JPH1126355A - Exposure mask and manufacture of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent size errors, caused by etching of a shade film and generation of a remained thin film of the shade film, and improve the accuracy of exposure. SOLUTION: This method of manufacturing a photomask comprises the formation of a resist pattern 12 on a transparent substrate 11 consisting of quartz, a formation of a groove section 13 by selectively etching the substrate 11 masked with the resist pattern, a formation of a shade film 14 consisting of silicon on a surface of the substrate 11 having the groove section 13, and an etching of the shade film 14 and the substrate 11 by CMP(chemical mechanical polishing) to a predetermined extent. The shade film 14 is embedded in the groove 13, and the surface of the substrate is planed as well. A transparent film is formed on the substrate 11 formed by the shade film on its surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an exposure mask used for manufacturing a semiconductor integrated circuit or the like and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, in the manufacture of semiconductor memory devices, high integration of elements and wirings constituting circuits and miniaturization of patterns have been promoted. For example, a DRAM (Dynamic Random Access Memory) which is a typical semiconductor memory device is used.
It is said that the formation of a 1-Gbit DRAM requires a pattern with a design rule of 0.15 μm. Here, the design rule may be considered to be equivalent to the minimum dimension.

In a lithography technique for transferring a circuit pattern formed on a photomask onto a semiconductor wafer by a projection optical system or the like, the precision of a transfer source pattern is most important, and a pattern is formed on a photomask with high precision. Is required. For example, it is said that the pattern formation accuracy of a photomask required for manufacturing a 1 Gbit DRAM is ± 15 nm as an error from a desired value.

Conventionally, this type of photomask is shown in FIG.
It is created by the steps shown in (a) to (d). That is, a light-shielding film 72 made of a metal such as chromium or a metal oxide is formed on a transparent substrate 71, a resist 73 is applied thereon, and a pattern is transferred by, for example, an electron beam drawing apparatus to form a resist pattern. Next, the light shielding film 72 exposed using the resist pattern as a mask is selectively etched to form a light shielding film pattern.

Here, in the etching of the light shielding film, when the light shielding film is formed of chromium or chromium oxide,
Wet etching or dry etching is used. In wet etching, etching is generally performed using a solution containing ceric ammonium nitrate. In dry etching, etching is performed using a gas containing chlorine, for example, using a parallel plate type RIE (reactive ion etching) apparatus. When the light-shielding film is formed of molybdenum silicide, the pattern is generally formed using dry etching.

However, when a light-shielding film is formed by wet etching, there are the following problems. FIG.
When a mask having a design pattern as shown in FIG. 3A is formed by wet etching, the etching proceeds isotropically, and a dimensional conversion difference equivalent to the light-shielding film thickness is generated. Therefore, the formed pattern has a shape as shown in FIG. That is, it is impossible to form a light-shielding pattern with high accuracy.

In the case of dry etching, there are the following problems. That is, although the light-shielding film is formed of a metal film, the selectivity of the metal film to the resist film serving as an etching mask cannot be generally sufficient in RIE. Therefore, as shown in FIG. 8B, when the light-shielding film is etched using the resist as an etching mask, there is a problem that a conversion difference occurs as in the case of wet etching.

Further, as shown in FIG. 9A, the etching of the light-shielding film 72 is hindered by water or the like attached to the surface during the etching, and a thin skin residue 76 of the light-shielding film 72 is generated. This is difficult to detect during a defect inspection.
Further, in the usual mask structure, when the light shielding film 72 is brushed and cleaned, there is a problem that the light shielding film 72 is peeled off by friction.

On the other hand, as shown in FIG. 9B, a holder (pellicle film) 78 is provided on the mask to prevent foreign substances from adhering on the photomask and being transferred to the wafer.
In some cases, a jig (frame) 77 for holding the frame is provided. However, in some cases, such as when the air sealed between the pellicle film 78 and the substrate 71 fluctuates in pressure during transport of the mask, the film 78 may bend due to expansion of the air. In order to solve this problem, an air hole is provided in the frame 79 in some cases. However, foreign matter may enter the air hole 79 and impair the function as a holder.

