JP2016018187A - Method for producing exposure mask - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 abstract description 31
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000007796 conventional method Methods 0.000 abstract description 4
- 238000005520 cutting process Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical class C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
本発明は、ウェーハを加工する際に使用される露光マスクの製造方法に関する。 The present invention relates to a method of manufacturing an exposure mask used when processing a wafer.
携帯電話に代表される小型軽量な電子機器では、ＩＣ、ＬＳＩ等の電子回路を備えるデバイスチップが必須の構成となっている。デバイスチップは、例えば、シリコン等の材料でなるウェーハの表面をストリートと呼ばれる複数の分割予定ラインで区画し、各領域に電子回路を形成した後、このストリートに沿ってウェーハを切断することで製造できる。 In a small and light electronic device typified by a mobile phone, a device chip including an electronic circuit such as an IC or LSI is an essential configuration. Device chips are manufactured by, for example, dividing the surface of a wafer made of a material such as silicon into a plurality of division lines called streets, forming an electronic circuit in each area, and then cutting the wafer along the streets. it can.
ウェーハを切断する際には、例えば、高速回転する切削ブレードをウェーハのストリートに切り込ませた上で、切削ブレード及びウェーハをストリートと平行な方向に相対移動させる。しかしながら、この方法では、ウェーハをストリートに沿って機械的に削り取るので、デバイスチップの抗折強度が低下しがちである。 When cutting the wafer, for example, a cutting blade rotating at high speed is cut into the street of the wafer, and then the cutting blade and the wafer are relatively moved in a direction parallel to the street. However, in this method, since the wafer is mechanically scraped along the street, the bending strength of the device chip tends to be lowered.
また、この方法では、切削ブレードをストリートに対して高精度に位置合わせした上で、各ストリートを個別に切削する必要があるので、加工の終了までに長い時間を要してしまう。特に、この問題は、切削すべき分割予定ラインの数が多いウェーハにおいて深刻である。 Further, in this method, it is necessary to position the cutting blade with respect to the streets with high accuracy and to cut each street individually, so that it takes a long time to finish the machining. This problem is particularly serious in a wafer having a large number of division lines to be cut.
そこで、近年では、プラズマエッチングを利用してウェーハを切断する方法が提案されている（例えば、特許文献１参照）。この方法では、プラズマエッチングでウェーハの全面を一度に加工できるので、デバイスチップの小型化、ウェーハの大型化等によって加工すべき分割予定ラインの数が増えても、加工時間は殆ど変わらずに済む。 Therefore, in recent years, a method of cutting a wafer using plasma etching has been proposed (for example, see Patent Document 1). In this method, since the entire surface of the wafer can be processed at once by plasma etching, the processing time hardly changes even if the number of division lines to be processed increases due to downsizing of the device chip, upsizing of the wafer, or the like. .
また、ウェーハを機械的に削り取るわけではないないので、加工時の欠け等を抑制し、デバイスチップの抗折強度を高く維持できる。なお、この方法では、ガラス基板の表面にクロム等でなる遮光膜のパターンが形成された露光マスク（例えば、特許文献２参照）を用いて、ウェーハの表裏面にエッチング用のレジスト膜を形成している。 Further, since the wafer is not mechanically scraped off, chipping during processing can be suppressed and the bending strength of the device chip can be maintained high. In this method, an etching resist film is formed on the front and back surfaces of the wafer using an exposure mask (for example, see Patent Document 2) in which a light-shielding film pattern made of chromium or the like is formed on the surface of the glass substrate. ing.
しかしながら、上述した露光マスクは、遮光膜の形成、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経て製造され、価格が高いので、この露光マスクを用いると、ウェーハの加工コストも高くなってしまう。 However, the above-described exposure mask is manufactured through complicated processes such as formation of a light shielding film, coating of a resist film, pattern drawing of a resist film, etching of the light shielding film, and the cost is high. The processing cost will be high.
