JP2005107340A - Photomask plate and its making method - Google Patents
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- JP2005107340A JP2005107340A JP2003342528A JP2003342528A JP2005107340A JP 2005107340 A JP2005107340 A JP 2005107340A JP 2003342528 A JP2003342528 A JP 2003342528A JP 2003342528 A JP2003342528 A JP 2003342528A JP 2005107340 A JP2005107340 A JP 2005107340A
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Abstract
Description
本発明は、フォトリソグラフィ技術に使用されるフォトマスク版とその作成方法に関する。 The present invention relates to a photomask plate used in photolithography technology and a method for producing the same.
従来より、フォトマスク版1と、このフォトマスク版1を用いたフォトリソグラフィ技術は、微細な配線の作成を一度のプロセスで大量に行なうことができるという特徴を有しているため、液晶表示パネル、プリント配線基板、半導体などの製造分野において多用されている。 Conventionally, a photomask plate 1 and a photolithographic technique using the photomask plate 1 have a feature that a large amount of fine wiring can be formed in one process. In the field of manufacturing printed circuit boards, semiconductors, etc.
図3は、従来のフォトマスク版1(図3g参照)と、そのフォトマスク版1を作成する工程を示す説明図である。 FIG. 3 is an explanatory view showing a conventional photomask plate 1 (see FIG. 3g) and a process for producing the photomask plate 1. As shown in FIG.
この図に示すように、従来のフォトマスク版1は、次の基本工程と、この基本工程中に於いて随時行われる洗浄を経て作成されている。 As shown in this figure, the conventional photomask plate 1 is formed through the following basic process and cleaning performed as needed during the basic process.
まず、ガラス等の透明基板2の表面を研磨し(図3a)、その研磨された表面上にマスクとなる遮光膜5を形成する(図3b)。次に、前記遮光膜5の表面にレジスト3(感光剤)を塗布し(図3c)、前記レジスト3に対して感光波長光(紫外線)を照射してマスクのパターンを露光し、転写する(図3d)。続いて、感光したレジスト3を現像し、洗浄水で洗浄する(図3e)。 First, the surface of the transparent substrate 2 such as glass is polished (FIG. 3a), and a light shielding film 5 serving as a mask is formed on the polished surface (FIG. 3b). Next, a resist 3 (photosensitive agent) is applied to the surface of the light-shielding film 5 (FIG. 3c), and the resist 3 is irradiated with photosensitive wavelength light (ultraviolet rays) to expose and transfer the mask pattern ( FIG. 3d). Subsequently, the exposed resist 3 is developed and washed with washing water (FIG. 3e).
このとき、フォトリソグラフィ技術には、露光により感光した部分を除去するように現像し、感光していない部分をマスクパターン6とするポジ型レジストを用いる方法と、逆に、露光により感光した部分を残してマスクパターン6とするように現像し、感光していない部分を除去するネガ型レジストを用いる方法とがある。いずれの方法によっても、所望のパターンのフォトマスク版1を作成することは可能であるが、図3に示す従来例では、前記ポジ型レジストを用いるのフォトリソグラフィ技術により、前記フォトマスク版1を作成する場合を示す。 At this time, in the photolithography technique, development is performed so as to remove a portion exposed by exposure, and a method using a positive resist in which a portion not exposed is used as a mask pattern 6, conversely, a portion exposed by exposure is exposed. There is a method of using a negative resist that is developed so as to leave the mask pattern 6 and removes the unexposed portion. Although any method can produce the photomask plate 1 having a desired pattern, in the conventional example shown in FIG. 3, the photomask plate 1 is formed by photolithography using the positive resist. Indicates the case of creation.
続いて、レジスト3により覆われていない部分の遮光膜5をエッチング除去する(図3f)。このエッチングの方法は、基板をエッチング液に漬けるウェットエッチング方法、エッチングガス雰囲気中に基板を配置し、イオンなどを用いてエッチングするドライエッチング方法などを採用することができる。 Subsequently, the portion of the light shielding film 5 not covered with the resist 3 is removed by etching (FIG. 3F). As this etching method, a wet etching method in which the substrate is immersed in an etching solution, a dry etching method in which the substrate is placed in an etching gas atmosphere, and etching is performed using ions or the like can be employed.