Next, the phase shift mask will be described.
With the recent pattern miniaturization, a phase shift mask exposure method has been developed that improves the contrast of a projected image by changing the phase of exposure light passing through a photomask. The mainstream of the phase shift mask system is to replace a light-shielding portion in a photomask with a translucent film, as shown in Japanese Patent Application Laid-Open No. 6-75361, and furthermore, a position with respect to exposure light passing through an opening. 180
This is a halftone type phase shift mask that changes the degree.

When forming a halftone type phase shift mask, when etching a halftone film,
In addition to the dimensional conversion difference similar to the photomask described above, there is a difficulty that the etching selectivity between the halftone film and the underlying transparent substrate must be sufficiently high. That is, when the selectivity is low, the phase difference corresponding to the depth of the over-etched substrate is added, and not only the phase difference is controlled at the time of film formation, but also the etching control becomes important. Further, in the halftone film, the characteristic deterioration becomes a problem by irradiating the ultraviolet light as exposure light many times. That is, the surface of the film is oxidized by irradiation with ultraviolet light, the phase difference and the transmittance change, and the exposure characteristics deteriorate. Therefore, there is a problem that durability used for exposure is poor.

[0012]

As described above, conventionally, in a photomask used in the lithography technique, there is a problem that a dimensional conversion difference due to etching of the light shielding film, a thin skin of the light shielding film, and the like occur. This causes a deterioration in the pattern formation accuracy of the photomask, and as a result, there is a problem in that the exposure accuracy is reduced.

In a halftone type phase shift mask, if the substrate is over-etched during the patterning of the half-tone film, the phase difference is shifted by the depth thereof, so that the etching control is extremely important. further,
The halftone film has a problem in that the surface is oxidized by irradiation with ultraviolet light, and the durability is poor, such as a change in retardation and transmittance.

The present invention has been made in view of the above circumstances, and an object thereof is to prevent a dimensional conversion difference due to etching of a light-shielding film and a thin skin of the light-shielding film from occurring. An object of the present invention is to provide an exposure mask and a method of manufacturing the same, which can contribute to improvement of exposure accuracy.

Another object of the present invention is to provide a halftone type exposure mask capable of eliminating a phase difference caused by patterning of a halftone film and improving the durability of the halftone film, and a method of manufacturing the same. Is to provide.

[0016]

[Means for Solving the Problems]

(Structure) In order to solve the above problem, the present invention employs the following structure. (1) An exposure mask in which a pattern is formed from a transparent part and a light-shielding part, comprising: a transparent substrate having a groove formed in a surface part thereof; and a light-shielding film embedded and formed in the groove. Are flattened.

(2) In addition to (1), a transparent film is formed on the light-shielding film forming surface of the substrate. (3) In addition to (1), another transparent substrate is bonded to the light-shielding film forming surface of the substrate. (4) In the method for manufacturing an exposure mask, a step of forming a resist pattern on a transparent substrate, selectively etching the substrate using the resist pattern as a mask to form a groove, and forming a groove on the surface of the substrate having the groove Forming a light-shielding film on the substrate, and embedding the light-shielding film in the groove and flattening the substrate surface by etching the light-shielding film by a predetermined amount.

(5) In addition to (4), a step of forming a transparent film on the light-shielding film forming surface of the substrate is included. (6) In addition to (4), a step of bonding another transparent substrate to the light-shielding film forming surface of the substrate is included.

(7) In (4) to (6), when etching the light-shielding film, etching by chemical / mechanical polishing is performed. (8) In a halftone type phase shift mask, a transparent substrate having a groove formed on the surface thereof, a semi-transparent film formed on the bottom and side walls of the groove, and the same type of material as the substrate, wherein the semi-transparent A transparent film embedded and formed so that the substrate surface becomes flat in the groove in which the film is formed,
The thickness of the translucent film is set so that the phase difference between the exposure light passing through the groove and the exposure light passing through other than the groove is close to 180 degrees.