本発明はかかる問題点に鑑みてなされたものであり、その目的とするところは、従来の方法と比べて簡単な工程で安価に露光マスクを製造可能な露光マスクの製造方法を提供することである。 The present invention has been made in view of such problems, and an object of the present invention is to provide an exposure mask manufacturing method capable of manufacturing an exposure mask at a low cost by a simple process compared to a conventional method. is there.
本発明によれば、ウェーハ加工用の露光マスクの製造方法であって、加工するウェーハ以上の大きさを有し光を透過する板状部材の表面に光を遮る遮光膜を被覆した遮光板を準備する準備工程と、該ウェーハのストリートに対応する該遮光板の表面側の領域に、該遮光膜が除去され且つ該遮光板の裏面には至らない深さの溝を形成する溝形成工程と、該溝に透明な樹脂を埋設して該溝形成工程で該溝の底部に形成された凹凸を埋める樹脂埋設工程と、を備えたことを特徴とする露光マスクの製造方法が提供される。 According to the present invention, there is provided a method of manufacturing an exposure mask for wafer processing, comprising: a light shielding plate having a size larger than a wafer to be processed and having a light shielding film covering the surface of a plate member that transmits light; A preparation step for preparing, and a groove forming step for forming a groove having a depth in which the light shielding film is removed and does not reach the back surface of the light shielding plate in a region on the front surface side of the light shielding plate corresponding to the street of the wafer; And a resin embedding step of embedding a transparent resin in the groove to fill the irregularities formed at the bottom of the groove in the groove forming step.
本発明において、該樹脂埋設工程は、インクジェットノズルを有する埋設手段によって行われることが好ましい。 In this invention, it is preferable that this resin embedding process is performed by the embedding means which has an inkjet nozzle.
また、本発明において、該樹脂埋設工程では、該溝が形成された該遮光板の表面全体に該樹脂を被覆して該溝に該樹脂を埋設することが好ましい。 In the present invention, in the resin embedding step, it is preferable to cover the entire surface of the light shielding plate on which the groove is formed with the resin and bury the resin in the groove.
本発明に係る露光マスクの製造方法は、光を透過する板状部材の表面に光を遮る遮光膜を被覆した遮光板を準備する準備工程と、ウェーハのストリートに対応する遮光板の表面側に、遮光膜が除去され且つ遮光板の裏面に至らない深さの溝を形成する溝形成工程と、遮光板の溝に透明な樹脂を埋設する樹脂埋設工程と、を含んでいる。 The method for producing an exposure mask according to the present invention includes a preparation step of preparing a light-shielding plate in which a surface of a plate-like member that transmits light is coated with a light-shielding film that shields light, and a surface side of the light-shielding plate corresponding to the street of the wafer. And a groove forming step of forming a groove having a depth that does not reach the back surface of the light shielding plate, and a resin embedding step of embedding a transparent resin in the groove of the light shielding plate.
そのため、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経ることなく、ウェーハのストリートに対応する透過パターンを備えた露光マスクを製造できる。このように、本発明によれば、従来の方法と比べて簡単な工程で安価に露光マスクを製造可能な露光マスクの製造方法を提供できる。 Therefore, an exposure mask having a transmission pattern corresponding to the street of the wafer can be manufactured without going through complicated steps such as resist film coating, resist film pattern drawing, and light shielding film etching. Thus, according to the present invention, it is possible to provide an exposure mask manufacturing method capable of manufacturing an exposure mask at a low cost by a simple process as compared with the conventional method.
添付図面を参照して、本発明の実施形態について説明する。本実施形態に係る露光マスクの製造方法は、準備工程、溝形成工程（図２（Ａ）及び図２（Ｂ）参照）、及び樹脂埋設工程（図３（Ａ）及び図３（Ｂ）参照）を含む。 Embodiments of the present invention will be described with reference to the accompanying drawings. The exposure mask manufacturing method according to this embodiment includes a preparation process, a groove forming process (see FIGS. 2A and 2B), and a resin embedding process (see FIGS. 3A and 3B). )including.
