JPS5588052A - Developing method for negative type resist - Google Patents

Developing method for negative type resist

Info

Publication number
JPS5588052A
JPS5588052A JP16151978A JP16151978A JPS5588052A JP S5588052 A JPS5588052 A JP S5588052A JP 16151978 A JP16151978 A JP 16151978A JP 16151978 A JP16151978 A JP 16151978A JP S5588052 A JPS5588052 A JP S5588052A
Authority
JP
Japan
Prior art keywords
resist
pattern
ray
negative type
exposed area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16151978A
Other languages
Japanese (ja)
Inventor
Yoshihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16151978A priority Critical patent/JPS5588052A/en
Publication of JPS5588052A publication Critical patent/JPS5588052A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To form the same pattern as that of a masking material on a resist material, by performing plasma etching treatment in an atmosphere consisting mainly of oxygen following the development processing in a process for forming a pattern on a negative type resist material by X-ray, ultraviolet ray, or the like. CONSTITUTION:A pattern is formed on resist material 2 by irradiating this on substrate 1 through masking material 4 formed patternwise on mask substrate 3 of glass or quartz by X-ray, electron beam, ultraviolet ray, or the like. After processing material 2 in a developing solution by wet development, it undergoes etching treatment in an atmosphere consisting mainly of oxygen, resulting in removing exposed area 8 of resist 2 of small resist thickness due to Fresnel's diffraction caused by passing of the ray through the pattern and leaving only usual exposed area 7 of large resist thickness, thus permitting the mask pattern to be transferred to resist 2 in high fidelity.
JP16151978A 1978-12-26 1978-12-26 Developing method for negative type resist Pending JPS5588052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16151978A JPS5588052A (en) 1978-12-26 1978-12-26 Developing method for negative type resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16151978A JPS5588052A (en) 1978-12-26 1978-12-26 Developing method for negative type resist

Publications (1)

Publication Number Publication Date
JPS5588052A true JPS5588052A (en) 1980-07-03

Family

ID=15736608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16151978A Pending JPS5588052A (en) 1978-12-26 1978-12-26 Developing method for negative type resist

Country Status (1)

Country Link
JP (1) JPS5588052A (en)

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