(9) In the method of manufacturing a halftone phase shift mask, a step of forming a resist pattern on a transparent substrate and selectively etching the transparent substrate using the resist pattern as a mask to form a groove, On the surface of the substrate having a semi-transparent film having a thickness smaller than the depth of the groove, and a phase difference between the exposure light passing through the groove and the exposure light passing other than the groove when the mask is completed becomes near 180 degrees. Forming a film, forming a transparent film made of the same material as the substrate on the surface of the substrate having the groove and the translucent film, etching the transparent film and the translucent film by a predetermined amount. And embedding a transparent film and a translucent film in the groove and flattening the substrate surface.

(10) In (9), the transparent substrate is a quartz substrate, and the transparent film is a silicon oxide film. (Function) According to the present invention, since the light-shielding film is buried in the groove formed in the surface portion of the transparent substrate, a dimensional conversion difference due to the etching of the light-shielding film occurs, a thin skin of the light-shielding film remains, and the like. Can be prevented, and the dimensional accuracy of the mask can be improved, which can contribute to the improvement of the exposure accuracy.

Further, by forming a transparent film or attaching a transparent substrate on the substrate surface, it is possible to improve the resistance during mask cleaning. At this time, unlike the case where a pellicle is used, no air is interposed between the substrate and the transparent film or the transparent substrate. Therefore, it is possible to solve the problem that the pellicle film bends due to the atmospheric pressure fluctuation.

Further, by forming the halftone film not at the substrate surface but at the bottom of the groove formed on the substrate surface,
It is possible to eliminate the deviation of the phase difference due to the patterning of the halftone film and to improve the durability of the halftone film.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the illustrated embodiments. (First Embodiment) FIG. 1 is a sectional view showing a manufacturing process of an exposure mask according to a first embodiment of the present invention.

First, as shown in FIG. 1A, quartz (S
a positive resist 12 on a transparent substrate 11 made of iO ₂ )
Was applied. Next, as shown in FIG. 1B, a pattern was drawn using a laser drawing apparatus, and developed using an alkaline developer to form a resist pattern.

Next, as shown in FIG. 1C, the quartz substrate 11 was etched using the resist 12 as an etching mask to form a groove 13. Here, the etching is RI
Using an E (reactive ion etching) device, CHF ₃
And a flow rate of 10
0 sccm, 40 sccm, 200 sccm, pressure 40
The test was performed at mTorr and an RF power density of 0.44 W / cm ² .

Next, as shown in FIG. 1D, the substrate was immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution, and the resist 12 was peeled off. Next, as shown in FIG. 1E, a silicon film 14 serving as a light shielding film was formed on the substrate 11. here,
Using a sputtering device and a silicon target,
Ar gas, a flow rate of 40 sccm, a pressure of 0.1 Pa, and a DC power applied to the target of 0.3 W / cm ² were used.

Next, as shown in FIG. 1 (f), the substrate 11 on which the silicon film 14 is formed is etched and flattened by chemical mechanical polishing (hereinafter, CMP: Chemical Mechanical Polishing). A mask having a structure in which a silicon film 14 is embedded in a dug portion (groove) 13 of FIG. The polishing time was set to be 5% longer than the end point in order to prevent the thin skin of Si from remaining.

Here, the mask of this embodiment is used in an exposure apparatus having a KrF excimer laser (wavelength: 248 nm) as a light source, and at the stage of FIG.
The etching depth was adjusted so that the thickness of the light shielding film 14 became a predetermined value. The thickness is set to 100 nm or more in order to have a sufficient light shielding property. Here, the refractive index n = 1.6 of the silicon film at a wavelength of 248 nm.
9. From the extinction coefficient k = 2.76, the transmittance of the film having a thickness of 100 nm is calculated to be 0.001% or less, which indicates that the film has a sufficient light-shielding property.

