JPS5637647A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5637647A
JPS5637647A JP11331279A JP11331279A JPS5637647A JP S5637647 A JPS5637647 A JP S5637647A JP 11331279 A JP11331279 A JP 11331279A JP 11331279 A JP11331279 A JP 11331279A JP S5637647 A JPS5637647 A JP S5637647A
Authority
JP
Japan
Prior art keywords
al2o3
wirings
mask
anode oxidation
nonporous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11331279A
Other languages
Japanese (ja)
Inventor
Masato Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP11331279A priority Critical patent/JPS5637647A/en
Publication of JPS5637647A publication Critical patent/JPS5637647A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain the Al wirings with high stability and reproducibility by a method wherein an Al film is applied on an insulative film including openings and laid upon a substrate, nonporous Al2O3 is formed by anode oxidation with a mask made of Si or Si compound, and then porous Al2O3 is farmed after removing the mask. CONSTITUTION:An insulative film 2 including a window 3, Al 4 and Si 8 are laid upon a substrate 1 by turns and the Si 8 is etched under a regist mask 7 by using plasma. Nonporous Al2O3 6 is formed by anode oxidation. Then, after removing the regist 7 and the Si 8 totally, the remaining Al 4 is converted into porous Al2O3 5 by anode oxidation again, so that wirings are obtained. This method makes it possible to ease working conditions and controls, prevent the generation of failures and thus form the wirings with high stability and reproducibility.
JP11331279A 1979-09-04 1979-09-04 Manufacturing of semiconductor device Pending JPS5637647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11331279A JPS5637647A (en) 1979-09-04 1979-09-04 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11331279A JPS5637647A (en) 1979-09-04 1979-09-04 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5637647A true JPS5637647A (en) 1981-04-11

Family

ID=14609034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11331279A Pending JPS5637647A (en) 1979-09-04 1979-09-04 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637647A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766093A (en) * 1984-07-30 1988-08-23 International Business Machines Corp. Chemically formed self-aligned structure and wave guide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766093A (en) * 1984-07-30 1988-08-23 International Business Machines Corp. Chemically formed self-aligned structure and wave guide

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