準備工程では、光を透過する板状部材の表面に光を遮る遮光膜を被覆した遮光板を準備する。溝形成工程では、ウェーハのストリートに対応する遮光板の表面側に、遮光膜が除去され且つ遮光板の裏面に至らない深さの溝を形成する。樹脂埋設工程では、遮光板の溝に透明な樹脂を埋設する。以下、本実施形態に係る露光マスクの製造方法について詳述する。 In the preparation step, a light shielding plate is prepared in which the surface of a plate member that transmits light is covered with a light shielding film that blocks light. In the groove forming step, a groove having a depth from which the light shielding film is removed and does not reach the back surface of the light shielding plate is formed on the front surface side of the light shielding plate corresponding to the street of the wafer. In the resin embedding process, a transparent resin is embedded in the groove of the light shielding plate. Hereinafter, the manufacturing method of the exposure mask which concerns on this embodiment is explained in full detail.
まず、本実施形態の露光マスクを用いて加工されるウェーハについて説明する。図１（Ａ）は、ウェーハの構成例を模式的に示す斜視図であり、図１（Ｂ）は、ウェーハの構成例を模式的に示す断面図である。 First, a wafer processed using the exposure mask of this embodiment will be described. FIG. 1A is a perspective view schematically illustrating a configuration example of a wafer, and FIG. 1B is a cross-sectional view schematically illustrating a configuration example of a wafer.
図１（Ａ）及び図１（Ｂ）に示すように、ウェーハ１１は、例えば、シリコン等の半導体材料で形成された略円形の板状物であり、表面１１ａは、中央のデバイス領域１３と、デバイス領域１３を囲む外周余剰領域１５とに分けられている。 As shown in FIGS. 1A and 1B, the wafer 11 is a substantially circular plate-like object formed of a semiconductor material such as silicon, for example, and the surface 11a has a central device region 13 and The outer peripheral surplus area 15 surrounding the device area 13 is divided.
デバイス領域１３は、格子状に配列されたストリート（分割予定ライン）１７でさらに複数の領域に区画されており、各領域には、ＩＣ等のデバイス１９が形成されている。ウェーハ１１の外周１１ｃは面取り加工されており、丸みを帯びている。 The device region 13 is further divided into a plurality of regions by streets (division planned lines) 17 arranged in a lattice pattern, and a device 19 such as an IC is formed in each region. The outer periphery 11c of the wafer 11 is chamfered and rounded.
本実施形態に係る露光マスクの製造方法では、上述したウェーハ１１のストリート１７に対応する透過パターンを備えた露光マスクを製造する。具体的には、まず、露光マスクに加工される遮光板を準備する準備工程を実施する。図２（Ａ）は、本実施形態の遮光板、及び準備工程後に実施される溝形成工程を模式的に示す斜視図である。 In the exposure mask manufacturing method according to the present embodiment, an exposure mask having a transmission pattern corresponding to the streets 17 of the wafer 11 described above is manufactured. Specifically, first, a preparation process for preparing a light shielding plate to be processed into an exposure mask is performed. FIG. 2A is a perspective view schematically showing the light shielding plate of the present embodiment and the groove forming step performed after the preparation step.
準備工程では、図２（Ａ）に示すように、板状部材２１の表面２１ａ側を遮光膜２３で被覆した遮光板２５を準備する。板状部材２１は、ガラス、樹脂等の透明材料で略円盤状に形成されており、その直径は、例えば、ウェーハ１１の直径より大きくなっている。ただし、板状部材２１は、ウェーハ１１と同径に形成されても良い。すなわち、板状部材２１は、ウェーハ１１以上の大きさであれば良い。 In the preparation step, as shown in FIG. 2A, a light shielding plate 25 in which the surface 21a side of the plate-like member 21 is covered with a light shielding film 23 is prepared. The plate-like member 21 is formed in a substantially disk shape with a transparent material such as glass or resin, and the diameter thereof is larger than the diameter of the wafer 11, for example. However, the plate-like member 21 may be formed with the same diameter as the wafer 11. That is, the plate-like member 21 may be larger than the wafer 11.
