JPS57102018A - Pattern correction - Google Patents

Pattern correction

Info

Publication number
JPS57102018A
JPS57102018A JP17918480A JP17918480A JPS57102018A JP S57102018 A JPS57102018 A JP S57102018A JP 17918480 A JP17918480 A JP 17918480A JP 17918480 A JP17918480 A JP 17918480A JP S57102018 A JPS57102018 A JP S57102018A
Authority
JP
Japan
Prior art keywords
developing
pattern
plasma
corrected
dry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17918480A
Other languages
Japanese (ja)
Inventor
Kazuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17918480A priority Critical patent/JPS57102018A/en
Publication of JPS57102018A publication Critical patent/JPS57102018A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Abstract

PURPOSE:To make correction easy and simpify process by a method wherein after exposure of a required pattern, developing is performed to a halfway state, an electron beam is applied to a pin-hole part and dry-developing is performed, so that the pattern is corrected. CONSTITUTION:A metal thin film 6 formed on a transparent substrate 1 is coated with photosensitive resin 7 and a required pattern is exposed by ultraviolet rays. Then the substrate is immersed in a developing liquid for a period about a half of a usual developing period and is washed by pure water and then dried. At that time, as the developing is performed to a halfway state, the resist pattern is beginning to be formed. Failure inspection is carried out at this stage and a failure part 3 is exposed by an electron beam irradiation. After completion of the exposure, dry-developing is performed by a plasma equipment. The part irradiated by the light is removed with a relatively higher speed in plasma but the part irradiated by the electron beam has a high plasma resistivity. Thus the failure part 3 is corrected after the dry-developing in plasma, so that the corrected part 5 of the pattern is left as a correct pattern.
JP17918480A 1980-12-17 1980-12-17 Pattern correction Pending JPS57102018A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17918480A JPS57102018A (en) 1980-12-17 1980-12-17 Pattern correction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17918480A JPS57102018A (en) 1980-12-17 1980-12-17 Pattern correction

Publications (1)

Publication Number Publication Date
JPS57102018A true JPS57102018A (en) 1982-06-24

Family

ID=16061400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17918480A Pending JPS57102018A (en) 1980-12-17 1980-12-17 Pattern correction

Country Status (1)

Country Link
JP (1) JPS57102018A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104772A (en) * 1987-01-27 1992-04-14 Fujitsu Limited Method of forming fine resist pattern in electron beam or x-ray lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5104772A (en) * 1987-01-27 1992-04-14 Fujitsu Limited Method of forming fine resist pattern in electron beam or x-ray lithography

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