JPS5552060A - Photo mask - Google Patents

Photo mask

Info

Publication number
JPS5552060A
JPS5552060A JP12556678A JP12556678A JPS5552060A JP S5552060 A JPS5552060 A JP S5552060A JP 12556678 A JP12556678 A JP 12556678A JP 12556678 A JP12556678 A JP 12556678A JP S5552060 A JPS5552060 A JP S5552060A
Authority
JP
Japan
Prior art keywords
mask
film
integrated circuits
photo
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12556678A
Other languages
Japanese (ja)
Inventor
Masao Kyono
Susumu Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12556678A priority Critical patent/JPS5552060A/en
Publication of JPS5552060A publication Critical patent/JPS5552060A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To form circuit patterns of even accuracy and improve the yield of integrated circuits by providing films of a constant thickness to the shield type pattern parts of the peripheral part and inside of a mask at the time of making the photo mask used for production of thin film integrated circuits.
CONSTITUTION: After silver salt emulsion or the like 2 is deposited on a substrate 1 such as of Myler film or other, desired circuit patterns are formed thereon. Next, a smooth metal film or organic film 7 having a constant thickness is formed on the peripheral part and inside of the non-transmission portions of said patterns by such a method as adhesive agents or vapor deposition. On a ceramic substrate 3 for hybrid integrated circuits a metal thin film 4 is deported and further photo resist 5 is formed, and after these are fixed to a substrate holder 6, the photo mask thus made is superposed and pressured from the arrow direction. In this way, the transparent pattern parts of the mask do not adhere to the photo resist 5 and only the film 7 on the non-transparent portions adheres. Hence, surface peeling, staining, etc. of the resist 5 are prevented, the staining of mask surface is obviated and multiple sheets of the inte grated circuits of good accuracy may be produced from the same mask.
COPYRIGHT: (C)1980,JPO&Japio
JP12556678A 1978-10-11 1978-10-11 Photo mask Pending JPS5552060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12556678A JPS5552060A (en) 1978-10-11 1978-10-11 Photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12556678A JPS5552060A (en) 1978-10-11 1978-10-11 Photo mask

Publications (1)

Publication Number Publication Date
JPS5552060A true JPS5552060A (en) 1980-04-16

Family

ID=14913356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12556678A Pending JPS5552060A (en) 1978-10-11 1978-10-11 Photo mask

Country Status (1)

Country Link
JP (1) JPS5552060A (en)

Similar Documents

Publication Publication Date Title
JPS5669835A (en) Method for forming thin film pattern
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS5552060A (en) Photo mask
JPS5484932A (en) Forming method of multi-layer construction
JPS5494881A (en) Exposure method
JPS5441681A (en) Manufacture for high frequency transistor
JPS5461478A (en) Chromium plate
JPS5315755A (en) Manufacture of display panel electrode
JPS5387668A (en) Forming method of patterns
JPS53107274A (en) Forming method of patterns
JPS5498179A (en) Preparation of minute circuits and elements
JPS55163539A (en) Photo mask
JPS5317583A (en) Process for forming vacuum evaporation layer on largeesized substrate surface
JPS5691434A (en) Method for forming pattern of deposited film by lift-off method
JPS54107277A (en) Production of semiconductor device
JPS5317075A (en) Production of silicon mask for x-ray exposure
JPS5493970A (en) Patttern forming method of multi-layer metallic thin film
JPS5360177A (en) Photo mask
JPS533168A (en) Semiconductor evaporating apparatus
JPS5527637A (en) Photo-resist-pattern forming method
JPS5636120A (en) Manufacture of magnetic bubble device
JPS5799371A (en) Formation of resin film
JPS5586118A (en) Alignment mark formation
JPS52144969A (en) Photo mask
JPS54101661A (en) Ingot for single crystal substrate