JPS55138834A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS55138834A
JPS55138834A JP4531979A JP4531979A JPS55138834A JP S55138834 A JPS55138834 A JP S55138834A JP 4531979 A JP4531979 A JP 4531979A JP 4531979 A JP4531979 A JP 4531979A JP S55138834 A JPS55138834 A JP S55138834A
Authority
JP
Japan
Prior art keywords
bromine
iodine
gas
fluoride
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4531979A
Other languages
Japanese (ja)
Other versions
JPS5713137B2 (en
Inventor
Seitaro Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4531979A priority Critical patent/JPS55138834A/en
Publication of JPS55138834A publication Critical patent/JPS55138834A/en
Publication of JPS5713137B2 publication Critical patent/JPS5713137B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To enable fluoride to selectively etch a volatile substance layer without any undercut by employing a gas having a molecular structure of the type that a part of the fluorine of carbon fluoride is substituted for bromine or iodine for an etching gas. CONSTITUTION:A volatile substance layer 2 coated on an SiO2 base 3 is selectively etched with an SiO2 as a mask 1 by fluoride. In a dry etching method therefor, a mixture gas of gas having a molecular structure of the type that a part of the fluorine of carbon fluoride is substituted for bromine or iodine or that carbon fluoride and a part of the bromine, iodine of fluorine of the carbon fluoride is substituted for bromine or iodine for an etching gas.
JP4531979A 1979-04-16 1979-04-16 Dry etching method Granted JPS55138834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4531979A JPS55138834A (en) 1979-04-16 1979-04-16 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4531979A JPS55138834A (en) 1979-04-16 1979-04-16 Dry etching method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP20598182A Division JPS58100684A (en) 1982-11-26 1982-11-26 Dry etching method

Publications (2)

Publication Number Publication Date
JPS55138834A true JPS55138834A (en) 1980-10-30
JPS5713137B2 JPS5713137B2 (en) 1982-03-15

Family

ID=12715976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4531979A Granted JPS55138834A (en) 1979-04-16 1979-04-16 Dry etching method

Country Status (1)

Country Link
JP (1) JPS55138834A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157091A (en) * 1987-10-07 1992-10-20 Murahara Masataka Ultraviolet-absorbing polymer material and photoetching process
JPH1187324A (en) * 1997-09-04 1999-03-30 Hitachi Ltd Plasma processing method
WO2018225661A1 (en) * 2017-06-08 2018-12-13 昭和電工株式会社 Etching method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157091A (en) * 1987-10-07 1992-10-20 Murahara Masataka Ultraviolet-absorbing polymer material and photoetching process
JPH1187324A (en) * 1997-09-04 1999-03-30 Hitachi Ltd Plasma processing method
WO2018225661A1 (en) * 2017-06-08 2018-12-13 昭和電工株式会社 Etching method
JPWO2018225661A1 (en) * 2017-06-08 2020-04-09 昭和電工株式会社 Etching method
US11164751B2 (en) 2017-06-08 2021-11-02 Showa Denko K.K. Etching method

Also Published As

Publication number Publication date
JPS5713137B2 (en) 1982-03-15

Similar Documents

Publication Publication Date Title
JPS57155732A (en) Dry etching
JPS55138834A (en) Dry etching method
JPS5440079A (en) Plasma etching method
JPS5329672A (en) Gas etching apparatus
JPS5688320A (en) Gas etching method
JPS5321574A (en) Contact and separation method of photo mask
JPS5287985A (en) Plasma etching method
JPS53112671A (en) Forming method for pattern
JPS52127770A (en) Spatter etching method
JPS5315765A (en) Vacuum caontact prevention method of hard mask
JPS5382268A (en) Production of mask
JPS5497373A (en) Removal method of resist
JPS5637647A (en) Manufacturing of semiconductor device
JPS53105982A (en) Micropattern formation method
JPS6436023A (en) Dry etching
JPS5321573A (en) Etching method
JPS5397373A (en) Etching method
JPS51130173A (en) Silicon etching method by gas plasma
JPS5397775A (en) Etching method
JPS5315766A (en) Selective etching method of platinum layer
JPS5345991A (en) Manufacture of semiconductor
JPS5325512A (en) Isomerization of organic compounds containing fluorine
JPS51148366A (en) Pattern formation method
JPS5397374A (en) Mask producing method
JPS5210680A (en) Method of manufacturing photo-mask for photo etching