JPS55128831A - Method of making photoresist film pattern - Google Patents

Method of making photoresist film pattern

Info

Publication number
JPS55128831A
JPS55128831A JP3600479A JP3600479A JPS55128831A JP S55128831 A JPS55128831 A JP S55128831A JP 3600479 A JP3600479 A JP 3600479A JP 3600479 A JP3600479 A JP 3600479A JP S55128831 A JPS55128831 A JP S55128831A
Authority
JP
Japan
Prior art keywords
film
recess
irradiated
pattern
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3600479A
Other languages
Japanese (ja)
Inventor
Hiroaki Mukohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3600479A priority Critical patent/JPS55128831A/en
Publication of JPS55128831A publication Critical patent/JPS55128831A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To improve accuracy when making a pattern of photoresist film on the surface of a substrate which has a recess, by coating the resist film on the entire surface, performing a restricted quantity of selective exposure to light to cause insufficient cross-linking reaction, removing the unexposed part of the film and effecting heat treatment.
CONSTITUTION: To make a pattern of photoresist film on an SiO2 film 1 having a step, a resist film 2 is rotatively coated and baked first. A photomask 3 is placed on the resist film 2 so that a dark part 4 of chromium oxide on the bottom of the mask corresponds to a recess. Ultraviolet rays 5 are irradiated upon the side of the mask opposite the dark part 4 so that the irradiated quantity of the rays is about a half of a conventional irradiated quantity. The mask 3 is removed. A developer is sprayed on the entire surface. Only the film part 2b corresponding to the dark part 4 in he recess is completely removed so that an opening 8 is provided and the other film part 2a remains at the peripheral section of the recess and a projecting portion. Since the film part 2a is swollen due to the insufficient irradiated quantity and pinholes 7 or the like are produced, heat treatment is effected to cause thermal polymerization. The pinholes 7 are thus filled so that a desired pattern 2d is provided.
COPYRIGHT: (C)1980,JPO&Japio
JP3600479A 1979-03-27 1979-03-27 Method of making photoresist film pattern Pending JPS55128831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3600479A JPS55128831A (en) 1979-03-27 1979-03-27 Method of making photoresist film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3600479A JPS55128831A (en) 1979-03-27 1979-03-27 Method of making photoresist film pattern

Publications (1)

Publication Number Publication Date
JPS55128831A true JPS55128831A (en) 1980-10-06

Family

ID=12457622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3600479A Pending JPS55128831A (en) 1979-03-27 1979-03-27 Method of making photoresist film pattern

Country Status (1)

Country Link
JP (1) JPS55128831A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183028A (en) * 1981-05-07 1982-11-11 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183028A (en) * 1981-05-07 1982-11-11 Oki Electric Ind Co Ltd Manufacture of semiconductor device

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