JPS57139923A - Forming method for pattern by electron beam - Google Patents

Forming method for pattern by electron beam

Info

Publication number
JPS57139923A
JPS57139923A JP56023683A JP2368381A JPS57139923A JP S57139923 A JPS57139923 A JP S57139923A JP 56023683 A JP56023683 A JP 56023683A JP 2368381 A JP2368381 A JP 2368381A JP S57139923 A JPS57139923 A JP S57139923A
Authority
JP
Japan
Prior art keywords
pattern
electron beam
silver halide
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56023683A
Other languages
Japanese (ja)
Inventor
Toshiaki Tsurushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56023683A priority Critical patent/JPS57139923A/en
Publication of JPS57139923A publication Critical patent/JPS57139923A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Abstract

PURPOSE:To obtain a new method of forming a high sensitivity pattern without detrimental liquid waste by combining a patterning of silver halide film by the exposure of an electron beam and a patterning of metal by electroless plating. CONSTITUTION:This method has the steps of forming a silver halide film on a substrate, exposing it with an electron beam, X-ray or ion beam to form a pattern of silver particles, and forming a metallic film by electroless plating. High resolution silver halide emulsion is coated on a glass substrate 1 to form a silver halide layer 2, a pattern is drawn by an electron beam drawing device, is then developed and fixed to form a silver particle pattern. Then, the substrate is dipped in an electroless nickel plating bath to form a nickel film 4, and is then cleaned and baked, thereby obtaining a desired mask.
JP56023683A 1981-02-21 1981-02-21 Forming method for pattern by electron beam Pending JPS57139923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56023683A JPS57139923A (en) 1981-02-21 1981-02-21 Forming method for pattern by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56023683A JPS57139923A (en) 1981-02-21 1981-02-21 Forming method for pattern by electron beam

Publications (1)

Publication Number Publication Date
JPS57139923A true JPS57139923A (en) 1982-08-30

Family

ID=12117249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56023683A Pending JPS57139923A (en) 1981-02-21 1981-02-21 Forming method for pattern by electron beam

Country Status (1)

Country Link
JP (1) JPS57139923A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999063406A1 (en) * 1998-05-30 1999-12-09 University Of Dundee Silver based photomasks
WO2015184719A1 (en) * 2014-06-07 2015-12-10 北京工业大学 Method for direct nanometre etching or printing using electron beam in humid environment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999063406A1 (en) * 1998-05-30 1999-12-09 University Of Dundee Silver based photomasks
WO2015184719A1 (en) * 2014-06-07 2015-12-10 北京工业大学 Method for direct nanometre etching or printing using electron beam in humid environment

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