また、この板状部材２１は、露光マスクに要求される任意の光学特性を備えている。具体的には、例えば、板状部材２１は、レジスト材を硬化させるために用いる所定波長の光に対して透明である。ただし、板状部材２１は、必ずしも可視光に対して透明である必要はない。 Further, the plate-like member 21 has arbitrary optical characteristics required for the exposure mask. Specifically, for example, the plate-like member 21 is transparent to light of a predetermined wavelength used for curing the resist material. However, the plate-like member 21 is not necessarily transparent to visible light.
遮光膜２３は、例えば、スパッタリング法やＣＶＤ法等により形成される金属膜であり、レジスト材を硬化させるために用いる所定波長の光を遮蔽する。ただし、遮光膜２３の材質、厚み、形成方法等は、露光マスクに要求される条件に応じて任意に設定できる。 The light shielding film 23 is a metal film formed by, for example, a sputtering method or a CVD method, and shields light having a predetermined wavelength used for curing the resist material. However, the material, thickness, formation method, etc. of the light shielding film 23 can be arbitrarily set according to the conditions required for the exposure mask.
準備工程の後には、ウェーハのストリートに対応する溝を遮光板２５の表面側（遮光膜２３側）に形成する溝形成工程を実施する。図２（Ｂ）は、溝形成工程後の遮光板２５を模式的に示す断面図である。 After the preparation process, a groove forming process is performed in which a groove corresponding to the street of the wafer is formed on the surface side of the light shielding plate 25 (the light shielding film 23 side). FIG. 2B is a cross-sectional view schematically showing the light shielding plate 25 after the groove forming step.
この溝形成工程では、図２（Ａ）に示すように、高速回転させた切削ブレード２を遮光板２５の表面に切り込ませ、切削ブレード２と遮光板２５とを水平方向に相対移動させる。ここで、切削ブレード２は、ウェーハ１１のストリート１７に対応する領域に切り込まれる。また、切削ブレード２の切り込み深さは、遮光膜２３が除去され、且つ切削ブレード２が遮光板２５の裏面（板状部材２１の裏面２１ｂ）に達しない程度とする。 In this groove forming step, as shown in FIG. 2A, the cutting blade 2 rotated at a high speed is cut into the surface of the light shielding plate 25, and the cutting blade 2 and the light shielding plate 25 are relatively moved in the horizontal direction. Here, the cutting blade 2 is cut into an area corresponding to the street 17 of the wafer 11. The cutting depth of the cutting blade 2 is set such that the light shielding film 23 is removed and the cutting blade 2 does not reach the back surface of the light shielding plate 25 (the back surface 21b of the plate-like member 21).
これにより、遮光板２５の表面側に、ウェーハ１１のストリート１７に対応し遮光板２５の裏面に至らない深さの溝２７を形成できる。ウェーハ１１の全てのストリート１７に対応する溝２７が形成されると、溝形成工程は終了する。 Thereby, a groove 27 having a depth corresponding to the street 17 of the wafer 11 and not reaching the back surface of the light shielding plate 25 can be formed on the front surface side of the light shielding plate 25. When the grooves 27 corresponding to all the streets 17 of the wafer 11 are formed, the groove forming process ends.
