JPS56137623A - Forming of cross pattern electrode - Google Patents

Forming of cross pattern electrode

Info

Publication number
JPS56137623A
JPS56137623A JP4089380A JP4089380A JPS56137623A JP S56137623 A JPS56137623 A JP S56137623A JP 4089380 A JP4089380 A JP 4089380A JP 4089380 A JP4089380 A JP 4089380A JP S56137623 A JPS56137623 A JP S56137623A
Authority
JP
Japan
Prior art keywords
pattern
resist
mask
conductor layer
pattern electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4089380A
Other languages
Japanese (ja)
Other versions
JPS6328338B2 (en
Inventor
Masaki Ito
Sotaro Edokoro
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4089380A priority Critical patent/JPS56137623A/en
Publication of JPS56137623A publication Critical patent/JPS56137623A/en
Publication of JPS6328338B2 publication Critical patent/JPS6328338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a cross pattern electrode having satisfactory linear width precision by overlapping the second pattern as a mask on the first pattern of line and space, etching out a conductor layer, providing the third pattern mask to etch a conductor layer. CONSTITUTION:The first pattern of resist 11 is provided on a conductor layer 12 at a fixed interval, and is topped with a resist mask 15 of the second pattern. Following this process, the resist 11 of a window part 14 is removed to make an total surface conductor layer exposed. Then a mask 17 of the third pattern is provided to remove a resist 20 of a window part 18. Thus a prearranged cross pattern electrode can be obtained.
JP4089380A 1980-03-28 1980-03-28 Forming of cross pattern electrode Granted JPS56137623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4089380A JPS56137623A (en) 1980-03-28 1980-03-28 Forming of cross pattern electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089380A JPS56137623A (en) 1980-03-28 1980-03-28 Forming of cross pattern electrode

Publications (2)

Publication Number Publication Date
JPS56137623A true JPS56137623A (en) 1981-10-27
JPS6328338B2 JPS6328338B2 (en) 1988-06-08

Family

ID=12593183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4089380A Granted JPS56137623A (en) 1980-03-28 1980-03-28 Forming of cross pattern electrode

Country Status (1)

Country Link
JP (1) JPS56137623A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175830A (en) * 1982-04-08 1983-10-15 Matsushita Electric Ind Co Ltd Forming method for pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175830A (en) * 1982-04-08 1983-10-15 Matsushita Electric Ind Co Ltd Forming method for pattern
JPH0219970B2 (en) * 1982-04-08 1990-05-07 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS6328338B2 (en) 1988-06-08

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