Therefore, in the above etching step, C
In consideration of over-etching in the MP process,
The digging depth of No. 1 was adjusted to be 105 nm.
In the above-mentioned etching step, the etching selectivity of the quartz substrate 11 to the resist film 14 is 40 or more,
The dimensional conversion difference in the etching could be suppressed to 1 nm or less.

As described above, according to this embodiment, the light shielding film 1
4 instead of patterning by etching,
Since the patterning is performed by the MP, it is possible to create a faithful and highly accurate mask with a design pattern as shown in FIG.

In the present embodiment, silicon is used as the material of the light-shielding film 14, but the material is not limited to this, and any film having a light-shielding property with an extinction coefficient of 0.2 or more may be used. . Further, the surface of the substrate was flattened by using the CMP method, but the present invention is not limited to this.
In step (a), a resist may be applied on the light-shielding film 14, and RIE may be performed to flatten the surface under the condition that the etching rates of the resist and the light-shielding film 14 become uniform. Further, RIE may be performed after a light-shielding film is formed and sufficiently flattened.

Further, in order to improve the exposure performance,
It is desirable to suppress the influence of light on the resist on the wafer due to the reflection of light on the light-shielding film surface. As a method for this, there is a method of oxidizing the light-shielding film surface so as to suppress the reflectance of the light-shielding film surface after performing the mask forming step of the present embodiment. For example, a substrate is placed in a chamber and a wavelength of 172 n
By adjusting the irradiation time of the ultraviolet light using a device that irradiates m ultraviolet light, it is possible to adjust the thickness of the surface oxide film and reduce the reflectance.

The present embodiment can be applied not only to a normal light-shielding mask but also to a halftone type phase shift mask. However, in this case, the depth at which the substrate is dug is
It is necessary to control the phase difference of the halftone film so that the transmittance becomes a desired value.

(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating a schematic configuration of an exposure mask according to the embodiment. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, the surface of the substrate including the light-shielding film 14 is covered with a protective film 21 in order to prevent the light-shielding film 14 from peeling off during cleaning. A mask is created according to the method of the first embodiment, and a defect is inspected by a mask defect inspection device to confirm that there is no defect. Then, as shown in FIG. 2, an SiO ₂ film 21 as a transparent film is formed on the surface planarized by the CMP method.

With such a configuration, the same effects as those of the first embodiment can be obtained, and the following effects can be obtained. That is, since the SiO ₂ film 21 is formed on the surface, the light-shielding film 14 does not peel off even when the mask is cleaned, and the durability can be improved. Further, unlike the case where a pellicle film is used, there is no inconvenience that the film is bent by expansion of air.

Note that what is formed on the substrate surface is not limited to SiO ₂ , but may be another transparent film. In the present embodiment, it is desirable to reduce the reflectance of the light-shielding film pattern portion and the opening. Although a quartz substrate exists under the transparent film in the opening, a material having a refractive index between the refractive index n = 1.5 of the quartz substrate 11 and the refractive index n0 = 1.0 of air is desirable. This includes, for example, magnesium fluoride, calcium fluoride and the like. It is desirable to adjust the thickness of the transparent film 21 in order to suppress the reflectance of the light-shielding film pattern portion.

(Third Embodiment) FIG. 3 shows a second embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating a schematic configuration of an exposure mask according to the embodiment. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, in order to prevent the light-shielding film 14 from peeling off during cleaning, another quartz substrate (the second transparent substrate) is provided on the surface of the quartz substrate (first transparent substrate) 11 including the light-shielding film 14. ) 31 is attached.

A mask is prepared according to the method of the first embodiment, and a defect is inspected by a mask defect inspection device to confirm that there is no defect. Then, as shown in FIG.
Another quartz substrate 31 is attached to the surface flattened by the P method. Here, on both surfaces to be bonded, the mask substrate on which the pattern is formed is sufficiently flat by polishing, and the other substrate is also guaranteed to be 1 μm or less in a plane excluding the outer periphery of 3 mm of the mask.

