm under similar conditions, we found that the temperature rise was about 1.2 CX in vacuum and about 0.2 C in air.
これによってダイヤモンド實を中心組成とする炭素マス
クの温度変化が小さく従って寸法安定性が高いことを証
明された。This proves that the carbon mask, whose main composition is diamond, has small temperature changes and high dimensional stability.
第1図は本発明を通用したプレーナマグネトロンスパッ
タ装置の原理図、1@2図は本発明を適用したイオンビ
ームスパッタ装置の原理図、第3図は本発明を通用した
マスク作成プロセスを示す図でおる。
11 図
′lil!12I21
茅 3 図Fig. 1 is a diagram showing the principle of a planar magnetron sputtering device to which the present invention is applied, Figure 1@2 is a diagram showing the principle of an ion beam sputtering device to which the present invention is applied, and Fig. 3 is a diagram showing a mask making process to which the present invention is applied. I'll go. 11 Figure 'lil! 12I21 Kaya 3 Figure
Claims (1)
からなる薄膜をX線透過体として有することe%徴とす
るXiミリングラフィマスク。A Xi milligraphy mask characterized by having a thin film made of diamond or a mixture of diamond and amorphous carbon as an X-ray transmitter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086626A JPS58204534A (en) | 1982-05-24 | 1982-05-24 | Mask for x-ray lithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086626A JPS58204534A (en) | 1982-05-24 | 1982-05-24 | Mask for x-ray lithography |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58204534A true JPS58204534A (en) | 1983-11-29 |
Family
ID=13892230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57086626A Pending JPS58204534A (en) | 1982-05-24 | 1982-05-24 | Mask for x-ray lithography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58204534A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639932A (en) * | 1986-06-30 | 1988-01-16 | Hoya Corp | Mask for x-ray exposure |
JPS6337619A (en) * | 1986-08-01 | 1988-02-18 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
JPS63254727A (en) * | 1987-04-10 | 1988-10-21 | Nissin Electric Co Ltd | X-ray exposure mask and manufacture thereof |
JPH0247824A (en) * | 1988-07-28 | 1990-02-16 | Korea Electron Telecommun | Manufacture of x-ray lithography mask utilizing amorphous carbon support film |
US5111491A (en) * | 1990-08-28 | 1992-05-05 | Sumitomo Electric Industries, Ltd. | X-ray lithography mask and method for producing same |
WO2005034229A1 (en) * | 2003-09-12 | 2005-04-14 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7129180B2 (en) | 2003-09-12 | 2006-10-31 | Micron Technology, Inc. | Masking structure having multiple layers including an amorphous carbon layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128031A (en) * | 1981-01-30 | 1982-08-09 | Nippon Telegr & Teleph Corp <Ntt> | Exposure mask |
-
1982
- 1982-05-24 JP JP57086626A patent/JPS58204534A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128031A (en) * | 1981-01-30 | 1982-08-09 | Nippon Telegr & Teleph Corp <Ntt> | Exposure mask |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639932A (en) * | 1986-06-30 | 1988-01-16 | Hoya Corp | Mask for x-ray exposure |
JPS6337619A (en) * | 1986-08-01 | 1988-02-18 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
JPS63254727A (en) * | 1987-04-10 | 1988-10-21 | Nissin Electric Co Ltd | X-ray exposure mask and manufacture thereof |
JPH0247824A (en) * | 1988-07-28 | 1990-02-16 | Korea Electron Telecommun | Manufacture of x-ray lithography mask utilizing amorphous carbon support film |
US5111491A (en) * | 1990-08-28 | 1992-05-05 | Sumitomo Electric Industries, Ltd. | X-ray lithography mask and method for producing same |
WO2005034229A1 (en) * | 2003-09-12 | 2005-04-14 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7129180B2 (en) | 2003-09-12 | 2006-10-31 | Micron Technology, Inc. | Masking structure having multiple layers including an amorphous carbon layer |
US7132201B2 (en) | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7220683B2 (en) | 2003-09-12 | 2007-05-22 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7298024B2 (en) | 2003-09-12 | 2007-11-20 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
US7341957B2 (en) | 2003-09-12 | 2008-03-11 | Micron Technology, Inc. | Masking structure having multiple layers including amorphous carbon layer |
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