溝形成工程で形成された溝２７の底部２７ａには、切削ブレード２との摩擦によって僅かな凹凸が発生している。そこで、溝形成工程の後には、遮光板２５の溝２７に透明な樹脂を埋設する樹脂埋設工程を実施する。図３（Ａ）は、樹脂埋設工程を模式的に示す一部断面側面図であり、図３（Ｂ）は、樹脂埋設工程後の遮光板２５を模式的に示す斜視図である。 On the bottom 27a of the groove 27 formed in the groove forming step, slight irregularities are generated due to friction with the cutting blade 2. Therefore, after the groove forming step, a resin embedding step of embedding a transparent resin in the groove 27 of the light shielding plate 25 is performed. FIG. 3A is a partial cross-sectional side view schematically showing the resin embedding process, and FIG. 3B is a perspective view schematically showing the light shielding plate 25 after the resin embedding process.
樹脂埋設工程では、例えば、図３（Ａ）に示すように、遮光板２５の表面側に配置されたインクジェットノズル（埋設手段）４を溝２７に沿って移動させながら、フッ素樹脂、アダマンタン誘導体、ＳＢＣ樹脂等に代表される透明材料を含む液体２９を溝２７に滴下する。 In the resin embedding process, for example, as shown in FIG. 3A, while moving the inkjet nozzle (embedding means) 4 disposed on the surface side of the light shielding plate 25 along the groove 27, the fluororesin, the adamantane derivative, A liquid 29 containing a transparent material typified by SBC resin or the like is dropped into the groove 27.
その後、溝２７に供給された液体２９を乾燥・硬化させることで、図３（Ａ）及び図３（Ｂ）に示すように、ウェーハ１１のストリート１７に対応する直線状の樹脂３１を溝２７内に形成できる。このように、底部２７ａの凹凸を樹脂３１で埋めることにより、底部２７ａの凹凸に起因する光学特性の低下を防ぐことができる。遮光板２５の全ての溝２７に樹脂３１が埋設されると、露光マスクは完成する。 Thereafter, the liquid 29 supplied to the groove 27 is dried and cured, so that the linear resin 31 corresponding to the streets 17 of the wafer 11 is formed in the groove 27 as shown in FIGS. 3A and 3B. Can be formed inside. In this way, by filling the unevenness of the bottom 27a with the resin 31, it is possible to prevent the optical characteristics from being deteriorated due to the unevenness of the bottom 27a. When the resin 31 is embedded in all the grooves 27 of the light shielding plate 25, the exposure mask is completed.
以上のように、本実施形態に係る露光マスクの製造方法は、光を透過する板状部材２１の表面２１ａに光を遮る遮光膜２３を被覆した遮光板２５を準備する準備工程と、ウェーハ１１のストリート１７に対応する遮光板２５の表面側に、遮光膜２３が除去され且つ遮光板２５の裏面に至らない深さの溝２７を形成する溝形成工程と、遮光板２５の溝２７に透明な樹脂３１を埋設する樹脂埋設工程と、を含んでいる。 As described above, the manufacturing method of the exposure mask according to the present embodiment prepares the light shielding plate 25 in which the light shielding film 23 that shields light is applied to the surface 21 a of the plate-like member 21 that transmits light, and the wafer 11. A groove forming step of forming a groove 27 having a depth that does not reach the back surface of the light shielding plate 25 on the front surface side of the light shielding plate 25 corresponding to the street 17, and transparent to the grooves 27 of the light shielding plate 25. And a resin embedding process for embedding a resin 31.
そのため、レジスト膜の被覆、レジスト膜のパターン描画、遮光膜のエッチングといった複雑な工程を経ることなく、ウェーハ１１のストリート１７に対応する透過パターンを備えた露光マスクを製造できる。このように、本実施形態によれば、従来の方法と比べて簡単な工程で安価に露光マスクを製造可能な露光マスクの製造方法を提供できる。 Therefore, an exposure mask having a transmission pattern corresponding to the streets 17 of the wafer 11 can be manufactured without going through complicated steps such as resist film coating, resist film pattern drawing, and light shielding film etching. As described above, according to the present embodiment, it is possible to provide an exposure mask manufacturing method capable of manufacturing an exposure mask at a low cost by a simple process compared to the conventional method.
