JPS5767161A - Forming device for thin film by laser - Google Patents

Forming device for thin film by laser

Info

Publication number
JPS5767161A
JPS5767161A JP55141054A JP14105480A JPS5767161A JP S5767161 A JPS5767161 A JP S5767161A JP 55141054 A JP55141054 A JP 55141054A JP 14105480 A JP14105480 A JP 14105480A JP S5767161 A JPS5767161 A JP S5767161A
Authority
JP
Japan
Prior art keywords
sample
laser
laser beam
metallic compound
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55141054A
Other languages
Japanese (ja)
Other versions
JPS6021224B2 (en
Inventor
Kunihiko Washio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55141054A priority Critical patent/JPS6021224B2/en
Publication of JPS5767161A publication Critical patent/JPS5767161A/en
Publication of JPS6021224B2 publication Critical patent/JPS6021224B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Abstract

PURPOSE:To form a thin film quickly with high accuracy on in microareas without requiring any mask by photodissociating a gas of a metallic compound with one of two beams of laser beam differing in wavelengths, and heating the surface of a sample selectively with the other. CONSTITUTION:Beams of laser from laser devices 11, 12 differing in oscillation wavelength are conducted to a sample 15 by an optical system 13. A sample 15 is placed on a driving stage 16, which is driven freely in XY directions, and is contained in a containing vessel 17. A carrier gas such as He and a gaseous metallic compound are filled in the vessel 17 from a cylinders 18, 19. The gaseous metallic compound is, for example, Al(CH2)3, Cd(CH2)3, etc. and is photodissociated by the irradiation of UV or far UV. The device 11 emits the laser beam causing such action, and the surface of the sample is heated to high temps. by the irradiation of the laser beam emitted from the device 12. As a result, the photodissociated metal deposits firmly onto the heated sample surface.
JP55141054A 1980-10-08 1980-10-08 Laser thin film forming equipment Expired JPS6021224B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141054A JPS6021224B2 (en) 1980-10-08 1980-10-08 Laser thin film forming equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141054A JPS6021224B2 (en) 1980-10-08 1980-10-08 Laser thin film forming equipment

Publications (2)

Publication Number Publication Date
JPS5767161A true JPS5767161A (en) 1982-04-23
JPS6021224B2 JPS6021224B2 (en) 1985-05-25

Family

ID=15283174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141054A Expired JPS6021224B2 (en) 1980-10-08 1980-10-08 Laser thin film forming equipment

Country Status (1)

Country Link
JP (1) JPS6021224B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095275A2 (en) * 1982-05-13 1983-11-30 Energy Conversion Devices, Inc. Photo-assisted CVD
JPS599164A (en) * 1982-06-30 1984-01-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Light precipitation of refractory metal layer on substrate
JPS5940523A (en) * 1982-08-31 1984-03-06 Toshiba Corp Manufacture of semiconductor thin film
JPS59164653A (en) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd Production of optical fiber covered by metal
FR2548218A1 (en) * 1983-06-29 1985-01-04 Pauleau Yves Process for deposition of thin layers by gas phase chemical reaction employing two different radiations
JPS6066896A (en) * 1983-09-16 1985-04-17 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of bonding metal copper on substrate
JPS6091628A (en) * 1983-10-25 1985-05-23 Nec Corp Local thin film forming device
JPS60211077A (en) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd Formation of electrically conductive alloy film
JPS60211076A (en) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd Formation of electrically conductive multilayer film pattern
JPS60211078A (en) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd Formation of electrically conductive film
EP0169485A2 (en) * 1984-07-17 1986-01-29 Nec Corporation Method and apparatus for inducing photochemical reaction
JPS6127623A (en) * 1984-07-17 1986-02-07 Nec Corp Light source for photochemical reactive induction
JPS61213375A (en) * 1985-03-19 1986-09-22 Mitsubishi Electric Corp Photochemical film forming device
JPS61237446A (en) * 1985-04-15 1986-10-22 Hitachi Ltd Method and apparatus for connecting lsi wiring

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0387050U (en) * 1989-12-14 1991-09-04

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095275A2 (en) * 1982-05-13 1983-11-30 Energy Conversion Devices, Inc. Photo-assisted CVD
JPS599164A (en) * 1982-06-30 1984-01-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Light precipitation of refractory metal layer on substrate
JPS5940523A (en) * 1982-08-31 1984-03-06 Toshiba Corp Manufacture of semiconductor thin film
JPS59164653A (en) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd Production of optical fiber covered by metal
FR2548218A1 (en) * 1983-06-29 1985-01-04 Pauleau Yves Process for deposition of thin layers by gas phase chemical reaction employing two different radiations
JPS6066896A (en) * 1983-09-16 1985-04-17 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of bonding metal copper on substrate
JPS6091628A (en) * 1983-10-25 1985-05-23 Nec Corp Local thin film forming device
JPS60211076A (en) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd Formation of electrically conductive multilayer film pattern
JPS60211077A (en) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd Formation of electrically conductive alloy film
JPS60211078A (en) * 1984-04-05 1985-10-23 Fuji Electric Corp Res & Dev Ltd Formation of electrically conductive film
JPH036992B2 (en) * 1984-04-05 1991-01-31 Fuji Denki Sogo Kenkyusho Kk
EP0169485A2 (en) * 1984-07-17 1986-01-29 Nec Corporation Method and apparatus for inducing photochemical reaction
JPS6127623A (en) * 1984-07-17 1986-02-07 Nec Corp Light source for photochemical reactive induction
US4976930A (en) * 1984-07-17 1990-12-11 Nec Corporation Method and apparatus for inducing photochemical reaction
JPS61213375A (en) * 1985-03-19 1986-09-22 Mitsubishi Electric Corp Photochemical film forming device
JPH0429738B2 (en) * 1985-03-19 1992-05-19
JPS61237446A (en) * 1985-04-15 1986-10-22 Hitachi Ltd Method and apparatus for connecting lsi wiring

Also Published As

Publication number Publication date
JPS6021224B2 (en) 1985-05-25

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