そして、最後に、前記遮光膜5を覆っていたレジスト3を水酸化ナトリウムを用いて剥離除去し、フォトマスク版1を作成する(図3g)。 Finally, the resist 3 covering the light-shielding film 5 is peeled and removed using sodium hydroxide to produce a photomask plate 1 (FIG. 3g).
このような基本工程を経て作成されたフォトマスク版1は、図3gに示すように透明基板2の表面に遮光膜5が凸状に形成されている。そのため図4に示すように、フォトマスク版1の使用後に、随時、洗浄を行っているといっても、前記凸状の遮光膜5が形成されている遮光部と、遮光膜5が形成されていない透過部の境界である隔部には、本来なら除去されるべき異物7が残留しやすかった。 The photomask plate 1 produced through such basic steps has a light shielding film 5 formed in a convex shape on the surface of the transparent substrate 2 as shown in FIG. 3g. Therefore, as shown in FIG. 4, even if it is said that cleaning is carried out as needed after use of the photomask plate 1, the light shielding portion where the convex light shielding film 5 is formed and the light shielding film 5 are formed. The foreign matter 7 that should be removed is likely to remain in the partition that is the boundary of the transmission portion that is not.
そのため、前述のフォトマスク版1の洗浄後などに、残留する異物7の有無を検査する検査工程を加え、異物7の残留が検出された場合には、もう一度洗浄をやり直すことが必須となっていた。 For this reason, after the cleaning of the photomask plate 1 described above, an inspection process for inspecting the presence or absence of the remaining foreign matter 7 is added, and when the residual foreign matter 7 is detected, it is essential to perform cleaning again. It was.
また、前記隔部に異物7が付着した状態のフォトマスク版1は、図4に示すように、前記異物7が当該フォトマスク版1の透過部として機能する領域上に残留し、前記基板に形成されたマスクパターン6と同様に作用することとなるため、当該フォトマスク版1を用いてパターン転写を行なう対象物、例えば、液晶表示パネルの電極パターンを形成する透明基板2などに、目的のパターンを転写させることができないというパターニング不良の問題が生じることがあった。このように、パターン転写を行なう対象物に目的のパターンを得られなければ、形成されるパターンを有する部材の機能および動作に支障が生じる。例えば、前述の液晶表示パネルの場合においては表示電極パターンが短絡または断線した場合、当該液晶表示パネルの表示不良といった欠点となって現れることも懸念される。 Further, as shown in FIG. 4, the photomask plate 1 with the foreign matter 7 attached to the partition portion remains on the region where the foreign matter 7 functions as a transmission portion of the photomask plate 1, so Since it acts in the same manner as the formed mask pattern 6, the object to be transferred using the photomask plate 1, for example, the transparent substrate 2 on which the electrode pattern of the liquid crystal display panel is formed is the target. There has been a problem of patterning failure that the pattern cannot be transferred. As described above, unless a target pattern is obtained as an object to be subjected to pattern transfer, the function and operation of the member having the pattern to be formed are hindered. For example, in the case of the liquid crystal display panel described above, there is a concern that when the display electrode pattern is short-circuited or disconnected, it may appear as a defect such as a display defect of the liquid crystal display panel.
そこで、本発明は、洗浄後のフォトマスク版に異物が残留し難い形状とされ、パターニング精度を向上させることのできるフォトマスク版と、簡単な方法で、しかも確実に前記フォトマスク版を作成することができ、洗浄後における検査工程および再洗浄工程を削減して生産性を向上させることができ、しかも、コストの削減も可能とするフォトマスク版の作成方法を提供することを目的とするものである。 In view of this, the present invention provides a photomask plate that has a shape in which foreign matter is unlikely to remain on the washed photomask plate and can improve the patterning accuracy, and the photomask plate is surely produced by a simple method. An object of the present invention is to provide a method for producing a photomask plate that can improve productivity by reducing the inspection process and re-cleaning process after cleaning, and that can also reduce costs It is.
前述した目的を達成するため、本発明のフォトマスク版は、透明基板に遮光膜からなる所望の形状のマスクパターンが形成されたフォトマスクフォトマスク版において、前記マスクパターンは、透明基板の表面にマスクパターンの形状をなす凹部を形成し、該凹部内に、遮光膜が前記透明基板の表面に突出しないように形成されてなることを特徴とする。 In order to achieve the above-described object, the photomask plate of the present invention is a photomask photomask plate in which a mask pattern having a desired shape made of a light-shielding film is formed on a transparent substrate, and the mask pattern is formed on the surface of the transparent substrate. A recess having a mask pattern shape is formed, and a light shielding film is formed in the recess so as not to protrude from the surface of the transparent substrate.