なお、本発明は上記実施形態の記載に限定されず、種々変更して実施可能である。例えば、上記実施形態では、インクジェットノズル４で液体２９を滴下するいわゆるインクジェット法を用いて溝２７に樹脂３１を埋設しているが、溝２７に樹脂３１を埋設する方法はこれに限定されない。 In addition, this invention is not limited to description of the said embodiment, A various change can be implemented. For example, in the above embodiment, the resin 31 is embedded in the groove 27 by using a so-called inkjet method in which the liquid 29 is dropped by the inkjet nozzle 4, but the method of embedding the resin 31 in the groove 27 is not limited to this.
図４は、樹脂埋設工程の変形例を模式的に示す断面図である。変形例に係る樹脂埋設工程では、図４に示すように、遮光板２５の表面（遮光膜２３）全体を被覆する樹脂膜（樹脂）３３を形成する。樹脂膜３３は、例えば、上述した透明材料を用いてスピンコート等の方法で形成され、図４に示すように、その一部が溝２７に埋設されている。 FIG. 4 is a cross-sectional view schematically showing a modified example of the resin embedding process. In the resin embedding process according to the modification, as shown in FIG. 4, a resin film (resin) 33 that covers the entire surface of the light shielding plate 25 (light shielding film 23) is formed. For example, the resin film 33 is formed by a method such as spin coating using the transparent material described above, and a part of the resin film 33 is embedded in the groove 27 as shown in FIG.
これにより、底部２７ａの凹凸に起因する光学特性の低下を防ぐことができる。このように、変形例に係る遮光材埋設工程を実施する場合にも、上記実施形態と同様の露光マスクを製造できる。 Thereby, it is possible to prevent a decrease in optical characteristics due to the unevenness of the bottom 27a. Thus, also when implementing the light-shielding material embedding process according to the modification, an exposure mask similar to that in the above embodiment can be manufactured.
その他、上記実施形態に係る構成、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 In addition, the configurations, methods, and the like according to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the present invention.
１１ ウェーハ
１１ａ 表面
１１ｂ 裏面
１１ｃ 外周
１３ デバイス領域
１５ 外周余剰領域
１７ ストリート（分割予定ライン）
１９ デバイス
２１ 板状部材
２１ａ 表面
２１ｂ 裏面
２３ 遮光膜
２５ 遮光板
２７ 溝
２７ａ 底部
２９ 液体
３１ 樹脂
３３ 樹脂膜（樹脂）
２ 切削ブレード
４ インクジェットノズル（埋設手段）
DESCRIPTION OF SYMBOLS 11 Wafer 11a Front surface 11b Back surface 11c Outer periphery 13 Device area | region 15 Outer periphery excess area | region 17 Street (division plan line)
19 device 21 plate-like member 21a front surface 21b back surface 23 light shielding film 25 light shielding plate 27 groove 27a bottom 29 liquid 31 resin 33 resin film (resin)
2 Cutting blade 4 Inkjet nozzle (embedding means)
Claims (3)
加工するウェーハ以上の大きさを有し光を透過する板状部材の表面に光を遮る遮光膜を被覆した遮光板を準備する準備工程と、
該ウェーハのストリートに対応する該遮光板の表面側の領域に、該遮光膜が除去され且つ該遮光板の裏面には至らない深さの溝を形成する溝形成工程と、
該溝に透明な樹脂を埋設して該溝形成工程で該溝の底部に形成された凹凸を埋める樹脂埋設工程と、を備えたことを特徴とする露光マスクの製造方法。 A method of manufacturing an exposure mask for wafer processing,
A preparation step of preparing a light shielding plate having a size larger than a wafer to be processed and covering the surface of a plate-like member that transmits light, and covering the light shielding film,
A groove forming step of forming a groove having a depth that does not reach the back surface of the light shielding plate in the region on the front surface side of the light shielding plate corresponding to the street of the wafer;
And a resin embedding step of embedding a transparent resin in the groove to fill the irregularities formed at the bottom of the groove in the groove forming step.
