GB9515230D0 - Method of manufacturing a photo mask for manufacturing a semiconductor device - Google Patents

Method of manufacturing a photo mask for manufacturing a semiconductor device

Info

Publication number
GB9515230D0
GB9515230D0 GBGB9515230.2A GB9515230A GB9515230D0 GB 9515230 D0 GB9515230 D0 GB 9515230D0 GB 9515230 A GB9515230 A GB 9515230A GB 9515230 D0 GB9515230 D0 GB 9515230D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
photo mask
width
semiconductor device
chrome
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9515230.2A
Other versions
GB2291982A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9515230D0 publication Critical patent/GB9515230D0/en
Publication of GB2291982A publication Critical patent/GB2291982A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A photo mask used for manufacturing a semiconductor device which can form a photoresist pattern (4) of the same width as the chrome pattern (1) of the photo mask has dummy patterns (2) of a certain width (C) chrome spaced a certain distance (B) from both sides of an isolated region of the chrome pattern, which prevents variation in width of the photoresist pattern formed on a wafer caused by the proximity effect caused by a difference in light amount at the time of exposure. Preferably the distance (B) is 0.3 to 0.8 microns and the width (C) is 0.05 to 0.2 microns. <IMAGE>
GB9515230A 1994-07-28 1995-07-25 Photo masks Withdrawn GB2291982A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940018408A KR960005756A (en) 1994-07-28 1994-07-28 Photomask Manufacturing Method for Semiconductor Device Manufacturing

Publications (2)

Publication Number Publication Date
GB9515230D0 true GB9515230D0 (en) 1995-09-20
GB2291982A GB2291982A (en) 1996-02-07

Family

ID=19389111

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9515230A Withdrawn GB2291982A (en) 1994-07-28 1995-07-25 Photo masks

Country Status (4)

Country Link
KR (1) KR960005756A (en)
CN (1) CN1123420A (en)
DE (1) DE19527683A1 (en)
GB (1) GB2291982A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821014A (en) * 1997-02-28 1998-10-13 Microunity Systems Engineering, Inc. Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
JP3085259B2 (en) * 1997-09-17 2000-09-04 日本電気株式会社 Exposure pattern and method for generating the same
KR20000045422A (en) * 1998-12-30 2000-07-15 김영환 Method for forming fine pattern of semiconductor device
US6436585B1 (en) * 2000-02-25 2002-08-20 International Business Machines Corporation Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs
JP2001312045A (en) * 2000-05-02 2001-11-09 Sharp Corp Method for forming mask
JP3425414B2 (en) * 2000-08-30 2003-07-14 株式会社東芝 Manufacturing method of mask
US20040058550A1 (en) * 2002-09-19 2004-03-25 Infineon Technologies North America Corp. Dummy patterns for reducing proximity effects and method of using same
CN1299164C (en) * 2003-04-08 2007-02-07 旺宏电子股份有限公司 Method for eliminating key size deviation of dense pattern and single pattern

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
JPH06188270A (en) * 1992-12-15 1994-07-08 Mitsubishi Electric Corp Manufacture of field effect transistor and pattern transfer mask

Also Published As

Publication number Publication date
DE19527683A1 (en) 1996-02-01
KR960005756A (en) 1996-02-23
GB2291982A (en) 1996-02-07
CN1123420A (en) 1996-05-29

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)