また、本発明のフォトマスク版の作成方法は、透明基板の表面に所望のマスクパターンの形状をなす凹部を形成し、前記凹部が形成された前記透明基板の表面に遮光膜を積層形成し、その後、前記遮光膜が前記凹部内に収まり、かつ、前記透明基板の表面に突出しないように前記透明基板の表面を研磨して、マスクパターンを形成することを特徴とする。 Further, the method for producing a photomask plate of the present invention comprises forming a recess having a desired mask pattern shape on the surface of the transparent substrate, forming a light shielding film on the surface of the transparent substrate on which the recess is formed, Then, the mask pattern is formed by polishing the surface of the transparent substrate so that the light shielding film fits in the recess and does not protrude from the surface of the transparent substrate.
本発明のフォトマスク版は、マスクパターンが透明基板の表面と略面一に、突出しないように形成されている。 The photomask plate of the present invention is formed so that the mask pattern does not protrude substantially flush with the surface of the transparent substrate.
そして、マスクパターンが透明基板の表面と略面一に形成されたフォトマスク版においては、異物が該透明基板の表面に残留しにくく、また、当該フォトマスク版の遮光部の表面が凹状となるため、異物が凹状部分に残留する可能性はあるが、その場合に於いても、前記異物はマスクパターン上、つまり、フォトマスク版の遮光部として機能する領域上に残留することとなるため、フォトマスク版の透過部に何ら影響を与えるものではなく、マスクパターンの形状を変化させることがない。 In the photomask plate in which the mask pattern is formed substantially flush with the surface of the transparent substrate, foreign matter is unlikely to remain on the surface of the transparent substrate, and the surface of the light shielding portion of the photomask plate is concave. Therefore, foreign matter may remain in the concave portion, but even in that case, the foreign matter will remain on the mask pattern, that is, on the region functioning as the light-shielding portion of the photomask plate. It does not affect the transmission part of the photomask plate and does not change the shape of the mask pattern.
このように、本発明のフォトマスク版によれば、マスクパターン間の異物付着などによるマスクパターンの形状変化がなく、所望のマスクパターンの形状を確実に得ることができるので、当該フォトマスク版を利用したパターニングの精度を向上させることができる。 As described above, according to the photomask plate of the present invention, there is no change in the shape of the mask pattern due to adhesion of foreign matter between the mask patterns, and the desired mask pattern shape can be reliably obtained. The patterning accuracy used can be improved.
そして、本発明のフォトマスク版の作成方法によれば、前述のように、作成工程に於ける洗浄が容易になり、フォトマスク版の洗浄について、検査や再洗浄を繰り返す必要がなくなるため、生産性を向上させることができ、洗浄水や人件費などのコストの削減も可能とする。 And, according to the method for producing a photomask plate of the present invention, as described above, the cleaning in the production process is facilitated, and it is not necessary to repeat inspection and rewashing for photomask plate cleaning. The cost of washing water and labor costs can be reduced.
図1は、本発明のフォトマスク版1(図1g参照)と、そのフォトマスク版1を作成する工程を示す説明図である。 FIG. 1 is an explanatory view showing a photomask plate 1 of the present invention (see FIG. 1g) and a process for producing the photomask plate 1. FIG.
この図に示すように、本発明のフォトマスク版1は、次の基本工程と、この基本工程中に於いて随時行われる洗浄を経て作成されている。 As shown in this figure, the photomask plate 1 of the present invention is prepared through the following basic process and cleaning performed as needed during the basic process.
