JPS51114887A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51114887A JPS51114887A JP3999275A JP3999275A JPS51114887A JP S51114887 A JPS51114887 A JP S51114887A JP 3999275 A JP3999275 A JP 3999275A JP 3999275 A JP3999275 A JP 3999275A JP S51114887 A JPS51114887 A JP S51114887A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- layer
- photoguide
- overlaying
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:Obtain an optical semiconductor device easily by overlaying a a crystalline layer which will become a light emitting region(or a photoguide) and a light containment layer on a substrate which has steps.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3999275A JPS51114887A (en) | 1975-04-01 | 1975-04-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3999275A JPS51114887A (en) | 1975-04-01 | 1975-04-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51114887A true JPS51114887A (en) | 1976-10-08 |
Family
ID=12568419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3999275A Pending JPS51114887A (en) | 1975-04-01 | 1975-04-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51114887A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS523392A (en) * | 1975-06-23 | 1977-01-11 | Xerox Corp | Hetero juntion diode laser and method of producing same |
JPS5474689A (en) * | 1977-11-28 | 1979-06-14 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device and its manufacture |
JPS54107284A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor junction laser and its production |
JPS55133565U (en) * | 1980-03-18 | 1980-09-22 | ||
JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
JPS5845586U (en) * | 1981-09-24 | 1983-03-26 | 日本電気株式会社 | display device |
JPS5864085A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Semiconductor laser and manufacture thereof |
JPS58115878A (en) * | 1981-12-28 | 1983-07-09 | Sony Corp | Semiconductor laser element |
JPS5979590A (en) * | 1982-10-27 | 1984-05-08 | ア−ルシ−エ− コ−ポレ−ション | Semiconductor laser |
-
1975
- 1975-04-01 JP JP3999275A patent/JPS51114887A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS523392A (en) * | 1975-06-23 | 1977-01-11 | Xerox Corp | Hetero juntion diode laser and method of producing same |
JPS5653237B2 (en) * | 1975-06-23 | 1981-12-17 | ||
JPS5474689A (en) * | 1977-11-28 | 1979-06-14 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device and its manufacture |
JPS54107284A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor junction laser and its production |
JPS55133565U (en) * | 1980-03-18 | 1980-09-22 | ||
JPS5728387Y2 (en) * | 1980-03-18 | 1982-06-21 | ||
JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
JPS6318877B2 (en) * | 1980-07-16 | 1988-04-20 | Sony Corp | |
JPS5845586U (en) * | 1981-09-24 | 1983-03-26 | 日本電気株式会社 | display device |
JPS5864085A (en) * | 1981-10-13 | 1983-04-16 | Nec Corp | Semiconductor laser and manufacture thereof |
JPS58115878A (en) * | 1981-12-28 | 1983-07-09 | Sony Corp | Semiconductor laser element |
JPS5979590A (en) * | 1982-10-27 | 1984-05-08 | ア−ルシ−エ− コ−ポレ−ション | Semiconductor laser |
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