JPS56153738A - Method for contact exposure - Google Patents

Method for contact exposure

Info

Publication number
JPS56153738A
JPS56153738A JP5763580A JP5763580A JPS56153738A JP S56153738 A JPS56153738 A JP S56153738A JP 5763580 A JP5763580 A JP 5763580A JP 5763580 A JP5763580 A JP 5763580A JP S56153738 A JPS56153738 A JP S56153738A
Authority
JP
Japan
Prior art keywords
exposure
region
conspicuous
shortage
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5763580A
Other languages
Japanese (ja)
Inventor
Yuji Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5763580A priority Critical patent/JPS56153738A/en
Publication of JPS56153738A publication Critical patent/JPS56153738A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the formation of the region having a conspicuous shortage of exposure in a negative type resist layer as well as to reproduce a resist pattern accurately by a method wherein the position of the wave node on a standing wave is varied while being exposed. CONSTITUTION:A semiconductor substrate 8 to be processed, on the upper surface of which a negative type resist layer 7 is coated, and a photomask are superposed and fixed on the stage 6, which is provided on the flat surface at a right angle to an optical axis and movable to the XY direction, located at the lower part of the ultraviolet ray source 5 having the source of light consisting of a mercury lamp. Then, an exposure processing is performed for the prescribed period of time by shifting the stage 6 to the leftward or rightward direction and the forward or backward direction (not shown) as shown by an arrow 11 within the ultraviolet ray irradiated region 10 having the prescribed illumination which is formed in a circular shape having the diameter of about 2-2.5 times of the diameter of the substrate 8. Through these procedures, the reproduction of the pattern can be performed after exposure without formation of the region having a conspicuous shortage of exposure in the photoresist layer caused by the standing wave.
JP5763580A 1980-04-30 1980-04-30 Method for contact exposure Pending JPS56153738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5763580A JPS56153738A (en) 1980-04-30 1980-04-30 Method for contact exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5763580A JPS56153738A (en) 1980-04-30 1980-04-30 Method for contact exposure

Publications (1)

Publication Number Publication Date
JPS56153738A true JPS56153738A (en) 1981-11-27

Family

ID=13061346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5763580A Pending JPS56153738A (en) 1980-04-30 1980-04-30 Method for contact exposure

Country Status (1)

Country Link
JP (1) JPS56153738A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999046643A1 (en) * 1998-03-09 1999-09-16 Karl Süss Kg Präzisionsgeräte Für Wissenschaft Und Industrie Gmbh & Co. Method for exposure to a substantially parallel light

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120777A (en) * 1974-03-08 1975-09-22
JPS529509A (en) * 1975-07-07 1977-01-25 Baldwin Gegenheimer Corp Curl removing apparatus for sheet material
JPS533170A (en) * 1976-06-30 1978-01-12 Ibm Contact type printer
JPS5388728A (en) * 1977-01-14 1978-08-04 Toshiba Corp Method of forming pattern
JPS54115076A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Method of printing pattern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120777A (en) * 1974-03-08 1975-09-22
JPS529509A (en) * 1975-07-07 1977-01-25 Baldwin Gegenheimer Corp Curl removing apparatus for sheet material
JPS533170A (en) * 1976-06-30 1978-01-12 Ibm Contact type printer
JPS5388728A (en) * 1977-01-14 1978-08-04 Toshiba Corp Method of forming pattern
JPS54115076A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Method of printing pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999046643A1 (en) * 1998-03-09 1999-09-16 Karl Süss Kg Präzisionsgeräte Für Wissenschaft Und Industrie Gmbh & Co. Method for exposure to a substantially parallel light

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