Even with such a configuration, the transparent substrate 31
, The same effect as in the second embodiment can be obtained. (Fourth Embodiment) FIG. 4 is a sectional view showing a manufacturing process of an exposure mask according to a fourth embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In the method according to the first embodiment, a laser writing apparatus is used for exposing the resist. However, when an electron beam writing apparatus is used, since the quartz substrate underlying the resist is insulative, the writing area is Is charged up, and there is a problem that the position of the next area to be drawn fluctuates.

One way to avoid this problem is to select a resist that is conductive, which is the first.
A mask can be created in the same manner as in the embodiment. There is a method using a conductive film above or below a resist, which will be described below.

First, as shown in FIG.
a positive resist 12 on a transparent substrate 11 made of iO ₂ )
Was applied, and a conductive film 41 was formed thereon. Then
As shown in FIG. 4B, a pattern was drawn using an electron beam drawing apparatus, and developed using an alkaline developer to form a resist pattern.

Next, as shown in FIG. 4C, the quartz substrate 11 was etched by RIE using the resist 12 as an etching mask to form grooves 13 as in the first embodiment. Further, as shown in FIG. 4D, the substrate was immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution, and the resist 12 and the conductive film 41 were peeled off.

Next, as shown in FIG. 4E, a silicon carbide film 44 serving as a light shielding film was formed on the substrate 11. Next, as shown in FIG. 4F, the substrate is etched by the CMP method to be flattened, and the dug portion (groove) 1 of the substrate 11 is formed.
A mask having a structure in which a silicon carbide film 44 was embedded in No. 3 was prepared.

Here, the wavelength 248 of the silicon carbide film 44
Since the extinction coefficient in nm is as small as 0.25,
The thickness was set to 600 nm in order to obtain light-shielding properties. Therefore, when the quartz substrate 11 is etched,
I dug into a strong depth.

Even when the etching depth is increased, the etching selectivity of quartz to resist is high, so that a dimensional conversion difference hardly occurs, and a highly accurate mask can be formed.

(Fifth Embodiment) FIG. 5 shows a fifth embodiment of the present invention.
FIG. 8 is a cross-sectional view showing a manufacturing process of the exposure mask according to the embodiment. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted.

First, as shown in FIG.
In the same manner as in the first embodiment, a positive resist 12 is applied on a transparent substrate 11 made of quartz (SiO ₂ ), pattern-drawn using a laser drawing device, and developed using an alkaline developer to form a resist pattern. Was formed. Subsequently, the quartz substrate 11 was etched using the resist 12 as an etching mask. Thereafter, as shown in FIG. 5B, the substrate was immersed in a mixed solution of sulfuric acid and hydrogen peroxide solution, and the resist 12 was peeled off.

Next, as shown in FIG. 5C, a translucent silicon nitride film 54 serving as a halftone film as a phase shifter was formed. Here, the silicon nitride film 54 is not formed so as to fill the groove 13, but is formed in the groove 1.
3 was formed thinner than the depth of the groove 13 so as to be formed on the bottom and side walls.

The characteristics of the silicon nitride film 54 were adjusted so as to have predetermined transmittance and phase difference. Specifically, when the silicon nitride film 54 was formed by sputtering, an N ₂ gas and an O ₂ gas were mixed with an Ar gas using a silicon target, thereby adjusting the film quality. In this embodiment, the flow rates of Ar gas, N ₂ gas, and O ₂ gas are set to 30 sccm, 10 sccm, and ₂ sccm, respectively, and a pressure of 0.1 Pa is applied to the target.
C power density was set to 0.3 W / cm ² .

Next, as shown in FIG. 5D, a transparent film 55 made of a SiO ₂ film was formed on the substrate 11 having the translucent film 54. This transparent film 55 is formed sufficiently thicker than the depth of the groove 13 so as to completely fill the groove 13.