2. The method of manufacturing an exposure mask according to claim 1, wherein in the resin embedding step, the resin is coated on the entire surface of the light shielding plate in which the groove is formed, and the resin is embedded in the groove.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014143067A JP2016018187A (en) | 2014-07-11 | 2014-07-11 | Method for producing exposure mask |
| TW104116996A TW201602713A (en) | 2014-07-11 | 2015-05-27 | Manufacturing method of exposure mask |
| CN201510390436.0A CN105242491A (en) | 2014-07-11 | 2015-07-06 | Method for manufacturing exposure mask |
| KR1020150097011A KR20160007395A (en) | 2014-07-11 | 2015-07-08 | Method for manufacturing exposure mask |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2014143067A JP2016018187A (en) | 2014-07-11 | 2014-07-11 | Method for producing exposure mask |
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| Publication Number | Publication Date |
|---|---|
| JP2016018187A true JP2016018187A (en) | 2016-02-01 |
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| JP2014143067A Pending JP2016018187A (en) | 2014-07-11 | 2014-07-11 | Method for producing exposure mask |
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| JP (1) | JP2016018187A (en) |
| KR (1) | KR20160007395A (en) |
| CN (1) | CN105242491A (en) |
| TW (1) | TW201602713A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018036567A (en) * | 2016-09-01 | 2018-03-08 | 株式会社ディスコ | Production method of photomask for wafer processing |
Families Citing this family (1)
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| CN108169998B (en) * | 2018-01-03 | 2021-01-08 | 京东方科技集团股份有限公司 | Mask plate, use method thereof and exposure equipment |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117072A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Hard mask |
| JPS52117555A (en) * | 1976-03-30 | 1977-10-03 | Toshiba Corp | Formation of photo mask |
| JPS548978A (en) * | 1977-06-23 | 1979-01-23 | Mitsubishi Electric Corp | Manufacture of photto mask |
| JPS55163539A (en) * | 1979-06-06 | 1980-12-19 | Nec Kyushu Ltd | Photo mask |
| JPS5626749U (en) * | 1979-08-07 | 1981-03-12 | ||
| JPS56130748A (en) * | 1980-03-17 | 1981-10-13 | Matsushita Electric Ind Co Ltd | Formation of inert protective film |
| JPS6310162A (en) * | 1986-06-30 | 1988-01-16 | Hoya Corp | Photomask |
| JPS6488550A (en) * | 1987-09-30 | 1989-04-03 | Sharp Kk | Photomask |
| US5403683A (en) * | 1987-09-30 | 1995-04-04 | Sharp Kabushiki Kaisha | Photo-mask |
| JPH08321478A (en) * | 1995-05-26 | 1996-12-03 | Nissan Motor Co Ltd | Manufacture of semiconductor device |
| JP2001215687A (en) * | 2000-02-03 | 2001-08-10 | Nec Corp | Photomask and its manufacturing method |
| US20030235764A1 (en) * | 2002-06-25 | 2003-12-25 | International Business Machines Corporation | Planar reticle design/fabrication method for rapid inspection and cleaning |
| JP2004228152A (en) * | 2003-01-20 | 2004-08-12 | Shinko Electric Ind Co Ltd | Wafer dicing method |
| JP2006245102A (en) * | 2005-03-01 | 2006-09-14 | Disco Abrasive Syst Ltd | Exposure method |
| JP2006312206A (en) * | 2005-05-06 | 2006-11-16 | Tokyo Seimitsu Co Ltd | Grinding method |
| JP2006346843A (en) * | 2005-06-13 | 2006-12-28 | Kazumasa Onishi | Disc-like blade and cutting device |
