JPS57112019A - Detection of pattern position - Google Patents

Detection of pattern position

Info

Publication number
JPS57112019A
JPS57112019A JP55187259A JP18725980A JPS57112019A JP S57112019 A JPS57112019 A JP S57112019A JP 55187259 A JP55187259 A JP 55187259A JP 18725980 A JP18725980 A JP 18725980A JP S57112019 A JPS57112019 A JP S57112019A
Authority
JP
Japan
Prior art keywords
laser beam
reflected
mirror
detected
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187259A
Other languages
Japanese (ja)
Other versions
JPS6352766B2 (en
Inventor
Toru Takeuchi
Nobuo Kawase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187259A priority Critical patent/JPS57112019A/en
Publication of JPS57112019A publication Critical patent/JPS57112019A/en
Publication of JPS6352766B2 publication Critical patent/JPS6352766B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To prevent the generation of non-detectable condition by a method wherein the reflected light from the roughened part on the surface of the material to be detected is detected by scanning a laser beam, and a mixed laser beam having different wavelengths is used when the pattern is detected. CONSTITUTION:A laser beam source 1 and a laser beam source 10 are provided, the laser beam generated by these beam sources are mixed by a prism 11 and irradiated as a compound laser beam L11, transmitted through a half mirror 3 and an objective lens 4 while scanning is performed by a rotary multifaced mirror 2, and irradiated on the surface of a semiconductor substrate 8'. Now there exists no roughened part on the substrate 8', and therefore, if a beam of light is incidented vertically, the beam is regularly reflected to the mirror 3 and then to a stopper 5, and the reflected beam is blocked, but if there is a stepping at the edge of the pattern side, the beam is irregularly reflected, reflected by the mirror 3, transmitted through the stopper 5, and incidented to a detector 7 as a regulated beam L12 through the intermediary of a lens 6 to be used for detection. Through these procedures, even when the height of the edge of the pattern side and the wavelength of either of the laser beam are coincided, the detection can be performed by the other laser beam.
JP55187259A 1980-12-29 1980-12-29 Detection of pattern position Granted JPS57112019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187259A JPS57112019A (en) 1980-12-29 1980-12-29 Detection of pattern position

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187259A JPS57112019A (en) 1980-12-29 1980-12-29 Detection of pattern position

Publications (2)

Publication Number Publication Date
JPS57112019A true JPS57112019A (en) 1982-07-12
JPS6352766B2 JPS6352766B2 (en) 1988-10-20

Family

ID=16202839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187259A Granted JPS57112019A (en) 1980-12-29 1980-12-29 Detection of pattern position

Country Status (1)

Country Link
JP (1) JPS57112019A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608804U (en) * 1983-06-30 1985-01-22 富士通株式会社 surface inspection equipment
WO1985001834A1 (en) * 1983-10-07 1985-04-25 Hitachi, Ltd. Optical exposure apparatus
JPS62208630A (en) * 1986-03-10 1987-09-12 Canon Inc Exposure device
JPH04283917A (en) * 1991-03-12 1992-10-08 Hitachi Ltd Aligner for exposure system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111280A (en) * 1977-03-10 1978-09-28 Canon Inc Mask or wafer for production of semiconductor elements and device for aligning these
JPS5570025A (en) * 1978-10-19 1980-05-27 Censor Patent Versuch Device for projecting and printing mark of mask on semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53111280A (en) * 1977-03-10 1978-09-28 Canon Inc Mask or wafer for production of semiconductor elements and device for aligning these
JPS5570025A (en) * 1978-10-19 1980-05-27 Censor Patent Versuch Device for projecting and printing mark of mask on semiconductor substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608804U (en) * 1983-06-30 1985-01-22 富士通株式会社 surface inspection equipment
WO1985001834A1 (en) * 1983-10-07 1985-04-25 Hitachi, Ltd. Optical exposure apparatus
JPS6080223A (en) * 1983-10-07 1985-05-08 Hitachi Ltd Light exposing device
JPS62208630A (en) * 1986-03-10 1987-09-12 Canon Inc Exposure device
JPH0546970B2 (en) * 1986-03-10 1993-07-15 Canon Kk
JPH04283917A (en) * 1991-03-12 1992-10-08 Hitachi Ltd Aligner for exposure system

Also Published As

Publication number Publication date
JPS6352766B2 (en) 1988-10-20

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