Next, as shown in FIG. 5E, the substrate on which the translucent film 54 and the transparent film 55 are formed is etched and flattened by the CMP method, and the substrate 11 is dug (groove 1).
3) A translucent film 54 is formed on the wall surface, and a transparent film 5 is formed thereon.
A mask having a structure in which the cap of No. 5 was embedded was prepared.

Here, it is difficult to detect the end point on the substrate surface during the CMP. This is a transparent film (SiO ₂ film) on the quartz substrate 11 and the translucent film (silicon nitride film) 54.
This is because 55 is a film of substantially the same quality. But CMP
Is exceeded, the refractive index and the thickness of the silicon nitride film 54 determine the phase difference because the quartz substrate 11 and the SiO ₂ film 55 have substantially the same refractive index.
It does not depend on the thickness of the O ₂ film 55. That is, even if the CMP is exceeded, there is no change in the phase difference.

Conventionally, in the case where a silicon nitride film formed on a flat substrate surface is selectively etched by RIE, it is difficult to secure an etching selectivity between silicon nitride and SiO _2. The phase difference is determined from both of the substrate depths. Therefore, it is difficult to adjust the phase difference only by the conditions for forming the silicon nitride film. On the other hand, in the present embodiment, the same amount of the SiO ₂ film 5 as the substrate 11 to be over-etched by CMP is used.
5 is over-etched, so that the substrate and Si
Since the O ₂ film 55 is the same kind of material, the silicon nitride film 5
The phase difference can be adjusted only by adjusting the film forming condition of No. 4.

As described above, according to the present embodiment, the phase difference does not change even when over-etching is performed by CMP. Therefore, only by adjusting the film forming conditions of the silicon nitride film 54,
Adjustment of the phase difference is possible. Further, the silicon nitride film 5
By covering the surface of No. 4 with a SiO ₂ film 55 of substantially the same quality as the substrate 11, the surface of the portion functioning as a halftone film is not exposed, and the change in film quality due to multiple irradiations of KrF light is suppressed. Can be. Also, it has excellent washing resistance.

The present invention is not limited to the above embodiments. In the embodiment, examples of the normal mask and the halftone type phase shift mask have been described. However, the present invention can be applied to a Levenson type phase shift mask. After the step shown in FIG. 1F, FIG.
As shown in FIG. 6, a phase shift film 61 is formed,
As shown in (b), the phase shift portion 62 may be formed by selectively etching the substrate 11.

The light-shielding film embedded in the trench is not limited to silicon or silicon carbide at all, and can be changed as appropriate according to the specifications. Similarly, the transparent film and the transparent substrate formed on the substrate surface are not limited to SiO ₂ at all, and can be appropriately changed according to the specifications. However, in the case of a halftone type phase shift mask, it is necessary to use the same kind of material as the transparent substrate or a material having the same optical constant. In addition, various modifications can be made without departing from the scope of the present invention.

[0061]

As described above in detail, according to the present invention, since the light shielding film is buried in the groove formed in the surface portion of the transparent substrate, the dimensional change caused by the etching of the light shielding film, It is possible to prevent a thin skin residue of the light-shielding film or the like from occurring, thereby contributing to an improvement in exposure accuracy. In addition, by forming a transparent film on the surface of the substrate or attaching the transparent substrate thereto, the resistance during mask cleaning can be improved.

When the present invention is applied to a halftone type phase shift mask, the halftone film is formed not at the substrate surface but at the bottom of the groove formed on the substrate surface portion, so that the phase difference caused by the patterning of the halftone film is reduced. It is possible to eliminate the displacement and to improve the durability of the halftone film.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a manufacturing process of an exposure mask according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating a schematic configuration of an exposure mask according to a second embodiment.

FIG. 3 is a sectional view showing a schematic configuration of an exposure mask according to a third embodiment.

FIG. 4 is a sectional view showing a manufacturing process of an exposure mask according to a fourth embodiment.

FIG. 5 is a sectional view showing a manufacturing process of an exposure mask according to a fifth embodiment.