まず、透明基板2の表面にレジスト3を塗布する(図1a)。前記透明基板としては、Na(ナトリウム)等のアルカリ金属を含む珪酸塩ガラス(以下、ソーダガラスという。)などのガラス基板または石英基板などを用いることができる。次に、前記レジスト3に対して感光波長光(紫外線)を照射してマスクのパターンを露光し、転写する(図1b)。そして、感光したレジスト3を現像し、洗浄水で洗浄し(図1c)、前記レジスト3が除去された部分の透明基板2をエッチングして前記透明基板2の表面に所望のマスクパターン6の形状をなす凹部4を形成する(図1d)。その後、前記透明基板2の表面に残るレジスト3の上面および前記凹部4の上面に遮光膜5を形成する(図1e)。そして、前記レジスト3および当該レジスト3の上面に形成された遮光膜5を剥離除去し(図1f)、前記透明基板2の表面を、前記遮光膜5が前記凹部4内に収まり、かつ、前記透明基板2の表面上に突出しないように研磨してマスクパターン6を形成し、フォトマスク版1を作成する(図1g)。 First, a resist 3 is applied to the surface of the transparent substrate 2 (FIG. 1a). As the transparent substrate, a glass substrate such as a silicate glass (hereinafter referred to as soda glass) containing an alkali metal such as Na (sodium) or a quartz substrate can be used. Next, the resist 3 is irradiated with photosensitive wavelength light (ultraviolet rays) to expose and transfer the mask pattern (FIG. 1b). Then, the exposed resist 3 is developed, washed with washing water (FIG. 1c), and the transparent substrate 2 where the resist 3 is removed is etched to form a desired mask pattern 6 on the surface of the transparent substrate 2. A recess 4 is formed (FIG. 1d). Thereafter, a light shielding film 5 is formed on the upper surface of the resist 3 remaining on the surface of the transparent substrate 2 and the upper surface of the recess 4 (FIG. 1e). Then, the resist 3 and the light shielding film 5 formed on the upper surface of the resist 3 are peeled and removed (FIG. 1f), and the surface of the transparent substrate 2 is accommodated in the concave portion 4 by the light shielding film 5 and A mask pattern 6 is formed by polishing so as not to protrude on the surface of the transparent substrate 2, and a photomask plate 1 is prepared (FIG. 1g).
このように形成された本実施形態のフォトマスク版1は、前記マスクパターン6が透明基板2の表面から突出しないように、つまり、前記透明基板2の表面と略面一となるように形成されることとなる。そして、図1gに示すように、前記マスクパターン6が透明基板2の表面と略面一に形成されたフォトマスク版1は、その表面に凸部がないため、遮光膜5間の透過部に異物7の残留が極めて生じにくいものとなる。また、前記マスクパターン6を構成する遮光膜5が前記凹部4内に没入するように配設された場合、つまり、前記遮光膜5が前記透明基板2の表面より高さが低く形成された場合には、当該フォトマスク版1の表面は凹状となる。そのため、前述のように、フォトマスク版1の表面が面一に形成された場合に比べ、前記凹凸の段差部に異物7が残留する可能性は高くなる。しかしながら、その場合には、図2に示すように、前記異物7はマスクパターン6上、つまり、フォトマスク版1の遮光部として機能する領域に残留することとなるため、フォトマスク版1の透過部に何ら影響を与えるものではなく、マスクパーターンの形状を変化させることがない。 The photomask plate 1 of the present embodiment formed in this way is formed so that the mask pattern 6 does not protrude from the surface of the transparent substrate 2, that is, substantially flush with the surface of the transparent substrate 2. The Rukoto. Then, as shown in FIG. 1g, the photomask plate 1 in which the mask pattern 6 is formed substantially flush with the surface of the transparent substrate 2 has no convex portions on the surface thereof. The residue of the foreign matter 7 is extremely difficult to occur. Further, when the light shielding film 5 constituting the mask pattern 6 is disposed so as to be immersed in the recess 4, that is, when the light shielding film 5 is formed lower than the surface of the transparent substrate 2. The surface of the photomask plate 1 is concave. Therefore, as described above, there is a higher possibility that the foreign matter 7 remains in the uneven step portion as compared with the case where the surface of the photomask plate 1 is formed flush. However, in that case, as shown in FIG. 2, the foreign matter 7 remains on the mask pattern 6, that is, in a region functioning as a light-shielding portion of the photomask plate 1. The shape of the mask pattern is not changed.
このように、本発明のフォトマスク版1によれば、マスクパターン6間における異物7の付着などによるマスクパターン6の形状変化がなく、所望のマスクパターン6の形状を確実に得ることができるので、当該フォトマスク版1を利用したパターニングの精度を向上させることができるものとなる。 As described above, according to the photomask plate 1 of the present invention, there is no change in the shape of the mask pattern 6 due to adhesion of the foreign matter 7 between the mask patterns 6, and the desired shape of the mask pattern 6 can be obtained reliably. Thus, the patterning accuracy using the photomask plate 1 can be improved.