| JP2009075531A (en) * | 2006-12-05 | 2009-04-09 | Victor Co Of Japan Ltd | Exposure mask for aligner, and method of manufacturing the same |
| JP2012199437A (en) * | 2011-03-22 | 2012-10-18 | Toshiba Corp | Method of manufacturing semiconductor element and photomask |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62229151A (en) | 1985-11-05 | 1987-10-07 | Mitsubishi Electric Corp | Preparation of pattern mask |
| CA1313792C (en) * | 1986-02-28 | 1993-02-23 | Junji Hirokane | Method of manufacturing photo-mask and photo-mask manufactured thereby |
| JP2006114825A (en) | 2004-10-18 | 2006-04-27 | Disco Abrasive Syst Ltd | Dividing method of wafer |
| CN101131915A (en) * | 2006-08-23 | 2008-02-27 | 财团法人工业技术研究院 | Packaging structure with protection layer and packaging structure thereof |
-
2014
- 2014-07-11 JP JP2014143067A patent/JP2016018187A/en active Pending
-
2015
- 2015-05-27 TW TW104116996A patent/TW201602713A/en unknown
- 2015-07-06 CN CN201510390436.0A patent/CN105242491A/en active Pending
- 2015-07-08 KR KR1020150097011A patent/KR20160007395A/en unknown
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117072A (en) * | 1976-03-29 | 1977-10-01 | Hitachi Ltd | Hard mask |
| JPS52117555A (en) * | 1976-03-30 | 1977-10-03 | Toshiba Corp | Formation of photo mask |
| JPS548978A (en) * | 1977-06-23 | 1979-01-23 | Mitsubishi Electric Corp | Manufacture of photto mask |
| JPS55163539A (en) * | 1979-06-06 | 1980-12-19 | Nec Kyushu Ltd | Photo mask |
| JPS5626749U (en) * | 1979-08-07 | 1981-03-12 | ||
| JPS56130748A (en) * | 1980-03-17 | 1981-10-13 | Matsushita Electric Ind Co Ltd | Formation of inert protective film |
| JPS6310162A (en) * | 1986-06-30 | 1988-01-16 | Hoya Corp | Photomask |
| JPS6488550A (en) * | 1987-09-30 | 1989-04-03 | Sharp Kk | Photomask |
| US5403683A (en) * | 1987-09-30 | 1995-04-04 | Sharp Kabushiki Kaisha | Photo-mask |
| JPH08321478A (en) * | 1995-05-26 | 1996-12-03 | Nissan Motor Co Ltd | Manufacture of semiconductor device |
| JP2001215687A (en) * | 2000-02-03 | 2001-08-10 | Nec Corp | Photomask and its manufacturing method |
| US20030235764A1 (en) * | 2002-06-25 | 2003-12-25 | International Business Machines Corporation | Planar reticle design/fabrication method for rapid inspection and cleaning |
| JP2004228152A (en) * | 2003-01-20 | 2004-08-12 | Shinko Electric Ind Co Ltd | Wafer dicing method |
| JP2006245102A (en) * | 2005-03-01 | 2006-09-14 | Disco Abrasive Syst Ltd | Exposure method |
| JP2006312206A (en) * | 2005-05-06 | 2006-11-16 | Tokyo Seimitsu Co Ltd | Grinding method |
| JP2006346843A (en) * | 2005-06-13 | 2006-12-28 | Kazumasa Onishi | Disc-like blade and cutting device |
| JP2009075531A (en) * | 2006-12-05 | 2009-04-09 | Victor Co Of Japan Ltd | Exposure mask for aligner, and method of manufacturing the same |
| JP2012199437A (en) * | 2011-03-22 | 2012-10-18 | Toshiba Corp | Method of manufacturing semiconductor element and photomask |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018036567A (en) * | 2016-09-01 | 2018-03-08 | 株式会社ディスコ | Production method of photomask for wafer processing |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201602713A (en) | 2016-01-16 |
| KR20160007395A (en) | 2016-01-20 |
| CN105242491A (en) | 2016-01-13 |
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