JPS57116342A - Manufacture of photomask - Google Patents

Manufacture of photomask

Info

Publication number
JPS57116342A
JPS57116342A JP274581A JP274581A JPS57116342A JP S57116342 A JPS57116342 A JP S57116342A JP 274581 A JP274581 A JP 274581A JP 274581 A JP274581 A JP 274581A JP S57116342 A JPS57116342 A JP S57116342A
Authority
JP
Japan
Prior art keywords
etching
substance layer
laser light
substrate
bored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP274581A
Other languages
Japanese (ja)
Inventor
Nobuji Tsuchiya
Kinya Usuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP274581A priority Critical patent/JPS57116342A/en
Publication of JPS57116342A publication Critical patent/JPS57116342A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To detect the ending point of etching securely by arranging a resist film, which has a bored monitor pattern, on a mask substrate and by detecting the quantity of transmitted irradiation light from a light emitting device. CONSTITUTION:A mask substrate 7 which mounts a resist film 6 having monitor patterns 9 bored at prescribed positions on an opaque substance layer 5 is fixed to a holder in the reaction tank 1 of a reactive sputter etching device and after an upper lid 4 is fixed, evacuation is performed to produce a high vacuum; and reactive gas is introduced for reactive sputter etching, thereby etching the exposed substance layer 5 on the substrate 7. Then, a laser light emitting device 2 is turned on to irradiate the corresponding substance layer 5 of the pattern 9 of the substrate 7 through an optical fiber 3, and as the substance layer 5 is removed, passed laser light is made incident to a photodetector 8; when the laser light having a prescribed value or below is made incident, an AND circuit 10 outputs a signal and the etching is stopped after a certain time.
JP274581A 1981-01-13 1981-01-13 Manufacture of photomask Pending JPS57116342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP274581A JPS57116342A (en) 1981-01-13 1981-01-13 Manufacture of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP274581A JPS57116342A (en) 1981-01-13 1981-01-13 Manufacture of photomask

Publications (1)

Publication Number Publication Date
JPS57116342A true JPS57116342A (en) 1982-07-20

Family

ID=11537881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP274581A Pending JPS57116342A (en) 1981-01-13 1981-01-13 Manufacture of photomask

Country Status (1)

Country Link
JP (1) JPS57116342A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602955A (en) * 1983-06-20 1985-01-09 Fujitsu Ltd Formation of photomask
JPS60118839A (en) * 1983-11-30 1985-06-26 Hoya Corp Manufacture of photomask
JPH0544065A (en) * 1991-08-09 1993-02-23 Ashida:Kk Detection of electrode's etching state and its equipment
US5690784A (en) * 1994-06-20 1997-11-25 International Business Machines Corporation Ion milling end point detection method and apparatus
CN103811291A (en) * 2013-12-20 2014-05-21 京东方科技集团股份有限公司 Array substrate manufacturing method as well as damage-prevention monitoring method and device for film etching

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS602955A (en) * 1983-06-20 1985-01-09 Fujitsu Ltd Formation of photomask
JPS60118839A (en) * 1983-11-30 1985-06-26 Hoya Corp Manufacture of photomask
JPH0544065A (en) * 1991-08-09 1993-02-23 Ashida:Kk Detection of electrode's etching state and its equipment
US5690784A (en) * 1994-06-20 1997-11-25 International Business Machines Corporation Ion milling end point detection method and apparatus
CN103811291A (en) * 2013-12-20 2014-05-21 京东方科技集团股份有限公司 Array substrate manufacturing method as well as damage-prevention monitoring method and device for film etching
US9646847B2 (en) 2013-12-20 2017-05-09 Boe Technology Group Co., Ltd. Method for manufacturing array substrate, film-etching monitoring method and device

Similar Documents

Publication Publication Date Title
JPS5593225A (en) Forming method of minute pattern
JPS57116342A (en) Manufacture of photomask
JPS5767161A (en) Forming device for thin film by laser
JPS5630129A (en) Manufacture of photomask
JPS51114887A (en) Semiconductor device
JPS5743420A (en) Mask alignment method
JPS5742043A (en) Photosensitive material
JPS56146138A (en) Method and apparatus for exposing photomask
JPS53122369A (en) Automatic alignment unit for wafer
JPS56144536A (en) Pattern formation and p-n junction formation
JPS57112019A (en) Detection of pattern position
JPS5655947A (en) Photomask for far ultraviolet rays
JPS57109952A (en) Production of photomask plate
NO953933L (en) Process control apparatus and apparatus
JPS5754322A (en) Inspecting method for photomask
JPS53110379A (en) Optical filter and its manufacture
JPS57112025A (en) Formation of pattern
JPS6481928A (en) Exposing device
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS56153738A (en) Method for contact exposure
JPS5710232A (en) Forming method for resist pattern
JPS5454579A (en) Exposure method
JPS5712351A (en) Detector for surface fault
JPS5699301A (en) Exposure device
JPS5390766A (en) Exposure method