JPS5692536A - Pattern formation method - Google Patents

Pattern formation method

Info

Publication number
JPS5692536A
JPS5692536A JP16917379A JP16917379A JPS5692536A JP S5692536 A JPS5692536 A JP S5692536A JP 16917379 A JP16917379 A JP 16917379A JP 16917379 A JP16917379 A JP 16917379A JP S5692536 A JPS5692536 A JP S5692536A
Authority
JP
Japan
Prior art keywords
ultraviolet rays
developing fluid
areas
far ultraviolet
developed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16917379A
Other languages
Japanese (ja)
Other versions
JPS6029936B2 (en
Inventor
Hiroshi Tokunaga
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54169173A priority Critical patent/JPS6029936B2/en
Publication of JPS5692536A publication Critical patent/JPS5692536A/en
Publication of JPS6029936B2 publication Critical patent/JPS6029936B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Abstract

PURPOSE:To obtain a negative image of high precision and superior quality, by irradiating a quinonediazide type positive resist film with far ultraviolet rays to effect patternwise exposure, then heat treating this, and further uniformly irradiating it with ultraviolet rays to solubilize the areas not developed with the far ultraviolet rays in a developing fluid. CONSTITUTION:A quinonediazide type positive resist film coated on a substrate is irradiated with far ultraviolet rays of 180-300nm wavelengths in >=200mJ/cm<2> intensity to effect patternwise exposure, and then, heat treated at 80-100 deg.C for 15-20min to insolubilize the exposed areas in a developing fluid. This resist film is uniformly irradiated with ultraviolet rays of >=350nm wavelengths in 30- 50mJ/cm<2> intensity to solubilize the areas not developed with the far ultraviolet rays in the developing fluid, and developed by dissolving said areas in an alkaline developing fluid or a metal-free developing fluid to give the desired negative pattern image, thus permitting a high quality, shallow-etched negative image of low diffraction and high precision to be obtained.
JP54169173A 1979-12-27 1979-12-27 Pattern formation method Expired JPS6029936B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54169173A JPS6029936B2 (en) 1979-12-27 1979-12-27 Pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54169173A JPS6029936B2 (en) 1979-12-27 1979-12-27 Pattern formation method

Publications (2)

Publication Number Publication Date
JPS5692536A true JPS5692536A (en) 1981-07-27
JPS6029936B2 JPS6029936B2 (en) 1985-07-13

Family

ID=15881595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54169173A Expired JPS6029936B2 (en) 1979-12-27 1979-12-27 Pattern formation method

Country Status (1)

Country Link
JP (1) JPS6029936B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56140345A (en) * 1980-04-02 1981-11-02 Hitachi Ltd Formation of pattern
JPS5955434A (en) * 1982-09-24 1984-03-30 Fujitsu Ltd Method for forming positive resist pattern for far ultraviolet rays
JPS5979249A (en) * 1982-10-29 1984-05-08 Tokyo Ohka Kogyo Co Ltd Pattern formation
JPS59146047A (en) * 1983-02-10 1984-08-21 Oki Electric Ind Co Ltd Patterning method of negative resist
JPS59181535A (en) * 1983-03-31 1984-10-16 Oki Electric Ind Co Ltd Pattern formation of negative resist
EP0124265A2 (en) * 1983-03-31 1984-11-07 Oki Electric Industry Company, Limited Process for forming pattern with negative resist
JPS59202462A (en) * 1983-05-02 1984-11-16 Oki Electric Ind Co Ltd Formation of negative type resist pattern
JPS6045244A (en) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd Formation of resist pattern
JPS6045242A (en) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd Formation of resist pattern
JPS6045243A (en) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd Formation of resist pattern
JPS60130828A (en) * 1983-12-19 1985-07-12 Oki Electric Ind Co Ltd Formation of resist pattern
JPS6180246A (en) * 1984-09-28 1986-04-23 Nec Corp Positive resist material
JPS63269150A (en) * 1987-04-28 1988-11-07 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPH01147453A (en) * 1987-10-21 1989-06-09 Samsung Semiconductor & Teleommun Co Ltd Negative pattern formation utilizing positive photosensitive resin
JPH01158451A (en) * 1987-09-25 1989-06-21 Toray Ind Inc Production of waterless planographic printing plate
JPH01283829A (en) * 1988-05-10 1989-11-15 Mitsubishi Electric Corp Pattern forming method
JPH02207253A (en) * 1989-02-07 1990-08-16 Rohm Co Ltd Photomask for pattern formation and exposing method
CN102166920A (en) * 2011-03-25 2011-08-31 宁波泰佳安全设备有限公司 Lifting caster structure of box
DE102018207351A1 (en) 2017-05-16 2018-11-22 Toyota Boshoku Kabushiki Kaisha SEAT DRIVE DEVICE

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0110557Y2 (en) * 1985-07-11 1989-03-27