FIG. 6 is a sectional view showing a modification of the present invention.

FIG. 7 is a cross-sectional view showing a manufacturing process of a conventional exposure mask.

FIG. 8 is a plan view for explaining a problem of a dimensional conversion difference in a conventional exposure mask creating method.

FIG. 9 is a cross-sectional view for explaining a problem of a conventional exposure mask.

[Explanation of symbols]

11 ... a quartz substrate (transparent substrate) 12 ... positive resist 13 ... groove 14 ... silicon film (light shielding film) 21 ... SiO ₂ film (transparent film) 31 ... a quartz substrate 44 ... silicon carbide film (light shielding film) 54 ... silicon nitride Film (semi-transparent film) 55 ... SiO ₂ film (transparent film) 61 ... Phase shift film 62 ... Phase shift part

Claims (9)

[Claims] 1. An exposure apparatus comprising: a transparent substrate having a groove formed in a surface portion thereof; and a light-shielding film buried in the groove, wherein the surface of the substrate is flattened. mask. 2. A transparent substrate having a groove formed on a surface thereof, a light-shielding film buried in the groove so that the surface of the substrate is flat, and a transparent film formed on a light-shielding film forming surface of the substrate. An exposure mask comprising a film. 3. A first transparent substrate having a groove formed on a surface thereof, a light shielding film embedded in the groove so that the surface of the first transparent substrate is flat, and a first transparent substrate. An exposure mask, comprising: a second transparent substrate bonded to a light-shielding film forming surface of the substrate. 4. A resist pattern is formed on a transparent substrate,
A step of forming a groove by selectively etching the substrate using the resist pattern as a mask, a step of forming a light-shielding film on the surface of the substrate having the groove, and etching the light-shielding film by a predetermined amount; Embedding a light-shielding film in the groove and flattening the substrate surface. 5. A resist pattern is formed on a transparent substrate,
A step of forming a groove by selectively etching the substrate using the resist pattern as a mask, a step of forming a light-shielding film on the surface of the substrate having the groove, and etching the light-shielding film by a predetermined amount; A method for manufacturing an exposure mask, comprising: a step of embedding a light-shielding film in a groove and flattening a substrate surface; and a step of forming a transparent film on a light-shielding film formation surface of the substrate. 6. A step of forming a resist pattern on the first transparent substrate, selectively etching the first transparent substrate using the resist pattern as a mask to form a groove, and forming the first transparent substrate having the groove. Forming a light-shielding film thereon;
A step of embedding the light-shielding film in the groove and flattening the surface of the first transparent substrate by etching the light-shielding film by a predetermined amount, and then forming a second transparent substrate on the light-shielding film forming surface of the first transparent substrate. And a step of bonding the mask. 7. The method of manufacturing an exposure mask according to claim 4, wherein the etching of the light-shielding film is performed by chemical / mechanical polishing. 8. A transparent substrate having a groove formed on its surface, a translucent film formed on the bottom and side walls of the groove, and a groove formed of the same material as the substrate and having the translucent film formed thereon. A transparent film buried and formed so that the substrate surface becomes flat, wherein the thickness of the translucent film is such that the phase difference between the exposure light passing through the groove and the exposure light passing through other than the groove is different. 180
A halftone type exposure mask, which is set so as to be close to a degree. 9. A resist pattern is formed on a transparent substrate,
Forming a groove by selectively etching a transparent substrate using the resist pattern as a mask; and exposing light and a groove on the surface of the substrate having the groove, the exposure light being thinner than the depth of the groove and passing through the groove when the mask is completed. A step of forming a translucent film to a thickness such that the phase difference with the exposure light passing therethrough is close to 180 degrees, and from the same material as the substrate on the surface of the substrate having the groove and the translucent film. Forming a transparent film, and etching the transparent film and the translucent film by a predetermined amount, thereby embedding the transparent film and the translucent film in the grooves and flattening the substrate surface. A method for producing a halftone type exposure mask.