また、透明基板2の表面に所望のマスクパターン6の形状をなす凹部4を形成し、前記凹部4が形成された前記透明基板2の表面に遮光膜5を積層形成し、その後、前記遮光膜5を前記凹部4内に収め、かつ、前記透明基板2の表面上へ突出しないように前記透明基板2の表面を研磨して、マスクパターン6を形成するという、本実施形態のフォトマスク版1の作成方法によれば、簡単な方法で確実に前記フォトマスク版1を作成することができ、フォトマスク版1の洗浄について検査や再洗浄を繰り返す必要がなくなるため、生産性を向上させることができ、洗浄水や人件費などのコストの削減も可能とする。 Further, a concave portion 4 having the shape of a desired mask pattern 6 is formed on the surface of the transparent substrate 2, and a light shielding film 5 is formed on the surface of the transparent substrate 2 on which the concave portion 4 is formed. The mask pattern 6 is formed by polishing the surface of the transparent substrate 2 so that the mask 5 is accommodated in the recess 4 and does not protrude onto the surface of the transparent substrate 2. According to the production method, the photomask plate 1 can be reliably produced by a simple method, and it is not necessary to repeat inspection and re-washing for cleaning the photomask plate 1, thereby improving productivity. It is possible to reduce costs such as washing water and labor costs.
なお、本発明は、前述した実施の形態に限定されるものではなく、必要に応じて種々の変更が可能である。例えば、本発明は、上記例示のポジ型フォトマスクの他に、ネガ型フォトマスクにも適用できる。 In addition, this invention is not limited to embodiment mentioned above, A various change is possible as needed. For example, the present invention can be applied to a negative photomask in addition to the positive photomask illustrated above.
1 フォトマスク版
2 透明基板
3 レジスト
4 凹部
5 遮光膜
6 マスクパターン
7 異物
DESCRIPTION OF SYMBOLS 1 Photomask plate 2 Transparent substrate 3 Resist 4 Concave part 5 Light shielding film 6 Mask pattern 7 Foreign material
Claims (2)
Forming a recess having a desired mask pattern on the surface of the transparent substrate, laminating a light-shielding film on the surface of the transparent substrate on which the recess is formed, and then the light-shielding film fits in the recess; and A method for producing a photomask plate, comprising: polishing a surface of the transparent substrate so as not to protrude onto the surface of the transparent substrate to form a mask pattern.
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KR101493306B1 (en) * | 2013-12-03 | 2015-02-17 | 위아코퍼레이션 주식회사 | Manufacturing method for laser reflective mask |
KR101544696B1 (en) | 2014-05-08 | 2015-08-17 | 위아코퍼레이션 주식회사 | Manufacturing method for laser reflective mask |
CN109445243A (en) * | 2018-12-21 | 2019-03-08 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version and preparation method thereof |
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JPH04324445A (en) * | 1991-04-25 | 1992-11-13 | Nec Corp | Mask for exposing and production thereof |
JPH10186628A (en) * | 1996-12-20 | 1998-07-14 | Sharp Corp | Production of photomask |
JPH1126355A (en) * | 1997-07-07 | 1999-01-29 | Toshiba Corp | Exposure mask and manufacture of the same |
JP2000195046A (en) * | 1999-01-01 | 2000-07-14 | Fuji Photo Film Co Ltd | Master carrier for magnetic transfer |
JP2000227651A (en) * | 1999-02-05 | 2000-08-15 | Nec Corp | Phase shift mask and its production |
JP2000232055A (en) * | 1999-02-10 | 2000-08-22 | Toshiba Corp | Charged particle beam exposure mask, its manufacture, and aligner and method using the same |
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JP2014068019A (en) * | 2008-09-24 | 2014-04-17 | Wi-A Corp | Method of manufacturing laser reflective mask |
JP2012517620A (en) * | 2009-09-02 | 2012-08-02 | ダブリュアイ−エー・コーポレーション | Laser reflective mask and method for manufacturing the same |
KR101493306B1 (en) * | 2013-12-03 | 2015-02-17 | 위아코퍼레이션 주식회사 | Manufacturing method for laser reflective mask |
KR101544696B1 (en) | 2014-05-08 | 2015-08-17 | 위아코퍼레이션 주식회사 | Manufacturing method for laser reflective mask |
CN109445243A (en) * | 2018-12-21 | 2019-03-08 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version and preparation method thereof |
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