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (en) * 1973-04-07 1974-12-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (en) * 1973-04-07 1974-12-06

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56140345A (en) * 1980-04-02 1981-11-02 Hitachi Ltd Formation of pattern
JPH0128374B2 (en) * 1980-04-02 1989-06-02 Hitachi Ltd
JPS5955434A (en) * 1982-09-24 1984-03-30 Fujitsu Ltd Method for forming positive resist pattern for far ultraviolet rays
JPH0349100B2 (en) * 1982-09-24 1991-07-26 Fujitsu Ltd
JPS5979249A (en) * 1982-10-29 1984-05-08 Tokyo Ohka Kogyo Co Ltd Pattern formation
JPH0343614B2 (en) * 1982-10-29 1991-07-03 Tokyo Ohka Kogyo Co Ltd
JPS59146047A (en) * 1983-02-10 1984-08-21 Oki Electric Ind Co Ltd Patterning method of negative resist
JPH0334052B2 (en) * 1983-02-10 1991-05-21 Oki Electric Ind Co Ltd
EP0124265A2 (en) * 1983-03-31 1984-11-07 Oki Electric Industry Company, Limited Process for forming pattern with negative resist
JPS59181535A (en) * 1983-03-31 1984-10-16 Oki Electric Ind Co Ltd Pattern formation of negative resist
JPH0334053B2 (en) * 1983-03-31 1991-05-21 Oki Electric Ind Co Ltd
JPS59202462A (en) * 1983-05-02 1984-11-16 Oki Electric Ind Co Ltd Formation of negative type resist pattern
JPH0334055B2 (en) * 1983-05-02 1991-05-21 Oki Electric Ind Co Ltd
JPS6045244A (en) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd Formation of resist pattern
JPS6045243A (en) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd Formation of resist pattern
JPH0470626B2 (en) * 1983-08-23 1992-11-11 Oki Electric Ind Co Ltd
JPS6045242A (en) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd Formation of resist pattern
JPH0458170B2 (en) * 1983-12-19 1992-09-16 Oki Electric Ind Co Ltd
JPS60130828A (en) * 1983-12-19 1985-07-12 Oki Electric Ind Co Ltd Formation of resist pattern
JPS6180246A (en) * 1984-09-28 1986-04-23 Nec Corp Positive resist material
JPS63269150A (en) * 1987-04-28 1988-11-07 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPH0544019B2 (en) * 1987-04-28 1993-07-05 Nippon Telegraph & Telephone
JPH01158451A (en) * 1987-09-25 1989-06-21 Toray Ind Inc Production of waterless planographic printing plate
JPH01147453A (en) * 1987-10-21 1989-06-09 Samsung Semiconductor & Teleommun Co Ltd Negative pattern formation utilizing positive photosensitive resin
JPH01283829A (en) * 1988-05-10 1989-11-15 Mitsubishi Electric Corp Pattern forming method
JPH02207253A (en) * 1989-02-07 1990-08-16 Rohm Co Ltd Photomask for pattern formation and exposing method
CN102166920A (en) * 2011-03-25 2011-08-31 宁波泰佳安全设备有限公司 Lifting caster structure of box
DE102018207351A1 (en) 2017-05-16 2018-11-22 Toyota Boshoku Kabushiki Kaisha SEAT DRIVE DEVICE

Also Published As

Publication number Publication date
JPS6029936B2 (en) 1985-07-13

Similar Documents

Publication Publication Date Title
JPS5692536A (en) Pattern formation method
US4356255A (en) Photosensitive members and a process for forming patterns using the same
US4705729A (en) Method for photochemically enhancing resolution in photolithography processes
JPS5922050A (en) Photomask
US3836368A (en) Photopolymerizable element comprising a conjugated diacetylene layer on the photopolymer layer
JPS5654440A (en) Photosensitive lithographic material and plate making method
JPS5443681A (en) Electron beam light-exposing method
JPS56100417A (en) Forming method for resist pattern
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS55134847A (en) Manufacture of resist image
US3284197A (en) Method for making lithographic plates
JPS57109331A (en) Formation of resist pattern
JPS55163841A (en) Method for electron beam exposure
JPS5621328A (en) Method of making pattern
JPS56144539A (en) Formation of fine pattern
SU920624A1 (en) Method of obtaining protective pictures by means of negative photoresistors
JPS5651734A (en) Direct positive image forming method
JPS5632143A (en) Manufacture of photomask
JPS5655943A (en) Pattern forming method
JPH0458245A (en) Mask for forming fine pattern and production thereof
JPS5680043A (en) Far ultraviolet exposing method
JPS5664337A (en) Radiation resist material and radiation resist pattern forming method
JPS57102018A (en) Pattern correction
JPS55128831A (en) Method of making photoresist film pattern
JPS61250634A (en) Pattern forming material